公开(公告)号：US20170049543A1

公开(公告)日：2017-02-23

申请号：US14828808

申请日：2015-08-18

Applicant: International Business Machines Corporation

Inventor： MARK B. STEVENS ,  JOHN D. WILSON

IPC: A61C19/05 ,  A61B5/00 ,  G01L5/00

CPC classification number: A61C19/05 ,  A61B5/4547 ,  A61B5/7425 ,  A61B5/743 ,  A61B2562/0285 ,  A61C7/002 ,  A61C8/00 ,  G01L1/146 ,  G01L1/148 ,  G01L5/00

Abstract: A structure and method of visualizing and evaluating areas of tooth contact between upper and lower teeth when the upper and lower arches of a mouth are in a closed or occluded condition. The method may include performing a plurality of readings of tooth contacts, by a pressure sensing device, during a period of time and determining sensing properties of the tooth contacts based on the plurality of readings, wherein the sensing properties include one or more of: sequence of a first tooth contact relative to at least a second tooth contact, and pressure magnitude of the first tooth contact.

Abstract translation: 一种当嘴巴的上拱和下拱处于闭合或闭塞状态时可视化和评估上下齿之间的牙齿接触区域的结构和方法。 该方法可以包括在一段时间内通过压力感测装置执行齿接触的多个读数，并且基于多个读数确定齿接触的感测特性，其中感测特性包括以下中的一个或多个：序列 相对于至少第二齿接触件的第一齿接触和第一齿接触件的压力大小。

公开(公告)号：US09423308B2

公开(公告)日：2016-08-23

申请号：US14371632

申请日：2013-01-14

Applicant: Robert Anton Brookhuis ,  Theodorus Simon Josef Lammerink ,  Remco John Wiegerink

Inventor： Robert Anton Brookhuis ,  Theodorus Simon Josef Lammerink ,  Remco John Wiegerink

IPC: G01D7/00 ,  G01L1/14 ,  G01L5/16 ,  G01L3/02 ,  G01R27/26 ,  G01P15/125

CPC classification number: G01L1/148 ,  G01L1/142 ,  G01L1/144 ,  G01L3/02 ,  G01L5/165 ,  G01P15/125 ,  G01R27/2605

Abstract: A sensing device for measuring force and/or torque includes a top part with a top electrode structure, a bottom part with a bottom electrode structure, and a support structure. The support structure includes spring elements for supporting the top part on the bottom part with the top electrode structure parallel to and facing the bottom electrode structure. The spring elements provide a gap between the top and bottom electrode structures and allow displacement of the top part relative to the bottom part in three orthogonal directions two parallel and one perpendicular to the bottom plate, and for rotation of the top part relative to the bottom part around three orthogonal axes, corresponding with the two parallel and one perpendicular directions. The displacement and/or rotation induce a change in distance between and/or overlap area of the top and bottom electrodes and a corresponding change of capacitance.

Abstract translation: 用于测量力和/或扭矩的感测装置包括具有顶部电极结构的顶部部分，具有底部电极结构的底部部分和支撑结构。 支撑结构包括用于支撑底部顶部的弹簧元件，顶部电极结构平行于并面向底部电极结构。 弹簧元件在顶部和底部电极结构之间提供间隙，并且允许顶部相对于底部部分在垂直于底板的平行和垂直的三个正交方向上移位，并且允许顶部部分相对于底部 部分围绕三个正交轴，对应于两个平行和一个垂直方向。 位移和/或旋转引起顶部和底部电极之间和/或重叠区域之间的距离和相应的电容变化的变化。

公开(公告)号：US09281415B2

公开(公告)日：2016-03-08

申请号：US13229324

申请日：2011-09-09

Applicant: Zhenan Bao ,  Stefan Christian Bernhardt Mannsfeld ,  Jason Locklin ,  Benjamin Chee-Keong Tee

Inventor： Zhenan Bao ,  Stefan Christian Bernhardt Mannsfeld ,  Jason Locklin ,  Benjamin Chee-Keong Tee

IPC: G01R27/26 ,  H01L29/84 ,  G01L1/14 ,  H01L51/00 ,  H01L51/05

CPC classification number: G01L1/146 ,  G01L1/148 ,  G06F3/0412 ,  G06F3/0414 ,  G06F3/044 ,  G06F2203/04102 ,  G06F2203/04103 ,  G06F2203/04107 ,  H01L29/84 ,  H01L51/0055 ,  H01L51/0541 ,  Y10T29/49002 ,  Y10T156/10

Abstract: Sensors, sensing arrangements and devices, and related methods are provided. In accordance with an example embodiment, an impedance-based sensor includes a flexible dielectric material and generates an output based on pressure applied to the dielectric material and a resulting compression thereof. In certain embodiments, the dielectric material includes a plurality of regions separated by gaps and configured to elastically deform and recover in response to applied pressure.

Abstract translation: 提供了传感器，感测装置和设备以及相关方法。 根据示例实施例，基于阻抗的传感器包括柔性电介质材料，并且基于施加到电介质材料的压力产生输出，并且由此产生压缩。 在某些实施例中，电介质材料包括由间隙分开并被构造为响应于所施加的压力弹性变形和恢复的多个区域。

公开(公告)号：US09117933B2

公开(公告)日：2015-08-25

申请号：US14462382

申请日：2014-08-18

Applicant: Wacom Co., Ltd.

Inventor： Toshihiko Horie ,  Hidetaka Takiguchi

IPC: H01L29/84 ,  G01L9/12 ,  G01L9/14 ,  G01L9/00 ,  G01L1/14

CPC classification number: H01L29/84 ,  G01L1/148 ,  G01L9/0073 ,  G01L9/12 ,  G06F3/03545

Abstract: A capacitive pressure sensing semiconductor device is provided, which has pressure resistance against pressure applied by a pressing member and can detect the pressure surely and efficiently. The pressure sensing semiconductor device includes a pressure detecting part, which detects pressure as a change in capacitance, and a package that receives the pressure detecting part within. The pressure detecting part includes a first electrode and a second electrode disposed to oppose the first electrode, with a determined distance therebetween. Capacitance is formed between the first electrode and the second electrode, and changes according to a change in said distance caused by pressure transmitted to the first electrode by a pressing member. The package also includes a pressure transmitting member that transmits, to the first electrode of the pressure detecting part, the pressure applied by the pressing member.

Abstract translation: 提供一种电容式压力感测半导体器件，其具有抵抗由加压构件施加的压力的耐压性，并且可以有效地检测压力。 压力感测半导体器件包括：压力检测部，其检测作为电容变化的压力;以及接收压力检测部的封装。 压力检测部分包括第一电极和与第一电极相对设置的第二电极，其间具有确定的距离。 在第一电极和第二电极之间形成电容，并且根据通过按压部件传递到第一电极的压力引起的所述距离的变化而变化。 该包装还包括压力传递部件，其将压力检测部件的第一电极传递到由按压部件施加的压力。

公开(公告)号：US20150035092A1

公开(公告)日：2015-02-05

申请号：US14345410

申请日：2011-09-22

Applicant: HONEYWELL ROMANIA SRL

Inventor： Viorel G. Dumitru ,  Ion Georgescu ,  Stefan D. Costea ,  Mihai Brezeanu

IPC: H01L41/02 ,  H01L33/00 ,  H01L29/778 ,  H01L49/02 ,  H01L29/20

CPC classification number: H01L41/02 ,  G01B7/18 ,  G01B7/22 ,  G01L1/146 ,  G01L1/148 ,  G01L1/16 ,  G01L1/18 ,  G01L1/205 ,  G01L1/2293 ,  G01L9/0052 ,  G01L9/0072 ,  G01L9/008 ,  G01L9/0098 ,  H01L28/10 ,  H01L29/2003 ,  H01L29/778 ,  H01L33/00

Abstract: Sensors and methods of operating sensors are described herein. One sensor includes a number of III-nitride strain sensitive devices and a number of passive electrical components that connects each of them to one of the III-nitride strain sensitive devices.

Abstract translation: 传感器和操作传感器的方法在此描述。 一个传感器包括多个III族氮化物应变敏感器件以及将它们中的每一个连接到III族氮化物应变敏感器件中的一种的无源电子部件。

公开(公告)号：US20140353778A1

公开(公告)日：2014-12-04

申请号：US14462382

申请日：2014-08-18

Applicant: Wacom Co., Ltd.

Inventor： Toshihiko Horie ,  Hidetaka Takiguchi

IPC: H01L29/84 ,  G01L9/00 ,  G01L9/12

CPC classification number: H01L29/84 ,  G01L1/148 ,  G01L9/0073 ,  G01L9/12 ,  G06F3/03545

Abstract: A capacitive pressure sensing semiconductor device is provided, which has pressure resistance against pressure applied by a pressing member and can detect the pressure surely and efficiently. The pressure sensing semiconductor device includes a pressure detecting part, which detects pressure as a change in capacitance, and a package that receives the pressure detecting part within. The pressure detecting part includes a first electrode and a second electrode disposed to oppose the first electrode, with a determined distance therebetween. Capacitance is formed between the first electrode and the second electrode, and changes according to a change in said distance caused by pressure transmitted to the first electrode by a pressing member. The package also includes a pressure transmitting member that transmits, to the first electrode of the pressure detecting part, the pressure applied by the pressing member.

Abstract translation: 提供一种电容式压力感测半导体器件，其具有抵抗由加压构件施加的压力的耐压性，并且可以有效地检测压力。 压力感测半导体器件包括：压力检测部，其检测作为电容变化的压力;以及接收压力检测部的封装。 压力检测部分包括第一电极和与第一电极相对设置的第二电极，其间具有确定的距离。 在第一电极和第二电极之间形成电容，并且根据通过按压部件传递到第一电极的压力引起的所述距离的变化而变化。 该包装还包括压力传递部件，其将压力检测部件的第一电极传递到由按压部件施加的压力。

公开(公告)号：US08823114B2

公开(公告)日：2014-09-02

申请号：US13502083

申请日：2010-10-13

Applicant: Shuji Tanaka ,  Masayoshi Esashi ,  Masanori Muroyama ,  Sakae Matsuzaki ,  Mitsutoshi Makihata ,  Yutaka Nonomura ,  Motohiro Fujiyoshi ,  Takahiro Nakayama ,  Ui Yamaguchi ,  Hitoshi Yamada

Inventor： Shuji Tanaka ,  Masayoshi Esashi ,  Masanori Muroyama ,  Sakae Matsuzaki ,  Mitsutoshi Makihata ,  Yutaka Nonomura ,  Motohiro Fujiyoshi ,  Takahiro Nakayama ,  Ui Yamaguchi ,  Hitoshi Yamada

IPC: H01L29/84 ,  H01L23/48 ,  G01L5/22 ,  G01L1/14 ,  B81C1/00 ,  H01L23/00 ,  H01L23/10

CPC classification number: B81C1/00238 ,  B81B2201/0264 ,  B81B2207/012 ,  B81C2201/019 ,  B81C2203/032 ,  B81C2203/0792 ,  G01L1/146 ,  G01L1/148 ,  G01L5/228 ,  H01L23/10 ,  H01L24/04 ,  H01L24/29 ,  H01L24/32 ,  H01L24/82 ,  H01L24/94 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/3512 ,  H01L2924/00

Abstract: Provided is a technique for packaging a sensor structure having a contact sensing surface and a signal processing LSI that processes a sensor signal. The sensor structure has the contact sensing surface and sensor electrodes. The signal processing integrated circuit is embedded in a semiconductor substrate. The sensor structure and the semiconductor substrate are bonded by a bonding layer, forming a sensor device as a single chip. The sensor electrodes and the integrated circuit are sealed inside the sensor device, and the sensor electrodes and external terminals of the integrated circuit are led out to the back surface of the semiconductor substrate through a side surface of the semiconductor substrate.

Abstract translation: 提供了一种用于封装具有接触感测表面的传感器结构和处理传感器信号的信号处理LSI的技术。 传感器结构具有接触感应表面和传感器电极。 信号处理集成电路嵌入在半导体衬底中。 传感器结构和半导体衬底通过接合层粘接，形成传感器装置作为单个芯片。 传感器电极和集成电路密封在传感器装置的内部，并且集成电路的传感器电极和外部端子通过半导体衬底的侧表面被引出到半导体衬底的背面。

公开(公告)号：US08569809B2

公开(公告)日：2013-10-29

申请号：US11580582

申请日：2006-10-13

Applicant: Danielle A. Thomas ,  Bruno J. Debeurre ,  Peter J. Thoma

Inventor： Danielle A. Thomas ,  Bruno J. Debeurre ,  Peter J. Thoma

IPC: G01N27/403 ,  H01L29/66

CPC classification number: G01L1/146 ,  G01L1/148 ,  G01N27/4145 ,  G01N27/4148 ,  G06K9/0002 ,  H01L27/307 ,  H01L51/0508

Abstract: Sensor cells are arranged in an array in an organic semiconductor layer. Row and column select circuitry addresses the cells of the array one cell at a time to determine the presence of an object, such as a fingerprint ridge or valley, contacting or proximate to a sensing surface above each cell. Control circuitry can be provided in a companion silicon chip or in a second layer of organic semiconductor material to communicate with the array and an associated system processor. The array of sensor cells can be fabricated using a flexible polymer substrate that is peeled off and disposed of after contacts have been patterned on the organic semiconductor layer. The organic semiconductor layer can be used with a superimposed reactive interface layer to detect specific chemical substances in a test medium.

Abstract translation: 传感器单元被布置在有机半导体层中的阵列中。 行和列选择电路一次寻址阵列的单元格一个单元，以确定与每个单元上方的感测表面接触或接近的物体（例如指纹脊或谷）的存在。 控制电路可以提供在配套的硅芯片中或在第二有机半导体材料层中提供，以与阵列和相关联的系统处理器通信。 传感器单元的阵列可以使用在有机半导体层上已经被图案化的剥离和放置的柔性聚合物基底来制造。 有机半导体层可以与叠加的反应界面层一起使用以检测测试介质中的特定化学物质。

公开(公告)号：US20130153970A1

公开(公告)日：2013-06-20

申请号：US13722422

申请日：2012-12-20

Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.

Inventor： Ignaz Eisele ,  Martin Heigl ,  Karl Haberger

IPC: H01L29/84 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L29/84 ,  B81B1/00 ,  B81C1/00 ,  G01L1/148 ,  G01L9/0073 ,  H01L21/02 ,  H01L29/51 ,  H01L29/78

Abstract: A transistor structure includes a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate. Additionally, the transistor structure includes a control electrode associated with the channel region, the control electrode having a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region. The distance between the control electrode portion and the channel region is changed based on the action of force.

Abstract translation: 晶体管结构在半导体衬底中包括第一端子区域，第二端子区域和它们之间的沟道区域。 另外，晶体管结构包括与沟道区相关联的控制电极，控制电极具有控制电极部分，该控制电极部分在力作用下可弹性偏转并与沟道区间隔开。 基于力的作用改变控制电极部分和沟道区域之间的距离。

公开(公告)号：US08459128B2

公开(公告)日：2013-06-11

申请号：US12937638

申请日：2008-06-19

Applicant: Navakanta Bhat ,  Rudra Pratap ,  Malhi Charanjeet Kaur

Inventor： Navakanta Bhat ,  Rudra Pratap ,  Malhi Charanjeet Kaur

IPC: G01L1/12

CPC classification number: G01L9/0098 ,  B81B3/0072 ,  G01L1/005 ,  G01L1/148 ,  G01L9/0073

Abstract: The present invention relates to high sensitivity elastic deflection sensors, more particularly related to capacitively coupled FET based elastic deflection sensors. A sub-threshold elastic deflection FET sensor for sensing pressure/force comprises an elastic member forming a moving gate of the sensor, fixed dielectric on substrate of the FET, and a fluid dielectric between the elastic member and the fixed dielectric, wherein alteration in the height of the fluid dielectric (TSENS) due to pressure/force on the elastic member varies the sensor gate capacitance.

Abstract translation: 本发明涉及高灵敏度弹性偏转传感器，更具体地涉及基于电容耦合FET的弹性偏转传感器。 用于感测压力/力的亚阈值弹性偏转FET传感器包括形成传感器的移动栅极的弹性构件，FET的衬底上的固定电介质，以及弹性构件和固定电介质之间的流体电介质，其中， 由于弹性构件上的压力/力引起的流体介质（TSENS）的高度改变传感器栅极电容。