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    TRANSPARENT ULTRAVIOLET PHOTODETECTOR
    143.
    发明申请
    TRANSPARENT ULTRAVIOLET PHOTODETECTOR 审中-公开

    公开(公告)号：US20200035850A1

    公开(公告)日：2020-01-30

    申请号：US16590912

    申请日：2019-10-02

    Applicant: International Business Machines Corporation

    Inventor： Damon Farmer ,  Shu-Jen Han

    IPC: H01L31/101 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0352 ,  H01L31/0224

    Abstract: A method of fabricating a visibly transparent, ultraviolet (UV) photodetector is provided. The method includes laying a first electrode onto a substrate surface, the first electrode being formed of a carbon-based, single-layer material. A block is patterned over an end of the first electrode and portions of the substrate surface. The block is formed of a visibly transparent material that is able to be deposited into the block at 75° C.-125° C. In addition, the method includes masking a section of the block and exposed sections of the first electrode. A second electrode is laid onto an unmasked section of the block with an end of the second electrode laid onto the substrate surface. The second electrode is formed of the carbon-based, single-layer material.

    IN-CELL DIFFERENTIAL READ-OUT CIRCUITRY FOR READING SIGNED WEIGHT VALUES IN RESISTIVE PROCESSING UNIT ARCHITECTURE
    144.
    发明申请
    IN-CELL DIFFERENTIAL READ-OUT CIRCUITRY FOR READING SIGNED WEIGHT VALUES IN RESISTIVE PROCESSING UNIT ARCHITECTURE 审中-公开

    公开(公告)号：US20190304538A1

    公开(公告)日：2019-10-03

    申请号：US16352230

    申请日：2019-03-13

    Applicant: International Business Machines Corporation

    Inventor： Seyoung Kim ,  Hyung-Min Lee ,  Tayfun Gokmen ,  Shu-Jen Han

    IPC: G11C13/00 ,  G06N3/063 ,  G06N3/08

    Abstract: A resistive processing unit (RPU) device includes a weight storage device to store a weight voltage which corresponds to a weight value of the RPU device, and a read transistor having a gate connected to the weight storage device, and first and second source/drain terminals connected to first and second control ports, respectively. A current source connected to the second source/drain terminal generates a fixed reference current. The read transistor generates a weight current in response to the weight voltage. A read current output from the second control port represents a signed weight value of the RPU device. A magnitude of the read current is equal to a difference between the weight current and the fixed reference current. The sign of the read current is positive when the weight current is greater than the fixed reference current, and negative when the weight current is less than the fixed reference current.

    Self-assembly of nanostructures
    147.
    发明授权
    Self-assembly of nanostructures 有权

    公开(公告)号：US10367145B2

    公开(公告)日：2019-07-30

    申请号：US15488751

    申请日：2017-04-17

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Shu-Jen Han ,  Bharat Kumar ,  George S. Tulevski

    IPC: H01L51/00 ,  C07F9/38 ,  H01L21/02 ,  C01B32/174 ,  C01B32/16 ,  C01B32/168

    Abstract: Structures and methods that include selective electrostatic placement based on a dipole-to-dipole interaction of electron-rich carbon nanotubes onto an electron-deficient pre-patterned surface. The structure includes a substrate with a first surface having a first isoelectric point and at least one additional surface having a second isoelectric point. A self-assembled monolayer is selectively formed on the first surface and includes an electron deficient compound including a deprotonated pendant hydroxamic acid or a pendant phosphonic acid group or a pendant catechol group bound to the first surface. An organic solvent can be used to deposit the electron rich carbon nanotubes on the self-assembled monolayer.

    Placement of carbon nanotube guided by DSA patterning
    149.
    发明授权
    Placement of carbon nanotube guided by DSA patterning 有权

    公开(公告)号：US10243156B2

    公开(公告)日：2019-03-26

    申请号：US15461175

    申请日：2017-03-16

    Applicant: International Business Machines Corporation

    Inventor： Ali Afzali-Ardakani ,  Sarunya Bangsaruntip ,  Shu-Jen Han ,  HsinYu Tsai

    IPC: H01L29/04 ,  H01L51/05 ,  H01L51/00

    Abstract: In one aspect, a method for placing carbon nanotubes on a dielectric includes: using DSA of a block copolymer to create a pattern in the placement guide layer on the dielectric which includes multiple trenches in the placement guide layer, wherein there is a first charge on sidewall and top surfaces of the trenches and a second charge on bottom surfaces of the trenches, and wherein the first charge is different from the second charge; and depositing a carbon nanotube solution onto the dielectric, wherein self-assembly of the deposited carbon nanotubes within the trenches occurs based on i) attractive forces between the first charge on the surfaces of the carbon nanotubes and the second charge on the bottom surfaces of the trenches and ii) repulsive forces between the first charge on the surfaces of the carbon nanotubes and the first charge on sidewall and top surfaces of the trenches.

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