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    HIGH SELECTIVITY GAS PHASE SILICON NITRIDE REMOVAL
    121.
    发明申请
    HIGH SELECTIVITY GAS PHASE SILICON NITRIDE REMOVAL 审中-公开
    高选择性气相氮化硅去除

    公开(公告)号：US20150371865A1

    公开(公告)日：2015-12-24

    申请号：US14308978

    申请日：2014-06-19

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Nitin K. Ingle ,  Anchuan Wang

    IPC: H01L21/311 ,  C09K13/08

    CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J37/3244

    Abstract: A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using partial remote plasma excitation. The remote plasma excites a fluorine-containing precursor and the plasma effluents created are flowed into a substrate processing region. A hydrogen-containing precursor, e.g. water, is concurrently flowed into the substrate processing region without plasma excitation. The plasma effluents are combined with the unexcited hydrogen-containing precursor in the substrate processing region where the combination reacts with the silicon nitride. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon nitride while retaining silicon, such as polysilicon.

    Abstract translation: 描述了在图案化异质结构上蚀刻氮化硅的方法，并且包括使用部分远程等离子体激发的气相蚀刻。 远程等离子体激发含氟前体，产生的等离子体流出物流入基板处理区域。 含氢前体，例如 水同时流入基板处理区域而没有等离子体激发。 等离子体流出物与组合与氮化硅反应的衬底处理区域中的不含氢的前体组合。 等离子体流出物与图案化的异质结构反应以选择性地去除氮化硅，同时保留硅，例如多晶硅。

    Doped silicon oxide etch
    122.
    发明授权
    Doped silicon oxide etch 有权
    掺杂氧化硅蚀刻

    公开(公告)号：US09202708B1

    公开(公告)日：2015-12-01

    申请号：US14523647

    申请日：2014-10-24

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Sang-jin Kim ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311

    CPC classification number: H01L21/31116 ,  H01J37/32357

    Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor or an alcohol. The combination react with the patterned heterogeneous structures to remove two separate regions of silicon oxide at distinct etch rates. The methods may be used to remove doped silicon oxide faster than undoped silicon oxide or more lightly-doped silicon oxide. The relative humidity in the substrate processing region may be low during the etch process to increase the etch selectivity of the doped silicon oxide.

    Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的氧化硅的方法，并且包括使用在远程等离子体中形成的等离子体流出物的气相蚀刻。 远程等离子体与含氧前体组合起来激发含氟前体。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽或醇组合。 该组合与图案化的异质结构反应以以不同的蚀刻速率去除两个分离的氧化硅区域。 该方法可以用于比未掺杂的氧化硅或更多的轻掺杂的氧化硅更快地除去掺杂的氧化硅。 在蚀刻工艺期间，衬底处理区域中的相对湿度可能较低，以增加掺杂氧化硅的蚀刻选择性。

    METHODS FOR ETCH OF METAL AND METAL-OXIDE FILMS
    124.
    发明申请
    METHODS FOR ETCH OF METAL AND METAL-OXIDE FILMS 审中-公开
    金属和金属氧化物膜的蚀刻方法

    公开(公告)号：US20150318186A1

    公开(公告)日：2015-11-05

    申请号：US14746670

    申请日：2015-06-22

    Applicant: Applied Materials, Inc.

    Inventor： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/311 ,  H01L21/3213

    CPC classification number: H01L21/31116 ,  H01J37/32422 ,  H01L21/31122 ,  H01L21/32136

    Abstract: A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

    Abstract translation: 从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括将含氟气体流入基板处理室的等离子体产生区域，并将能量施加到含氟 气体在等离子体产生区域中产生等离子体。 等离子体包括氟自由基和氟离子。 该方法还包括过滤等离子体以提供具有比氟离子更高浓度​​的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。 该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。 反应气体以比反应气体更高的蚀刻速率蚀刻含金属层蚀刻氧化硅层。

    DRY-ETCH FOR SELECTIVE OXIDATION REMOVAL
    125.
    发明申请
    DRY-ETCH FOR SELECTIVE OXIDATION REMOVAL 审中-公开
    干燥剂用于选择性氧化去除

    公开(公告)号：US20150311089A1

    公开(公告)日：2015-10-29

    申请号：US14746655

    申请日：2015-06-22

    Applicant: Applied Materials, Inc.

    Inventor： Sang Hyuk Kim ,  Dongqing Yang ,  Young S. Lee ,  Weon Young Jung ,  Sang-jin Kim ,  Ching-Mei Hsu ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/311

    CPC classification number: H01L21/3065 ,  C23C16/0245 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

    Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

    Abstract translation: 描述了相对于钨，氧化硅，氮化硅和/或氮化钛选择性地蚀刻氧化钨的方法。 这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钨反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钨，同时非常缓慢地除去其它暴露的材料。 在一些实施方案中，氧化钨选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。

    Flash gate air gap
    127.
    发明授权
    Flash gate air gap 有权
    闪光门气隙

    公开(公告)号：US09136273B1

    公开(公告)日：2015-09-15

    申请号：US14222418

    申请日：2014-03-21

    Applicant: Applied Materials, Inc.

    Inventor： Vinod R. Purayath ,  Nitin K. Ingle

    IPC: H01L21/336 ,  H01L27/115

    CPC classification number: H01L29/515 ,  H01J37/32357 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/401 ,  H01L29/4916 ,  H01L29/788

    Abstract: Flash memory cells and methods of formation are described for flash memory cells having air gaps through which electrons may pass to alter the charge state of the floating gate. A dummy gate is initially deposited and a polysilicon gate is deposited on the dummy gate. A silicon oxide film is then deposited on the sides of the active area, the dummy gate and the polysilicon. The silicon oxide film holds the polysilicon in place while the dummy gate is selectively etched away. The dummy gate may be doped to increase etch rate. Formerly, silicon oxide was used as a dielectric barrier through which electrons were passed to charge and discharge the floating gate (polysilicon). Eliminating material in the dielectric barrier reduces the tendency to accumulate trapped charges during use and increase the lifespan of flash memory devices.

    Abstract translation: 对具有气隙的闪存单元描述闪存单元和形成方法，电子可通过该空隙来改变浮动栅极的电荷状态。 最初沉积一个虚拟栅极，并在该虚拟栅极上沉积多晶硅栅极。 然后在有源区域，伪栅极和多晶硅的侧面上沉积氧化硅膜。 氧化硅膜将多晶硅保持就位，同时选择性地蚀刻掉虚拟栅极。 伪栅极可以被掺杂以增加蚀刻速率。 以前，使用氧化硅作为电子通过电介质势垒来对浮栅（多晶硅）进行充电和放电。 在介质屏障中消除材料减少了在使用过程中积聚陷阱电荷的趋势，并增加了闪存器件的使用寿命。

    DIFFERENTIAL SILICON OXIDE ETCH
    128.
    发明申请
    DIFFERENTIAL SILICON OXIDE ETCH 有权
    不同的氧化硅氧化物

    公开(公告)号：US20150249018A1

    公开(公告)日：2015-09-03

    申请号：US14714050

    申请日：2015-05-15

    Applicant: Applied Materials, Inc.

    Inventor： Seung H. Park ,  Yunyu Wang ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/311 ,  H01J37/32

    CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065

    Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.

    Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的氧化硅的方法，并且包括从远程等离子体蚀刻产生的气相蚀刻。 远程等离子体激发含氟前体。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽结合。 由此产生的反应物蚀刻图案化的异相结构，以以不同的蚀刻速率移除不同氧化硅的两个分开的区域。 该方法可用于去除低密度氧化硅，同时去除较少的高密度氧化硅。

    Non-local plasma oxide etch
    129.
    发明授权
    Non-local plasma oxide etch 有权
    非局部等离子体氧化物蚀刻

    公开(公告)号：US09111877B2

    公开(公告)日：2015-08-18

    申请号：US13790668

    申请日：2013-03-08

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

    CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244

    Abstract: A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch, the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.

    Abstract translation: 描述了在异质结构上蚀刻暴露的氧化钛的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物有缺陷到基板处理区域，其中等离子体流出物可与含氮前体（例如含有胺（N））的前体结合。 因此，反应物在衬底处于升高的温度下产生蚀刻，具有高氧化钛选择性的图案化异质结构。 替代地，氧化钛蚀刻可以包括向远程等离子体供应含氟前体和含氮和氢的前体源。 该方法可用于除去少量或不含低K电介质，多晶硅，氮化硅或氮化钛的氧化钛。

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