公开(公告)号：US20060281323A1

公开(公告)日：2006-12-14

申请号：US10555668

申请日：2004-04-22

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： H01L21/302

CPC分类号： C23C16/4405 ,  H01J37/32192 ,  H01J2237/335

摘要： A method for cleaning a microwave plasma processing apparatus is disclosed wherein a cleaning gas is introduced and then excited with microwave plasma (step 3). By applying high-frequency power to a substrate supporting stage by which a substrate to be processed is supported (step 4), the etching rate is improved, thereby shortening the cleaning time.

摘要翻译： 公开了一种清洁微波等离子体处理装置的方法，其中引入清洁气体，然后用微波等离子体激发（步骤3）。 通过对被处理基板的基板支撑台施加高频电力（步骤4），能够提高蚀刻速度，缩短清洗时间。

公开(公告)号：US07120556B2

公开(公告)日：2006-10-10

申请号：US10887795

申请日：2004-07-09

申请人： Akira Nakano ,  Tadahiro Ohmi

发明人： Akira Nakano ,  Tadahiro Ohmi

IPC分类号： G06F19/00

CPC分类号： H01J37/32082 ,  H01J37/32935

摘要： The performance of a plasma processing apparatus which is disassembled, transferred, and reassembled is evaluated. The plasma processing apparatus has a plasma processing chamber having an electrode for exciting a plasma, a radiofrequency generator connected to the electrode, and an impedance matching circuit for performing the impedance matching between the plasma processing chamber and the radiofrequency generator. The performance of the apparatus is evaluated whether or not three times the first series resonant frequency of the plasma processing chamber is larger than the power frequency supplied to the plasma processing chamber.

公开(公告)号：US20060216948A1

公开(公告)日：2006-09-28

申请号：US10547504

申请日：2004-03-04

申请人： Tadahiro Ohmi ,  Akinobu Teramoto

发明人： Tadahiro Ohmi ,  Akinobu Teramoto

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02052 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/67161 ,  H01L21/67173

摘要： An object of the present invention is to completely remove water adhering to a substrate due to cleaning and carry the substrate with the water being removed, to a film forming unit. The present invention is a substrate processing system including: a cleaning unit for cleaning a substrate with a cleaning solution; a water removing unit for removing water adhering to the substrate cleaned in the cleaning unit; and a carrier section for carrying the substrate from which water has been removed in the water removing unit to another substrate processing unit through a dry atmosphere.

摘要翻译： 本发明的一个目的是完全去除由于清洗而附着在基材上的水，并且将被除去的水携带在基板上的成膜单元。 本发明是一种基板处理系统，包括：用清洗液清洗基板的清洗单元; 除水单元，用于去除在清洁单元中清洁的粘附到基底上的水; 以及承载部，其通过干燥气氛将去除水分中的水从基板移出到另一基板处理单元。

公开(公告)号：US20060180840A1

公开(公告)日：2006-08-17

申请号：US10560397

申请日：2004-06-11

申请人： Takefumi Nishimuta ,  Hiroshi Miyagi ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto

发明人： Takefumi Nishimuta ,  Hiroshi Miyagi ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto

IPC分类号： H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L29/66787 ,  H01L21/823807 ,  H01L21/82385 ,  H01L27/092

摘要： A rectangular parallelepiped projecting portion (21) having a height of HB and a width of WB is formed on a silicon substrate, and a gate oxide film is formed on a part of the top surface and the side surface of the projecting portion (21), thereby generating a MOS transistor. By connecting in parallel a p-channel MOS transistor and an n-channel MOS transistor produced as described above, a switch of a switched capacitor circuit is configured, thereby reducing a leak current and a DC offset of the switched capacitor circuit.

摘要翻译： 在硅衬底上形成具有H B高度和W B B的宽度的长方体的突出部分（21），并且栅极氧化膜形成在 突出部分（21）的顶表面和侧表面的一部分，从而产生MOS晶体管。 通过并联连接如上所述制造的p沟道MOS晶体管和n沟道MOS晶体管，构造开关电容器电路的开关，从而减小开关电容器电路的漏电流和DC偏移。

公开(公告)号：US07085628B2

公开(公告)日：2006-08-01

申请号：US10476973

申请日：2002-11-22

申请人： Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama

发明人： Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama

IPC分类号： G06D23/00

CPC分类号： G05D7/0635 ,  G01D3/022 ,  G01F1/50 ,  G01F15/046 ,  G01L9/025

摘要： A pressure sensor, a pressure control apparatus, and a flow rate control apparatus are provided to automatically correct temperature drift of the pressure sensor and accurately detect pressure despite changes in temperature. An embodiment includes an upstream side pressure sensor between an orifice and a control valve, to control flow rate through the orifice by a regulating control valve, while calculating the flow from the upstream side pressure. With a temperature sensor, a memory means, and a temperature drift correcting means which calculates drift of the upstream side pressure sensor from data in the memory means when the temperature of the fluid changes and offsets the output drift of the upstream side pressure sensor with the calculated amount of the output drift, temperature drift of the pressure sensor is automatically corrected, enabling accurate control of flow rate.

摘要翻译： 提供压力传感器，压力控制装置和流量控制装置来自动校正压力传感器的温度漂移并且尽管温度变化来精确地检测压力。 一个实施例包括在孔口和控制阀之间的上游侧压力传感器，用于通过调节控制阀控制通过孔口的流量，同时计算从上游侧压力的流量。 利用温度传感器，存储装置和温度漂移校正装置，当流体的温度变化时，上游侧压力传感器的输出漂移与 输出漂移的计算量，压力传感器的温度漂移自动校正，可以精确控制流量。

公开(公告)号：US20060071192A1

公开(公告)日：2006-04-06

申请号：US10545672

申请日：2004-02-09

申请人： Tadahiro Ohmi ,  Nobukazu Ikeda ,  Michio Yamaji ,  Masafumi Kitano ,  Akhiro Morimoto

发明人： Tadahiro Ohmi ,  Nobukazu Ikeda ,  Michio Yamaji ,  Masafumi Kitano ,  Akhiro Morimoto

IPC分类号： F16K1/00

CPC分类号： F16K7/14 ,  F16K27/003 ,  F16K51/02

摘要： The present invention provides a valve which makes it possible to reduce the diameter of the vacuum exhaustion pipings for making the facility for the vacuum exhaustion system small, as a result lowering the costs, and making the vacuum exhaustion time short, and also which can prevent the corrosions, cloggings, and seal leakages inside the piping system caused by the accumulation of substances produced by the decomposition of the gas. Specifically, the aluminum passivation is applied on the piping parts, i.e. the valve and others, used in the vacuum exhaustion system to inhibit the gas decomposition caused by the temperature rise at the time of the baking so that components for the reduction in the diameter size in the vacuum exhaustion system are provided. The corrosions, cloggings and seat leakages caused by the gas decomposition are prevented.

公开(公告)号：US07012311B2

公开(公告)日：2006-03-14

申请号：US09866576

申请日：2001-05-29

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Katsuyuki Sekine ,  Yuji Saito

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Katsuyuki Sekine ,  Yuji Saito

IPC分类号： H01L29/94

CPC分类号： H01L21/28185 ,  G11C11/16 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28238 ,  H01L21/28291 ,  H01L27/11521 ,  H01L27/11585 ,  H01L27/1159 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7833 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/7883

摘要： A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.

摘要翻译： 半导体器件包括在（111）表面附近具有晶体表面的Si晶体和形成在所述晶体表面上的绝缘膜，所述绝缘膜的至少一部分包括含有Kr或Si氮化物的Si氧化物膜 含Ar或Kr的薄膜。

公开(公告)号：US07000419B1

公开(公告)日：2006-02-21

申请号：US10070579

申请日：2000-09-11

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Masaki Hirayama ,  Hideo Hanaoka ,  Takeshi Honma ,  Hirokazu Suzuki ,  Yoshio Yamazaki ,  Yoshinori Ohkubo

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Masaki Hirayama ,  Hideo Hanaoka ,  Takeshi Honma ,  Hirokazu Suzuki ,  Yoshio Yamazaki ,  Yoshinori Ohkubo

IPC分类号： F24F3/16 ,  F25D2/10

CPC分类号： F24F13/222 ,  F24F11/41 ,  F25D21/14

摘要： The present invention has an object to comprise an apparatus for high efficiency gas temperature and humidity adjustment and an adjustment method allowing to elevate the heat exchange efficiency of a cooling coil, reduce the cooling water quantity, lower also the pipe arrangement diameter and water supply pump power, making possible to cut the initial cost and running cost of the air-conditioning system.The apparatus for high efficiency gas temperature and humidity adjustment is characterized by that means for removing condensate water deposited on the cooling coil.

摘要翻译： 本发明的目的是提供一种用于高效率气体温度和湿度调节的装置和一种允许提高冷却盘管的热交换效率的调节方法，降低冷却水量，降低管道排放直径和供水泵 电力，有可能降低空调系统的初始成本和运行成本。

公开(公告)号：US20060017101A1

公开(公告)日：2006-01-26

申请号：US11182026

申请日：2005-07-15

申请人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

发明人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

IPC分类号： H01L29/76

CPC分类号： H01L27/12 ,  H01L21/8221 ,  H01L27/0688 ,  Y10S257/903

摘要： There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

摘要翻译： 提供电路面积小，布线长度短的小型半导体集成电路。 半导体集成电路构造为多层结构，并且设置有第一半导体层，形成在第一半导体层中的第一半导体层晶体管，布置在第一半导体层上并且其中金属线为 形成，沉积在布线层上的第二半导体层和形成在第二半导体层中的第二半导体层晶体管。 注意，第一半导体层晶体管的栅极绝缘膜的绝缘几乎等于第二半导体层晶体管的栅极绝缘膜的绝缘，并且通过自由基氧化形成第二半导体层晶体管的栅极绝缘膜 或自由基氮化。

公开(公告)号：US06964279B2

公开(公告)日：2005-11-15

申请号：US10469151

申请日：2002-11-22

申请人： Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama ,  Shujiro Inui ,  Taiji Sakai ,  Masanori Ueyama

发明人： Tadahiro Ohmi ,  Tomio Uno ,  Osamu Nakamura ,  Nobukazu Ikeda ,  Ryousuke Dohi ,  Kouji Nishino ,  Atsushi Matsumoto ,  Kazuhiko Sugiyama ,  Shujiro Inui ,  Taiji Sakai ,  Masanori Ueyama

IPC分类号： G01F1/00 ,  G01F1/36 ,  G01F1/42 ,  G05D7/06

CPC分类号： G05D7/0635 ,  Y10T137/7759 ,  Y10T137/7761

摘要： A pressure-type flow rate control apparatus controls the flow rate of fluid passing through an orifice to a target flow rate. The flow rate of a compressible fluid under non-critical conditions (sub-sonic) passing through the orifice is calculated by: Qc=KP2m(P1−P2)n so that the flow rate can be controlled to the target flow rate with high precision and speed. Also provided is an improved pressure-type flow rate control apparatus in which a pressure ratio P2/P1=r, obtained from an upstream pressure P1 and a downstream pressure P2 is constantly compared with a critical value r, and under critical conditions (r≦rc), the flow rate is calculated by: Qc=KP1. Under non-critical conditions (r>rc), the flow rate is calculated by Qc=KP2m(P1−P2)n.

摘要翻译： 压力式流量控制装置将通过孔口的流体的流量控制为目标流量。 通过孔口的非临界条件（亚音）的可压缩流体的流量通过以下公式计算：<？in-line-formula description =“In-line Formulas”end =“lead”？> Qc = KP （P 1→P 2） -formulae description =“在线公式”end =“tail”？>，可以以高精度和高速度将流量控制在目标流量上。 还提供了一种改进的压力型流量控制装置，其中从上游压力P 1获得的压力比P 2 / P 1 / / SUB>和下游压力P 2 2不断与临界值r进行比较，在临界条件（r≤Rc c）下，流量由下式计算： ：<？in-line-formula description =“In-line Formulas”end =“lead”？> Qc = KP <1> <？in-line-formula description =“In-line Formulas” end =“tail”？>在非关键条件下（r> r> c ），流量通过Qc = KP 2 / （P 1→P 2）。