公开(公告)号：US06580225B2

公开(公告)日：2003-06-17

申请号：US10062037

申请日：2002-05-31

Applicant: Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

Inventor： Zvi Yaniv ,  Richard Lee Fink ,  Zhidan Li Tolt

IPC: G09G310

CPC classification number: H01J1/304 ,  B82Y10/00 ,  B82Y15/00 ,  H01J2201/30457

Abstract: A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.

公开(公告)号：US06204596B1

公开(公告)日：2001-03-20

申请号：US09107392

申请日：1998-06-30

Applicant: John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

Inventor： John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

IPC: H01J102

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/2973 ,  Y10T428/298

Abstract: An electron-emitting device contains a lower conductive region (22), a porous insulating layer (24A, 24B, 24D, 24E, or 24F) overlying the lower conductive region, and a multiplicity of electron-emissive elements (30, 30A, or 30B) situated in pores (281) extending through the porous layer. The pores are situated at locations substantially random relative to one another. The lower conductive region typically contains a highly conductive portion (22A) and an overlying highly resistive portion (22B). Alternatively or additionally, a patterned gate layer (34B, 40B, or 46B) overlies the porous layer. Openings (36, 42, or 541) corresponding to the filaments extend through the gate layer at locations generally centered on the filaments such that the filaments are separated from the gate layer.

Abstract translation: 电子发射器件包含覆盖在下导电区域上的下导电区域（22），多孔绝缘层（24A，24B，24D，24E或24F）和多个电子发射元件（30,30A或 30B）位于延伸穿过多孔层的孔（281）中。 孔位于相对于彼此基本上随机的位置。 下导电区域通常包含高导电部分（22A）和覆盖的高电阻部分（22B）。 或者或另外，图案化的栅极层（34B，40B或46B）覆盖在多孔层上。 对应于长丝的开口（36,42或541）在通常以灯丝为中心的位置处延伸穿过栅极层，使得灯丝与栅极层分离。

公开(公告)号：US06204595B1

公开(公告)日：2001-03-20

申请号：US08500282

申请日：1995-07-10

Applicant: Steven Falabella

Inventor： Steven Falabella

IPC: H01J2110

CPC classification number: H01J1/304 ,  H01J2201/30457

Abstract: An electron emitter comprising a textured silicon wafer overcoated with a thin (200 Å) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

Abstract translation: 已经证明使用这种发射体与未涂覆的或金刚石相比，包括用薄（200）氮掺杂的非晶金刚石（a：DN）层覆盖的纹理化硅晶片的电子发射器 涂覆的发射体，其中发射是接近60伏/微米的场。 硅/氮掺杂的非晶金刚石（Si / a：D-N）发射极可以通过使用经过滤的阴极弧系统在氮气气氛中用无定形金刚石（a：D）覆盖纹理硅晶片来制备。 Si / a：D-N发射极的增强性能降低了场致发射显示实用的点所需的电压。 因此，该发射极可用于例如平板发射显示器（FED）和冷阴极真空电子器件

公开(公告)号：US6127773A

公开(公告)日：2000-10-03

申请号：US868644

申请日：1997-06-04

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J1/304 ,  H01J61/067 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J61/0677 ,  H01J1/304 ,  H01J63/06 ,  H01J2201/30457 ,  H01J2329/00

Abstract: A field emission cathode for use in flat panel displays is disclosed comprising a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities. Use of the cathode to form a computer screen is also disclosed along with the use of the cathode to form a fluorescent light source.

Abstract translation: 公开了一种用于平板显示器的场发射阴极，其包括一层导电材料和一层非晶金刚石膜，其作为低有效功函数材料，沉积在导电材料上以形成发射位置。 发射部位各自含有至少两个具有不同电子亲和力的亚区域。 还公开了阴极形成计算机屏幕的使用以及阴极的使用以形成荧光光源。

公开(公告)号：US6064148A

公开(公告)日：2000-05-16

申请号：US859692

申请日：1997-05-21

Applicant: Zhidam Li Tolt ,  Zvi Yaniv ,  Richard Lee Fink

Inventor： Zhidam Li Tolt ,  Zvi Yaniv ,  Richard Lee Fink

IPC: H01J1/304 ,  H01J9/02 ,  H01J19/24

CPC classification number: H01J9/025 ,  H01J2201/30457 ,  H01J2329/00

Abstract: A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing etching of a substrate and then depositing the film. The etching step creates nucleation sites on the substrate for the film deposition process. With this process patterning of the emitting film is avoided. A field emitter device can be manufactured with such a film. A field emission device results where the cathode has a continuous film that has not been subjected to etching, and thus has superior emission properties. A pixel in the cathode includes the emitting film deposited directly on the substrate with the conductor deposited on one or more sides of the emitter film. In one embodiment the emitter is in a window formed in the conductor layer.

Abstract translation: 可以在计算机显示器内使用的用于场致发射器件的膜（碳和/或金刚石）通过利用蚀刻基底然后沉积膜的方法产生。 蚀刻步骤在用于薄膜沉积工艺的基底上产生成核位点。 通过该过程避免了发光膜的图案化。 可以制造具有这种膜的场发射器装置。 导致场致发射器件，其中阴极具有未经受蚀刻的连续膜，因此具有优异的发射性能。 阴极中的像素包括直接沉积在衬底上的发射膜，其中导体沉积在发射极膜的一个或多个侧面上。 在一个实施例中，发射器在形成在导体层中的窗口中。

公开(公告)号：US6042900A

公开(公告)日：2000-03-28

申请号：US614194

申请日：1996-03-12

Applicant: Alexander Tursonovich Rakhimov ,  Nikolay Vladislavovich Suetin ,  Mikhail Arkadievich Timofeyev ,  Valentin Akimovich Tugarev ,  Vladimir Ivanovich Rezunenko

Inventor： Alexander Tursonovich Rakhimov ,  Nikolay Vladislavovich Suetin ,  Mikhail Arkadievich Timofeyev ,  Valentin Akimovich Tugarev ,  Vladimir Ivanovich Rezunenko

IPC: C23C16/27 ,  C23C16/503 ,  C23C16/56 ,  B05D3/06 ,  C23C16/26

CPC classification number: C23C16/272 ,  C23C16/503 ,  C23C16/56 ,  H01J2201/30457

Abstract: Method is provided for forming CVD nano diamond films for use as cold cathodes in microelectronic devices. Conditions for forming the film outside the plasma region between the cathode and a grid anode are disclosed. Heating of the grid anode makes possible a combination of glow discharge and hot filament deposition.

Abstract translation: 提供了用于形成用于微电子器件中的冷阴极的CVD纳米金刚石膜的方法。 公开了在阴极和栅极之间的等离子体区域外形成膜的条件。 栅格阳极的加热使得辉光放电和热丝沉积的组合成为可能。

公开(公告)号：US5984752A

公开(公告)日：1999-11-16

申请号：US47131

申请日：1998-03-24

Applicant: Hiroyoshi Tanaka ,  Koichi Kotera ,  Masao Uchida

Inventor： Hiroyoshi Tanaka ,  Koichi Kotera ,  Masao Uchida

IPC: H01J1/304 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: An electron emission cathode includes: an n-type semiconductor film including diamond particles partially projecting from a surface of the n-type semiconductor film; and an anode opposing the n-type semiconductor film with a vacuum interposed therebetween. Electrons are emitted by applying a voltage between the anode and the n-type semiconductor film.

Abstract translation: 电子发射阴极包括：n型半导体膜，包括从n型半导体膜的表面部分地突出的金刚石颗粒; 以及与之间的真空相对的n型半导体膜的阳极。 通过在阳极和n型半导体膜之间施加电压来发射电子。

公开(公告)号：US5981071A

公开(公告)日：1999-11-09

申请号：US650623

申请日：1996-05-20

Applicant: Isaiah W. Cox

Inventor： Isaiah W. Cox

IPC: H01J1/30 ,  H01J19/24 ,  H01J21/04 ,  H01J1/02

CPC classification number: H01J21/04 ,  H01J1/30 ,  H01J19/24 ,  H01J2201/30457 ,  Y10T428/30

Abstract: A novel use of doped carbonaceous material is disclosed, integral to the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators. In the preferred embodiment, the use of nitrogen-doped diamond enhances the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators.

Abstract translation: 公开了掺杂碳质材料的新用途，与真空二极管热泵和真空二极管热电偶发生器的操作是一体的。 在优选实施例中，使用掺杂氮的金刚石增强了真空二极管热泵和真空二极管热电发生器的操作。

公开(公告)号：US5944573A

公开(公告)日：1999-08-31

申请号：US988046

申请日：1997-12-10

Applicant: Gerald T. Mearini ,  Robert E. Kusner

Inventor： Gerald T. Mearini ,  Robert E. Kusner

IPC: C23C16/02 ,  C23C16/27 ,  H01J9/02

CPC classification number: H01J9/025 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/271 ,  H01J2201/30457

Abstract: A process for depositing diamond crystals onto a field emission cathode. The process involves providing a cathode having a substrate, a gate layer and a plurality of emitters electrically insulated from the gate layer. An electric bias is applied to the gate layer and a ground potential is applied to the emitters. A heat source is positioned adjacent the cathode, and the cathode is exposed to a field of ions for a sufficient period to at least partially clean the emitters. A carbon containing gas is added to the atmosphere adjacent to the cathode such that carbon ions are dissociated from the gas and deposited on the emitters to form a "soot". The temperature of the cathode is then adjusted to a level which allows formation of diamond film.

Abstract translation: 将金刚石晶体沉积到场致发射阴极上的工艺。 该方法包括提供具有基板，栅极层和与栅极层电绝缘的多个发射极的阴极。 对栅极层施加电偏压，并将接地电位施加到发射极。 热源邻近阴极定位，并且阴极暴露于离子场足够的时间以至少部分地清洁发射器。 在与阴极相邻的气氛中加入含碳气体，使得碳离子与气体分离并沉积在发射体上以形成“烟灰”。 然后将阴极的温度调节至允许形成金刚石膜的水平。

公开(公告)号：US5900301A

公开(公告)日：1999-05-04

申请号：US779145

申请日：1997-01-03

Applicant: George E. Brandes ,  Jonathan C. Twichell ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

Inventor： George E. Brandes ,  Jonathan C. Twichell ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

IPC: H01J1/304 ,  H01J9/02 ,  B05D5/12

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/24124 ,  Y10T428/24198

Abstract: Fabrication of an electron-emitting device entails distributing electron-emissive carbon-containing particles (22) over a non-insulating region (12). The particles can be made electron emissive after the particle distributing step. Particle bonding material (24) is typically provided to bond the particles to the non-insulating region. The particle bonding material can include carbide formed by heating or/and can be created by modifying a layer (32) provided between the non-insulating region and the particles. In one embodiment, the particles emit electrons primarily from graphite or/and amorphous carbon regions. In another embodiment, the particles are made electron-emissive prior to the particle distributing step.

Abstract translation: 电子发射器件的制造需要在非绝缘区域（12）上分布电子发射含碳颗粒（22）。 在颗粒分布步骤之后，颗粒可以被制成电子发射。 通常提供颗粒粘合材料（24）以将颗粒结合到非绝缘区域。 粒子接合材料可以包括通过加热形成的碳化物和/或可以通过改变设置在非绝缘区域和颗粒之间的层（32）而形成的碳化物。 在一个实施方案中，颗粒主要从石墨或/和无定形碳区域发射电子。 在另一个实施方案中，颗粒在颗粒分布步骤之前被制成电子发射的。