公开(公告)号：US20200020810A1

公开(公告)日：2020-01-16

申请号：US16582225

申请日：2019-09-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1339 ,  G02F1/1335 ,  G02F1/1333 ,  H01L29/45 ,  H01L29/10

Abstract: To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.

公开(公告)号：US20190341502A1

公开(公告)日：2019-11-07

申请号：US16515283

申请日：2019-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/32 ,  H01L29/10 ,  H01L21/465 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66 ,  H01L29/06 ,  H01L29/24 ,  G02F1/1362 ,  H01L29/423 ,  H01L29/04 ,  H01L21/306

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20190280020A1

公开(公告)日：2019-09-12

申请号：US16420858

申请日：2019-05-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masayuki SAKAKURA ,  Motoki NAKASHIMA

IPC: H01L27/12 ,  H01L29/786

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

公开(公告)号：US20190103497A1

公开(公告)日：2019-04-04

申请号：US16194664

申请日：2018-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66 ,  G02F1/1368 ,  G02F1/1333 ,  H01L27/32

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.

公开(公告)号：US20180247990A1

公开(公告)日：2018-08-30

申请号：US15966640

申请日：2018-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro JINBO ,  Kohei YOKOYAMA ,  Yuki TAMATSUKURI ,  Naoto GOTO ,  Masami JINTYOU ,  Masayoshi DOBASHI ,  Masataka NAKADA ,  Akihiro CHIDA ,  Naoyuki SENDA

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3258 ,  H01L51/5253 ,  H01L2251/301 ,  H01L2251/5338

Abstract: To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

公开(公告)号：US20180012912A1

公开(公告)日：2018-01-11

申请号：US15697627

申请日：2017-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Takashi HAMOCHI ,  Satoshi HIGANO ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI

IPC: H01L27/12 ,  H01L49/02 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L27/1255 ,  H01L28/20 ,  H01L28/24 ,  H01L28/60 ,  H01L29/45 ,  H01L29/7869 ,  H01L29/78693

Abstract: A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).

公开(公告)号：US20170271378A1

公开(公告)日：2017-09-21

申请号：US15451540

申请日：2017-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Hiroyuki MIYAKE ,  Kengo AKIMOTO ,  Masami JINTYOU ,  Takahiro IGUCHI

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L27/1229 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device with a reduced layout area of transistors is provided. The semiconductor device includes a first transistor including a first oxide semiconductor film and a second transistor including a second oxide semiconductor film over a substrate. When the oxide semiconductor films are subjected to electron diffraction, the ratio of the integrated intensity of luminance of a diffraction spot derived from c-axis alignment to the integrated intensity of luminance of a diffraction spot derived from alignment in any direction in the first oxide semiconductor film is higher than that in the second oxide semiconductor film. In addition, part of the first transistor is located between the second transistor and the substrate.

公开(公告)号：US20170263654A1

公开(公告)日：2017-09-14

申请号：US15601330

申请日：2017-05-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke KUBOTA ,  Ryo HATSUMI ,  Masami JINTYOU ,  Takumi SHIGENOBU ,  Naoto GOTO

IPC: H01L27/12 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/041 ,  G06F3/044 ,  H01L29/24 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786 ,  H01L49/02

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

公开(公告)号：US20170236845A1

公开(公告)日：2017-08-17

申请号：US15582887

申请日：2017-05-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Takahiro IGUCHI

IPC: H01L27/12 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78696

Abstract: A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device including an oxide semiconductor. The semiconductor device including an oxide semiconductor film includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a third insulating film over the second insulating film. The second insulating film includes oxygen and silicon, the third insulating film includes nitrogen and silicon, and indium is included in a vicinity of an interface between the second insulating film and the third insulating film.

公开(公告)号：US20170222057A1

公开(公告)日：2017-08-03

申请号：US15490433

申请日：2017-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/49 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78696

Abstract: A self-aligned transistor including an oxide semiconductor film, which has excellent and stable electrical characteristics, is provided. A semiconductor device is provided with a transistor that includes an oxide semiconductor film, a gate electrode overlapping with part of the oxide semiconductor film, and a gate insulating film between the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a first region and second regions between which the first region is positioned. The second regions include an impurity element. A side of the gate insulating film has a depressed region. Part of the gate electrode overlaps with parts of the second regions in the oxide semiconductor film.