公开(公告)号：US20070133211A1

公开(公告)日：2007-06-14

申请号：US11673476

申请日：2007-02-09

申请人： Kenji Yoneda ,  Takahiro Amano ,  Yasuhiko Inagaki

发明人： Kenji Yoneda ,  Takahiro Amano ,  Yasuhiko Inagaki

IPC分类号： F21S8/10

CPC分类号： H01L33/58 ,  F21V5/04 ,  F21V7/0091 ,  F21Y2115/10 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A light emitting diode unit comprises a light emitting element D1, a base 1 having a heat dissipating member 12 that dissipates heat generated by the light emitting element D1, and a first lens 2 comprising a reflecting element 214 that reflects light R2 traveling outside of a predetermined angle among the emitted light R emitted by the light emitting element D1 and a refracting element F that refracts light R1 traveling inside of the predetermined angle among the emitted light R each of which is formed integrally, with the first lens 2 mounted integrally on the base 1, and the emitted light R emitted from the light emitting element D1 is made to travel generally toward the same direction by the reflecting element 214 and the refracting element F.

摘要翻译： 发光二极管单元包括发光元件D 1，具有散发由发光元件D 1产生的热的散热构件12的基座1和包括反射光R 2行进的反射元件214的第一透镜2 在由发光元件D 1发射的发射光R中的预定角度之外以及折射元件F，折射元件F折射在与其一体形成的发射光R中的预定角度内行进的光R 1与第一透镜 2一体地安装在基座1上，并且从发光元件D 1发射的发射光R通过反射元件214和折射元件F大致朝向相同的方向移动。

公开(公告)号：US07213945B2

公开(公告)日：2007-05-08

申请号：US10514221

申请日：2003-05-16

申请人： Kenji Yoneda ,  Takahiro Amano ,  Yasuhiko Inagaki

发明人： Kenji Yoneda ,  Takahiro Amano ,  Yasuhiko Inagaki

IPC分类号： F21V7/00

CPC分类号： H01L33/58 ,  F21V5/04 ,  F21V7/0091 ,  F21Y2115/10 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A light emitting diode unit comprises a light emitting element D1, a base 1 having a heat dissipating member 12 that dissipates heat generated by the light emitting element D1, and a first lens 2 comprising a reflecting element 214 that reflects light R2 traveling outside of a predetermined angle among the emitted light R emitted by the light emitting element D1 and a refracting element F that refracts light R1 traveling inside of the predetermined angle among the emitted light R, each of which is formed integrally, with the first lens 2 mounted integrally on the base 1, and the emitted light R emitted from the light emitting element D1 is made to travel generally toward the same direction by the reflecting element 214 and the refracting element F.

摘要翻译： 发光二极管单元包括发光元件D 1，具有散发由发光元件D 1产生的热的散热构件12的基座1和包括反射光R 2行进的反射元件214的第一透镜2 在由发光元件D 1发射的发射光R中的预定角度以外的预定角度以及折射元件F，折射元件F折射在与第一 透镜2一体地安装在基座1上，并且从发光元件D 1发射的发射光R通过反射元件214和折射元件F大致朝向相同的方向移动。

公开(公告)号：US20060264068A1

公开(公告)日：2006-11-23

申请号：US11494621

申请日：2006-07-28

申请人： Kenji Yoneda

发明人： Kenji Yoneda

IPC分类号： H01L21/00

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L21/3225 ,  H01L29/518

摘要： A first thermal treatment, which is performed at a temperature within 650-750° C. for 30-240 minutes, and thereafter a second thermal treatment, which is performed at a temperature within 900-1100° C. for 30-120 minutes, are performed as the initial thermal treatments on a semiconductor wafer composed of silicon. Further, before forming a gate insulating film, the temperature is increased to 1000° C. at a temperature increasing rate of 8° C./min in a nitrogen ambient, and a thermal treatment is performed at a temperature of 1000° C. for 30 minutes as a third thermal treatment.

摘要翻译： 第一热处理在650-750℃的温度下进行30-240分钟，然后在900-1100℃的温度下进行30-120分钟的第二次热处理， 作为由硅构成的半导体晶片上的初始热处理进行。 此外，在形成栅极绝缘膜之前，在氮气氛中以8℃/分钟的升温速度将温度升高至1000℃，在1000℃的温度下进行热处理， 30分钟作为第三次热处理。

公开(公告)号：US20060261422A1

公开(公告)日：2006-11-23

申请号：US11485914

申请日：2006-07-13

申请人： Hiroki Sakamoto ,  Yasuhiro Kawasaki ,  Kenji Yoneda

发明人： Hiroki Sakamoto ,  Yasuhiro Kawasaki ,  Kenji Yoneda

IPC分类号： H01L29/94

CPC分类号： H01L29/518 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/3185 ,  H01L29/4966

摘要： A semiconductor device includes a gate insulating film formed on a silicon substrate, a gate electrode formed on the gate insulating film, and an electrical insulating film formed on the gate electrode. The electrical insulating film includes a N—H bond and substantially no Si—H bond. The electrical insulating film is formed by using tetrachlorosilane (SiCl4) that contains no hydrogen (H) as a source gas for a silicon nitride film. Thus, the semiconductor device can suppress residual hydrogen in the gate insulating film and prevent interface defects of the gate insulating film, a shift in the threshold voltage of a transistor, and the degradation of an on-state current. A method for manufacturing the semiconductor device also is provided.

摘要翻译： 半导体器件包括形成在硅衬底上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和形成在栅电极上的电绝缘膜。 电绝缘膜包括N-H键并且基本上不含Si-H键。 通过使用不含氢（H）的四氯硅烷作为氮化硅膜的源气体来形成电绝缘膜。 因此，半导体器件可以抑制栅极绝缘膜中的残留氢，并防止栅极绝缘膜的界面缺陷，晶体管的阈值电压的偏移和导通状态电流的劣化。 还提供了一种用于制造半导体器件的方法。

公开(公告)号：US07052162B2

公开(公告)日：2006-05-30

申请号：US10616626

申请日：2003-07-10

申请人： Kenji Yoneda

发明人： Kenji Yoneda

IPC分类号： F21V17/00

CPC分类号： G02B6/262 ,  G01N21/8806 ,  G02B6/32 ,  G02B6/403

摘要： An improved illuminating unit for illuminating a target portion of an object to be illuminated is provided, including: a fiber holding portion having a fiber insert hole holding a light-emitting end portion of an optical fiber; and a lens holding portion located downstream of the fiber holding portion in a light traveling direction, light emitted from a light-emitting end of the optical fiber being directed to the target portion through a lens held by the lens holding portion, wherein: the fiber insert hole comprises an equal-diameter portion having a diameter substantially equal to a diameter of the optical fiber, and a larger-diameter portion having a larger diameter than the equal-diameter portion and opening at one end face of the fiber holding portion, the fiber insert hole holding the optical fiber extending through the equal-diameter portion; and the lens is abutted against the one end face of the fiber holding portion or a forward end face of a fusion-deformed portion of the optical fiber, the fusion-deformed portion being fitted in the larger-diameter portion and resulting from fusion deformation of a leading end portion of the optical fiber projecting from the equal-diameter portion.

摘要翻译： 提供了一种用于照明待照明物体的目标部分的改进的照明单元，包括：光纤保持部分，其具有保持光纤的发光端部的光纤插入孔; 以及透镜保持部，其在光行进方向上位于所述光纤保持部的下游侧，从所述光纤的发光端射出的光通过由所述透镜保持部保持的透镜朝向所述目标部，所述光纤 插入孔包括具有与光纤的直径基本相等的直径的等直径部分，以及具有比等径部分的直径大的直径部分和在纤维保持部分的一个端面处的开口的大直径部分， 保持光纤延伸穿过相等直径部分的光纤插入孔; 并且所述透镜抵靠在所述光纤保持部的一个端面或所述光纤的熔融变形部的前端面，所述熔融变形部被嵌合在所述较大直径部，并且由于熔融变形 光纤的前端部从等直径部分突出。

公开(公告)号：US20060050499A1

公开(公告)日：2006-03-09

申请号：US10534613

申请日：2003-11-14

申请人： Kenji Yoneda ,  Shigehide Hirooka

发明人： Kenji Yoneda ,  Shigehide Hirooka

IPC分类号： G03B15/02

CPC分类号： G01N21/8903 ,  G01N2021/8896

摘要： A light intensity adjustment system is provided which greatly decreases or makes unnecessary image compensation by the image processing device side, improves scan precision, and can reduce the scan time; and which comprises: a light irradiation device 1 that has multiple independently light intensity adjustable light irradiation units 11, and that irradiates light facing a predetermined target area A; a photographic device 2 that photographs said target area A through a lens, and outputs a target area image that is the photographed image; and a light intensity control unit 3 that controls the respective light intensities of said light irradiation units 11 so that the brightness of the various parts of the target area images that said photographic device 2 has output approaches a predetermined standard value.

摘要翻译： 提供了通过图像处理装置侧大大减少或不必要的图像补偿的亮度调节系统，提高了扫描精度，并且可以减少扫描时间; 并且包括：具有多个独立的光强度可调光照射单元11的光照射装置1，并且照射面向预定目标区域A的光; 照相装置2，通过透镜拍摄所述目标区域A，并输出作为拍摄图像的目标区域图像; 以及光强度控制单元3，其控制所述光照射单元11的各个光强度，使得所述摄影设备2已经输出的目标区域图像的各个部分的亮度接近预定的标准值。

公开(公告)号：US20050275007A1

公开(公告)日：2005-12-15

申请号：US11138497

申请日：2005-05-27

申请人： Yasuhiro Kawasaki ,  Kenji Yoneda

发明人： Yasuhiro Kawasaki ,  Kenji Yoneda

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L21/336 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L28/91 ,  H01L27/10852 ,  H01L28/84

摘要： The capacitor of the present invention comprises: an opening part formed in an interlayer insulating film on a semiconductor substrate; a lower electrode made of a polycrystalline silicon with an uneven surface part; a chemical oxide film formed on the uneven surface part of the lower electrode; an silicon oxynitride film which is obtained by modifying the chemical oxide film by nitriding processing; a capacitive insulating film made of a metal oxide film formed on the silicon oxynitride film; and an upper electrode formed on the capacitive insulating film.

摘要翻译： 本发明的电容器包括：形成在半导体衬底上的层间绝缘膜中的开口部; 由具有不平坦表面部分的多晶硅制成的下电极; 形成在下电极的不平坦表面部分上的化学氧化物膜; 通过氮化处理改性化学氧化膜获得的氮氧化硅膜; 由在氧氮化硅膜上形成的金属氧化物膜构成的电容绝缘膜; 以及形成在电容绝缘膜上的上电极。

公开(公告)号：US20050124113A1

公开(公告)日：2005-06-09

申请号：US10985883

申请日：2004-11-12

申请人： Kenji Yoneda

发明人： Kenji Yoneda

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/321 ,  H01L21/44 ,  H01L21/82 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L28/60 ,  H01L21/3144 ,  H01L21/32105 ,  H01L27/1085 ,  H01L28/84

摘要： In a method for fabricating a semiconductor device, a first electrode made of polycrystalline silicon is subjected to first plasma containing oxygen, thereby forming a silicon oxide film in the surface of the first electrode. Then, the first electrode in which the silicon oxide film has been formed is subjected to second plasma containing nitrogen, thereby changing the silicon oxide film into a silicon oxynitride film. Subsequently, a capacitive insulating film made of a metal oxide is formed on the first electrode in which the silicon oxynitride film has been formed. Thereafter, the capacitive insulating film is subjected to third plasma containing oxygen, thereby supplying oxygen to the capacitive insulating film. Thereafter, thermal processing is performed in an oxidizing atmosphere on the capacitive insulating film to which oxygen has been supplied, and then a second electrode is formed on the capacitive insulating film.

摘要翻译： 在制造半导体器件的方法中，由多晶硅制成的第一电极经受含有氧的第一等离子体，从而在第一电极的表面形成氧化硅膜。 然后，对其中形成有氧化硅膜的第一电极进行包含氮的第二等离子体，从而将氧化硅膜改变为氮氧化硅膜。 随后，在形成有氧氮化硅膜的第一电极上形成由金属氧化物构成的电容绝缘膜。 此后，电容绝缘膜经受含有氧的第三等离子体，从而向电容绝缘膜提供氧。 此后，在已经供给氧的电容绝缘膜上的氧化气氛中进行热处理，然后在电容绝缘膜上形成第二电极。

公开(公告)号：US20050121705A1

公开(公告)日：2005-06-09

申请号：US10989385

申请日：2004-11-17

申请人： Yasuhiro Kawasaki ,  Kenji Yoneda

发明人： Yasuhiro Kawasaki ,  Kenji Yoneda

IPC分类号： H01L21/677 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/318 ,  H01L21/336 ,  H01L21/44 ,  H01L21/68 ,  H01L21/8234 ,  H01L29/76 ,  H01L31/062

CPC分类号： H01L21/0209 ,  H01L29/66575

摘要： A method for fabricating a semiconductor device, wherein a BTBAS—SiN film and an oxide film formed on a reverse-surface side of a semiconductor substrate at the same time as the formation of a BTBAS—SiN film for a side wall or a liner and an oxide film for an offset spacer are completely removed to thereby expose the reverse surface of the semiconductor substrate, and the semiconductor substrate is handled in a process or transfer of the semiconductor substrate by means of an electrostatic chuck or a vacuum chuck as a wafer handler after the reverse surface of the semiconductor substrate is exposed.

摘要翻译： 一种制造半导体器件的方法，其中在形成用于侧壁或衬垫的BTBAS-SiN膜的同时，形成在半导体衬底的反面侧的BTBAS-SiN膜和氧化物膜，以及 完全去除用于偏移间隔物的氧化膜，从而暴露半导体衬底的反面，并且半导体衬底在半导体衬底的处理或转移中通过作为晶片处理器的静电吸盘或真空吸盘处理 在半导体衬底的反面被暴露之后。

公开(公告)号：US20050014386A1

公开(公告)日：2005-01-20

申请号：US10833037

申请日：2004-04-28

申请人： Kenji Yoneda

发明人： Kenji Yoneda

IPC分类号： H01L21/683 ,  G03B27/42 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H01L21/304 ,  H01L21/31 ,  H01L21/469 ,  H01L21/68 ,  H01L21/687

CPC分类号： H01L21/6875 ,  H01L21/68757

摘要： A wafer is held on a pin chuck, and thereafter a design pattern is transferred to the principal surface of the wafer by exposing an exposure light, which passes through a mask having the design pattern, onto the principal surface of the held wafer. The underlying surface of the wafer has irregularities with cross-sectional cycle lengths of 300 μm or more and depressions with opening diameters of 100 μm or less, and is formed such that an arithmetic mean of depths of the irregularities and depths of the depressions is 200 nm or less. The differences in distance between a focal position of the exposure light and the principal surface of the wafer held on the pin chuck are set at 50% or less of a design rule.

摘要翻译： 将晶片保持在销卡盘上，然后通过将通过具有设计图案的掩模的曝光光暴露在保持的晶片的主表面上，将设计图案转印到晶片的主表面。 晶片的下表面具有横截面循环长度为300μm以上的凹凸，开口直径为100μm以下的凹部，形成凹凸凹凸深度的算术平均值为200 nm以下。 将曝光光的焦点位置与保持在销卡盘上的晶片的主表面之间的距离的差设定为设计规则的50％以下。