Abstract:
A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.
Abstract:
A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate.
Abstract:
Disclosed herein are an ice maker and method including an ice container to store ice, and a refrigerator having the same. The ice maker includes an ice making unit that receives water and produces ice from the water, a first ice container that receives the ice separated from the ice making unit, and an ice forwarding unit disposed at one side of the first ice container to guide the ice to be discharged to the outside.
Abstract:
The present invention provides an organic light emitting diode comprising a substrate comprising a first sub-pixel, a second sub-pixel, and a third sub-pixel; a first electrode disposed on the substrate; a second electrode facing the first electrode; an emission layer disposed between the first electrode and the second electrode; and a first layer disposed between the first electrode and the second electrode and containing an ambipolar compound, and a method for manufacturing the organic light emitting diode.
Abstract:
The present invention relates to a polymer supported reagent comprising a novel crosslinked mesoporous polymer, enabling a simple and easy production of an azoxy compound or an azo compound from an aromatic nitro compound, and a method of selectively reducing an aromatic nitro compound by using the same. The polymer supported reagent comprises a certain acrylamide mesoporous crosslinked polymer.
Abstract:
Disclosed are a phenyl-isoxazol derivative compound, which is useful as a treatment material for virus infection, especially, infection of an influenza virus, or its pharmaceutically acceptable derivative, a preparation method thereof, and an illness treatment pharmaceutical composition including the compound as an active ingredient.
Abstract:
Disclosed herein are various methods of forming isolation structures on FinFETs and other semiconductor devices, and the resulting devices that have such isolation structures. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define a fin for a FinFET device, forming a layer of insulating material in the trenches, wherein the layer of insulating material covers a lower portion of the fin but not an upper portion of the fin, forming a protective material on the upper portion of the fin, and performing a heating process in an oxidizing ambient to form a thermal oxide region on the covered lower portion of the fin.
Abstract:
A heterocyclic compound represented by Formula 1 below and an organic light-emitting device including the heterocyclic compound: wherein X1 and X2, X1 and R1 to R10 are defined as in the specification.
Abstract:
The present invention relates to a utility iron which is characterized in that it has a lie angle of 58 to 64°, a loft angle of 20 to 28°, a head weight of 270 to 300g, and a shaft length of 35 to 38 inches. Thus, the loft angle is relatively reduced so as to prevent a golf ball from being hit high and increasing flight distance. Also, because the lie angle is relatively increased, the possibility of a hook or a slice occurring is reduced. Because the weight of the head is increased, repulsive force is augmented by the striking of the golf ball, which relatively increases the flight distance of the golf ball. Because the length of the shaft is relatively shortened, swing trajectory is reduced, and accurate striking is made easier so as to also increase flight distance.