公开(公告)号：US07323812B2

公开(公告)日：2008-01-29

申请号：US10555296

申请日：2004-09-29

申请人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J9/30

CPC分类号： H01J1/3044 ,  H01J1/304 ,  H01J9/025 ,  H01J29/04 ,  H01J2201/30457

摘要： A method for production includes a step for forming concave molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concave molds of the substrate can have the cubic system crystal orientation (111), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si(111) face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.

摘要翻译： 一种生产方法包括在衬底的表面上形成凹模的步骤以及在含有掺杂材料的气氛中在衬底上生长异质外延金刚石的步骤。 衬底的凹模的斜面的晶体结构可以具有立方体系晶体取向（111），并且掺杂材料是磷。 此外，衬底是Si，并且模具的斜率可以是Si（111）面。 金刚石电子发射装置在其表面上包含投影部分，其中突出部分1的斜面包含金刚石（111）面，并且不是突出部分的平坦部分2包含除（100）面之外的面取向 或（110）面和晶界。

公开(公告)号：US20070272929A1

公开(公告)日：2007-11-29

申请号：US10580346

申请日：2004-11-17

申请人： Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01L29/16 ,  H01L21/00

CPC分类号： H01L29/1602 ,  H01J1/308

摘要： The present invention relates to a diamond n-type semiconductor in which the amount of change in carrier concentration is fully reduced in a wide temperature range. The diamond n-type semiconductor comprises a diamond substrate, and a diamond semiconductor formed on a main surface thereof and turned out to be n-type. The diamond semiconductor exhibits a carrier concentration (electron concentration) negatively correlated with temperature in a part of a temperature region in which it is turned out to be n-type, and a Hall coefficient positively correlated with temperature. The diamond n-type semiconductor having such a characteristic is obtained, for example, by forming a diamond semiconductor doped with a large amount of a donor element while introducing an impurity other than the donor element onto the diamond substrate.

摘要翻译： 本发明涉及一种金刚石n型半导体，其中载体浓度的变化量在宽的温度范围内完全降低。 金刚石n型半导体包括金刚石基板和形成在其主表面上的金刚石半导体，并被证明为n型。 金刚石半导体表现出在其中显示为n型的温度区域的一部分中的载流子浓度（电子浓度）与温度负相关，并且霍尔系数与温度呈正相关。 具有这种特性的金刚石n型半导体例如通过形成掺杂有大量施主元素的金刚石半导体，同时将施主元素以外的杂质引入到金刚石基板上而获得。

公开(公告)号：US07255744B2

公开(公告)日：2007-08-14

申请号：US10506493

申请日：2003-12-22

申请人： Akihiko Namba ,  Takahiro Imai ,  Hisao Takeuchi

发明人： Akihiko Namba ,  Takahiro Imai ,  Hisao Takeuchi

IPC分类号： C30B29/13

CPC分类号： C23C16/448 ,  C23C16/27 ,  C23C16/278 ,  C23C16/482 ,  C30B25/105 ,  C30B29/04 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02634

摘要： Concerns lithium-doped diamond: Low-resistivity n-type semiconductor diamond doped with lithium and nitrogen, and a method of manufacturing such diamond are provided.Low-resistivity n-type semiconductor diamond containing 1017 cm−3 or more of lithium atoms and nitrogen atoms together, in which are respectively doped lithium atoms into carbon-atom interstitial lattice sites, and nitrogen atoms into carbon-atom substitutional sites, with the lithium and the nitrogen holding arrangements that neighbor each other. To obtain low-resistivity n-type semiconductor diamond, in a method for the vapor synthesis of diamond, photodissociating source materials by photoexcitation utilizing vacuum ultraviolet light and irradiating a lithium source material with an excimer laser to scatter and supply lithium atoms enables the diamond to be produced.

摘要翻译： 关注锂掺杂金刚石：提供掺杂有锂和氮的低电阻率n型半导体金刚石，以及制造这种金刚石的方法。 含有10个以上的锂原子和氮原子的10个以上的低电阻率n型半导体金刚石，其中分别将掺杂的锂原子分成碳原子间隙 晶格位点和氮原子转变成碳原子取代位置，其中锂和氮保持排列彼此相邻。 为了获得低电阻率n型半导体金刚石，在金刚石的气相合成方法中，通过使用真空紫外光的光激发光解离源材料并用准分子激光器照射锂源材料来散射和供应锂原子，使得金刚石 生产。

公开(公告)号：US07172957B2

公开(公告)日：2007-02-06

申请号：US11013450

申请日：2004-12-17

申请人： Akihiko Namba ,  Takahiro Imai ,  Yoshiki Nishibayashi

发明人： Akihiko Namba ,  Takahiro Imai ,  Yoshiki Nishibayashi

IPC分类号： H01L21/44

CPC分类号： C30B25/02 ,  C30B29/04 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02444 ,  H01L21/02494 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/041 ,  H01L29/66022 ,  H01L29/66037

摘要： An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.

摘要翻译： 通过处理单晶{100}金刚石衬底10以形成{111}面，然后通过使金刚石外延生长同时n掺杂金刚石{111}面而形成n型金刚石外延层20 。 此外，以上述方式获得的n型半导体金刚石，p型半导体金刚石和非掺杂金刚石以及使用p型单晶{100}金刚石衬底的组合允许 对于pn结型，pnp结型，npn结型和pin结型半导体金刚石。

公开(公告)号：US20060220514A1

公开(公告)日：2006-10-05

申请号：US10555296

申请日：2004-09-29

申请人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J9/00

CPC分类号： H01J1/3044 ,  H01J1/304 ,  H01J9/025 ,  H01J29/04 ,  H01J2201/30457

摘要： A method for production includes a step for forming concaved molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concaved molds of the substrate can have the cubic system crystal orientation (111), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si (111) face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.

摘要翻译： 一种生产方法包括在衬底的表面上形成凹模的步骤以及在含有掺杂材料的气氛中在衬底上生长异质外延的金刚石的步骤。 衬底的凹模的斜面的晶体结构可以具有立方体系晶体取向（111），并且掺杂材料是磷。 此外，衬底是Si，并且模具的斜率可以是Si（111）面。 金刚石电子发射装置在其表面上包含投影部分，其中突出部分1的斜面包含金刚石（111）面，并且不是突出部分的平坦部分2包含除（100）面之外的面取向 或（110）面和晶界。

公开(公告)号：US20060216515A1

公开(公告)日：2006-09-28

申请号：US10566633

申请日：2003-11-12

申请人： Katsuo Kazahaya ,  Shigetaka Kawai ,  Yasushi Matsumoto ,  Keiji Ishibashi ,  Takahiro Imai

发明人： Katsuo Kazahaya ,  Shigetaka Kawai ,  Yasushi Matsumoto ,  Keiji Ishibashi ,  Takahiro Imai

IPC分类号： B32B9/00 ,  B32B19/00 ,  C23C16/00 ,  B05D3/00

CPC分类号： C23C16/27 ,  B23G5/06 ,  B23G2200/26 ,  B23G2225/08 ,  B23G2225/16 ,  B23G2225/28 ,  C23C16/0218 ,  Y10T428/30

摘要： The invention provides a diamond coated tool having an excellent cutting performance, wear resistance, adhesion resistance and work surface roughness in combination and a method of producing such a tool. A diamond coated tool comprising a substrate and a diamond coating formed on the surface of the substrate, wherein said substrate is made of a cemented carbide or a cermet, diamond grains constituting a growth surface of said diamond coating has an average grain size of about 1.5 micrometers or below, said diamond coating has a thickness ranging from about 0.1 micrometer to 20 micrometers, and said diamond coating has an average surface roughness Ra ranging from about 0.01 micrometer to 0.2 micrometer. Such a diamond coated tool can be obtained by carburizing the substrate consisting of a cemented carbide or a cermet, and growing up a diamond coating thereon.

摘要翻译： 本发明提供了具有优异的切削性能，耐磨性，耐粘附性和工作表面粗糙度的金刚石涂层工具的组合以及制造这种工具的方法。 一种金刚石涂层工具，包括在基底表面上形成的基底和金刚石涂层，其中所述基底由硬质合金或金属陶瓷制成，构成所述金刚石涂层的生长表面的金刚石晶粒的平均晶粒尺寸为约1.5 所述金刚石涂层具有约0.1微米至20微米的厚度，并且所述金刚石涂层的平均表面粗糙度Ra为约0.01微米至0.2微米。 这种金刚石涂层工具可以通过将由硬质合金或金属陶瓷组成的基材渗碳并在其上生长金刚石涂层来获得。

公开(公告)号：US20060144702A1

公开(公告)日：2006-07-06

申请号：US10547381

申请日：2004-05-25

申请人： Yuichiro Seki ,  Kenji Izumi ,  Takahiro Imai

发明人： Yuichiro Seki ,  Kenji Izumi ,  Takahiro Imai

IPC分类号： C25C7/02 ,  C25B11/12 ,  C23C16/26 ,  B32B9/00 ,  B32B19/00

CPC分类号： C02F1/46109 ,  C02F2001/46133 ,  C02F2001/46138 ,  C25B11/0442 ,  Y10T428/30

摘要： A diamond electrode having a sufficiently low resistance is disclosed which is realized by increasing the amount of boron added thereto. A method for producing a high-performance, high-durability electrode is also disclosed by which adhesiveness between a diamond coating and a substrate and separation resistance during electrolysis are sufficiently increased. An electrode composed of a substrate and a diamond layer coating the substrate is characterized in that the electrode is composed of a base coated with diamond and the diamond contains boron in such an amount that the boron concentration is not less than 10,000 ppm but not more than 100,000 ppm. The base is preferably made of an insulating material.

摘要翻译： 公开了具有足够低电阻的金刚石电极，其通过增加添加到其中的硼的量来实现。 还公开了一种用于制造高性能，高耐久性电极的方法，其中金刚石涂层和基板之间的粘合性以及电解过程中的分离电阻充分增加。 由基材和涂覆基材的金刚石层组成的电极的特征在于，电极由涂有金刚石的基底组成，金刚石含有硼，其含量不低于10,000ppm但不大于 100,000 ppm。 基部优选由绝缘材料制成。

公开(公告)号：US20060105173A1

公开(公告)日：2006-05-18

申请号：US11267326

申请日：2005-11-07

申请人： Yuichiro Seki ,  Kenji Izumi ,  Takahiro Imai

发明人： Yuichiro Seki ,  Kenji Izumi ,  Takahiro Imai

IPC分类号： B32B3/00 ,  B32B9/00

CPC分类号： C04B41/009 ,  B01D39/2027 ,  B01D39/2068 ,  B01D2239/0241 ,  B01D2239/0478 ,  B01D2239/1216 ,  C02F1/001 ,  C02F1/4672 ,  C02F2001/46138 ,  C02F2001/46161 ,  C02F2101/30 ,  C02F2201/4613 ,  C04B41/5002 ,  C04B41/85 ,  C04B2111/00793 ,  C04B2111/00853 ,  Y10T428/249967 ,  Y10T428/249969 ,  Y10T428/24997 ,  Y10T428/30 ,  C04B41/4531 ,  C04B35/10 ,  C04B35/14 ,  C04B35/185 ,  C04B35/565 ,  C04B35/584 ,  C04B35/581 ,  C04B38/00

摘要： The object of the invention is to provide a porous composite substrate with excellent durability, which can be physically or chemically stable and can be used in severe environment, by providing a coating layer with high corrosion resistance and insulating properties or good electric conductivity if required, on a porous base material having open pores and a filtration function, and to use this porous composite substrate effectively as filters and field electrodes for water treatment or the like. The present invention is a porous composite substrate comprising a composite member, the composite member comprising a porous base material and a diamond layer which covers the porous base material, wherein the porous base material and the composite member have open pores to serve a filtration function. The porous base material is an insulator, a semiconductor, or a metal.

摘要翻译： 本发明的目的是提供具有优异的耐久性的多孔复合基材，其可以物理或化学稳定并且可以在恶劣的环境中使用，通过提供具有高耐蚀性和绝缘性能的涂层或者如果需要，具有良好的导电性， 在具有开孔和过滤功能的多孔基材上，有效地使用该多孔复合基材作为水处理等的过滤器和场电极。 本发明是一种多孔复合基材，其包含复合构件，所述复合构件包括多孔基材和覆盖所述多孔基材的金刚石层，其中所述多孔基材和所述复合构件具有开孔以用作过滤功能。 多孔基材是绝缘体，半导体或金属。

公开(公告)号：US20060044036A1

公开(公告)日：2006-03-02

申请号：US10526471

申请日：2004-03-05

申请人： Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai ,  Tsuneo Nakahara

发明人： Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai ,  Tsuneo Nakahara

IPC分类号： H03K3/037 ,  G09G3/10

CPC分类号： H03K19/06 ,  H01J19/24 ,  H01J21/20 ,  H03K19/08

摘要： A logical operation element and logical operation circuit are provided that are capable of high speed and a high degree of integration. A logical operation circuit has a construction wherein, in a logical operation element, the anodes of first and second field emission type microfabricated electron emitters are put at the same potential and two or more signal voltages are input to gate electrodes corresponding to these emitters. A NOR element so arranged that when a high potential input signal is input to either of the two lines, electron emission occurs from the emitters and the potential of said anodes is lowered, and a NAND element wherein the cathodes of the first and second field emission type microfabricated electron emitters are connected in series, two signal voltages are applied to the gate electrodes corresponding to the first and second emitter and the anode potential of the second emitter is lowered when the two input signals are high potential are employed.

摘要翻译： 提供了能够高速度和高集成度的逻辑运算元件和逻辑运算电路。 逻辑运算电路具有这样的结构，其中在逻辑运算元件中，将第一和第二场致发射型微细加电子发射体的阳极置于相同的电位，并将两个或更多个信号电压输入到对应于这些发射极的栅电极。 一种NOR元件，其被布置成当高电位输入信号被输入到两条线中的任一条时，从发射极发生电子发射，并且所述阳极的电位降低;以及NAND元件，其中第一和第二场致发射的阴极 类型的微制造电子发射体串联连接时，两个信号电压施加到对应于第一和第二发射极的栅电极，并且当采用两个输入信号为高电位时，第二发射极的阳极电位降低。

公开(公告)号：US06958571B2

公开(公告)日：2005-10-25

申请号：US09942101

申请日：2001-08-30

申请人： Yoshiki Nishibayashi ,  Yutaka Ando ,  Kiichi Meguro ,  Takahiro Imai

发明人： Yoshiki Nishibayashi ,  Yutaka Ando ,  Kiichi Meguro ,  Takahiro Imai

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J19/24

CPC分类号： H01J9/025 ,  H01J1/3044

摘要： A method of manufacturing an electron-emitting element (20) for emitting electrons from diamond includes the first step of forming a diamond columnar member (25) on a diamond substrate (21), and the second step of forming an electron-emitting portion (30) having a base portion (36) and a sharp-pointed portion (32) which is located closer to a distal end side than the base portion (36) and emits the electrons by performing etching processing with respect to the columnar member (25).

摘要翻译： 制造用于从金刚石发射电子的电子发射元件（20）的方法包括在金刚石衬底（21）上形成金刚石柱状构件（25）的第一步骤，以及形成电子发射部分 30），其具有位于比基部（36）更靠近远端侧的基部（36）和尖锐部（32），并通过对柱状部件（25）进行蚀刻处理而发射电子 ）。