公开(公告)号：US07762141B2

公开(公告)日：2010-07-27

申请号：US12226613

申请日：2008-02-12

Applicant: Hiroaki Tanaka ,  Tetsuo Fujii

Inventor： Hiroaki Tanaka ,  Tetsuo Fujii

IPC: G01L9/12 ,  H05K3/00

CPC classification number: G01L9/0042 ,  Y10T29/49165

Abstract: A pressure sensor for a pressure medium includes: a sensor chip including a semiconductor substrate, a diaphragm in the substrate and a gauge resistor on the diaphragm; a protection cap covering the diaphragm; a case for accommodating the chip, introducing the pressure medium to the cap, and atmospheric air to the substrate; a terminal; a wiring; and a seal member. An embedded portion of the wiring is coupled with the gauge resistor. A connection portion of the wiring couples the embedded portion and the terminal. The embedded portion is covered with the cap to be isolated from the pressure medium. The seal member is disposed between the case and the substrate to isolate the connection portion from the pressure medium and the atmospheric air.

Abstract translation: 用于压力介质的压力传感器包括：传感器芯片，包括半导体衬底，衬底中的隔膜和隔膜上的量规电阻器; 覆盖隔膜的保护帽; 用于容纳所述芯片的壳体，将所述压力介质引入所述盖子，以及将大气引导到所述基板; 一个终端 接线 和密封件。 布线的嵌入部分与量规电阻耦合。 布线的连接部分将嵌入部分和终端连接起来。 嵌入部分被覆盖以与压力介质隔离。 密封构件设置在壳体和基板之间，以将连接部分与压力介质和大气隔离。

公开(公告)号：US20100155865A1

公开(公告)日：2010-06-24

申请号：US12654002

申请日：2009-12-08

Applicant: Kazuhiko Sugiura ,  Tetsuo Fujii ,  Hisanori Yokura

Inventor： Kazuhiko Sugiura ,  Tetsuo Fujii ,  Hisanori Yokura

IPC: H01L29/84 ,  H01L21/78

CPC classification number: B81C1/00134 ,  B81B2207/095 ,  B81C1/00269 ,  B81C1/00301 ,  H01L2224/48463 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105

Abstract: A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.

Abstract translation: 半导体器件包括传感器部分，帽部分和离子注入层。 传感器部分在表面的表面部分具有传感器结构。 盖部具有彼此相对的第一和第二表面，并且包括通孔。 传感器部分的表面与盖部分的第一表面接合，使得传感器结构被密封在传感器部分和盖部分之间。 离子注入层位于帽部的第二表面上。 通孔从第一表面延伸到第二表面，并通过离子注入层暴露。

公开(公告)号：US20100025717A1

公开(公告)日：2010-02-04

申请号：US12576122

申请日：2009-10-08

Applicant: Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

Inventor： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract translation: 一种基于氮化镓（GaN）的发光二极管（LED），其中通过LED的氮面（N面）提取光，并且将N面的表面粗糙化成一个或多个六边形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面的表面变粗糙，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

公开(公告)号：USRE41047E1

公开(公告)日：2009-12-22

申请号：US10315566

申请日：2002-12-10

Applicant: Tetsuo Fujii

Inventor： Tetsuo Fujii

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P2015/0817

Abstract: A single crystal silicon substrate (1) is bonded through an SiO2 film (9) to a single crystal silicon substrate (8), and the single crystal silicon substrate (1) is made into a thin film. A cantilever (13) is formed on the single crystal silicon substrate (1), and the thickness of the cantilever (13) in a direction parallel to the surface of the single crystal silicon substrate (1) is made smaller than the thickness of the cantilever in the direction of the depth of the single crystal silicon substrate (1), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever (13) and the part of the single crystal silicon substrate (1), opposing the cantilever (13), are, respectively, coated with an SiO2 film (5), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit (10) is formed on the single crystal silicon substrate (1), so that signal processing is performed as the cantilever (13) moves.

Abstract translation: 单晶硅基板（1）通过SiO 2膜（9）与单晶硅基板（8）接合，将单晶硅基板（1）制成薄膜。 在单晶硅衬底（1）上形成悬臂（13），并且使悬臂（13）的平行于单晶硅衬底（1）的表面的方向的厚度小于单晶硅衬底 在单晶硅衬底（1）的深度方向上的悬臂，并且可以在平行于衬底表面的方向上移动。 此外，悬臂（13）的表面和单晶硅衬底（1）的与悬臂（13）相对的部分分别涂覆有SiO 2膜（5），使得电极短路 在容量型传感器中被阻止。 此外，在单晶硅衬底（1）上形成信号处理电路（10），从而当悬臂（13）移动时进行信号处理。

公开(公告)号：US20090229370A1

公开(公告)日：2009-09-17

申请号：US12385225

申请日：2009-04-02

Applicant: Tetsuo Fujii ,  Eishi Kawasaki

Inventor： Tetsuo Fujii ,  Eishi Kawasaki

IPC: G01R27/26

CPC classification number: G01L9/0042 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C2203/0118 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.

公开(公告)号：US20090194827A1

公开(公告)日：2009-08-06

申请号：US11884275

申请日：2006-04-25

Applicant: Masahiro Ogino ,  Minoru Murata ,  Kazuhiko Sugiura ,  Tetsuo Fujii

Inventor： Masahiro Ogino ,  Minoru Murata ,  Kazuhiko Sugiura ,  Tetsuo Fujii

IPC: H01L29/84 ,  H01R43/02

CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P2015/0814 ,  H01L24/02 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05552 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/85 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  Y10T29/49213 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate, an element portion provided in the semiconductor substrate, and a connecting portion connected to the semiconductor substrate electrically, in which the connecting portion is formed of a conductive material in order to perform an electrical connection to an outside. The connecting portion is directly in contact with a surface of the semiconductor substrate such that the connecting portion and the semiconductor substrate are connected electrically.

Abstract translation: 半导体器件包括半导体衬底，设置在半导体衬底中的元件部分和连接到半导体衬底的电连接部分，其中连接部分由导电材料形成以便与外部电连接。 连接部分与半导体衬底的表面直接接触，使得连接部分和半导体衬底电连接。

公开(公告)号：US20090079017A1

公开(公告)日：2009-03-26

申请号：US12292068

申请日：2008-11-12

Applicant: Tetsuo Fujii

Inventor： Tetsuo Fujii

IPC: H01L29/92

CPC classification number: B81B7/0058 ,  B81B2207/012 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a first substrate including first, second and third layers; and a second substrate including fourth, fifth and sixth layers. The first substrate provides an electric device. The second substrate provides a physical quantity sensor. The first layer of the first substrate and the fourth layer of the second substrate are shields for protecting the electric device and the physical quantity sensor. The device is protected from outside disturbance without adding an additional shield.

Abstract translation: 半导体器件包括包括第一，第二和第三层的第一衬底; 以及包括第四层，第五层和第六层的第二衬底。 第一基板提供电气装置。 第二基板提供物理量传感器。 第一基板的第一层和第二基板的第四层是用于保护电气装置和物理量传感器的屏蔽。 该设备受到外部干扰的保护，无需添加额外的屏蔽。

公开(公告)号：US20090071259A1

公开(公告)日：2009-03-19

申请号：US12226613

申请日：2008-02-12

Applicant: Hiroaki Tanaka ,  Tetsuo Fujii

Inventor： Hiroaki Tanaka ,  Tetsuo Fujii

IPC: G01L9/02 ,  H05K3/00

CPC classification number: G01L9/0042 ,  Y10T29/49165

Abstract: A pressure sensor for a pressure medium includes: a sensor chip (3) including a semiconductor substrate (3a), a diaphragm (3b) in the substrate and a gauge resistor (3c) on the diaphragm; a protection cap (5) covering the diaphragm; a case (2) for accommodating the chip, introducing the pressure medium to the cap, and atmospheric air to the substrate; a terminal (2c); a wiring (4); and a seal member (7). An embedded portion (4a-4c, 4e) of the wiring is coupled with the gauge resistor. A connection portion (4d, 4f) of the wiring couples the embedded portion and the terminal. The embedded portion is covered with the cap to be isolated from the pressure medium. The seal member is disposed between the case and the substrate to isolate the connection portion from the pressure medium and the atmospheric air.

Abstract translation: 一种用于压力介质的压力传感器包括：传感器芯片（3），包括半导体衬底（3a），衬底中的隔膜（3b）和隔膜上的量规电阻（3c） 覆盖隔膜的保护盖（5）; 用于容纳所述芯片的壳体（2），将所述压力介质引入所述盖子，以及将大气引导到所述基板; 终端（2c）; 布线（4）; 和密封件（7）。 布线的嵌入部分（4a-4c，4e）与量规电阻耦合。 布线的连接部分（4d，4f）将嵌入部分和终端连接起来。 嵌入部分被覆盖以与压力介质隔离。 密封构件设置在壳体和基板之间，以将连接部分与压力介质和大气隔离。

公开(公告)号：US20090057812A1

公开(公告)日：2009-03-05

申请号：US12230209

申请日：2008-08-26

Applicant: Nozomu Akagi ,  Yasuhiro Kitamura ,  Tetsuo Fujii

Inventor： Nozomu Akagi ,  Yasuhiro Kitamura ,  Tetsuo Fujii

IPC: H01L29/06 ,  H01L21/76

CPC classification number: H01L21/76264 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: In a manufacturing of a semiconductor device, at least one of elements is formed in each of element formation regions of a substrate having a main side and a rear side, and the substrate is thinned by polished from a rear side of the substrate, and then, multiple trenches are formed on the rear side of the substrate, so that each trench reaches the main side of the substrate. After that, an insulating material is deposited over an inner surface of each trench to form an insulating layer in the trench, so that the element formation regions are isolated. Thereby, generation of cracks and structural steps in the substrate and separation of element formation regions from the substrate can be suppressed.

Abstract translation: 在半导体器件的制造中，在具有主侧和后侧的基板的元件形成区域中的至少一个元件形成区域中形成至少一个元件，并且通过从基板的后侧抛光基板而使基板变薄 在衬底的后侧形成多个沟槽，使得每个沟槽到达衬底的主侧。 之后，绝缘材料沉积在每个沟槽的内表面上，以在沟槽中形成绝缘层，使得元件形成区域被隔离。 由此，可以抑制基板的裂纹和结构的产生，并且能够抑制元件形成区域与基板的分离。

公开(公告)号：US20080290490A1

公开(公告)日：2008-11-27

申请号：US12068771

申请日：2008-02-12

Applicant: Tetsuo Fujii ,  Kazuhiko Sugiura

Inventor： Tetsuo Fujii ,  Kazuhiko Sugiura

IPC: H01L21/50 ,  H01L23/02

CPC classification number: B81B7/007 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor device includes: a first substrate made of semiconductor and having first regions, which are insulated from each other and disposed in the first substrate; and a second substrate having electric conductivity and having second regions and insulation trenches. Each insulation trench penetrates the second substrate so that the second regions are insulated from each other. The first substrate provides a base substrate, and the second substrate provides a cap substrate. The second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate. The second regions include an extraction conductive region, which is coupled with a corresponding first region.

Abstract translation: 半导体器件包括：由半导体制成的第一衬底，其具有彼此绝缘并设置在第一衬底中的第一区域; 以及具有导电性并具有第二区域和绝缘沟槽的第二基板。 每个绝缘沟槽穿透第二衬底，使得第二区域彼此绝缘。 第一衬底提供基底，第二衬底提供盖衬底。 第二基板被接合到第一基板，使得在第一基板的预定表面区域和第二基板之间设置密封空间。 第二区域包括与对应的第一区域耦合的引出导电区域。