公开(公告)号：US10516083B2

公开(公告)日：2019-12-24

申请号：US16266717

申请日：2019-02-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A. Kim ,  Kyoung Wan Kim ,  Chang Yeon Kim

IPC: H01L33/50 ,  H01L33/40 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/46 ,  H01L23/00 ,  H01L33/32

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

公开(公告)号：US10340425B2

公开(公告)日：2019-07-02

申请号：US15816201

申请日：2017-11-17

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Min Jang ,  Chang Yeon Kim ,  Jae Hee Lim

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

Abstract: A light emitting diode including a light blocking layer is disclosed. The light emitting diode includes: a substrate including an upper surface and side surfaces; a semiconductor stack disposed under the substrate and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a light blocking layer covering the upper surface and the side surfaces of the substrate to define a light emitting surface on the upper surface of the substrate. The size of a light emitting surface of the light emitting diode can be easily controlled using the light blocking layer.

公开(公告)号：US20190164945A1

公开(公告)日：2019-05-30

申请号：US16200036

申请日：2018-11-26

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Chang Yeon Kim ,  Ho Joon Lee ,  Seong Gyu Jang ,  Chung Hoon Lee ,  Dae Sung Cho

IPC: H01L25/13 ,  H01L33/38 ,  H01L33/40 ,  H01L33/50 ,  H01L27/15 ,  H01L33/62

Abstract: A light emitting diode stack for a display includes a support substrate, a first LED stack, a second LED stack, and a third LED stack, a conductive growth substrate coupled to the second LED stack or the third LED stack, a first color filter interposed between the first and second LED stacks and transmitting light generated from the first LED stack while reflecting light generated from the second LED stack, and a second color filter interposed between the second and third LED stacks and transmitting light generated from the first and second LED stacks while reflecting light generated from the third LED stack, in which light generated from the first LED stack is emitted outside through the second LED stack, the third LED stack, and the conductive growth substrate, and light generated from the second LED stack is emitted outside through the third LED stack and the conductive growth substrate.

公开(公告)号：US10283685B2

公开(公告)日：2019-05-07

申请号：US15514492

申请日：2015-09-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Yeon Kim ,  Ju Yong Park ,  Sung Su Son

IPC: H01L33/62 ,  H01L23/00 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/64 ,  H01L33/48

Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

公开(公告)号：US10217912B2

公开(公告)日：2019-02-26

申请号：US15823325

申请日：2017-11-27

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim ,  Kyoung Wan Kim ,  Chang Yeon Kim

IPC: H01L33/50 ,  H01L33/40 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/46 ,  H01L33/32

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

公开(公告)号：US20190044027A1

公开(公告)日：2019-02-07

申请号：US15872900

申请日：2018-01-16

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mi Hee Lee ,  Chang Yeon Kim ,  Ju Yong Park ,  Jong Kyun You ,  Joon Hee Lee

IPC: H01L33/20 ,  H01L33/10 ,  H01L33/32

Abstract: Disclosed herein is a vertical type light emitting diode having a mesa including a groove. The light emitting diode includes: a support substrate; a first conductivity type semiconductor layer disposed on the support substrate; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer through the second conductivity type semiconductor layer and the active layer; a first electrode disposed between the second conductivity type semiconductor layer and the support substrate and including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

公开(公告)号：US20180204991A1

公开(公告)日：2018-07-19

申请号：US15854631

申请日：2017-12-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Yeon Kim ,  Ju Yong Park ,  Sung Su Son

IPC: H01L33/62 ,  H01L23/00 ,  H01L33/00 ,  H01L33/06 ,  H01L33/50 ,  H01L33/38 ,  H01L33/64 ,  H01L33/46 ,  H01L33/32 ,  H01L33/48

Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

公开(公告)号：US09831401B2

公开(公告)日：2017-11-28

申请号：US15377731

申请日：2016-12-13

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim ,  Kyoung Wan Kim ,  Chang Yeon Kim

IPC: H01L33/50 ,  H01L33/62

CPC classification number: H01L33/508 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

公开(公告)号：US20170148968A1

公开(公告)日：2017-05-25

申请号：US15427802

申请日：2017-02-08

Applicant: Seoul Viosys Co., Ltd.

Inventor： So Ra Lee ,  Chang Yeon Kim ,  Ju Yong Park ,  Sung Su Son

IPC: H01L33/64 ,  H01L33/20 ,  H01L33/38 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/642 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62

Abstract: Disclosed herein is a light emitting device. The light emitting device is provided to include a light emitting structure, a first electrode pad, a second electrode pad and a heat dissipation pad, and a substrate on which the light emitting diode is mounted. The substrate includes a base; an insulation pattern formed on the base; and a conductive pattern disposed on the insulation pattern. The base includes a post and a groove separating the post from the conductive pattern. An upper surface of the post is placed lower than an upper surface of the conductive pattern, the heat dissipation pad contacts the upper surface of the post, and the first electrode pad and the second electrode pad contact the conductive pattern. With this structure, the light emitting device has excellent properties in terms of electrical stability and heat dissipation efficiency.

公开(公告)号：US09653018B2

公开(公告)日：2017-05-16

申请号：US14715341

申请日：2015-05-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Chang Yeon Kim ,  Tae Hyuk Im ,  Young Wug Kim

IPC: H05B37/02 ,  G09G3/32 ,  H05B33/08

CPC classification number: G09G3/32 ,  H05B33/0815 ,  Y02B20/346

Abstract: A light-emitting diode driving device enabling an excellent heat-dissipation function and high-efficient driving is disclosed. The disclosed LED driving device comprises: a power source unit providing an alternate current voltage; a rectification unit communicatively coupled to the power source and rectifying the alternate current voltage; a driving signal generation unit configured to receive the rectified voltage from the rectification unit and generate a primary driving signal by using the rectified voltage; and an LED driving signal modulation unit communicatively coupled to the driving signal generator, the LED driving signal modulation unit configured to receive the primary driving signal and generating a secondary pulse driving signal by modulating the primary driving signal, and LED groups including LEDs and configured to receive the primary driving signal or the second pulse driving signal such that the LED groups operate responsive to the primary driving signal or the secondary pulse driving signal.