公开(公告)号：US20230227975A1

公开(公告)日：2023-07-20

申请号：US17566026

申请日：2021-12-30

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mark Saly ,  David Thompson ,  Annamalai Lakshmanan ,  Avgerinos V. Gelatos ,  Joung Joo Lee

IPC: C23C16/455 ,  C23C16/18 ,  C07F17/02 ,  C07F17/00

CPC classification number: C23C16/45553 ,  C07F17/00 ,  C07F17/02 ,  C23C16/18 ,  C23C16/45536

Abstract: Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C1-C10 alkyl, C3-C10 cycloalkyl, C2-C10 alkenyl, or C2-C10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.

公开(公告)号：US11603767B2

公开(公告)日：2023-03-14

申请号：US17331473

申请日：2021-05-26

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly ,  David Alexander Britz ,  David Thompson

IPC: C23C16/06 ,  F01D5/28 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/30 ,  C23C16/56 ,  F01D9/02 ,  F01D25/12 ,  F01D25/28 ,  F23R3/28 ,  C07F11/00 ,  F01D25/14

Abstract: Methods for depositing protective coatings on aerospace components are provided and include sequentially exposing the aerospace component to a chromium precursor and a reactant to form a chromium-containing layer on a surface of the aerospace component by an atomic layer deposition process. The chromium-containing layer contains metallic chromium, chromium oxide, chromium nitride, chromium carbide, chromium silicide, or any combination thereof.

公开(公告)号：US20230025937A1

公开(公告)日：2023-01-26

申请号：US17955996

申请日：2022-09-29

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US11488830B2

公开(公告)日：2022-11-01

申请号：US16549756

申请日：2019-08-23

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US11332488B2

公开(公告)日：2022-05-17

申请号：US16996459

申请日：2020-08-18

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Atashi Basu ,  David Thompson ,  Nasrin Kazem

IPC: C07F15/06 ,  C23C16/455 ,  C23C16/18

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are selected from the group consisting of C4-C10 alkyl groups; and R2 and R3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in R2 and R3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US20210225655A1

公开(公告)日：2021-07-22

申请号：US17223506

申请日：2021-04-06

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  H01L21/28 ,  C23C16/06 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/34 ,  C23C16/42

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

公开(公告)号：US11028478B2

公开(公告)日：2021-06-08

申请号：US16006010

申请日：2018-06-12

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/36

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

公开(公告)号：US10985009B2

公开(公告)日：2021-04-20

申请号：US16374345

申请日：2019-04-03

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Saly ,  David Thompson ,  William John Durand ,  Kelvin Chan ,  Hanhong Chen ,  Philip Allan Kraus

IPC: H01L21/02 ,  C23C16/513 ,  C23C16/26

Abstract: Embodiments include a method for forming a carbon containing film. In an embodiment, the method comprises flowing a precursor gas into a processing chamber. For example the precursor gas comprises carbon containing molecules. In an embodiment, the method further comprises flowing a co-reactant gas into the processing chamber. In an embodiment, the method further comprises striking a plasma in the processing chamber. In an embodiment plasma activated co-reactant molecules initiate polymerization of the carbon containing molecules in the precursor gas. Embodiments may also include a method that further comprises depositing a carbon containing film onto a substrate in the processing chamber.

公开(公告)号：US10724135B2

公开(公告)日：2020-07-28

申请号：US15909352

申请日：2018-03-01

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/02 ,  C23C16/04 ,  H01L21/768 ,  H01L21/285 ,  C23C16/458

Abstract: Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

公开(公告)号：US10707122B2

公开(公告)日：2020-07-07

申请号：US16140342

申请日：2018-09-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Sree Rangasai V. Kesapragada ,  Kevin Moraes ,  Srinivas Guggilla ,  He Ren ,  Mehul Naik ,  David Thompson ,  Weifeng Ye ,  Yana Cheng ,  Yong Cao ,  Xianmin Tang ,  Paul F. Ma ,  Deenesh Padhi

IPC: H01L21/768 ,  H01L21/32 ,  H01L21/02 ,  H01L21/3105

Abstract: In some embodiments, a method of forming an interconnect structure includes selectively depositing a barrier layer atop a substrate having one or more exposed metal surfaces and one or more exposed dielectric surfaces, wherein a thickness of the barrier layer atop the one or more exposed metal surfaces is greater than the thickness of the barrier layer atop the one or more exposed dielectric surfaces. In some embodiments, a method of forming an interconnect structure includes depositing an etch stop layer comprising aluminum atop a substrate via a physical vapor deposition process; and depositing a barrier layer atop the etch stop layer via a chemical vapor deposition process, wherein the substrate is transferred from a physical vapor deposition chamber after depositing the etch stop layer to a chemical vapor deposition chamber without exposing the substrate to atmosphere.