公开(公告)号：US09406880B2

公开(公告)日：2016-08-02

申请号：US14478408

申请日：2014-09-05

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Jun Liu

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1683

Abstract: Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.

Abstract translation: 本文描述了具有限制的灯丝形成的电阻记忆。 一个或多个方法实施例包括在硅材料上形成具有硅材料和氧化物材料的堆叠中的开口，以及在邻近硅材料的开口中形成氧化物材料，其中形成在开口中的氧化物材料限制在 电阻性存储单元到形成在开口中的氧化物材料包围的区域。

公开(公告)号：US20160211019A1

公开(公告)日：2016-07-21

申请号：US15084191

申请日：2016-03-29

Applicant: Micron Technology, Inc.

Inventor： Jun Liu

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/003 ,  G11C13/004 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2213/72 ,  G11C2213/74

Abstract: Embodiments disclosed include memory cell operating methods, memory cell programming methods, memory cell reading methods, memory cells, and memory devices. In one embodiment, a memory cell includes a wordline, a first bitline, a second bitline, and a memory element. The memory element is electrically connected to the wordline and selectively electrically connected to the first bitline and the second bitline. The memory element stores information via a resistive state of the memory element. The memory cell is configured to convey the resistive state of the memory element via either a first current flowing from the first bitline through the memory element to the wordline or a second current flowing from the wordline through the memory element to the second bitline.

公开(公告)号：US09397290B2

公开(公告)日：2016-07-19

申请号：US14840252

申请日：2015-08-31

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jun Liu

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: H01L45/06 ,  G11C13/0004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/16

Abstract: Memory cells useful in phase change memory include a phase change material between first and second electrode and having a surface facing a surface of the second electrode. The second electrode comprises a plurality of portions of material, each portion having a respective distance from the surface of the phase change material and each portion having a respective resistivity. A portion of the plurality of portions of material farthest from the surface of the phase change material has a lowest resistivity and a portion of the plurality of portions of material closest to the surface of the phase change material has a highest resistivity. The resistivity of each individual portion is lower than the resistivity of each portion located closer to the surface of the phase change material, and higher than the resistivity of each portion located farther from the surface of the phase change material.

Abstract translation: 在相变存储器中有用的存储器单元包括第一和第二电极之间的相变材料，并且具有面向第二电极的表面的表面。 第二电极包括多个材料部分，每个部分具有与相变材料的表面相对应的距离，并且每个部分具有相应的电阻率。 离相变材料表面最远的多个材料部分的一部分具有最低的电阻率，并且最靠近相变材料表面的多个材料部分的一部分具有最高的电阻率。 每个单独部分的电阻率低于位于相变材料表面附近的每个部分的电阻率，并且高于位于离相变材料表面更远的每个部分的电阻率。

公开(公告)号：US20160172586A1

公开(公告)日：2016-06-16

申请号：US15048746

申请日：2016-02-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jun Liu ,  Jian Li

IPC: H01L45/00 ,  G11C13/00

CPC classification number: H01L45/06 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/008 ,  G11C2213/52 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141

Abstract: Embodiments disclosed herein may relate to heating a phase change memory (PCM) cell.

公开(公告)号：US20160079531A1

公开(公告)日：2016-03-17

申请号：US14948893

申请日：2015-11-23

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jun Liu ,  Kristy A. Campbell

IPC: H01L45/00

CPC classification number: H01L45/1675 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  Y10S977/773

Abstract: A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.

公开(公告)号：US20160078912A1

公开(公告)日：2016-03-17

申请号：US14947978

申请日：2015-11-20

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Steve Kramer ,  Gurtej Sandhu

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.

公开(公告)号：US09276207B2

公开(公告)日：2016-03-01

申请号：US14620974

申请日：2015-02-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jun Liu ,  Jian Li

IPC: G11C11/00 ,  H01L45/00 ,  G11C13/00

CPC classification number: H01L45/06 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/008 ,  G11C2213/52 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141

Abstract: A memory device, comprising: a phase change material; and an electrode configured to heat the phase change material to change a state of the phase change material, the electrode comprising a material having a positive temperature coefficient of resistance, wherein the electrode has a narrow wall-type shape comprising a broad vertical face and a narrow vertical edge that is narrower than the broad vertical face.

Abstract translation: 一种存储器件，包括：相变材料; 以及电极，被配置为加热所述相变材料以改变所述相变材料的状态，所述电极包括具有正的温度系数电阻的材料，其中所述电极具有包括宽垂直面的窄壁型形状和 狭窄的垂直边缘比宽垂直面窄。

公开(公告)号：US20160035977A1

公开(公告)日：2016-02-04

申请号：US14881630

申请日：2015-10-13

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jun Liu

IPC: H01L45/00

CPC classification number: H01L45/1691 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/144 ,  H01L45/1675

Abstract: A memory element and method of forming the same. The memory element includes a first electrode within a via in a first dielectric material. An insulating material element is positioned over and in contact with the first electrode. A phase change material is positioned over the first electrode and in contact with sidewalls of the insulating material element. The phase change material has a first surface in contact with a surface of the first electrode and a surface of the first dielectric material. A second electrode is in contact with a second surface of the phase change material, which is opposite to the first surface.

Abstract translation: 记忆元件及其形成方法。 存储元件包括在第一电介质材料中的通孔内的第一电极。 绝缘材料元件位于第一电极之上并与第一电极接触。 相变材料位于第一电极上并与绝缘材料元件的侧壁接触。 相变材料具有与第一电极的表面和第一电介质材料的表面接触的第一表面。 第二电极与相变材料的与第一表面相对的第二表面接触。

公开(公告)号：US09172040B2

公开(公告)日：2015-10-27

申请号：US14463160

申请日：2014-08-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jun Liu ,  Michael P. Violette

IPC: H01L45/00 ,  G11C13/00 ,  H01L21/02 ,  H01L23/02 ,  H01L27/24

CPC classification number: H01L45/1608 ,  G11C13/0004 ,  H01L21/02 ,  H01L23/02 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/122 ,  H01L45/144 ,  H01L45/1675 ,  H01L45/1683 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A phase change memory cell and methods of fabricating the same are presented. The memory cell includes a variable resistance region and a top and bottom electrode. The shapes of the variable resistance region and the top electrode are configured to evenly distribute a current with a generally hemispherical current density distribution around the first electrode.

Abstract translation: 提出了相变存储单元及其制造方法。 存储单元包括可变电阻区域和顶部和底部电极。 可变电阻区域和顶部电极的形状被配置为在第一电极周围均匀地分布具有大致半球形的电流密度分布的电流。

公开(公告)号：US20150235699A1

公开(公告)日：2015-08-20

申请号：US14702330

申请日：2015-05-01

Applicant: Micron Technology, Inc.

Inventor： David H. Wells ,  Jun Liu

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C5/02 ,  G11C8/10 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/003 ,  G11C13/004 ,  G11C2013/0054

Abstract: Memory devices comprise a plurality of memory cells, each memory cell including a memory element and a selection device. A plurality of first (e.g., row) address lines can be adjacent (e.g., under) a first side of at least some cells of the plurality. A plurality of second (e.g., column) address lines extend across the plurality of row address lines, each column address line being adjacent (e.g., over) a second, opposing side of at least some of the cells. Control circuitry can be configured to selectively apply a read voltage or a write voltage substantially simultaneously to the address lines. Systems including such memory devices and methods of accessing a plurality of cells at least substantially simultaneously are also disclosed.

Abstract translation: 存储器件包括多个存储器单元，每个存储器单元包括存储元件和选择器件。 多个第一（例如，行）地址线可以在多个的至少一些单元的第一侧相邻（例如，在下方）。 多个第二（例如，列）地址线跨越多个行地址线延伸，每个列地址线在至少一些单元的第二相对侧相邻（例如，在上）。 控制电路可以被配置为基本上同时向地址线施加读取电压或写入电压。 还公开了包括这种存储器件的系统和至少基本上同时访问多个单元的方法。