公开(公告)号：US09064673B2

公开(公告)日：2015-06-23

申请号：US13915149

申请日：2013-06-11

Applicant: Axcelis Technologies, Inc.

Inventor： William Davis Lee ,  Kevin J. Hoyt ,  David Shanner ,  Jason Beringer

IPC: H01L21/673 ,  H01J37/20 ,  H01J37/317 ,  H01L21/687 ,  H01L21/683

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/2007 ,  H01J2237/201 ,  H01L21/6831 ,  H01L21/68785 ,  Y10S901/31

Abstract: A workpiece carrier comprises a first plate having a first outer diameter, a first inner diameter, and a first recess extending a first distance from the first inner diameter toward the first outer diameter. The workpiece carrier further comprises a second plate having a second outer diameter, a second inner diameter, and a second recess extending a second distance from the second inner diameter toward the second outer diameter. A plurality of mating features associated with the first plate and second plate are configured to selectively fix a position of a first workpiece between the first plate and second plate within the first recess and second recess.

Abstract translation: 工件载体包括具有第一外径，第一内径和从第一内径向第一外径延伸第一距离的第一凹槽的第一板。 工件托架还包括具有第二外径，第二内径和从第二内径向第二外径延伸第二距离的第二凹槽的第二板。 与第一板和第二板相关联的多个配合特征被配置为在第一凹部和第二凹部内选择性地将第一工件的位置固定在第一板和第二板之间。

公开(公告)号：US08933424B1

公开(公告)日：2015-01-13

申请号：US14086578

申请日：2013-11-21

Applicant: Axcelis Technologies, Inc.

Inventor： Shu Satoh

IPC: H01J37/317 ,  H01J49/10 ,  H01L21/265 ,  H01J37/04

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30472

Abstract: An ion implantation system and method are provided where an ion source generates an ion and a mass analyzer mass analyzes the ion beam. A beam profiling apparatus translates through the ion beam along a profiling plane in a predetermined time, wherein the beam profiling apparatus measures the beam current across a width of the ion beam concurrent with the translation, therein defining a time and position dependent beam current profile of the ion beam. A beam monitoring apparatus is configured to measure the ion beam current at an edge of the ion beam over the predetermined time, therein defining a time dependent ion beam current, and a controller determines a time independent ion beam profile by dividing the time and position dependent beam current profile of the ion beam by the time dependent ion beam current, therein by cancelling fluctuations in ion beam current over the predetermined time.

Abstract translation: 提供离子注入系统和方法，其中离子源产生离子并且质量分析器质量分析离子束。 光束分析装置在预定时间内沿着成像平面翻转离子束，其中光束分布装置测量与平移同时的离子束的宽度上的束电流，其中限定了时间和位置相关的束电流分布 离子束。 光束监测装置被配置为在预定时间内测量在离子束的边缘处的离子束电流，其中限定了时间依赖的离子束电流，并且控制器通过将时间和位置相关的分配来确定时间独立的离子束分布 离子束的束电流分布由时间依赖的离子束电流，其中通过在预定时间内消除离子束电流的波动。

公开(公告)号：US08692215B2

公开(公告)日：2014-04-08

申请号：US13116661

申请日：2011-05-26

Applicant: William D. Lee ,  William DiVergilio ,  Steve Drummond

Inventor： William D. Lee ,  William DiVergilio ,  Steve Drummond

IPC: H01J37/20 ,  H01J29/00

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/166 ,  H01J2237/2001 ,  H01J2237/20214

Abstract: A workpiece scanning system is provided having a scan arm that rotates about a first axis and a chilled end effector rotatably coupled to the scan arm about a second axis for selectively securing a workpiece. The chilled end effector has a clamping plate and one or more cooling mechanisms for cooling the clamping plate. A bearing is positioned along the second axis and rotatably couples the end effector to the scan arm, and a seal is positioned along the second axis to provide a pressure barrier between an external environment and an internal environment. One or more of the bearing and seal can have a ferrofluid associated therewith. A heater assembly is positioned proximate to the bearing and seal, wherein the heater assembly selectively provides a predetermined amount of heat to the bearing and seal, therein increasing a propensity of the end effector to rotate about the second axis.

Abstract translation: 提供了一种工件扫描系统，其具有围绕第一轴线旋转的扫描臂以及围绕第二轴可旋转地联接到扫描臂的冷冻末端执行器，用于选择性地固定工件。 冷冻末端执行器具有夹紧板和用于冷却夹紧板的一个或多个冷却机构。 轴承沿着第二轴线定位并且将端部执行器可旋转地联接到扫描臂，并且沿着第二轴线定位密封件以在外部环境和内部环境之间提供压力障碍。 轴承和密封件中的一个或多个可以具有与其相关联的铁磁流体。 加热器组件靠近轴承和密封定位，其中加热器组件选择性地向轴承和密封提供预定量的热量，其中增加端部执行器围绕第二轴线旋转的倾向。

公开(公告)号：US08669517B2

公开(公告)日：2014-03-11

申请号：US13474186

申请日：2012-05-17

Applicant: William O. Hamby ,  Joseph Valinski

Inventor： William O. Hamby ,  Joseph Valinski

IPC: H01J37/30 ,  H01J49/00

CPC classification number: H01J37/3171 ,  H01J37/023 ,  H01J37/05 ,  H01J49/30 ,  H01J2237/0455 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/24514

Abstract: A method and apparatus is provided for reducing unwanted isotopes of an ion implantation species from an ion beamline. The apparatus herein disclosed is a mass analysis variable exit aperture that selectively reduces the size of an exit aperture as seen by an ion beam. In one embodiment, the variable mass analysis exit aperture is located within a mass analyzer at a position upstream of a resolving aperture and effectively limits the size of an exit aperture so as to allow passage of desired implantation isotope(s) while blocking the passage of unwanted implantation isotopes. In one particular embodiment, the mass analysis variable exit aperture has a mechanical drive mechanism that enables a blocking structure to be moved into the path of an ion beam in a graduated fashion as guided by a control unit that operates based upon one or more characteristics of the ion beam.

Abstract translation: 提供了一种用于从离子束线减少离子注入物质的不想要的同位素的方法和装置。 本文公开的装置是质量分析可变出口孔，其选择性地减小出口孔的尺寸，如离子束所见。 在一个实施例中，可变质量分析出口孔位于质量分析器内的分辨孔径上游的位置处，并且有效地限制出口孔的尺寸，以允许期望的注入同位素通过，同时阻止 不想要的植入同位素。 在一个具体实施例中，质量分析可变出口孔具有机械驱动机构，其使阻挡结构能够以分级方式移动到离子束的路径中，该控制单元基于一个或多个 离子束。

公开(公告)号：US20130305988A1

公开(公告)日：2013-11-21

申请号：US13475006

申请日：2012-05-18

Applicant: William F. DiVergilio ,  William D. Lee ,  Mike Cristoforo ,  Walter Hrynyk ,  Robert L. Moffett ,  Tomoya Nakatsugawa

Inventor： William F. DiVergilio ,  William D. Lee ,  Mike Cristoforo ,  Walter Hrynyk ,  Robert L. Moffett ,  Tomoya Nakatsugawa

IPC: C23C16/50 ,  H05H1/46

CPC classification number: H01J37/32091 ,  H01J37/3211 ,  H01J37/32412

Abstract: An ion source is disclosed that utilizes a capacitive discharge to produce ignition ions, which are subsequently used to ignite an inductively coupled plasma within a plasma chamber. In some embodiments, a capacitive discharge element is located along a gas feed line at a position that is upstream of a plasma chamber. The capacitive discharge element ignites a capacitive discharge within the gas feed line. The capacitive discharge contains ignition ions that are provided to a downstream plasma chamber. An inductively coupled plasma ignition element, in communication with the plasma chamber, ignites and sustains a high density inductively coupled plasma within the plasma chamber based upon ignition ions from the capacitive discharge. Due to the ignition ions, the inductively coupled plasma element can easily ignite the high density inductively coupled plasma, even at a low pressure.

Abstract translation: 公开了一种利用电容放电来产生点火离子的离子源，其随后用于点燃等离子体室内的感应耦合等离子体。 在一些实施例中，电容放电元件沿着位于等离子体室上游的位置处的气体馈送线定位。 电容放电元件点燃气体馈送线中的电容放电。 电容放电包含提供给下游等离子体室的点火离子。 基于来自电容放电的点火离子，与等离子体室连通的电感耦合等离子体点火元件在等离子体室内点燃和维持高密度感应耦合等离子体。 由于点火离子，即使在低压下，电感耦合等离子体元件也可以容易地点燃高密度电感耦合等离子体。

公开(公告)号：US20130140473A1

公开(公告)日：2013-06-06

申请号：US13308795

申请日：2011-12-01

Applicant: Neil K. Colvin ,  Tseh-Jen Hsieh

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh

IPC: G21K5/00

CPC classification number: H01J37/3171 ,  H01J27/022 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/022

Abstract: An ion implantation system for improving performance and extending lifetime of an ion source is disclosed whereby the selection, delivery, optimization and control of the flow rate of a co-gas into an ion source chamber is automatically controlled.

Abstract translation: 公开了一种离子注入系统，用于提高离子源的性能和延长使用寿命，从而自动控制对气体进入离子源室的流量的选择，输送，优化和控制。

公开(公告)号：US08450701B2

公开(公告)日：2013-05-28

申请号：US13089830

申请日：2011-04-19

Applicant: William P. Reynolds ,  James Gregg ,  Denis Robitaille ,  William D. Lee

Inventor： William P. Reynolds ,  James Gregg ,  Denis Robitaille ,  William D. Lee

IPC: G21K5/04 ,  B01D8/00

CPC classification number: B01D8/00 ,  H01J37/18 ,  H01J37/3171 ,  H01J2237/1825

Abstract: A cold trap filter and method is provided for filtering chemical species from a vacuum system of an ion implantation system. A canister is in fluid communication with an exhaust of a high vacuum pump and an intake of a roughing pump used for evacuating an ion source chamber. One or more paddles are positioned within the canister, wherein each paddle has a cooling line in fluid communication with a coolant source. The coolant source passes a coolant through the cooling line, thus cooling the one or more paddles to a predetermined temperature associated with a condensation or deposition point of the chemical species, therein condensing or depositing the chemical species on the paddles while not interfering with a vacuum capacity of the high vacuum and roughing pumps. The paddles can also be electrically biased to electrostatically attract the chemical species to the paddles in one or more biasing steps.

Abstract translation: 提供了一种冷阱过滤器和方法，用于从离子注入系统的真空系统中过滤化学物质。 罐与高真空泵的废气和用于抽空离子源室的粗抽泵的进气口流体连通。 一个或多个桨叶位于罐内，其中每个桨叶具有与冷却剂源流体连通的冷却管线。 冷却剂源将冷却剂通过冷却管线，从而将一个或多个桨叶冷却到与化学物质的冷凝或沉积点相关联的预定温度，其中将化学物质冷凝或沉积在桨上，同时不干扰真空 高真空和粗抽泵的容量。 桨也可以被电偏置以在一个或多个偏压步骤中静电地将化学物质吸引到桨叶。

公开(公告)号：US20130099131A1

公开(公告)日：2013-04-25

申请号：US13713251

申请日：2012-12-13

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner

IPC: H01J3/14 ,  G21K5/10

CPC classification number: H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract translation: 本发明涉及一种用于在离子束在工件的表面上扫描时改变离子束截面形状的方法和装置，以产生具有改进的离子束电流分布均匀性的时间平均离子束 。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：US08421039B2

公开(公告)日：2013-04-16

申请号：US13077329

申请日：2011-03-31

Applicant: Edward C. Eisner

Inventor： Edward C. Eisner

IPC: G21K5/10 ,  H01J3/12

CPC classification number: H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract translation: 本发明涉及一种用于在离子束在工件的表面上扫描时改变离子束截面形状的方法和装置，以产生具有改进的离子束电流分布均匀性的时间平均离子束 。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：US08378313B2

公开(公告)日：2013-02-19

申请号：US13077112

申请日：2011-03-31

Applicant: Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

Inventor： Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

IPC: H01J3/26 ,  H01J37/147

CPC classification number: H01J37/3171 ,  G21K5/02 ,  G21K5/04 ,  G21K5/10 ,  H01J37/302 ,  H01J2237/30483

Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.

Abstract translation: 一个实施例涉及一种离子注入机。 离子注入机包括用于产生离子束的离子源以及沿着第一轴沿着工件的表面扫描离子束的扫描仪。 离子注入机还包括在扫描器下游的偏转滤波器，以沿着第二轴度将离子束沿工件的表面抖动扫描。