公开(公告)号：US08158335B2

公开(公告)日：2012-04-17

申请号：US12210737

申请日：2008-09-15

Applicant: Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

Inventor： Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

IPC: G03F7/26

CPC classification number: H01L21/0273 ,  G03F7/0035 ,  G03F7/405 ,  H01L21/3086

Abstract: The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.

Abstract translation: 本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化坚固层。 在第一图案化抗蚀剂层和基底上形成水溶性聚合物层，由此在第一图案化抗蚀剂层和水溶性聚合物层的界面处发生反应。 去除未反应的水溶性聚合物层。 此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内，或者邻接第一图案化抗蚀剂层的至少一部分 。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。

公开(公告)号：US07993808B2

公开(公告)日：2011-08-09

申请号：US11324588

申请日：2006-01-03

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/00 ,  G03F7/004

CPC classification number: G02B1/111 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/111

Abstract: A coating material disposed overlying a photo sensitive layer during an immersion lithography process includes a polymer that is substantially insoluble to an immersion fluid and an acid capable of neutralizing a base quencher from the photo sensitive layer.

Abstract translation: 在浸渍光刻工艺期间设置在光敏层上的涂层材料包括基本上不溶于浸没流体的聚合物和能够从光敏层中和碱猝灭剂的酸。

公开(公告)号：US20110164234A1

公开(公告)日：2011-07-07

申请号：US13050251

申请日：2011-03-17

Applicant: Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  H.J. Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

Inventor： Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  H.J. Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

IPC: G03B27/58 ,  G03B27/54

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70858 ,  Y10S430/106 ,  Y10S430/111

Abstract: A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.

Abstract translation: 用于光刻处理的材料包括响应于与酸的反应而变成可溶于碱溶液的聚合物和多个具有磁性元素的磁放大发生器（MAG），并分别与磁性元件形成酸结合 响应辐射能量。

公开(公告)号：US20110008956A1

公开(公告)日：2011-01-13

申请号：US12610282

申请日：2009-10-31

Applicant: Tsung-Lin Lee ,  Clement Hsingjen Wann ,  Ching-Yu Chang

Inventor： Tsung-Lin Lee ,  Clement Hsingjen Wann ,  Ching-Yu Chang

IPC: H01L21/768

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  H01L21/76816

Abstract: A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.

Abstract translation: 提供一种制造半导体器件的方法，其包括提供衬底。 材料层形成在衬底上。 聚合物层形成在材料层上。 使用聚合物层的一部分自组装纳米尺寸的特征。 使用纳米尺寸的特征对衬底进行图案化。

公开(公告)号：US07819980B2

公开(公告)日：2010-10-26

申请号：US11204691

申请日：2005-08-16

Applicant: Chen-Yuan Hsia ,  Chang-Cheng Hung ,  Chi-Lun Lu ,  Shih-Ming Chang ,  Wen-Chuan Wang ,  Yen-Bin Huang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Chen-Yuan Hsia ,  Chang-Cheng Hung ,  Chi-Lun Lu ,  Shih-Ming Chang ,  Wen-Chuan Wang ,  Yen-Bin Huang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC classification number: B08B6/00 ,  B08B5/00 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051

Abstract: A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.

Abstract translation: 一种用于半导体晶片制造的系统，包括用于处理晶片的腔室处理路径，以及可操作以通过静电和电磁方法从晶片去除颗粒的装置，其中该装置安装在室过程路径中。

公开(公告)号：US20100099267A1

公开(公告)日：2010-04-22

申请号：US12254658

申请日：2008-10-20

Applicant: Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

IPC: H01L21/31 ,  C23C16/00

CPC classification number: H01L21/0273 ,  B05D1/60 ,  B05D3/02 ,  G03F7/167 ,  H01L21/0276

Abstract: Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material.

Abstract translation: 提供了一种用于将涂料气相沉积到半导体衬底上的方法和系统。 在一个实施例中，沉积光致抗蚀剂。 可以通过气相沉积来进行原位烘烤工艺。 在一个实施例中，在沉积期间改变待沉积到衬底上的材料的化学成分的比例。 因此，可以提供具有梯度化学成分分布的层。 在一个实施例中，可以提供BARC层，其包括提供通过该层的n，k分布的梯度化学分量分布。 可能蒸气沉积的其他材料包括图案冷冻材料。

公开(公告)号：US20100068874A1

公开(公告)日：2010-03-18

申请号：US12560164

申请日：2009-09-15

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/28 ,  H01L21/306

CPC classification number: H01L21/28123 ,  H01L21/0271 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32132 ,  H01L21/32139 ,  H01L29/517

Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a sacrificial layer on the second material layer; forming a patterned resist layer on the sacrificial layer; applying a first wet etching process using a first etch solution to the substrate to pattern the sacrificial layer using the patterned resist layer as a mask, resulting in a patterned sacrificial layer; applying an ammonia hydroxide-hydrogen peroxide-water mixture (APM) solution to the substrate to pattern the second material layer, resulting in a patterned second material layer; applying a second wet etching process using a second etch solution to the substrate to pattern the first material layer; and applying a third wet etching process using a third etch solution to remove the patterned sacrificial layer.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在基底上形成第一材料层; 在所述第一材料层上形成第二材料层; 在所述第二材料层上形成牺牲层; 在所述牺牲层上形成图案化的抗蚀剂层; 将使用第一蚀刻溶液的第一湿蚀刻工艺应用于衬底，以使用图案化的抗蚀剂层作为掩模对牺牲层进行图案化，得到图案化的牺牲层; 将氨氢氧化物 - 过氧化氢 - 水混合物（APM）溶液施加到所述基底上以对所述第二材料层进行图案化，得到图案化的第二材料层; 使用第二蚀刻溶液将第二湿蚀刻工艺应用于所述衬底以对所述第一材料层进行图案化; 以及使用第三蚀刻溶液施加第三湿蚀刻工艺以去除图案化的牺牲层。

公开(公告)号：US07611825B2

公开(公告)日：2009-11-03

申请号：US10942499

申请日：2004-09-15

Applicant: Ching-Yu Chang ,  Kuei Shun Chen ,  Bang-Ching Ho

Inventor： Ching-Yu Chang ,  Kuei Shun Chen ,  Bang-Ching Ho

IPC: G03F7/00

CPC classification number: G03F7/091 ,  G03F7/11

Abstract: A method comprises forming a BARC layer on a substrate, treating the BARC layer to make its surface hydrophilic, forming a photoresist layer on the treated BARC layer, exposing the photoresist layer to a predetermined pattern, and developing the photoresist layer to form patterned photoresist.

Abstract translation: 一种方法包括在衬底上形成BARC层，处理BARC层使其表面具有亲水性，在经处理的BARC层上形成光致抗蚀剂层，将光致抗蚀剂层暴露于预定图案，并显影光致抗蚀剂层以形成图案化的光致抗蚀剂。

公开(公告)号：US20080280230A1

公开(公告)日：2008-11-13

申请号：US11747124

申请日：2007-05-10

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03C5/00

CPC classification number: G03F7/40 ,  G03F7/38

Abstract: The present disclosure provides a plurality of methods of performing a lithography process. In one embodiment, a substrate including a layer of photoresist is provided. The layer of photoresist is exposed. The exposed layer of photoresist is developed. A chemical rinse solution is applied to the developed photoresist. The chemical rinse solution includes an alcohol base chemical. The substrate is spun dry.

Abstract translation: 本公开提供了执行光刻工艺的多种方法。 在一个实施例中，提供了包括光致抗蚀剂层的基板。 曝光该光致抗蚀剂层。 曝光的光致抗蚀剂层被开发出来。 将化学冲洗溶液施加到显影的光致抗蚀剂上。 化学冲洗液包括醇基化学品。 将基材旋转干燥。

公开(公告)号：US07435512B2

公开(公告)日：2008-10-14

申请号：US10894924

申请日：2004-07-20

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F1/00

CPC classification number: G03F7/70441 ,  G03F1/36

Abstract: In a photolithography process, a photoresist layer is formed on a substrate. A photomask is aligned over the substrate to transfer pattern images defined in the photomask on the substrate. The photomask includes first and second patterns of different light transmission rates, and a dummy pattern surrounding the second pattern having a light transmission rate lower than that of the first pattern. The substrate is exposed to a light radiation through the photomask. The photoresist layer then is developed to form the pattern images. The dummy pattern is dimensionally configured to allow light transmission, but in a substantially amount so that the dummy pattern is not imaged during exposure.

Abstract translation: 在光刻工艺中，在基板上形成光致抗蚀剂层。 光掩模在衬底上对准以传输在衬底上的光掩模中限定的图案图像。 光掩模包括不同透光率的第一和第二图案，以及围绕第二图案的虚拟图案，其透光率低于第一图案的透光率。 将基板暴露于通过光掩模的光辐射。 然后将光致抗蚀剂层显影以形成图案图像。 虚拟图案被尺寸地构造成允许光透射，但是基本上是这样的，使得在曝光期间伪图案不被成像。