公开(公告)号：US20120292650A1

公开(公告)日：2012-11-22

申请号：US13220072

申请日：2011-08-29

Applicant: Naoharu SUGIYAMA ,  Tomonari Shioda ,  Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Naoharu SUGIYAMA ,  Tomonari Shioda ,  Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L33/24 ,  H01L33/26 ,  H01L33/00

CPC classification number: H01L33/007 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.

Abstract translation: 根据一个实施例，半导体发光器件包括n型层，发光层，p型层和透明电极。 n型层包括氮化物半导体，其厚度不大于500nm。 发光层设置在n型层上。 p型层设置在发光层上，并且包括氮化物半导体。 透明电极与n型层接触。 n型层设置在透明电极和发光层之间。

公开(公告)号：US20120292632A1

公开(公告)日：2012-11-22

申请号：US13222561

申请日：2011-08-31

Applicant: Tomonari SHIODA ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Tomonari SHIODA ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L33/32 ,  H01L21/20 ,  H01L29/20

CPC classification number: H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

Abstract: According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

Abstract translation: 根据一个实施例，氮化物半导体器件包括基底层和功能层。 基底层形成在形成在硅衬底上的含Al氮化物半导体层上。 基础层的厚度不小于1微米，包括GaN。 功能层设置在基础层上。 功能层包括第一半导体层。 第一半导体层的杂质浓度高于基础层中的杂质浓度，并且包括第一导电类型的GaN。

公开(公告)号：US20120286237A1

公开(公告)日：2012-11-15

申请号：US13222185

申请日：2011-08-31

Applicant: Hajime Nago ,  Koichi Tachibana ,  Shigeya Kimura ,  Takahiro Sato ,  Taisuke Sato ,  Toshihide Ito ,  Shinya Nunoue

Inventor： Hajime Nago ,  Koichi Tachibana ,  Shigeya Kimura ,  Takahiro Sato ,  Taisuke Sato ,  Toshihide Ito ,  Shinya Nunoue

IPC: H01L33/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/325 ,  H01S5/34333 ,  H01S2304/04

Abstract: According to one embodiment, a semiconductor light emitting device includes: an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting part includes: a plurality of well layers including Inx1Ga1-x1N (0

Abstract translation: 根据一个实施例，半导体发光器件包括：n型半导体层，p型半导体层和发光部分。 发光部分设置在n型半导体层和p型半导体层之间。 发光部分包括：包括In x Ga 1-x1 N（0

公开(公告)号：US08310145B2

公开(公告)日：2012-11-13

申请号：US13034120

申请日：2011-02-24

Applicant: Iwao Mitsuishi ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

Inventor： Iwao Mitsuishi ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

IPC: H01J1/62 ,  H01L33/50

CPC classification number: C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.

Abstract translation: 根据一个实施例的发光器件包括发射波长为380nm至470nm的光的发光元件; 设置在发光元件上的CASN第一红色荧光体; 设置在发光元件上的赛隆第二红色磷光体; 以及设置在发光元件上的赛隆绿荧光体。

公开(公告)号：US20120199811A1

公开(公告)日：2012-08-09

申请号：US13450063

申请日：2012-04-18

Applicant: Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/06

CPC classification number: H01L33/22 ,  H01L33/04 ,  H01L33/06

Abstract: Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.

Abstract translation: 某些实施例提供一种半导体发光器件，包括：第一金属层; 包括p型氮化物半导体层，有源层和n型氮化物半导体层的堆叠膜; n电极; 第二金属层; 以及保护膜，其保护所述n型氮化物半导体层的上表面的外周区域，所述堆叠膜的侧面，所述第二金属层的上表面的区域除了与所述p型膜接触的区域之外， 氮化物半导体层以及与第二金属层接触的区域以外的第一金属层的上表面的区域。 在n型氮化物半导体层的上表面的区域形成凹凸，该区域位于设置有n电极的区域的外部，并且覆盖有保护膜的区域之外。

公开(公告)号：US20120138985A1

公开(公告)日：2012-06-07

申请号：US13208658

申请日：2011-08-12

Applicant: Hiroshi ONO ,  Toshiki HIKOSAKA ,  Tomoko MORIOKA ,  Toshiyuki OKA ,  Shinya NUNOUE

Inventor： Hiroshi ONO ,  Toshiki HIKOSAKA ,  Tomoko MORIOKA ,  Toshiyuki OKA ,  Shinya NUNOUE

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.

Abstract translation: 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层和发光部分。 第一半导体层包括n型半导体层。 第二半导体层包括p型半导体层。 发光部分设置在第一半导体层和第二半导体层之间，并且包括多个势垒层和设置在多个势垒层之间的阱层。 第一半导体层具有第一不规则性和第二不规则性。 第一不规则性设置在第一半导体层的与发光部相反的一侧的第一主表面上。 第二不规则性设置在第一凹凸的底面和顶面上，并且具有小于底面与顶面之间的水平差的水平差。

公开(公告)号：US20120132940A1

公开(公告)日：2012-05-31

申请号：US13214690

申请日：2011-08-22

Applicant: Tomonari Shioda ,  Hisashi Yoshida ,  Koichi Tachibana ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Tomonari Shioda ,  Hisashi Yoshida ,  Koichi Tachibana ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L33/32

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer.

Abstract translation: 根据一个实施例，光学半导体器件包括n型半导体层，p型半导体层和功能部件。 功能部件设置在n型半导体层和p型半导体层之间。 功能部件包括在从n型半导体层朝向p型半导体层的方向上堆叠的多个有源层。 至少两个有源层包括多层堆叠体，n侧阻挡层，阱层和p侧势垒层。 多层堆叠体包括沿该方向交替堆叠的多个厚膜层和多个薄膜层。 n侧阻挡层设置在多层叠层体和p型层之间。 阱层设置在n侧阻挡层和p型层之间。 p侧阻挡层设置在阱层和p型层之间。

公开(公告)号：US20120062106A1

公开(公告)日：2012-03-15

申请号：US13221042

申请日：2011-08-30

Applicant: Aoi OKADA ,  Yumi Fukuda ,  Naotoshi Matsuda ,  Iwao Mitsuishi ,  Shinya Nunoue ,  Keiko Albessard ,  Masahiro Kato

Inventor： Aoi OKADA ,  Yumi Fukuda ,  Naotoshi Matsuda ,  Iwao Mitsuishi ,  Shinya Nunoue ,  Keiko Albessard ,  Masahiro Kato

IPC: H01J1/63 ,  C09K11/78

CPC classification number: C09K11/7734 ,  C09K11/0883 ,  C09K11/7728 ,  F21K9/64 ,  H01L33/502 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  Y02B20/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): (M1-xECx)aM1bAlOcNd   (1). In the formula (1), M is an element selected from the group consisting of IA group elements, IIA group elements, IIIA group elements, IIIB group elements, rare earth elements and IVA group elements; EC is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; M1 is different from M and is selected from the group consisting of tetravalent elements; and x, a, b, c and d are numbers satisfying the conditions of 0

Abstract translation: 本实施方案提供由下式（1）表示的红色发光荧光物质：（M1-xECx）aM1bAlOcNd（1）。 在式（1）中，M是选自IA族元素，IIA族元素，IIIA族元素，IIIB族元素，稀土元素和IVA族元素的元素; EC是选自Eu，Ce，Mn，Tb，Yb，Dy，Sm，Tm，Pr，Nd，Pm，Ho，Er，Cr，Sn，Cu，Zn，As，Ag，Cd， Sb，Au，Hg，Tl，Pb，Bi和Fe; M1与M不同，选自四价元素; 并且x，a，b，c和d分别是满足0

公开(公告)号：US20120056527A1

公开(公告)日：2012-03-08

申请号：US13034137

申请日：2011-02-24

Applicant: Iwao MITSUISHI ,  Kunio ISHIDA ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Keiko ALBESSARD ,  Shinya NUNOUE

Inventor： Iwao MITSUISHI ,  Kunio ISHIDA ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Keiko ALBESSARD ,  Shinya NUNOUE

IPC: H01J1/62

CPC classification number: C09K11/7734 ,  C09K11/7728 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device according to one embodiment includes a board; a light emitting element mounted on the board, emitting light having a wavelength of 250 nm to 500 nm; a red fluorescent layer formed on the element, including a red phosphor expressed by equation (1), having a semicircular shape with a diameter r; (M1−x1Eux1)aSibAlOcNd  (1) (In the equation (1), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al (Aliminum), rare-earth elements, and IVB group elements),an intermediate layer formed on the red fluorescent layer, being made of transparent resin, having a semicircular shape with a diameter D; and a green fluorescent layer formed on the intermediate layer, including a green phosphor, having a semicircular shape. A relationship between the diameter r and the diameter D satisfies equation (2): 2.0r (μm)≧D(r+1000) (μm).  (2)

Abstract translation: 根据一个实施例的发光器件包括板; 安装在所述板上的发光元件，发射波长为250nm至500nm的光; 形成在元件上的红色荧光层，包括由等式（1）表示的具有直径为r的半圆形形状的红色荧光体; （M1-x1Eux1）aSibAlOcNd（1）（在式（1）中，M是选自IA族元素，IIA族元素，IIIA族元素，Al（Aliminum）以外的IIIB族元素，稀土元素 和IVB族元素），形成在红色荧光层上的由透明树脂制成的具有直径D的半圆形状的中间层; 以及形成在具有半圆形状的绿色荧光体的中间层上形成的绿色荧光体层。 直径r和直径D之间的关系满足式（2）：2.0r（μm）≥D（r + 1000）（μm）。 （2）

公开(公告)号：US20120056525A1

公开(公告)日：2012-03-08

申请号：US13033911

申请日：2011-02-24

Applicant: Kunio ISHIDA ,  Iwao MITSUISHI ,  Ryosuke HIRAMATSU ,  Yumi FUKUDA ,  Keiko ALBESSARD ,  Naotoshi MATSUDA ,  Aoi OKADA ,  Shinya NUNOUE

Inventor： Kunio ISHIDA ,  Iwao MITSUISHI ,  Ryosuke HIRAMATSU ,  Yumi FUKUDA ,  Keiko ALBESSARD ,  Naotoshi MATSUDA ,  Aoi OKADA ,  Shinya NUNOUE

IPC: H01J1/63 ,  H01J1/62

CPC classification number: H05B33/14 ,  H01L33/20 ,  H01L33/504 ,  H01L33/508

Abstract: A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm; plural red fluorescent layers that are formed above the light emitting element to include a red fluorescent material, the red fluorescent layers being disposed at predetermined intervals; and plural green fluorescent layers that are formed above the light emitting element to include a green fluorescent material, a distance between the light emitting element and the green fluorescent layers being larger than a distance between the light emitting element and the red fluorescent layers.

Abstract translation: 根据一个实施例的发光器件包括发射波长为250nm至500nm的光的发光元件; 多个红色荧光层，其形成在发光元件上方以包括红色荧光材料，红色荧光层以预定间隔设置; 以及形成在发光元件上方以包括绿色荧光材料的多个绿色荧光层，发光元件和绿色荧光层之间的距离大于发光元件和红色荧光层之间的距离。