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    METHOD OF MANUFACTURING AN INTEGRATED SEMICONDUCTOR OPTICAL WAVEGUIDING DEVICE
    121.
    发明申请
    METHOD OF MANUFACTURING AN INTEGRATED SEMICONDUCTOR OPTICAL WAVEGUIDING DEVICE 审中-公开

    公开(公告)号：US20190285801A1

    公开(公告)日：2019-09-19

    申请号：US16354414

    申请日：2019-03-15

    申请人： Finisar Sweden AB

    发明人： David Adams ,  Martin Anders Isak Stattin ,  Christopher Daunt

    IPC分类号： G02B6/136

    摘要： A method of manufacturing an integrated semiconductor optical waveguiding device comprising an elongated waveguide, the method comprising: providing a material stack comprising a substrate layer, an anisotropically wet etchable conductive layer, a waveguiding core layer, an etch-guiding layer between the substrate layer and the waveguiding core layer, and InP material between the etch-guiding layer and the waveguiding core layer; etching said material stack down to and including said waveguiding core layer, to form an elongated shape of the elongated waveguide together with an etched area laterally beside the waveguide; providing an etch mask material across the formed waveguide; and wet etching parts of said etched areas that are not protected by the etch mask, to remove material of the etch-guiding layer across a lateral direction of the waveguide, forming a laterally extending through tunnel in the etch-guiding layer and in the conductive layer.

    TRANSMISSION LINES USING BENDING FINS FROM LOCAL STRESS
    122.
    发明申请
    TRANSMISSION LINES USING BENDING FINS FROM LOCAL STRESS 审中-公开

    公开(公告)号：US20190278022A1

    公开(公告)日：2019-09-12

    申请号：US16462077

    申请日：2016-12-30

    申请人： Intel Corporation

    发明人： Rahul RAMASWAMY ,  Chia-Hong JAN ,  Walid HAFEZ ,  Neville DIAS ,  Hsu-Yu CHANG ,  Roman W. OLAC-VAW ,  Chen-Guan LEE

    IPC分类号： G02B6/122 ,  G02B6/12 ,  G02B6/134 ,  G02B6/136

    摘要： Embodiments of the invention include an electromagnetic waveguide and methods of forming electromagnetic waveguides. In an embodiment, the electromagnetic waveguide may include a first semiconductor fin extending up from a substrate and a second semiconductor fin extending up from the substrate. The fins may be bent towards each other so that a centerline of the first semiconductor fin and a centerline of the second semiconductor fin extend from the substrate at a non-orthogonal angle. Accordingly, a cavity may be defined by the first semiconductor fin, the second semiconductor fin, and a top surface of the substrate. Embodiments of the invention may include a metallic layer and a cladding layer lining the surfaces of the cavity. Additional embodiments may include a core formed in the cavity.

    SEMICONDUCTOR INTEGRATED OPTICAL DEVICE
    123.
    发明申请
    SEMICONDUCTOR INTEGRATED OPTICAL DEVICE 审中-公开

    公开(公告)号：US20190267412A1

    公开(公告)日：2019-08-29

    申请号：US16283191

    申请日：2019-02-22

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. ,  SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.

    发明人： Hideki Yagi ,  Naoko Konishi ,  Koji Ebihara ,  Takuya Okimoto

    IPC分类号： H01L27/144 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/105 ,  H01L31/0304 ,  H01L31/18 ,  G02B6/136 ,  G02B6/12 ,  G02B6/13

    摘要： A semiconductor integrated optical device includes: a supporting base including semi-insulating semiconductor; a first photoelectric convertor having first photodiode mesas; a second photoelectric convertor having second photodiode mesas; a first 90° optical hybrid having at least one first multimode waveguide mesa; a second 90° optical hybrid having at least one second multimode waveguide mesa; an optical divider mesa; first and second input waveguide mesas coupling the first and second 90° optical hybrids with the optical divider mesa, respectively; a conductive semiconductor region disposed on the supporting base, the conductive semiconductor region mounting the first photodiode mesas, the second photodiode mesas, the first multimode waveguide mesas, the second multimode waveguide mesas, and the optical divider mesa; a first island semiconductor mesa extending between the first and second multimode waveguide mesas; and a first groove extending through the first island semiconductor mesa and the conductive semiconductor region to the semi-insulating semiconductor.

    Waveguides with multiple-level airgaps
    124.
    发明授权
    Waveguides with multiple-level airgaps 有权

    公开(公告)号：US10393960B1

    公开(公告)日：2019-08-27

    申请号：US15905165

    申请日：2018-02-26

    申请人： GLOBALFOUNDRIES Inc.

    发明人： Steven M. Shank ,  Siva P. Adusumilli

    IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/136 ,  G02B6/132 ,  G02B6/13

    摘要： Waveguide structures and methods of fabricating waveguide structures. A first airgap is formed in a bulk semiconductor substrate, and a semiconductor layer is epitaxially grown over the bulk semiconductor substrate and the first airgap. First and second trench isolation regions extend through the semiconductor layer and into the bulk semiconductor substrate, and are spaced to define a waveguide core region including a section of the bulk semiconductor substrate and a section of the semiconductor layer that are arranged between the first and second trench isolation regions. A dielectric layer is formed over the waveguide core region, and a second airgap is formed in the dielectric layer. The first airgap is arranged in the bulk semiconductor substrate between the first trench isolation region and the second trench isolation region and under the waveguide core region. The second airgap in the dielectric layer is arranged over the waveguide core region.

    Curved-edge optical mode converter for heat-assisted magnetic recording
    125.
    发明授权
    Curved-edge optical mode converter for heat-assisted magnetic recording 有权

    公开(公告)号：US10388310B1

    公开(公告)日：2019-08-20

    申请号：US16135251

    申请日：2018-09-19

    申请人： Seagate Technology LLC

    发明人： Christopher Neil Harvey ,  Aidan Dominic Goggin ,  Kelly Elizabeth Callan ,  John Bernard McGurk ,  Reyad Mehfuz

    IPC分类号： G11B11/00 ,  G11B5/48 ,  G02B6/122 ,  G11B11/105 ,  G11B7/1387 ,  G02B6/126 ,  G02B6/132 ,  G02B6/27 ,  G02B6/136 ,  G11B5/00 ,  G11B5/60

    摘要： An apparatus includes an input coupler configured to receive light excited by a light source. A near-field transducer (NFT) is positioned at a media-facing surface of a write head. A layered waveguide is positioned between the input coupler and the NFT and configured to receive the light output from the input coupler in a transverse electric (TE) mode and deliver the light to the NFT in a transverse magnetic (TM) mode. The layered waveguide comprises a first layer extending along a light-propagation direction. The first layer is configured to receive light from the input coupler. The first layer tapers from a first cross track width to a second cross track width where the second cross track width is narrower than the first cross track width. The layered waveguide includes a second layer that is disposed on the first layer. The second layer has a cross sectional area in a plane perpendicular to the light propagation direction that increases along the light propagation direction. The cross sectional area of the second layer is smaller proximate to the input coupler and larger proximate to the NFT. The layered waveguide includes an interface between the first layer and the second layer, the interface comprises a curve.