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    High throughput current-voltage combinatorial characterization tool and method for combinatorial solar test substrates
    121.
    发明授权
    High throughput current-voltage combinatorial characterization tool and method for combinatorial solar test substrates 有权
    用于组合太阳能测试基板的高吞吐量电流 - 电压组合表征工具和方法

    公开(公告)号：US09176181B2

    公开(公告)日：2015-11-03

    申请号：US13971325

    申请日：2013-08-20

    Applicant: Intermolecular, Inc.

    Inventor： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

    IPC: G01R31/26 ,  G01N21/55 ,  H02S50/10

    CPC classification number: G01R31/26 ,  G01N21/55 ,  G01R31/2607 ,  H02S50/10

    Abstract: Measuring current-voltage (I-V) characteristics of a solar cell using a lamp that emits light, a substrate that includes a plurality of solar cells, a positive electrode attached to the solar cells, and a negative electrode peripherally deposited around each of the solar cells and connected to a common ground, an articulation platform coupled to the substrate, a multi-probe switching matrix or a Z-stage device, a programmable switch box coupled to the multi-probe switching matrix or Z-stage device and selectively articulating the probes by raising the probes until in contact with at least one of the positive electrode and the negative electrode and lowering the probes until contact is lost with at least one of the positive electrode and the negative electrode, a source meter coupled to the programmable switch box and measuring the I-V characteristics of the substrate.

    Abstract translation: 使用发光灯的太阳能电池测量电流 - 电压（IV）特性，包括多个太阳能电池的基板，附着到太阳能电池的正电极和周围沉积在每个太阳能电池周围的负电极 并且连接到公共接地，耦合到衬底的关节式平台，多探针开关矩阵或Z级装置，耦合到多探针开关矩阵或Z级装置的可编程开关盒，并且选择性地将探针 通过将探针升高直到与正电极和负电极中的至少一个接触并且降低探针，直到与正电极和负电极中的至少一个接触而丢失，源计量器耦合到可编程开关盒和 测量衬底的IV特性。

    Methods of forming embedded resistors for resistive random access memory cells
    122.
    发明授权
    Methods of forming embedded resistors for resistive random access memory cells 有权
    形成电阻随机存取存储器单元的嵌入式电阻器的方法

    公开(公告)号：US09142764B1

    公开(公告)日：2015-09-22

    申请号：US14563073

    申请日：2014-12-08

    Applicant: Intermolecular Inc.

    Inventor： Yun Wang

    IPC: H01L29/02 ,  H01L45/00

    CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625

    Abstract: Provided are memory cells including resistive switching layers having silicon, oxygen, and nitrogen as well as embedded resistor layers having a metal, silicon, and nitrogen. In some embodiments, silicon may be partially or completely replaced with aluminum. The embedded resistor may also have oxygen. A resistive switching layer directly interfaces an embedded resistor layer of the same cell. A portion of each layer forming this interface may be formed substantially of silicon nitride and may be formed in the same deposition chamber without breaking vacuum. For example, these portions may be formed by sequential atomic layer deposition cycles. However, silicon concentrations in these portions may be different. Specifically, the silicon concentration of the embedded resistor portion may be less than the silicon concentration of the resistive switching layer portion. This variation may be achieved by varying one or more process conditions during fabrication of the memory cell.

    Abstract translation: 提供了包括具有硅，氧和氮的电阻性开关层以及具有金属，硅和氮的嵌入式电阻层的存储单元。 在一些实施例中，硅可以部分地或完全地被铝替代。 嵌入式电阻器也可以具有氧气。 电阻式开关层直接连接相同电池的嵌入式电阻层。 形成该界面的每个层的一部分可以基本上由氮化硅形成，并且可以形成在相同的沉积室中而不破坏真空。 例如，这些部分可以通过连续的原子层沉积循环形成。 然而，这些部分中的硅浓度可能不同。 具体地，嵌入式电阻部分的硅浓度可以小于电阻式开关层部分的硅浓度。 这种变化可以通过在存储单元的制造期间改变一个或多个工艺条件来实现。

    Atomic layer deposition of metal oxide materials for memory applications
    123.
    发明授权
    Atomic layer deposition of metal oxide materials for memory applications 有权
    用于记忆应用的金属氧化物材料的原子层沉积

    公开(公告)号：US09130165B2

    公开(公告)日：2015-09-08

    申请号：US14506298

    申请日：2014-10-03

    Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

    Inventor： Yun Wang ,  Tony P. Chiang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik

    IPC: H01L47/00 ,  H01L45/00 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L27/24

    CPC classification number: H01L45/145 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

    Abstract: Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.

    Abstract translation: 本发明的实施例一般涉及非易失性存储器件，例如ReRAM单元，以及用于制造这种存储器件的方法，其包括用于形成金属氧化物膜堆叠的优化的原子层沉积（ALD）工艺。 金属氧化物膜堆叠包含设置在金属氧化物主体层上的金属氧化物耦合层，每个层具有不同的晶粒结构/尺寸。 设置在金属氧化物层之间的界面有助于氧空位移动。 在许多示例中，与垂直于电极界面延伸的体膜中的晶粒相反，界面是不对齐的晶粒界面，其包含平行于电极界面延伸的许多晶界。 因此，氧空缺在切换期间被捕获和释放，而空位明显损失。 因此，与以前的存储单元的传统的基于氧化铪的堆叠相比，金属氧化物膜堆叠在存储单元应用中具有改进的开关性能和可靠性。

    Voltage Controlling Assemblies Including Variable Resistance Devices
    125.
    发明申请
    Voltage Controlling Assemblies Including Variable Resistance Devices 有权
    包括可变电阻器件的电压控制组件

    公开(公告)号：US20150188492A1

    公开(公告)日：2015-07-02

    申请号：US14140821

    申请日：2013-12-26

    Applicant: Intermolecular Inc.

    Inventor： Federico Nardi ,  Yun Wang

    IPC: H03B7/06

    CPC classification number: H03B7/06 ,  G11C11/16 ,  G11C13/0002 ,  G11C13/0038 ,  G11C13/0061 ,  H03K3/0231

    Abstract: Provided are voltage controlling assemblies that may be operable as clocks and/or oscillators. A voltage controlling assembly may include a comparator and a variable resistance device connected to one differential signal node of the comparator. The other node may be connected to a capacitor. Alternatively, no capacitors may be used in the assembly. During operation of the voltage controlling assembly, the variable resistance device changes its resistance between two different resistive states. The change from a low to a high resistive state may be associated with a voltage spike at the differential signal node of the comparator and trigger a response from the comparator. This resistance change may have a delay determining an operating frequency of the voltage controlling assembly. Specifically, the variable resistance device in the low resistive state may be kept for a period of time at a certain voltage before it switches into the high resistive state.

    Abstract translation: 提供了可以用作时钟和/或振荡器的电压控制组件。 电压控制组件可以包括连接到比较器的一个差分信号节点的比较器和可变电阻器件。 另一个节点可以连接到电容器。 或者，组件中不能使用电容器。 在电压控制组件的操作期间，可变电阻器件改变其在两个不同电阻状态之间的电阻。 从低电阻状态到高电阻状态的变化可能与比较器的差分信号节点处的电压尖峰相关联，并且触发来自比较器的响应。 该电阻变化可以具有确定电压控制组件的工作频率的延迟。 具体地说，低电阻状态的可变电阻器件在切换到高电阻状态之前，可以将其保持一定时间。

    Diffusion Barrier Layer for Resistive Random Access Memory Cells
    126.
    发明申请
    Diffusion Barrier Layer for Resistive Random Access Memory Cells 审中-公开
    电阻随机存取存储单元的扩散阻挡层

    公开(公告)号：US20150188048A1

    公开(公告)日：2015-07-02

    申请号：US14644382

    申请日：2015-03-11

    Applicant: Intermolecular Inc.

    Inventor： Yun Wang ,  Imran Hashim

    IPC: H01L45/00

    CPC classification number: H01L45/146 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

    Abstract: Provided are resistive random access memory (ReRAM) cells having diffusion barrier layers formed from various materials, such as beryllium oxide or titanium silicon nitrides. Resistive switching layers used in ReRAM cells often need to have at least one inert interface such that substantially no materials pass through this interface. The other (reactive) interface may be used to introduce and remove defects from the resistive switching layers causing the switching. While some electrode materials, such as platinum and doped polysilicon, may form inert interfaces, these materials are often difficult to integrate. To expand electrode material options, a diffusion barrier layer is disposed between an electrode and a resistive switching layer and forms the inert interface with the resistive switching layer. In some embodiments, tantalum nitride and titanium nitride may be used for electrodes separated by such diffusion barrier layers.

    Abstract translation: 提供了具有由各种材料形成的扩散阻挡层的电阻随机存取存储器（ReRAM）单元，例如氧化铍或钛硅氮化物。 在ReRAM单元中使用的电阻开关层通常需要具有至少一个惰性界面，使得基本上没有材料通过该界面。 另一个（反应式）接口可用于引入和去除导致切换的电阻式开关层的缺陷。 虽然一些电极材料（例如铂和掺杂多晶硅）可能形成惰性界面，但是这些材料通常难以整合。 为了扩大电极材料选择，扩散阻挡层设置在电极和电阻开关层之间，并与电阻式开关层形成惰性界面。 在一些实施例中，氮化钽和氮化钛可用于由这种扩散阻挡层分开的电极。

    Embedded Resistors for Resistive Random Access Memory Cells
    127.
    发明申请
    Embedded Resistors for Resistive Random Access Memory Cells 审中-公开
    用于电阻随机存取存储器的嵌入式电阻器

    公开(公告)号：US20150188044A1

    公开(公告)日：2015-07-02

    申请号：US14140668

    申请日：2013-12-26

    Applicant: Intermolecular Inc.

    Inventor： Yun Wang ,  Mihir Tendulkar

    IPC: H01L45/00

    CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145

    Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. The ReRAM cells may include a first layer formed on a substrate. The first layer may be operable as a bottom electrode. The ReRAM cells may also include a second layer formed over the first layer. The second layer may be operable as a variable resistance layer configured to switch reversibly between at least a first resistive state and a second resistive state. The ReRAM cells may further include a third layer formed over the second layer. The third layer may have an electrical resistivity that is substantially constant. Moreover, the third layer may include a ternary metal carbide. The ReRAM cells may also include a fourth layer formed over the third layer. The fourth layer may be operable as a top electrode.

    Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元可以包括形成在基板上的第一层。 第一层可以用作底部电极。 ReRAM单元还可以包括形成在第一层上的第二层。 第二层可以用作可配置为在至少第一电阻状态和第二电阻状态之间可逆地切换的可变电阻层。 ReRAM单元还可以包括形成在第二层上的第三层。 第三层可具有基本恒定的电阻率。 此外，第三层可以包括三元金属碳化物。 ReRAM单元还可以包括形成在第三层上的第四层。 第四层可以用作顶部电极。

    Metal organic chemical vapor deposition of resistive switching layers for ReRAM cells
    130.
    发明授权
    Metal organic chemical vapor deposition of resistive switching layers for ReRAM cells 有权
    用于ReRAM电池的电阻式开关层的金属有机化学气相沉积

    公开(公告)号：US09029192B1

    公开(公告)日：2015-05-12

    申请号：US14135765

    申请日：2013-12-20

    Applicant: Intermolecular Inc.

    Inventor： Chien-Lan Hsueh ,  Yun Wang

    IPC: H01L21/00 ,  H01L21/16 ,  H01L45/00

    CPC classification number: H01L45/1616 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

    Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof using metal organic chemical vapor deposition (MOCVD). Specifically, the MOCVD is used to form a resistive switching layer including oxides of at least two elements. The resistive switching layer may have a variable composition throughout its thickness, which may be achieved by dynamically varying flow rates of metal organic precursors during MOCVD of the resistive switching layer. In some embodiments, the first element may be a transition metal, while the second element may be a component forming an insulating oxide. The second element may be concentrated in the middle of the resistive switching layer between its bottom and top sides and may not be present at either one of these sides. Such distribution of materials allows controlling the size and composition of a switching zone within the resistive switching layer and reducing power needed for switching.

    Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其使用金属有机化学气相沉积（MOCVD）制造的方法。 具体地，MOCVD用于形成包括至少两个元素的氧化物的电阻开关层。 电阻式开关层可以在整个厚度上具有可变的组成，其可以通过在电阻式开关层的MOCVD期间动态改变金属有机前体的流速来实现。 在一些实施例中，第一元件可以是过渡金属，而第二元件可以是形成绝缘氧化物的元件。 第二元件可以集中在其底部和顶侧之间的电阻式开关层的中间，并且可能不存在于这些侧中的任一侧。 这种材料分配允许控制电阻式开关层内的开关区的尺寸和组成，并减少开关所需的功率。

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