公开(公告)号：US10079307B2

公开(公告)日：2018-09-18

申请号：US14585953

申请日：2014-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Junichiro Sakata ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78618 ,  H01L27/1225 ,  H01L29/7869

Abstract: An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.

公开(公告)号：US10002949B2

公开(公告)日：2018-06-19

申请号：US14489522

申请日：2014-09-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869

Abstract: An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using a metal whose work function is lower than the work function of the oxide semiconductor layer or an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.

公开(公告)号：US09952724B2

公开(公告)日：2018-04-24

申请号：US14686109

申请日：2015-04-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Hironobu Takahashi ,  Yuki Okamoto ,  Isamu Shigemori

IPC: G06F3/044 ,  G06F3/041 ,  G09G3/3233 ,  G09G3/36 ,  H01L27/32

CPC classification number: G06F3/044 ,  G06F3/0418 ,  G06F2203/04102 ,  G06F2203/04103 ,  G09G3/3233 ,  G09G3/3648 ,  G09G2320/029 ,  G09G2330/12 ,  G09G2380/02 ,  H01L27/3225 ,  H01L27/323 ,  H01L27/3262 ,  H01L2251/5338

Abstract: A flexible display device with high viewability is provided. The display device includes a first substrate, a second substrate, a first element layer, and a second element layer. The first element layer is positioned between the first substrate and the second substrate. The second element layer is positioned between the first substrate and the second substrate. The first element layer and the second element layer overlap with each other in a region. The first substrate and the second substrate have flexibility. The first element layer includes a display element and a first circuit. The display element is electrically connected to the first circuit. The second element layer includes a sensor element. The sensor element has a function of sensing distortion.

公开(公告)号：US09852926B2

公开(公告)日：2017-12-26

申请号：US15295016

申请日：2016-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Yukinori Shima

IPC: H01L21/385 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/385 ,  H01L21/46 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device including an oxide conductor with high conductivity and high transmittance is provided. A manufacturing method for a semiconductor device includes the steps of: forming an oxide semiconductor over a first insulator; forming a second insulator over the first insulator and the oxide semiconductor; forming a first conductor over the second insulator; forming an etching mask over the first conductor; forming a second conductor including a region overlapping with the oxide semiconductor by etching the first conductor with use of the etching mask as a mask; removing the etching mask; and performing heat treatment after forming a hydrogen-containing layer over the second insulator and the second conductor.

公开(公告)号：US09842942B2

公开(公告)日：2017-12-12

申请号：US15478617

申请日：2017-04-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Toshinari Sasaki

IPC: H01L27/15 ,  H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/32

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

公开(公告)号：US09793416B2

公开(公告)日：2017-10-17

申请号：US15254529

申请日：2016-09-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu Miyairi ,  Kengo Akimoto ,  Yasuo Nakamura

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/26 ,  H01L29/66 ,  H01L21/02 ,  H01L21/465 ,  H01L21/467 ,  H01L21/4763 ,  H01L21/3213 ,  H01L29/06 ,  H01L29/10 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/78696 ,  H01L21/02323 ,  H01L21/02565 ,  H01L21/32139 ,  H01L21/465 ,  H01L21/467 ,  H01L21/4763 ,  H01L21/47635 ,  H01L27/1225 ,  H01L29/0692 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/263 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

公开(公告)号：US09589988B2

公开(公告)日：2017-03-07

申请号：US14515959

申请日：2014-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Atsushi Umezaki

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L21/02 ,  H01L29/12 ,  G09G3/32

CPC classification number: H01L27/124 ,  G09G3/3233 ,  G09G2310/0286 ,  G09G2310/0297 ,  H01L21/02565 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/12 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518

Abstract: With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. The increase in the numbers of gate lines and signal lines makes it difficult to mount an IC chip having a driver circuit for driving the gate line and the signal line by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit driving the pixel portion are provided over the same substrate. The pixel portion and at least a part of the driver circuit are formed using thin film transistors in each of which an oxide semiconductor is used. Both the pixel portion and the driver circuit are provided over the same substrate, whereby manufacturing costs are reduced.

Abstract translation: 随着显示装置的定义的增加，像素的数量增加，因此栅极线和信号线的数量增加。 栅极线和信号线的数量的增加使得难以安装具有用于通过接合等驱动栅极线和信号线的驱动电路的IC芯片，这导致制造成本的增加。 驱动像素部的像素部和驱动电路设置在同一基板上。 像素部分和驱动电路的至少一部分使用薄膜晶体管形成，其中每个使用氧化物半导体。 像素部分和驱动电路均设置在相同的基板上，由此降低了制造成本。

公开(公告)号：US09397194B2

公开(公告)日：2016-07-19

申请号：US14790609

申请日：2015-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto

IPC: H01L29/66 ,  H01L29/49 ,  H01L29/786 ,  H01L29/26 ,  H01L29/417

CPC classification number: H01L29/7869 ,  G02F1/13306 ,  G02F1/136286 ,  G02F1/1368 ,  G09G3/3648 ,  G09G2300/0426 ,  G09G2300/0857 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/24 ,  H01L29/26 ,  H01L29/41775 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78636 ,  H01L29/78693 ,  H01L29/78696

Abstract: A thin film transistor structure in which a source electrode and a drain electrode formed from a metal material are in direct contact with an oxide semiconductor film may lead to high contact resistance. One cause of high contact resistance is that a Schottky junction is formed at a contact plane between the source and drain electrodes and the oxide semiconductor film. An oxygen-deficient oxide semiconductor layer which includes crystal grains with a size of 1 nm to 10 nm and has a higher carrier concentration than the oxide semiconductor film serving as a channel formation region is provided between the oxide semiconductor film and the source and drain electrodes.

Abstract translation: 其中由金属材料形成的源电极和漏电极与氧化物半导体膜直接接触的薄膜晶体管结构可能导致高接触电阻。 高接触电阻的一个原因是在源电极和漏电极和氧化物半导体膜之间的接触平面处形成肖特基结。 在氧化物半导体膜与源电极和漏电极之间，设置氧含量不足的氧化物半导体层，其含有尺寸为1nm〜10nm，比作为沟道形成区域的氧化物半导体膜高的载流子浓度的晶粒 。

公开(公告)号：US09360564B2

公开(公告)日：2016-06-07

申请号：US14467161

申请日：2014-08-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kengo Akimoto ,  Junichi Koezuka ,  Hironobu Takahashi

IPC: A61B6/00 ,  H01L27/146 ,  G01T1/20

CPC classification number: G01T1/2018 ,  A61B6/4208 ,  H01L27/14663

Abstract: To provide an imaging device that is highly stable when exposed to radiation such as X-rays. The imaging device includes a substrate, a pixel circuit, and a scintillator which are stacked in order. The pixel circuit includes a light-receiving element and a circuit portion electrically connected to the light-receiving element. The substrate is provided with a heater. A transistor in the pixel circuit is heated by the passage of a current through the heater at times other than imaging, thus, degradation of the electrical characteristics of the transistor due to X-ray irradiation can be recovered.

Abstract translation: 提供当暴露于诸如X射线的辐射时高度稳定的成像装置。 成像装置包括依次层叠的基板，像素电路和闪烁体。 像素电路包括光接收元件和电连接到光接收元件的电路部分。 基板设有加热器。 像素电路中的晶体管通过在成像之外的时间通过加热器的电流而被加热，因此可以恢复由于X射线照射引起的晶体管的电特性的劣化。

公开(公告)号：US09349874B2

公开(公告)日：2016-05-24

申请号：US14278521

申请日：2014-05-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Toshinari Sasaki

IPC: H01L21/48 ,  H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.