公开(公告)号：US08324525B2

公开(公告)日：2012-12-04

申请号：US12129091

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: B23K10/00

CPC classification number: H05H1/46 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32935

Abstract: A method processing a workpiece in a plasma reactor chamber in which a first one of plural applied RF plasma powers is modulated in accordance with a time-varying modulation control signal corresponding to a desired process transient cycle. The method achieves a reduction in reflected power by modulating a second one of the plural plasma powers in response to the time-varying modulation control signal.

Abstract translation: 一种在等离子体反应室中处理工件的方法，其中根据对应于期望的过程瞬态循环的时变调制控制信号调制多个施加的RF等离子体功率中的第一个。 该方法通过响应于时变调制控制信号调制多个等离子体功率中的第二个来实现反射功率的降低。

公开(公告)号：US20120241091A1

公开(公告)日：2012-09-27

申请号：US13492531

申请日：2012-06-08

Applicant: Zhigang Chen ,  Shahld Rauf ,  Kartik Ramaswamy

Inventor： Zhigang Chen ,  Shahld Rauf ,  Kartik Ramaswamy

IPC: H01L21/465

CPC classification number: H01J37/32706 ,  H01J37/32091

Abstract: Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes.

Abstract translation: 本发明的实施例提供一种在处理室内提供良好RF均匀性的装置。 在一个实施例中，装置包括基板支撑组件，端子和电介质绝缘体。 基板支撑组件具有沿着中心轴线形成的中心通道。 提供RF传输线。 RF传输线具有基本上垂直的部分和基本上水平的部分，其中端子耦合到RF传输线的基本水平的部分。 电介质绝缘体围绕RF传输线的大致水平部分。 电介质绝缘体具有端子通过的第一开口。

公开(公告)号：US08264154B2

公开(公告)日：2012-09-11

申请号：US12465319

申请日：2009-05-13

Applicant: Samer Banner ,  Valentin Todorow ,  Kartik Ramaswamy

Inventor： Samer Banner ,  Valentin Todorow ,  Kartik Ramaswamy

IPC: H01J7/24

CPC classification number: H01J37/32146 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32174

Abstract: Embodiments of the present invention generally provide methods and apparatus for pulsed plasma processing over a wide process window. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply and a common controller for tuning each of the RF power supply and the matching network.

Abstract translation: 本发明的实施例通常提供了用于在宽处理窗口上进行脉冲等离子体处理的方法和装置。 在一些实施例中，装置可以包括具有频率调谐的RF电源和耦合到RF电源的匹配网络，共享用于读取反射回RF电源的反射RF功率的公共传感器。 在一些实施例中，装置可以包括具有频率调谐的RF电源和耦合到RF电源的匹配网络，共享用于读取反射回RF电源的反射RF功率的公共传感器，以及用于调谐每个 射频电源和匹配网络。

公开(公告)号：US20120193456A1

公开(公告)日：2012-08-02

申请号：US13363342

申请日：2012-01-31

Applicant: Dmitry Lubomirsky ,  Kartik Ramaswamy ,  Kallol Bera ,  Jennifer Sun

Inventor： Dmitry Lubomirsky ,  Kartik Ramaswamy ,  Kallol Bera ,  Jennifer Sun

IPC: B05B1/14

CPC classification number: C23C16/5096 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32559

Abstract: Embodiments of the present invention provide a gas distribution plate assembly having protective elements for plasma processing. The gas distribution plate assembly includes a base plate having a front side and a backside, and a plurality of protective elements in direct contact with the base plate. The protective elements cover the front side of the base plate to protect the base plate from a plasma processing environment during use.

Abstract translation: 本发明的实施例提供一种具有用于等离子体处理的保护元件的气体分配板组件。 气体分配板组件包括具有前侧和后侧的基板，以及与基板直接接触的多个保护元件。 保护元件覆盖基板的前侧，以在使用过程中保护基板免受等离子体处理环境的影响。

公开(公告)号：US08206552B2

公开(公告)日：2012-06-26

申请号：US12146189

申请日：2008-06-25

Applicant: Zhigang Chen ,  Shahid Rauf ,  Kartik Ramaswamy

Inventor： Zhigang Chen ,  Shahid Rauf ,  Kartik Ramaswamy

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC classification number: H01J37/32706 ,  H01J37/32091

Abstract: Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes.

Abstract translation: 本发明的实施例提供一种在处理室内提供良好RF均匀性的装置。 在一个实施例中，装置包括基板支撑组件，端子和电介质绝缘体。 基板支撑组件具有沿着中心轴线形成的中心通道。 提供RF传输线。 RF传输线具有基本上垂直的部分和基本上水平的部分，其中端子耦合到RF传输线的基本水平的部分。 电介质绝缘体围绕RF传输线的大致水平部分。 电介质绝缘体具有端子通过的第一开口。

公开(公告)号：US08148977B2

公开(公告)日：2012-04-03

申请号：US12360664

申请日：2009-01-27

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Lawrence Wong ,  Chinh Dinh

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Lawrence Wong ,  Chinh Dinh

IPC: G01R33/02

CPC classification number: G01R33/0206 ,  G01R33/0023

Abstract: Embodiments of sensor devices for characterizing magnetic fields formed in substrate processing systems and methods of use thereof are provided herein. In some embodiments, an apparatus for characterizing a magnetic field in a substrate processing system may include a carrier having a form substantially similar to a substrate to be processed in the substrate processing system. One or more magnetic sensors are disposed on the carrier for measuring a magnitude of a magnetic field formed in the processing system in an x-, y-, and z-direction. A microprocessor is coupled to the one or more magnetic sensors to sample data representative of the magnitude of the magnetic field in the x-, y-, and z-directions proximate a position of each sensor. A memory device is coupled to the microprocessor for storing the sampled data. A power source is provided to supply power to each magnetic sensor and the microprocessor.

Abstract translation: 本文提供了用于表征在基板处理系统中形成的磁场的传感器装置的实施例及其使用方法。 在一些实施例中，用于表征衬底处理系统中的磁场的装置可以包括具有基本上类似于在衬底处理系统中要处理的衬底的形式的载体。 一个或多个磁传感器设置在载体上，用于测量在x，y和z方向上在处理系统中形成的磁场的大小。 微处理器耦合到一个或多个磁性传感器以对表示在每个传感器的位置附近的x，y和z方向上的磁场的大小的数据进行采样。 存储器件耦合到微处理器以存储采样数据。 提供电源以向每个磁传感器和微处理器供电。

公开(公告)号：US07994872B2

公开(公告)日：2011-08-09

申请号：US12506658

申请日：2009-07-21

Applicant: Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

Inventor： Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

IPC: H03H7/40

CPC classification number: H03H7/38

Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

Abstract translation: 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。

公开(公告)号：US20110186545A1

公开(公告)日：2011-08-04

申请号：US12905624

申请日：2010-10-15

Applicant: Chetan MAHADESWARASWAMY ,  Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Chunlei ZHANG ,  Yashaswini B. PATTAR ,  Duy D. NGUYEN ,  Tina TSONG ,  Shane C. NEVIL ,  Douglas A. BUCHBERGER, JR. ,  Fernando M. SILVEIRA ,  Brad L. MAYS ,  Kartik RAMASWAMY ,  Hamid NOORBAKHSH

Inventor： Chetan MAHADESWARASWAMY ,  Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Chunlei ZHANG ,  Yashaswini B. PATTAR ,  Duy D. NGUYEN ,  Tina TSONG ,  Shane C. NEVIL ,  Douglas A. BUCHBERGER, JR. ,  Fernando M. SILVEIRA ,  Brad L. MAYS ,  Kartik RAMASWAMY ,  Hamid NOORBAKHSH

IPC: C23F1/08 ,  C23F1/00 ,  C23C16/50 ,  C23C16/458 ,  C23C16/52 ,  G05D23/00

CPC classification number: H01J37/32009 ,  G05B6/02 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/334 ,  H05H1/0081

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。 温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

公开(公告)号：US07988815B2

公开(公告)日：2011-08-02

申请号：US11828568

申请日：2007-07-26

Applicant: Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

Inventor： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/16 ,  H01J37/20 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32697 ,  H01J37/32834

Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

Abstract translation: 通过提供旁路电流流动路径，RF接地回流电流从反应室的不对称特征转向。 一个旁路电流流动路径避免了室底部中的泵送端口，并且包括从侧壁延伸到接地基座的导电对称格栅。 另一个旁路电流流动路径避免了晶片狭缝阀，并且包括桥接由狭缝阀占据的侧壁部分的导电带阵列。

公开(公告)号：US20110009999A1

公开(公告)日：2011-01-13

申请号：US12502037

申请日：2009-07-13

Applicant: Chunlei Zhang ,  Lawrence Wong ,  Kartik Ramaswamy ,  James P. Cruse ,  Hiroji Hanawa

Inventor： Chunlei Zhang ,  Lawrence Wong ,  Kartik Ramaswamy ,  James P. Cruse ,  Hiroji Hanawa

IPC: H01L21/306 ,  B05C11/00 ,  G06F19/00

CPC classification number: H01J37/32183 ,  H01J37/32091

Abstract: An impedance match at an RF generator output of a plasma reactor includes plural minimum-seeking loop controllers having respective feedback input ports coupled to receive a reflected RF power signal from a reflected power sensing circuit and respective control output ports. The output ports are coupled to variable reactances of an impedance match circuit that is connected between the RF generator and an RF power applicator of the reactor.

Abstract translation: 在等离子体电抗器的RF发生器输出端处的阻抗匹配包括多个最小寻求环路控制器，其具有耦合以从反射功率感测电路和相应控制输出端口接收反射的RF功率信号的各个反馈输入端口。 输出端口耦合到连接在RF发生器和反应器的RF功率施加器之间的阻抗匹配电路的可变电抗。