Abstract:
A wire clamp includes a pair of clamp arms at a predetermined distance from each other to define an interval therebetween for a bonding wire, a clamp body coupled to the clamp arms, the clamp body configured to adjust the predetermined distance between the clamp arms with respect to a process to be performed, a clamping section in each clamp arm, the clamping section having concave portions facing the interval between the clamp arms, the concave portions being configured to contact the bonding wire when the clamp arms are brought close together, and at least one abrasion prevention member in each clamping section, the abrasion prevention members being configured to prevent abrasion during contact with the bonding wire.
Abstract:
An organic light emitting device includes first, second, and third pixels each displaying a different color. Each pixel includes a first electrode, a second electrode facing the first electrode, and an emission layer between the first and second electrodes. The first electrodes of the first and second pixels respectively include a first transparent conductive layer and a translucent conductive layer disposed on at least one of lower and upper portions of the first transparent conductive layer and forming microcavities together with the second electrodes, and the first electrode of the third pixel includes a second transparent conductive layer that is different from the first transparent conductive layer and a translucent conductive layer disposed on at least one of upper and lower portions of the second transparent conductive layer and forming a microcavity together with the second electrode.
Abstract:
A display device includes a thin film transistor formed on a first insulating substrate, a first electrode electrically connected with the thin film transistor, an emission layer formed on the first electrode, a second electrode formed on the emission layer, an auxiliary electrode shaped like a mesh to at least partially expose the first electrode, the auxiliary electrode being electrically connected with the second electrode and receiving a common voltage therefrom, and a second insulating substrate placed on the auxiliary electrode. The exemplary embodiments of a display device, and a method of manufacturing the same, according to the present invention can apply a common voltage efficiently throughout the display and have an improved contrast ratio.
Abstract:
In one aspect a non-volatile memory device is provided which is operable in a programming mode and a read mode. The memory device includes a memory cell array which includes a plurality of non-volatile memory cells, a plurality of word lines, and a plurality of bit lines. The memory device further includes an internal data output line for outputting data read from the bit lines of the memory array, and a page buffer operatively connected between a bit line of the memory cell array and the internal data output line. The page buffer includes a sense node which is selectively connected to the bit line, a latch circuit having a latch node which is selectively connected to the sense node, a latch input path which sets a logic voltage of the latch node in the programming mode and the read mode, and a latch output path which is separate from the latch input path and which sets as logic voltage of the internal date output line according to the logic voltage of the latch node.
Abstract:
A method for manufacturing an organic light emitting diode (“OLED”) display which includes first and second pixels each displaying a different color, the method includes: sequentially depositing a first transparent conductive layer and a translucent conductive layer; forming an intermediate first electrode on the second pixel by photolithography and etching of the translucent conductive layer; depositing a second transparent conductive layer on the intermediate first electrode and the first transparent conductive layer; forming a first electrode of the first pixel which includes upper and lower layers on the first pixel and a first electrode of the second pixel which includes a lower first electrode, an intermediate first electrode, and an upper first electrode by photolithography and etching of the second transparent conductive layer and the first transparent conductive layer; forming an emission layer on the first electrodes of the first and second pixels; and forming a second electrode on the emission layer.
Abstract:
According to one aspect, a memory cell array includes a bit line connected to a plurality of nonvolatile memory cells, where the nonvolatile memory cells are selectively programmable in any one of at least first, second, third and fourth threshold voltage states, and where the first, second, third and fourth threshold voltage states correspond to four different data values defined by first and second bits. A page buffer circuit stores a logic value as main latch data and is responsive to a main latch signal to selectively flip the logic value of the main latch data according to a voltage level of the bit line. A sub-latch circuit stores a logic value as sub-latch data and is responsive to a sub-latch signal to selectively flip the logic value of the sub-latch data according to the voltage level of the bit line. The memory device is operable in a read mode which reads the threshold voltage state of the non-volatile memory cells and a programming mode which programs the threshold voltage state of the non-volatile memory cells, wherein the page buffer circuit is selectively responsive to the sub-latch data to inhibit flipping of the logic value of the main latch data in the programming mode.
Abstract:
According to one aspect, a memory cell array includes a bit line connected to a plurality of nonvolatile memory cells, where the nonvolatile memory cells are selectively programmable in any one of at least first, second, third and fourth threshold voltage states, and where the first, second, third and fourth threshold voltage states correspond to four different data values defined by first and second bits. A page buffer circuit stores a logic value as main latch data and is responsive to a main latch signal to selectively flip the logic value of the main latch data according to a voltage level of the bit line. A sub-latch circuit stores a logic value as sub-latch data and is responsive to a sub-latch signal to selectively flip the logic value of the sub-latch data according to the voltage level of the bit line. The memory device is operable in a read mode which reads the threshold voltage state of the non-volatile memory cells and a programming mode which programs the threshold voltage state of the non-volatile memory cells, wherein the page buffer circuit is selectively responsive to the sub-latch data to inhibit flipping of the logic value of the main latch data in the programming mode.
Abstract:
Plastic conductive particles having an outer diameter of 2.5 μm˜1 mm obtained by sequentially plating a 0.1˜10 μm thick metal plating layer and a 1˜100 μm thick Pb solder layer or a Pb-free solder layer on plastic core beads having a high elastic modulus of compression, and a method of manufacturing thereof. The method of manufacturing the plastic conductive particles includes preparing plastic core beads having excellent thermal properties and a high elastic modulus of compression, etching surfaces of the plastic core beads for surface treatment thereof, forming a metal plating layer via electroless plating to improve adhesion between the bead surface and the metal plating layer, and then forming a solder layer such that a sealed hexagonal barrel is immersed in an electroplating solution and then an electroplating process is conducted using a mesh barrel rotating 360° at 6˜10 rpm or a mesh barrel having a structure in which one surface of a conventional sealed hexagonal barrel is open, and rotating 200° in right and left directions at 1˜5 rpm, to manufacture plastic conductive particles having a size of 1 mm or less. The plastic conductive particles of this invention enable the maintenance of packaging gaps, and thus can be applied to IC packaging, LCD packaging and other conductive materials.
Abstract:
A memory system and a method of provided scrambled address data are disclosed. The method includes converting external address data into row and column addresses provided to a flash memory device, and designating certain scrambled address data values within the external address data and ignoring a current data access operation associated with external address data including a scrambled address data value, such that the plurality of physical pages in each memory block is not selected by the internal address data.
Abstract:
A display panel includes a plurality of data lines each extended in a first direction substantially parallel with each other, a plurality of driving voltage lines each extended substantially parallel with the plurality of data lines, a plurality of gate lines each extended in a second direction substantially perpendicular to the first direction and a plurality of unit pixels each including a plurality of sub-pixels, each sub-pixel of a corresponding unit pixel having two short sides defined by two adjacent data lines and two long sides defined by two adjacent gate lines. Each sub-pixel of the corresponding unit pixel includes a switching element electrically connected to a same data line of the two adjacent data lines and one of the two adjacent gate lines, and a driving element electrically connected to the switching element and a same driving voltage line, the driving element drives a light-emitting element.