公开(公告)号：US5290993A

公开(公告)日：1994-03-01

申请号：US890184

申请日：1992-05-29

Applicant: Tetsunori Kaji ,  Takashi Fujii ,  Motohiko Yoshigai ,  Yoshinao Kawasaki ,  Masaharu Nishiumi

Inventor： Tetsunori Kaji ,  Takashi Fujii ,  Motohiko Yoshigai ,  Yoshinao Kawasaki ,  Masaharu Nishiumi

IPC: C23C14/34 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  C30B25/02 ,  C30B25/08 ,  H01J37/32 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46 ,  B23K9/00

CPC classification number: H01J37/3244 ,  H01J37/32192 ,  H01J37/32559 ,  H01J37/32706 ,  H05H1/46

Abstract: A microwave plasma processing device is composed of a vacuum chamber which is evacuated to a predetermined pressure and into which processing gas is introduced; a sample table disposed in the vacuum chamber to which an AC voltage is applied; a microwave generating apparatus which generates microwaves and introduces the microwaves towards a surface to be processed of a sample located on the sample table; a magnetic field generating apparatus for generating a magnetic field in the vacuum chamber; an insulator disposed on a part exposed to plasma produced in the vacuum chamber; and a ground electrode disposed at a place which is on a microwave introduction side with respect to the surface of the sample table on which the sample is placed. The ground electrode arranged in an insulator exposed to the plasma is protected by covering the surface of the ground electrode by an insulating film which is so thin that application of an AC voltage is not prevented. In this way the AC voltage is applied at a place where efficiency is high, and stable plasma processing can be effected.

Abstract translation: 微波等离子体处理装置由抽真空至预定压力的真空室构成，并将加工气体引入该真空室; 设置在施加有交流电压的真空室中的样品台; 微波产生装置，其产生微波并将微波引导到位于样品台上的样品待处理表面; 用于在真空室中产生磁场的磁场产生装置; 设置在暴露于在真空室中产生的等离子体的部分上的绝缘体; 以及设置在相对于其上放置有样品的样品台的表面的微波引入侧的位置处的接地电极。 布置在暴露于等离子体的绝缘体中的接地电极通过用非常薄的绝缘膜覆盖接地电极的表面来保护，从而不会阻止施加AC电压。 以这种方式，在效率高的地方施加AC电压，并且可以实现稳定的等离子体处理。

公开(公告)号：US5039388A

公开(公告)日：1991-08-13

申请号：US477726

申请日：1990-02-09

Applicant: Teruo Miyashita ,  Koichi Ito

Inventor： Teruo Miyashita ,  Koichi Ito

IPC: C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC classification number: H01J37/32559 ,  H05H1/46

Abstract: A plasma forming electrode used in pairs disposed in mutually facing spaced parallel relation in a reduced pressure treating chamber, and between which a radio frequency current power is applied to produce a plasma, is formed from preferably highly pure aluminum or an aluminum alloy, and has a chromic acid anodic surface film layer thereon. It has greatly improved durability when used for plasma treatment in the presence of fluorine containing gas.

公开(公告)号：US4419201A

公开(公告)日：1983-12-06

申请号：US295531

申请日：1981-08-24

Applicant: Hyman J. Levinstein ,  Frederick Vratny

Inventor： Hyman J. Levinstein ,  Frederick Vratny

IPC: H01J37/32 ,  H01J37/34 ,  H01L21/02 ,  H01L21/3213 ,  C23C15/00

CPC classification number: H01L21/02071 ,  H01J37/32559 ,  H01J37/34 ,  H01L21/32137 ,  H01J2237/20 ,  Y10S156/914 ,  Y10S156/917

Abstract: In a plasma-assisted etching apparatus and method designed to pattern aluminum or polysilicon, surfaces in the reaction chamber are coated with a layer of aluminum oxide. Contamination of wafers during the etching process is thereby substantially reduced. In practice, this leads to a significant increase in the yield of acceptable chips per wafer.

Abstract translation: 在等离子体辅助蚀刻装置和设计用于图案化铝或多晶硅的方法中，反应室中的表面涂覆有一层氧化铝。 因此，在蚀刻过程中晶片的污染因此显着降低。 在实践中，这导致每个晶片可接受的芯片的产量显着增加。

公开(公告)号：US20240249922A1

公开(公告)日：2024-07-25

申请号：US18628349

申请日：2024-04-05

Applicant: Tokyo Electron Limited

Inventor： Ryota SAKANE

IPC: H01J37/32

CPC classification number: H01J37/3255 ,  H01J37/32091 ,  H01J37/32559 ,  H01J37/32651 ,  H01J37/32577 ,  H01J2237/327

Abstract: A plasma processing apparatus includes a chamber, a power source, a silicon member, and a conductive film. The chamber provides a plasma processing space. The power source supplies radio-frequency power for generating plasma in the plasma processing space. The silicon member is made of a silicon-containing material, is disposed in the chamber, and has a first surface facing the plasma processing space. The conductive film is made of a conductive material and formed on a second surface that does not face the plasma processing space of the silicon member.

公开(公告)号：US20240066161A1

公开(公告)日：2024-02-29

申请号：US17698299

申请日：2022-03-18

Applicant: TellaPure, LLC

Inventor： Edgar Bryan Hill ,  Dawn Price ,  Hidetaka Noda ,  Masahiko Kaneko

IPC: A61L2/14 ,  H01J37/32

CPC classification number: A61L2/14 ,  H01J37/32449 ,  H01J37/32559 ,  H01J37/32577 ,  H01J37/32825 ,  H01J37/32871 ,  A61L2202/11 ,  A61L2209/14 ,  H01J2237/335

Abstract: A plasma generator generates atmospheric pressure, low temperature plasma (cold plasma), and includes a thin plate-like first electrode defining a planar bottom surface. A thin plate-like second electrode defines a planar top surface. The second electrode opposes the first electrode, such that the bottom surface of the first electrode faces the top surface of the second electrode. A first dielectric layer is disposed on the bottom surface of the first electrode, and a second dielectric layer is disposed on the top surface of the second electrode. A spacer supports the first and second electrodes to define a predetermined gap between the first and second dielectric layers. A power supply supplies electrical power to the first and second electrodes at a predetermined voltage and frequency, such that, based on the predetermined gap between the first and second dielectric layers, cold plasma is generated.

公开(公告)号：US11842884B2

公开(公告)日：2023-12-12

申请号：US17692880

申请日：2022-03-11

Applicant: Advanced Energy Industries, Inc.

Inventor： Denis Shaw ,  Kevin Fairbairn ,  Daniel Carter

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32174 ,  H01J37/32412 ,  H01J37/32477 ,  H01J37/32559 ,  H01J37/32568 ,  H01J37/32706 ,  H01J37/32935 ,  H01L21/67109

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US20230395354A1

公开(公告)日：2023-12-07

申请号：US18450635

申请日：2023-08-16

Applicant: Advanced Energy Industries, Inc.

Inventor： Denis Shaw ,  Kevin Fairbairn ,  Daniel Carter

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32174 ,  H01J37/32477 ,  H01L21/67109 ,  H01J37/32412 ,  H01J37/32935 ,  H01J37/32559 ,  H01J37/32568 ,  H01J37/32706

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US20230332564A1

公开(公告)日：2023-10-19

申请号：US18213119

申请日：2023-06-22

Applicant: ThrivalTech, LLC

Inventor： Garrett Hill

IPC: F02M27/04 ,  F02M35/10 ,  H01J37/32

CPC classification number: F02M27/042 ,  F02M35/10019 ,  F02M35/10222 ,  H01J37/32908 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32458 ,  F02M35/10249

Abstract: Disclosed are systems, methods, and devices for generating radicals in an air stream at the intake of an internal combustion engine, as well as increasing the thrust of such air streams into the engine. A plasma generator including plasma actuators, dielectric barrier discharge electrodes, or both is positioned in the intake stream. Plasma actuators are disposed on the interior surface of the plasma generator, exposed to the intake stream. Dielectric barrier discharge electrodes protrude into the intake air stream. Plasma, preferably DBD plasma, glow plasma, or filamentary plasma, is generated in the air intake stream, creating radicals in the stream, mixing the radicals in the stream, and reducing drag while increasing thrust of air in the intake stream. A concentric cylinder can be further disposed in the plasma generator, with further plasma actuators, dielectric barrier discharge electrodes, or both, on the interior and exterior surfaces of the cylinder.

公开(公告)号：US11721528B2

公开(公告)日：2023-08-08

申请号：US17010035

申请日：2020-09-02

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Mikio Sato ,  Eiki Kamata

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32174 ,  H01J37/32559 ,  H01J37/32935

Abstract: There is provided a plasma processing apparatus including: a processing container; a first electrode provided inside the processing container and connected to a high-frequency power supply; a second electrode provided inside the processing container to face the first electrode, the second electrode being grounded; and a film thickness calculator connected to at least one of the first electrode and the second electrode and configured to calculate a thickness of a film deposited on the at least one of the first electrode and the second electrode.

公开(公告)号：US20180138016A1

公开(公告)日：2018-05-17

申请号：US15869649

申请日：2018-01-12

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  C23C4/134 ,  C23C14/08 ,  H01J37/32192 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32559 ,  H01L21/3065

Abstract: The invention is an plasma processing system with a plasma chamber for processing semiconductor substrates, comprising: a radio frequency or microwave power generator coupled to the plasma chamber; a low pressure vacuum system coupled to the plasma chamber; and at least one chamber surface that is configured to be exposed to a plasma, the chamber surface comprising: a YxOyFz layer that comprises Y in a range from 20 to 40%, O in a range from greater than zero to less than or equal to 60%, and F in a range of greater than zero to less than or equal to 75%. Alternatively, the YxOyFz layer can comprise Y in a range from 25 to 40%, O in a range from 40 to 55%, and F in a range of 5 to 35% or Y in a range from 25 to 40%, O in a range from 5 to 40%, and F in a range of 20 to 70%.