公开(公告)号：US20200091681A1

公开(公告)日：2020-03-19

申请号：US16471330

申请日：2017-12-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC: H01S5/042 ,  H01S5/028 ,  H01S5/22 ,  H01S5/20

Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.

公开(公告)号：US20200091372A1

公开(公告)日：2020-03-19

申请号：US16466658

申请日：2017-12-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plössl ,  Norwin von Malm ,  Dominik Scholz ,  Christoph Schwarzmaier ,  Martin Rudolf Behringer ,  Alexander F. Pfeuffer

IPC: H01L33/00

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

公开(公告)号：US20200083401A1

公开(公告)日：2020-03-12

申请号：US15749768

申请日：2016-08-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： David O'BRIEN ,  Britta GOEOETZ ,  Norwin VON MALM

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/54 ,  H01L33/06 ,  H01L51/56 ,  H01L27/32 ,  H01L51/52

Abstract: The invention relates, in one embodiment, to a method for producing light-emitting semiconductor components, which method comprises the following steps: A) providing a glass capillary (2) composed of a glass material, B) filling the glass capillary (2) with luminescent substances (3), C) sealing the glass capillary (2) in a sealing region (22) by melting the glass material such that the glass capillary (2) is closed by the glass material itself, and D) attaching the sealed glass capillary (2) to a light-emitting diode chip (4) such that the radiation emitted by the light-emitting diode chip (4) is converted into visible light by the luminescent substances (3) during operation, wherein in step C) a distance between the sealing region (22) and the luminescent substances (3) is at most 7 mm, and wherein the different luminescent substances (3) are separated from each other along a longitudinal axis (L) of the glass capillary (2).

公开(公告)号：US10586889B2

公开(公告)日：2020-03-10

申请号：US16347891

申请日：2018-01-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens Ebbecke

IPC: H01L33/06 ,  H01L27/20 ,  H01L33/32

Abstract: A single photon source includes a semiconductor body and a transducer, wherein the transducer during operation of a single photon source can be coupled into an active zone, disposed between a first and second semiconductor layer of the semiconductor body, the active zone and the transducer are arranged at a same vertical height to a carrier of the single photon source and piezoelectric intermediate layer material so that the intermediate layer is a propagation medium for surface waves generated or excited by the transducer, the intermediate layer is arranged in places between the first semiconductor layer and the active zone and adjoins the active zone, and an electrical insulation between the intermediate layer and the transducer is achieved by the intermediate layer being undoped at least in overlapping regions with the transducer or by an insulating layer being arranged between the transducer and the intermediate layer.

公开(公告)号：US20200066204A1

公开(公告)日：2020-02-27

申请号：US16487623

申请日：2018-03-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thorsten Frank Baumheinrich

IPC: G09G3/32

Abstract: An arrangement for operating radiation emitting devices includes a plurality of radiation emitting devices each having a first capacitance, a driver circuit that supplies the devices with electrical energy, and a compensation structure having a variable second capacitance corresponding to each device and means for adjusting the respective second capacitance, the compensation structure being connected to the device such that a total capacitance assigned to a device and dependent on the first capacitance can be adjusted by the second capacitance.

公开(公告)号：US20200058831A1

公开(公告)日：2020-02-20

申请号：US16484541

申请日：2018-01-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Georg Dirscherl

IPC: H01L33/50 ,  H01L33/58 ,  C09K11/08 ,  C09K11/70

Abstract: A method for producing an output coupling element and an output coupling element are disclosed. In an embodiment a method includes producing a suspension having quantum dots in a suspension medium, wherein each quantum dot comprises a core having a semiconductor material, directly applying the suspension onto a surface of an optoelectronic component and/or onto a surface of a carrier and removing the suspension medium for producing the output coupling element, wherein the output coupling element is matrix-free and transparent to radiation of a red range and/or a IR range.

公开(公告)号：US20200058630A1

公开(公告)日：2020-02-20

申请号：US16486559

申请日：2018-03-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Norwin von Malm ,  Andreas PIössl

IPC: H01L25/16 ,  H01L23/00 ,  H01L25/075 ,  H01L33/40 ,  H01L33/62 ,  H01L33/56 ,  H01L33/00

Abstract: A method of manufacturing an optoelectronic component includes: A) providing a sub-strate, B) providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate and including at least one first metal, C) providing semiconductor chips each having a metallic termination layer on their rear side, the metallic termination layer including at least one second metal different from the first metal, and D) self-organized arranging the semiconductor chips on the metallic liquid so that the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid, wherein the intermetallic compound is a connecting layer between the substrate and the semiconductor chips.

公开(公告)号：US10566500B2

公开(公告)日：2020-02-18

申请号：US16307054

申请日：2017-05-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/44 ,  H01L33/38 ,  H01L33/02 ,  H01L33/54 ,  H01L33/62

Abstract: An optoelectronic semiconductor component has a semiconductor body, wherein the semiconductor body includes a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer and an active region that generates or receives radiation disposed between the first semiconductor layer and the second semiconductor layer; the semiconductor body has a functional region in which the first semiconductor layer electrically conductively connects to a first terminal layer and the second semiconductor layer electrically conductively connects to a second terminal layer; an isolating layer is arranged on a side of the first terminal layer facing away from the semiconductor body; an interruption is formed in the isolating layer which at least locally delimits an inner subregion of the isolating layer in a lateral direction; the interruption encloses the functional region in the lateral direction; and in a plan view of the semiconductor component, the interruption overlaps with the active region.

公开(公告)号：US10564470B2

公开(公告)日：2020-02-18

申请号：US15325450

申请日：2015-05-29

Applicant: OSRAM OPTO Semiconductors GmbH

Inventor： Felix Kimme ,  Christopher Koelper ,  Peter Brick

IPC: G02F1/1335 ,  G02B5/12 ,  G02B5/124 ,  G02B5/128 ,  G02B5/13

Abstract: In various embodiments, a backlighting device is provided. The backlighting device may include a plurality of semiconductor light sources arranged in a plane and serving for generating light radiation, and a side wall arranged laterally with respect to the semiconductor light sources, where the side wall is inclined with respect to the plane predefined by the semiconductor light sources, and wherein the side wall is retroreflective at a side which can be irradiated with light radiation of the semiconductor light sources.

公开(公告)号：US20200052168A1

公开(公告)日：2020-02-13

申请号：US16101168

申请日：2018-08-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jörg Erich Sorg ,  Roland Schulz ,  Florian Peskoller ,  Alan Lenef ,  Christopher Tarry ,  Yi Zheng

IPC: H01L33/50 ,  H01L33/60 ,  H01S5/06

Abstract: A converter for an optoelectronic component, an optoelectronic component, a method for forming a converter for an optoelectronic component and a material for a reflector of an optoelectronic component are disclosed. In an embodiment, a converter includes a conversion element for converting a wavelength of electromagnetic radiation which passes through at least a part of the conversion element and a reflector, wherein the reflector includes a reflector material which includes MgF2 and/or an inorganic material as a matrix material in which a plurality of particles is embedded, wherein a refractive index of the matrix material amounts to at least 1 and at most 2, and wherein a refractive index of the particles amounts to at least 1.5.