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公开(公告)号：US09806265B1
公开(公告)日：2017-10-31
申请号：US15092894
申请日：2016-04-07
Applicant: International Business Machines Corporation
Inventor： Martin M. Frank , Shu-Jen Han , George S. Tulevski
CPC classification number: H01L51/0049 , H01L51/0048 , H01L51/0575 , H01L51/102 , H01L2251/301 , H01L2251/303
Abstract: A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer.
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公开(公告)号：US20170310277A1
公开(公告)日：2017-10-26
申请号：US15133281
申请日：2016-04-20
Applicant: International Business Machines Corporation
Inventor： Shu-Jen Han , Keith A. Jenkins
CPC classification number: H03B5/1278 , H03B5/1212 , H03B5/1243 , H03B5/1268 , H03K3/03
Abstract: A voltage controlled oscillator (VCO) and a method of operating the VCO are disclosed. The VCO includes an inductor device, a capacitor device coupled in parallel with the inductor device through first and second nodes, and a pair of cross-coupled transistors coupled in parallel with the inductor device and the capacitor device through the first and second nodes. At least one of the pair of cross-coupled transistor includes a plurality of sub transistors coupled in parallel. The sub transistors are individually switchable to adjust current drive capability of each of the sub transistors. Each of the sub transistors includes a first gate and a second gate.
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公开(公告)号：US20170279052A1
公开(公告)日：2017-09-28
申请号：US15077025
申请日：2016-03-22
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Abram L. Falk , Damon B. Farmer , Shu-Jen Han
CPC classification number: H01L51/0048 , C01B32/168 , C01B32/17 , C01B32/176 , C01B2202/08 , C01B2202/22 , H01L27/305 , H01L51/0003 , H01L51/0021 , H01L51/0025 , H01L51/441 , H01L2251/301
Abstract: Detectors and methods of forming the same include aligning a semiconducting carbon nanotubes on a substrate in parallel to form a nanotube layer. The aligned semiconducting carbon nanotubes in the nanotube layer are cut to a uniform length corresponding to a detection frequency. Metal contacts are formed at opposite ends of the nanotube layer.
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公开(公告)号：US20170133610A1
公开(公告)日：2017-05-11
申请号：US14951847
申请日：2015-11-25
Applicant: International Business Machines Corporation
Inventor： Qing Cao , Shu-Jen Han , Jianshi Tang
CPC classification number: H01L51/105 , H01L51/0021 , H01L51/0026 , H01L51/0048 , H01L51/0558 , H01L2251/301
Abstract: A method of forming an end-bonded contact on a semiconductor is disclosed herein. The method can include forming a dielectric layer on a substrate and depositing a carbon nanotube layer onto the dielectric layer. Additionally, the method can include depositing a resist mask onto the carbon nanotube layer and patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed. In some aspects, the method can include depositing a contact metal such that the contact metal contacts the exposed carbon nanotube layer and thermally annealing the device such that the carbon nanotube layer dissolves into the contact metal such that a single contact surface is formed between the contact and the carbon nanotube layer.
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公开(公告)号：US20170125711A1
公开(公告)日：2017-05-04
申请号：US15383670
申请日：2016-12-19
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Shu-Jen Han , Jianshi Tang
CPC classification number: H01L51/105 , H01L51/002 , H01L51/0021 , H01L51/0023 , H01L51/0048 , H01L51/0545 , H01L51/0558 , H01L51/107 , H01L2251/301
Abstract: A field effect transistor includes a substrate and a gate dielectric formed on the substrate. A channel material is formed on the dielectric layer. The channel material includes carbon nanotubes. A patterned resist layer has openings formed therein. Metal contacts are formed on the channel material in the openings in the patterned resist layer and over portions of the patterned resist layer to protect sidewalls of the metal contacts to prevent degradation of the metal contacts.
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Patent Agency Ranking
公开(公告)号：US09614107B2
公开(公告)日：2017-04-04
申请号：US14720370
申请日：2015-05-22
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Zhihong Chen , Shu-Jen Han , Siyuranga O. Koswatta , Alberto Valdes Garcia
CPC classification number: H01L29/93 , B82Y10/00 , B82Y40/00 , H01L28/40 , H01L29/1606
Abstract: A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.
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公开(公告)号：US20160322529A1
公开(公告)日：2016-11-03
申请号：US14744171
申请日：2015-06-19
Applicant: International Business Machines Corporation
Inventor： Qing Cao , Shu-Jen Han , Li-Wen Hung
IPC: H01L31/075 , H01L31/18 , B81C1/00 , H01L31/05
CPC classification number: H01L31/075 , B81C1/0015 , G06K7/10366 , G06K19/07372 , H01L23/544 , H01L23/576 , H01L31/02005 , H01L31/02019 , H01L31/0203 , H01L31/0288 , H01L31/05 , H01L31/105 , H01L31/1804 , H01L2223/5444 , H01L2223/54486 , H01L2924/14
Abstract: Embodiments relate to the detection of semiconductor tampering with a light-sensitive circuit. A tamper detection device for an integrated circuit includes a light-sensitive circuit disposed within a package of an integrated circuit. The light-sensitive circuit closes in response to an exposure to a light source, indicating a tamper condition.
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公开(公告)号：US20160313276A1
公开(公告)日：2016-10-27
申请号：US14744574
申请日：2015-06-19
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Shu-Jen Han , Keith A. Jenkins
IPC: G01N27/414
CPC classification number: G01N27/4141 , G01N27/4146 , G01N33/0075
Abstract: A method of assembling a remote sensor system to detect a gas or chemical and a remote sensor system are described. The method includes fabricating a sensor, the sensor outputting a sensor signal that changes upon contact of the sensor with the gas or chemical and the sensor having an input port for a clock signal, coupling a capacitor to the sensor, the capacitor output voltage resulting from the sensor signal output by the sensor, and coupling a mixer to the capacitor and a low frequency oscillator, the mixer configured to mix the capacitor output voltage with the low frequency oscillator output to generate an output signal. The method also includes coupling an antenna to the mixer, the antenna configured to transmit the output signal indicating detection of the gas or chemical.
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公开(公告)号：US20160191255A1
公开(公告)日：2016-06-30
申请号：US14586103
申请日：2014-12-30
Applicant: International Business Machines Corporation
Inventor： Wilfried Haensch , Shu-Jen Han , Keith A. Jenkins , Dirk Pfeiffer
CPC classification number: H04L9/0861 , G09C1/00 , H04L9/0866 , H04L2209/12
Abstract: Techniques for use of carbon nanotubes as an anti-tampering feature and for use of randomly metallic or semiconducting carbon nanotubes in the generation of a physically unclonable cryptographic key generation are provided. In one aspect, a cryptographic key having an anti-tampering feature is provided which includes: an array of memory bits oriented along at least one bit line and at least one word line, wherein each of the memory bits comprises a memory cell, wherein the cryptographic key is stored in the memory cell, and wherein the memory cell is connected to the at least one bit line; and a metallic carbon nanotube interconnect which connects the memory cell to the at least one word line. A cryptographic key and method for processing the cryptographic key are also provided.
Abstract translation: 提供了使用碳纳米管作为防篡改特征的技术，并且在生成物理上不可克隆的密码密钥生成时使用随机金属或半导体碳纳米管。 一方面，提供了具有防篡改特征的密码密钥，其包括：沿至少一个位线和至少一个字线定向的存储器位阵列，其中每个存储器位包括存储器单元，其中， 加密密钥存储在存储器单元中，并且其中存储单元连接到至少一个位线; 以及将存储单元连接到至少一个字线的金属碳纳米管互连。 还提供了用于处理加密密钥的加密密钥和方法。
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公开(公告)号：US20150325672A1
公开(公告)日：2015-11-12
申请号：US14661273
申请日：2015-03-18
Applicant: International Business Machines Corporation
Inventor： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han
IPC: H01L29/66 , H01L29/16 , H01L29/423 , H01L29/51 , H01L21/02 , H01L21/04 , H01L29/786 , H01L29/49
CPC classification number: H01L29/66045 , H01L21/02178 , H01L21/02181 , H01L21/02527 , H01L21/044 , H01L29/1606 , H01L29/42376 , H01L29/42384 , H01L29/4908 , H01L29/4916 , H01L29/517 , H01L29/66015 , H01L29/66742 , H01L29/78645 , H01L29/78648 , H01L29/78684
Abstract: An electronic device comprises an insulator, a local first gate embedded in the insulator with a top surface of the first gate being substantially coplanar with a surface of the insulator, a first dielectric layer formed over the first gate and insulator, and a channel. The channel comprises a bilayer graphene layer formed on the first dielectric layer. The first dielectric layer provides a substantially flat surface on which the channel is formed. A second dielectric layer formed over the bilayer graphene layer and a local second gate formed over the second dielectric layer. Each of the local first and second gates is capacitively coupled to the channel of the bilayer graphene layer. The local first and second gates form a first pair of gates to locally control a first portion of the bilayer graphene layer.
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