公开(公告)号：US07767561B2

公开(公告)日：2010-08-03

申请号：US10896113

申请日：2004-07-20

Applicant: Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC: H01L21/425

CPC classification number: H01J37/32412 ,  C23C14/48 ,  H01J37/32357 ,  H01L21/2236 ,  H01L21/31612

Abstract: A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.

Abstract translation: 用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入工艺在反应室中进行，其中离子喷淋网格将室分成上部离子产生区域和下部工艺区域， 具有相对于离子喷淋栅格的表面平行方向定向的多个细长孔的离子喷淋格栅。

公开(公告)号：US20100129670A1

公开(公告)日：2010-05-27

申请号：US12590200

申请日：2009-11-03

Applicant: Jennifer Y. Sun ,  Ren-Guan Duan ,  Kenneth S. Collins

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Kenneth S. Collins

IPC: B32B18/00 ,  B32B17/06 ,  B32B9/04 ,  B05D3/02 ,  C04B35/50 ,  C04B35/553

CPC classification number: C04B41/86 ,  C03C8/00 ,  C03C2214/20 ,  C04B41/009 ,  C04B41/5023 ,  H01J37/32477 ,  C04B41/4539 ,  C04B41/5055 ,  C04B35/10 ,  C04B35/00 ,  C04B35/14 ,  C04B35/565 ,  C04B35/584 ,  C04B35/581

Abstract: Embodiments of the invention relate to compositions of metal oxyfluoride-comprising glazes or metal fluoride-comprising glazes, glass ceramics, and combinations thereof which are useful as plasma-resistant solid substrates or plasma resistant protective coatings over other substrates. Also described are methods of fabricating various structures which incorporate such compositions, including solid substrates and coatings over the surface of a substrate which has a melting point which is higher than about 1600° C., such as aluminum oxide, aluminum nitride, quartz, silicon carbide, silicon nitride.

Abstract translation: 本发明的实施方案涉及可用作等离子体固体基质或耐等离子体保护涂层超过其它基底的包含氟化of的釉料或含金属氟化物的釉料，玻璃陶瓷及其组合的组合物。 还描述了制造包含这样的组合物的各种结构的方法，其包括在熔点高于约1600℃的基底表面上的固体基质和涂层，例如氧化铝，氮化铝，石英，硅 碳化物，氮化硅。

公开(公告)号：US07642180B2

公开(公告)日：2010-01-05

申请号：US11901969

申请日：2007-09-18

Applicant: Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

Inventor： Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC: H01L21/44

CPC classification number: H01J37/321 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/78618

Abstract: A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.

Abstract translation: 通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积 然后可以加热以将掺杂剂驱动到晶体管中。 一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

公开(公告)号：US20090294062A1

公开(公告)日：2009-12-03

申请号：US12128963

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: C23C16/505 ,  C23F1/02

CPC classification number: H01J37/32935 ,  H01J37/32091 ,  H01J37/32183

Abstract: In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.

Abstract translation: 在采用源和偏压射频功率发生器的等离子体反应器中，等离子体通过在另一发生器中的补偿调制而在源极或偏置功率发生器的输出中的设计瞬态稳定。

公开(公告)号：US20090162647A1

公开(公告)日：2009-06-25

申请号：US12004907

申请日：2007-12-21

Applicant: Jennifer Y. Sun ,  Li Xu ,  Kenneth S. Collins ,  Thomas Graves ,  Ren-Guan Duan ,  Senh Thach

Inventor： Jennifer Y. Sun ,  Li Xu ,  Kenneth S. Collins ,  Thomas Graves ,  Ren-Guan Duan ,  Senh Thach

IPC: B32B15/04 ,  B05D3/00

CPC classification number: C23C16/4404 ,  H01J37/32467 ,  H01J37/32477

Abstract: An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof.

Abstract translation: 描述了耐化学活性等离子体腐蚀或侵蚀的制品以及制造该制品的方法。 该制品由金属或金属合金基材组成，其表面上具有金属或金属合金的氧化物的涂层。 氧化物涂层的结构本质上是柱状的。 构成氧化物的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金基底之间的界面处的晶粒尺寸大，并且其中氧化物涂层在氧化物之间的界面处被压缩 涂层和金属或金属合金基材。 通常，金属选自钇，钕，钐，铽，镝，铒，镱，钪，铪，铌或其组合。

公开(公告)号：US20090025878A1

公开(公告)日：2009-01-29

申请号：US11828568

申请日：2007-07-26

Applicant: Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

Inventor： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC: H01L21/306

CPC classification number: H01J37/16 ,  H01J37/20 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32697 ,  H01J37/32834

Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

Abstract translation: 通过提供旁路电流流动路径，RF接地回流电流从反应室的不对称特征转向。 一个旁路电流流动路径避免了室底部中的泵送端口，并且包括从侧壁延伸到接地基座的导电对称格栅。 另一个旁路电流流动路径避免了晶片狭缝阀，并且包括桥接由狭缝阀占据的侧壁部分的导电带阵列。

公开(公告)号：US20080283387A1

公开(公告)日：2008-11-20

申请号：US12185772

申请日：2008-08-04

Applicant: Michael R. Rice ,  Claes H. Bjorkman ,  Jun Zhao ,  Kenneth S. Collins ,  Thomas Miu

Inventor： Michael R. Rice ,  Claes H. Bjorkman ,  Jun Zhao ,  Kenneth S. Collins ,  Thomas Miu

IPC: C23C14/34

CPC classification number: H05K3/3478 ,  H01L21/4853 ,  H01L21/67144 ,  H01L21/6835 ,  H01L23/544 ,  H01L24/11 ,  H01L24/742 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K2201/10212 ,  H05K2203/0338 ,  H05K2203/041 ,  H01L2924/00 ,  H01L2224/05599

Abstract: In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided.

Abstract translation: 在第一方面，提供了一种用于将导电片传送到目标衬底的电极焊盘的可编程传送装置。 可编程转移装置包括（1）转移基板; 和（2）形成在转印基板上的多个可单独寻址的电极。 每个电极适于在将导电片传送到目标衬底的电极焊盘的过程中选择性地吸引和保持导电片。 提供了许多其他方面。

公开(公告)号：US20080264565A1

公开(公告)日：2008-10-30

申请号：US11796211

申请日：2007-04-27

Applicant: Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC: C04B35/48 ,  C23C16/22 ,  H01L21/3065

CPC classification number: C23C16/4404 ,  C04B35/111 ,  C04B35/505 ,  C04B41/009 ,  C04B41/5045 ,  C04B41/5346 ,  C04B41/87 ,  C04B41/91 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3244 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9692 ,  H01J37/32467 ,  C04B41/4527 ,  C04B41/5031 ,  C04B41/5042 ,  C04B35/10 ,  C04B35/14 ,  C04B35/581

Abstract: A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.

Abstract translation: 一种耐半导体加工中含卤素等离子体侵蚀的陶瓷制品。 陶瓷制品包括多相陶瓷，通常包括两相至三相。 陶瓷由摩尔浓度范围为约50摩尔％至约75摩尔％的氧化钇形成; 摩尔浓度范围为约10摩尔％至约30摩尔％的氧化锆; 和选自氧化铝，氧化铪，氧化钪，氧化钕，氧化铌，氧化钐，氧化镱，氧化铒，氧化铈及其组合中的至少一种其它组分，摩尔浓度范围为 约10摩尔％至约30摩尔％。

公开(公告)号：US20080257261A1

公开(公告)日：2008-10-23

申请号：US11738505

申请日：2007-04-22

Applicant: Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horiaka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger Alan Lindley ,  Hong S. Yang

Inventor： Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horiaka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger Alan Lindley ,  Hong S. Yang

IPC: H05H1/00

CPC classification number: H01J37/3266 ,  H01J37/32623

Abstract: Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.

Abstract translation: 本发明的实施例涉及等离子体处理装置及其使用方法。 在一些实施例中，等离子体控制磁体组件包括以预定图案布置的多个磁体，其在靠近组件的区域中产生强度大于10高斯的磁场，并且在远离组件的区域中小于10高斯。

公开(公告)号：US07407081B2

公开(公告)日：2008-08-05

申请号：US11095943

申请日：2005-03-31

Applicant: Michael R. Rice ,  Claes H. Bjorkman ,  Jun Zhao ,  Kenneth S. Collins ,  Thomas Miu

Inventor： Michael R. Rice ,  Claes H. Bjorkman ,  Jun Zhao ,  Kenneth S. Collins ,  Thomas Miu

IPC: B23K1/00 ,  B23Q16/00

CPC classification number: H05K3/3478 ,  H01L21/4853 ,  H01L21/67144 ,  H01L21/6835 ,  H01L23/544 ,  H01L24/11 ,  H01L24/742 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K2201/10212 ,  H05K2203/0338 ,  H05K2203/041 ,  H01L2924/00 ,  H01L2224/05599

Abstract: In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided.

Abstract translation: 在第一方面，提供了一种用于将导电片传送到目标衬底的电极焊盘的可编程传送装置。 可编程转移装置包括（1）转移基板; 和（2）形成在转印基板上的多个可单独寻址的电极。 每个电极适于在将导电片传送到目标衬底的电极焊盘的过程中选择性地吸引和保持导电片。 提供了许多其他方面。