公开(公告)号：US20180239085A1

公开(公告)日：2018-08-23

申请号：US15962633

申请日：2018-04-25

Applicant: STMicroelectronics, Inc.

Inventor： Qing Liu

IPC: G02B6/10 ,  G02B6/122 ,  G02B6/13 ,  C30B25/04 ,  C30B29/06 ,  C30B23/04 ,  G02B6/136 ,  G02B6/032 ,  G02B6/12

CPC classification number: G02B6/107 ,  C30B23/04 ,  C30B25/04 ,  C30B29/06 ,  G02B6/032 ,  G02B6/122 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12173 ,  G02B2006/12176

Abstract: A strip of sacrificial semiconductor material is formed on top of a non-sacrificial semiconductor material substrate layer. A conformal layer of the non-sacrificial semiconductor material is epitaxially grown to cover the substrate layer and the strip of sacrificial semiconductor material. An etch is performed to selectively remove the strip of sacrificial semiconductor material and leave a hollow channel surrounded by the conformal layer and the substrate layer. Using an anneal, the conformal layer and the substrate layer are reflowed to produce an optical waveguide structure including the hollow channel.

公开(公告)号：US10043805B2

公开(公告)日：2018-08-07

申请号：US15197509

申请日：2016-06-29

Applicant: STMICROELECTRONICS, INC.

Inventor： Pierre Morin ,  Nicolas Loubet

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L29/10 ,  H01L29/165

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.

公开(公告)号：US10032912B2

公开(公告)日：2018-07-24

申请号：US14588221

申请日：2014-12-31

Applicant: STMICROELECTRONICS, INC. ,  GLOBALFOUNDRIES INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Pierre Morin ,  Kangguo Cheng ,  Jody Fronheiser ,  Xiuyu Cai ,  Juntao Li ,  Shogo Mochizuki ,  Ruilong Xie ,  Hong He ,  Nicolas Loubet

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092

Abstract: A modified silicon substrate having a substantially defect-free strain relaxed buffer layer of SiGe is suitable for use as a foundation on which to construct a high performance CMOS FinFET device. The substantially defect-free SiGe strain-relaxed buffer layer can be formed by making cuts in, or segmenting, a strained epitaxial film, causing edges of the film segments to experience an elastic strain relaxation. When the segments are small enough, the overall film is relaxed so that the film is substantially without dislocation defects. Once the substantially defect-free strain-relaxed buffer layer is formed, strained channel layers can be grown epitaxially from the relaxed SRB layer. The strained channel layers are then patterned to create fins for a FinFET device. In one embodiment, dual strained channel layers are formed—a tensilely strained layer for NFET devices, and a compressively strained layer for PFET devices.

公开(公告)号：US10032794B2

公开(公告)日：2018-07-24

申请号：US15795283

申请日：2017-10-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  STMICROELECTRONICS, INC.

Inventor： Wai-Kin Li ,  Chieh-Yu Lin ,  Yannick Daurelle

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/441 ,  H01L29/40 ,  H01L23/528 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/08 ,  H01L27/02 ,  H01L27/088 ,  H01L29/06 ,  H01L21/768

Abstract: A semiconductor device includes a plurality of gates formed upon a semiconductor substrate that includes a plurality of outer active areas (e.g. CMOS/PMOS areas, source/drain regions, etc.) and one or more inner active areas. An isolator is formed upon one or more inner gates associated with the one or more inner active areas. A contact bar electrically connects the outer active areas and/or outer gates and is formed upon the isolator. The isolator electrically insulates the contact bar from the one or more inner active areas and/or the one or more inner gates.

公开(公告)号：US20180197809A1

公开(公告)日：2018-07-12

申请号：US15912193

申请日：2018-03-05

Applicant: STMicroelectronics, Inc.

Inventor： Jefferson Talledo ,  Rammil Seguido

IPC: H01L23/495 ,  H01L23/00 ,  H01L21/56 ,  H01L23/498 ,  H01L23/31

CPC classification number: H01L23/49531 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49568 ,  H01L23/49575 ,  H01L23/49861 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4918 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor device may include a circuit board having an opening, and a frame. The frame may have an IC die pad in the opening, and arms extending outwardly from the IC die pad and coupled to the circuit board. The semiconductor device may include an IC mounted on the IC die pad, bond wires coupling the circuit board with the IC, and encapsulation material surrounding the IC, the bond wires, and the arms.

公开(公告)号：US20180194131A1

公开(公告)日：2018-07-12

申请号：US15917231

申请日：2018-03-09

Applicant: STMICROELECTRONICS, INC. ,  STMICROELECTRONICS (MALTA) LTD

Inventor： Simon DODD ,  Ivan ELLUL ,  Christopher BRINCAT

IPC: B41J2/01 ,  B41J2/14 ,  B41J2/045

CPC classification number: B41J2/01 ,  B41J2/04548 ,  B41J2/14072 ,  B41J2/14201 ,  B41J2/1433 ,  B41J2002/14362 ,  B41J2002/14491

Abstract: One or more embodiments are directed to a microfluidic assembly that includes an interconnect substrate coupled to a microfluidic die. In one embodiment, the microfluidic die includes a ledge with a plurality of bond pads. The microfluidic assembly further includes an interconnect substrate having an end resting on the ledge proximate the bond pads. In another embodiment, the interconnect substrate abuts a side surface of the ledge or is located proximate the ledge. Conductive elements couple the microfluidic die to contacts of the interconnect substrate. Encapsulant is located over the conductive elements, the bond pads, the contacts.

公开(公告)号：US20180190576A1

公开(公告)日：2018-07-05

申请号：US15399234

申请日：2017-01-05

Applicant: STMicroelectronics, Inc.

Inventor： Rennier Rodriguez ,  Aiza Marie Agudon ,  Jefferson Talledo ,  Moonlord Manalo ,  Ela Mia Cadag ,  Rammil Seguido

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L23/49503 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/49513 ,  H01L23/49548 ,  H01L2224/27013 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83385 ,  H01L2224/92247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: The present disclosure is directed to a leadframe having a recess in a body of the leadframe to collect glue overflowing from the manufacturing process of coupling a semiconductor die to the leadframe. The recess extends beneath an edge of the semiconductor die so that any tendency of the glue to adhere to the semiconductor die is counteracted by a tendency of the glue to adhere to a wall of the recess and at least partially fill the volume of the recess. In addition, the recess for collecting adhesive may also form a mold lock on an edge of the leadframe, the mold lock providing a more durable connection between the leadframe and an encapsulant during physical and temperature stresses.

公开(公告)号：US10008472B2

公开(公告)日：2018-06-26

申请号：US14753365

申请日：2015-06-29

Applicant: STMICROELECTRONICS, INC.

Inventor： Jefferson Talledo

IPC: H01L23/48 ,  H01L23/52 ,  H01L21/00 ,  H01L23/00 ,  H01L21/56 ,  H01L21/78 ,  H01L21/48 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L24/85 ,  H01L21/4842 ,  H01L21/561 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/49503 ,  H01L23/49544 ,  H01L23/49582 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00015

Abstract: A method is for making a semiconductor device. The method may include providing a lead frame having a recess, forming a sacrificial material in the recess of the lead frame, and mounting an IC on the lead frame. The method may include encapsulating the IC and the lead frame, removing portions of the lead frame to define lead frame contacts for the IC, and removing the sacrificial material to define for each lead frame contact a solder anchoring tab extending outwardly at a lower region and defining a sidewall recess between opposing portions of the solder anchoring tab and the encapsulation material.

公开(公告)号：US20180175202A1

公开(公告)日：2018-06-21

申请号：US15890880

申请日：2018-02-07

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc. ,  STMicroelectronics, Inc.

Inventor： Xiuyu Cai ,  Qing Liu ,  Kejia Wang ,  Ruilong Xie ,  Chun-Chen Yeh

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/417 ,  H01L21/306 ,  H01L29/66

CPC classification number: H01L29/1033 ,  H01L21/30621 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/41791 ,  H01L29/66522 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A semiconductor device includes a fin patterned in a substrate; a gate disposed over and substantially perpendicular to the fin; a pair of epitaxial contacts including a III-V material over the fin and on opposing sides of the gate; and a channel region between the pair of epitaxial contacts under the gate including an undoped III-V material between doped III-V materials, the doped III-V materials including a dopant in an amount in a range from about 1e18 to about 1e20 atoms/cm3 and contacting the epitaxial contacts.

公开(公告)号：US20180158945A1

公开(公告)日：2018-06-07

申请号：US15884843

申请日：2018-01-31

Applicant: STMICROELECTRONICS, INC.

Inventor： Pierre MORIN ,  Nicolas LOUBET

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L27/088 ,  H01L29/417 ,  H01L29/161 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L27/0886 ,  H01L29/0623 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/41791 ,  H01L29/495 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7849 ,  H01L2029/7858

Abstract: A self-aligned SiGe FinFET device features a relaxed channel region having a high germanium concentration. Instead of first introducing germanium into the channel and then attempting to relax the resulting strained film, a relaxed channel is formed initially to accept the germanium. In this way, a presence of germanium can be established without straining or damaging the lattice. Gate structures are patterned relative to intrinsic silicon fins, to ensure that the gates are properly aligned, prior to introducing germanium into the fin lattice structure. After aligning the gate structures, the silicon fins are segmented to elastically relax the silicon lattice. Then, germanium is introduced into the relaxed silicon lattice, to produce a SiGe channel that is substantially stress-free and also defect-free. Using the method described, concentration of germanium achieved in a structurally stable film can be increased to a level greater than 85%.