Abstract:
A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.
Abstract:
A solid-state imaging device including a pixel region in which a plurality of pixels are arranged. The pixels each includes a photoelectric conversion section, a transfer transistor, a plurality of floating diffusion sections that receive a charge from the photoelectric conversion section through the transfer transistor, a reset transistor that resets the floating diffusion sections, a separating transistor that performs on-off control of a connection between the plurality of floating diffusion sections, and an amplifying transistor that outputs a signal corresponding to a potential of the floating diffusion sections.
Abstract:
A solid-state imaging device of a three-transistor pixel configuration having no selection transistor has a problem of a non-selection hot carrier white point, which is specific to this apparatus. A bias current during a non-reading period of pixels is made to flow to a pixel associated with an immediately previous selection pixel, for example, the immediately previous selection pixel itself. As a result, dark current only for one line occurs in each pixel, and the dark current for one line itself can be reduced markedly. Consequently, defective pixels due to non-selection hot carrier white points can be virtually eliminated.
Abstract:
A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
Abstract:
A solid-state imaging device includes a pixel unit in which a plurality of pixels converting physical quantities into electric signals are arranged in a two-dimensional shape, a vertical signal line for reading signals from the pixels, and column circuits arranged corresponding to columns of the pixel unit and collecting the signals from the vertical signal line at the inside of the pixel unit.
Abstract:
An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.
Abstract:
A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.
Abstract:
A solid-state imaging device includes a pixel array section and a signal processing section. The pixel array section is configured to include a plurality of arranged rectangular pixels, each of which has different sizes in the vertical and horizontal directions, and a plurality of adjacent ones of which are combined to form a square pixel having the same size in the vertical and horizontal directions. The signal processing section is configured to perform a process of outputting, as a single signal, a plurality of signals read out from the combined plurality of rectangular pixels.
Abstract:
A solid state imaging element including a drive circuit and a pixel unit with pixels arranged in a matrix form. The pixels include a photoelectric conversion element configured to convert light incident thereupon into a charge and to accumulate the charge, a charge holding unit connected to the photoelectric conversion element, and a floating diffusion region. The drive circuit transfers a first portion of the charge accumulated in the photoelectric conversion element to the charge holding unit and concurrently transfers a second portion of the charge accumulated in the photoelectric conversion element to the floating diffusion region. Electronic global shutter is realized by transferring charge from the photoelectric conversion elements of each of the pixels at substantially the same time.
Abstract:
A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.