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    Nonvolatile memory
    131.
    发明授权
    Nonvolatile memory 有权
    非易失性存储器

    公开(公告)号：US07525852B2

    公开(公告)日：2009-04-28

    申请号：US12048208

    申请日：2008-03-13

    申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

    发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

    IPC分类号： G11C5/14

    CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

    摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

    摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

    MOTOR DRIVE DEVICE
    132.
    发明申请
    MOTOR DRIVE DEVICE 有权
    电机驱动装置

    公开(公告)号：US20090039812A1

    公开(公告)日：2009-02-12

    申请号：US11945386

    申请日：2007-11-27

    申请人： Toshiaki Sone ,  Akira Sakoguchi ,  Hiroyuki Ueki ,  Takeshi Nakamura ,  Akira Sasaki

    发明人： Toshiaki Sone ,  Akira Sakoguchi ,  Hiroyuki Ueki ,  Takeshi Nakamura ,  Akira Sasaki

    IPC分类号： H02H7/085

    CPC分类号： B60N2/2213 ,  B60N2/0244 ,  H02P29/0241

    摘要： The present invention presents a motor drive device capable of detecting jamming accurately without falsely detecting jamming when a movable part contacts with other members. Jamming by a backrest is detected by judging whether the value of a period of one pulse P1 and a period of the next pulse P2 (P2/P1) integrated for 150 times (integrated value: 150) exceeds a specified threshold (160) or not. Accordingly, if the backrest rubs against a backrest of an adjacent seat, and the motor speed suddenly drops for a short period, such “warp” is not falsely detected as jamming, and only actual jamming can be detected securely.

    摘要翻译： 本发明提供了一种电动机驱动装置，其能够在可动部件与其他部件接触时能够精确地检测卡纸而不会错误地检测到卡纸。 通过判断一个脉冲P1的周期的值是否累积150次（积分值：150）的下一个脉冲P2（P2 / P1）的周期的值是否超过规定的阈值（160）来检测靠背的干扰 。 因此，如果靠背摩擦相邻座椅的靠背，并且马达速度在短时间内突然下降，则这种“翘曲”不会被错误地检测为卡纸，并且只能牢固地检测到实际的卡纸。

    Speaker system
    136.
    发明授权
    Speaker system 有权
    扬声器系统

    公开(公告)号：US07447316B2

    公开(公告)日：2008-11-04

    申请号：US10733040

    申请日：2003-12-11

    申请人： Takeshi Nakamura

    发明人： Takeshi Nakamura

    IPC分类号： H04R5/00 ,  H04R5/02

    CPC分类号： H04R1/403 ,  H04R3/12

    摘要： A speaker system includes a main speaker and a subordinate speaker arranged around the main speaker. A pseudo-spherical wave is generated around the main speaker as a whole such that both speakers are vibrated in the frequency range of piston vibration and are in phase and that the propagation speed of a sound wave produced by the vibration of the subordinate speaker is preferably lower than the propagation speed of a sound wave produced by the vibration of the main speaker.

    摘要翻译： 扬声器系统包括主扬声器和布置在主扬声器周围的下级扬声器。 在主扬声器的整体周围产生伪球面波，使得两个扬声器在活塞振动的频率范围内振动并且同相，并且由下级扬声器的振动产生的声波的传播速度优选为 低于由主扬声器的振动产生的声波的传播速度。

    Secure mailbox printing system with authentication on both host and device
    137.
    发明申请
    Secure mailbox printing system with authentication on both host and device 有权
    安全邮箱打印系统，具有主机和设备的身份验证

    公开(公告)号：US20080065894A1

    公开(公告)日：2008-03-13

    申请号：US11519724

    申请日：2006-09-12

    申请人： Lida Wang ,  Hiromasa Akamatsu ,  Yuichi Komori ,  Takeshi Nakamura ,  Toshitsugu Nishimi ,  Masayuki Orita

    发明人： Lida Wang ,  Hiromasa Akamatsu ,  Yuichi Komori ,  Takeshi Nakamura ,  Toshitsugu Nishimi ,  Masayuki Orita

    IPC分类号： H04L9/00

    CPC分类号： H04L9/083 ,  H04L9/0866 ,  H04L63/0428 ,  H04L63/062 ,  H04L63/083

    摘要： A method for secure communication and printing, comprising: user entering user and destination information to host; authentication server producing, saving encryption key for the job, user, and destination information into database, and sending to host; host encrypting the job using encryption key and sending job to destination; user entering user and destination information to device; authentication server retrieving encryption key from database, and sending to device; and device decrypting the job using encryption key and releasing job. Authentication at both host and MFP sides disables unauthorized, malicious attack to a user's mailbox, and results in jobs to a mailbox having different dynamic encryption keys, and no password or mailbox PIN trafficking on network. Furthermore, host and MFP can be at different domains. Methods also include secrecy encrypting encryption key; hashing key generator using SHA1, MD5, etc.; password, PIN, RFID, biometrics; and timer module deleting jobs older than threshold value from storage.

    摘要翻译： 一种用于安全通信和打印的方法，包括：用户向主机输入用户和目的地信息; 认证服务器生成，将作业，用户和目的地信息的加密密钥保存到数据库中，并发送给主机; 主机使用加密密钥加密作业并将作业发送到目的地; 用户向设备输入用户和目的地信息; 认证服务器从数据库检索加密密钥，并发送到设备; 并且设备使用加密密钥解密作业并释放作业。 主机和MFP两端的身份验证会禁止对用户邮箱进行未经授权的恶意攻击，并导致具有不同动态加密密钥的邮箱的作业，以及网络上没有密码或邮箱PIN广告管理。 此外，主机和MFP可以在不同的域。 方法还包括密码加密密钥; SHA1，MD5等散列密钥发生器; 密码，PIN，RFID，生物识别; 并且定时器模块从存储器中删除比阈值更早的作业。

    VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device
    138.
    发明申请
    VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device 有权
    具有改进的高频特性的VCSEL，半导体激光器件，模块和光传输器件

    公开(公告)号：US20080043793A1

    公开(公告)日：2008-02-21

    申请号：US11706597

    申请日：2007-02-15

    申请人： Nobuaki Ueki ,  Naotaka Mukoyama ,  Ryoji Ishii ,  Takeshi Nakamura

    发明人： Nobuaki Ueki ,  Naotaka Mukoyama ,  Ryoji Ishii ,  Takeshi Nakamura

    IPC分类号： H01S5/183

    CPC分类号： H01S5/18311 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/06226 ,  H01L2924/00014

    摘要： A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the substrate and electrically connected with the first semiconductor layer, a second electrode wiring formed on the main surface of the substrate and electrically connected with the second semiconductor layer, and a light emitting portion formed on the substrate for emitting laser light. A contact portion at which the first electrode wiring is electrically connected to the first semiconductor layer is formed in a range equal to or greater than π/2 radians and within π radians, centering on the light emitting portion.

    摘要翻译： 包括基板的VCSEL，在基板上形成的第一导电型的第一半导体层，形成在第一半导体层上的有源层，形成在有源层上的第二导电型的第二半导体层，第一电极 形成在基板的主表面上并与第一半导体层电连接的布线，形成在基板的主表面上并与第二半导体层电连接的第二电极布线，以及形成在基板上用于发射的发光部分 激光灯。 第一电极布线与第一半导体层电连接的接触部分形成在等于或大于pi / 2弧度的范围内，并且以pi弧度为单位，以发光部分为中心。

    Nonvolatile memory
    139.
    发明申请
    Nonvolatile memory 有权
    非易失性存储器

    公开(公告)号：US20070206418A1

    公开(公告)日：2007-09-06

    申请号：US11797842

    申请日：2007-05-08

    申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

    发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

    IPC分类号： G11C29/00

    CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

    摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

    摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

    Nonvolatile memory
    140.
    发明授权
    Nonvolatile memory 有权

    公开(公告)号：US07230859B2

    公开(公告)日：2007-06-12

    申请号：US11330233

    申请日：2006-01-12

    申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

    发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

    IPC分类号： G11C7/10

    CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

    摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.