公开(公告)号：US09111806B2

公开(公告)日：2015-08-18

申请号：US14496404

申请日：2014-09-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi Ito ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Junichiro Sakata

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L27/1225 ,  G09G3/20 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/247 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

Abstract translation: 目的是控制氧化物半导体的组成和缺陷，另一个目的是增加薄膜晶体管的场效应迁移率，并获得具有减小的截止电流的足够的开 - 关比。 解决方案是使用其组成由InMO 3（ZnO）m表示的氧化物半导体，其中M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素，m优选为非 - 整数大于0且小于1. Zn的浓度低于In和M的浓度。氧化物半导体具有无定形结构。 可以提供氧化物和氮化物层以防止氧化物半导体的污染和劣化。

公开(公告)号：US09006046B2

公开(公告)日：2015-04-14

申请号：US13975453

申请日：2013-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Makoto Furuno

IPC: H01L21/00 ,  H01L29/66 ,  H01L27/06 ,  H01L29/49 ,  H01L27/115 ,  H01L27/12 ,  C23C14/00 ,  H01L21/02 ,  C23C14/08 ,  H01L49/02 ,  C23C14/34 ,  H01L29/786

CPC classification number: H01L21/02266 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/3407 ,  C23C14/3414 ,  H01L21/02112 ,  H01L21/8232 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1251 ,  H01L28/60 ,  H01L29/4908 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

Abstract: An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.

Abstract translation: 本发明的目的是提供一种通过DC溅射法形成氧化镓膜的沉积方法。 另一个目的是提供一种使用氧化镓膜作为绝缘层的半导体器件的制造方法，例如晶体管的栅极绝缘层。 使用包含氧化镓（也称为GaOX）的氧化物靶，通过DC溅射法或脉冲DC溅射法形成绝缘膜。 氧化物靶包括GaOX，X小于1.5，优选大于或等于0.01且小于或等于0.5，进一步优选大于或等于0.1且小于或等于0.2。 氧化物靶具有导电性，并且在氧气气氛或氧气和稀有气体如氩气的混合气氛中进行溅射。

公开(公告)号：US08981642B2

公开(公告)日：2015-03-17

申请号：US14056173

申请日：2013-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Hideko Inoue ,  Satoshi Seo ,  Nobuharu Ohsawa

IPC: H01J1/62 ,  H01J63/04 ,  H01L51/52 ,  H01L51/50 ,  H01L51/00

CPC classification number: H01L51/5203 ,  H01L51/006 ,  H01L51/0067 ,  H01L51/008 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0087 ,  H01L51/009 ,  H01L51/5012

Abstract: A light-emitting element is provided which has a light-emitting layer between a first electrode and a second electrode, where the light-emitting layer has a first layer and a second layer; the first layer contains a first organic compound and a third organic compound; the second layer contains a second organic compound and the third organic compound; the first layer is provided to be in contact with the second layer on the first electrode side; the first organic compound is an organic compound with an electron transporting property; the second organic compound is an organic compound with a hole transporting property; the third organic compound has an electron trapping property; and light emission from the third organic compound can be obtained when voltage is applied to the first electrode and the second electrode so that the potential of the first electrode is higher than that of the second electrode.

Abstract translation: 提供一种在第一电极和第二电极之间具有发光层的发光元件，其中发光层具有第一层和第二层; 第一层包含第一有机化合物和第三有机化合物; 第二层包含第二有机化合物和第三有机化合物; 第一层设置成与第一电极侧的第二层接触; 第一有机化合物是具有电子传输性质的有机化合物; 第二有机化合物是具有空穴传输性的有机化合物; 第三有机化合物具有电子捕获性; 并且当对第一电极和第二电极施加电压使得第一电极的电位高于第二电极的电位时，可以获得来自第三有机化合物的发光。

公开(公告)号：US08963149B2

公开(公告)日：2015-02-24

申请号：US14297733

申请日：2014-06-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/10 ,  H01L29/41733

Abstract: A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

Abstract translation: 提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。 薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜， 以及设置在金属氧化物膜上的金属膜。 氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。 在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

公开(公告)号：US08889496B2

公开(公告)日：2014-11-18

申请号：US13917012

申请日：2013-06-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Shuhei Yoshitomi ,  Takahiro Tsuji ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hiroyuki Tomatsu ,  Masahiko Hayakawa

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/335 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

Abstract translation: 本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。 形成保护绝缘层以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，以及在比第一热处理低的温度下进行第二热处理，其中， 重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以 制造。

公开(公告)号：US20140319519A1

公开(公告)日：2014-10-30

申请号：US14330113

申请日：2014-07-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Inoue ,  Masashi Tsubuku ,  Suzunosuke Hiraishi ,  Junichiro Sakata ,  Erumu Kikuchi ,  Hiromichi Godo ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L31/18 ,  H01L29/24 ,  H01L31/032

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L31/032 ,  H01L31/18

Abstract: An oxide semiconductor layer in which “safe” traps exist exhibits two kinds of modes in photoresponse characteristics. By using the oxide semiconductor layer, a transistor in which light deterioration is suppressed to the minimum and the electric characteristics are stable can be achieved. The oxide semiconductor layer exhibiting two kinds of modes in photoresponse characteristics has a photoelectric current value of 1 pA to 10 nA inclusive. When the average time τ1 until which carriers are captured by the “safe” traps is large enough, there are two kinds of modes in photoresponse characteristics, that is, a region where the current value falls rapidly and a region where the current value falls gradually, in the result of a change in photoelectric current over time.

Abstract translation: “安全”陷阱存在的氧化物半导体层表现出光响应特性的两种模式。 通过使用氧化物半导体层，可以实现将光劣化抑制到最小并且电特性稳定的晶体管。 在光响应特性中表现出两种模式的氧化物半导体层具有1pA至10nA的光电流值。 当通过“安全”陷阱捕获载流子的平均时间τ1足够大时，光响应特性即电流值急剧下降的区域和电流值逐渐下降的区域有两种模式 在光电流随时间变化的结果中。

公开(公告)号：US20140287546A1

公开(公告)日：2014-09-25

申请号：US14299045

申请日：2014-06-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Junichiro Sakata ,  Yoshiharu Hirakata ,  Norihito Sone

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3244 ,  H01L27/322 ,  H01L27/3276 ,  H01L51/5048 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/52 ,  H01L51/5206 ,  H01L51/5215 ,  H01L51/5218 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/56

Abstract: Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.

Abstract translation: 提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。 这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度 形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。 根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。

公开(公告)号：US08692454B2

公开(公告)日：2014-04-08

申请号：US13946635

申请日：2013-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Hisao Ikeda ,  Takahiro Kawakami

IPC: H05B33/00

CPC classification number: H01L27/3218 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/06 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1033 ,  C09K2211/1044 ,  C09K2211/185 ,  C09K2211/188 ,  H01L27/3211 ,  H01L27/3213 ,  H01L27/3295 ,  H01L51/5012 ,  H01L51/5088 ,  H01L51/5092 ,  H01L2227/32 ,  H01L2251/5323 ,  H01L2251/5369 ,  H01L2251/564 ,  Y10S428/917

Abstract: An EL element having a novel structure is provided, which is suitable for AC drive. A light-emitting element of the invention is provided with material layers (material layers each having approximately symmetric I-V characteristics with respect to the zero point in a graph having the abscissa axis showing current values and the ordinate axis showing voltage values) between a first electrode and a layer including an organic compound and between the layer including the organic compound and a second electrode respectively. Specifically, each of the material layers is a composite layer including a metal oxide and an organic compound.

Abstract translation: 提供具有新颖结构的EL元件，其适用于交流驱动。 本发明的发光元件设置有第一电极（第一电极和第二电极）之间的材料层（相对于图中的零点具有近似对称的IV特性的材料层，横坐标轴表示电流值，纵轴表示电压值） 以及包含有机化合物的层和分别包含有机化合物的层和第二电极之间的层。 具体地，每个材料层是包含金属氧化物和有机化合物的复合层。

公开(公告)号：US12272697B2

公开(公告)日：2025-04-08

申请号：US18519471

申请日：2023-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toshinari Sasaki ,  Junichiro Sakata ,  Masashi Tsubuku

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H10K59/121 ,  H10K59/123

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

公开(公告)号：US12224355B2

公开(公告)日：2025-02-11

申请号：US18504297

申请日：2023-11-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Jun Koyama

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.