公开(公告)号：US20160141397A1

公开(公告)日：2016-05-19

申请号：US15002826

申请日：2016-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Masami JINTYOU ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Takuya HIROHASHI ,  Shunsuke ADACHI

IPC: H01L29/66 ,  H01L21/473 ,  H01L21/3205 ,  H01L21/4757 ,  H01L29/786 ,  H01L21/3213

CPC classification number: H01L29/78696 ,  H01L21/32051 ,  H01L21/3213 ,  H01L21/473 ,  H01L21/4757 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.

Abstract translation: 提供一种半导体器件，其包括具有稳定的电特性或高可靠性的氧化物半导体的沟道形成区中具有减少的氧空位数的晶体管。 在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体层; 通过溅射法在氧化物半导体层上形成氧化物层，以形成包含氧化物半导体层和氧化物层的堆叠层氧化膜; 堆叠层氧化膜被加工成预定的形状; 在叠层氧化膜上形成含有Ti作为主要成分的导电膜; 蚀刻导电膜以形成源极和漏极以及背沟道侧的凹陷部; 并且与源极和漏极接触的堆叠层氧化膜的部分通过热处理而变为n型。

公开(公告)号：US20160118502A1

公开(公告)日：2016-04-28

申请号：US14921141

申请日：2015-10-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L21/324 ,  H01L29/423 ,  H01L21/3205 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/425 ,  H01L21/473 ,  H01L21/76826 ,  H01L21/76832 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78696

Abstract: A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.

Abstract translation: 包含氧化物半导体膜的半导体器件的电特性的变化被抑制，可靠性提高。 半导体器件包括栅电极，栅电极上的第一绝缘膜，第一绝缘膜上的氧化物半导体膜，与氧化物半导体膜电连接的源极，与氧化物半导体膜电连接的漏极， 氧化半导体膜上的第二绝缘膜，源电极和漏电极，第二绝缘膜上的第一金属氧化物膜，以及在第一金属氧化物膜上的第二金属氧化物膜。 第一金属氧化物膜含有至少一种与包含在氧化物半导体膜中的金属元素相同的金属元素。 第二金属氧化物膜包括混合第二金属氧化物膜和第一金属氧化物膜的区域。

公开(公告)号：US20160035567A1

公开(公告)日：2016-02-04

申请号：US14878399

申请日：2015-10-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L21/02 ,  H01L21/306 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20150317014A1

公开(公告)日：2015-11-05

申请号：US14699728

申请日：2015-04-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Takashi HAMOCHI

IPC: G06F3/047 ,  G09G5/00 ,  G06F3/044

CPC classification number: G06F3/044 ,  G06F3/047 ,  G06F2203/04102 ,  G06F2203/04103 ,  G09G5/003 ,  G09G2300/04

Abstract: A wiring is inhibited from being visible. Alternatively, a display device or a touch panel with high viewability is provided. A semiconductor device includes a transistor and a wiring electrically connected to the transistor that are over a light-transmitting substrate. Furthermore, a layer including an oxide semiconductor is provided closer to a substrate side than the wiring is so as to overlap with the wiring and serve as an anti-reflection layer that suppress light reflection at the wiring.

Abstract translation: 禁止接线可见。 或者，提供具有高可视性的显示装置或触摸面板。 半导体器件包括晶体管和电连接到透镜衬底上的晶体管的布线。 此外，包括氧化物半导体的层被设置为比布线更靠近基板侧以与布线重叠，并且用作抑制布线处的光反射的抗反射层。

公开(公告)号：US20150303309A1

公开(公告)日：2015-10-22

申请号：US14681383

申请日：2015-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648

Abstract: A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device using a transistor including an oxide semiconductor. A semiconductor device includes a transistor which includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, and a drain electrode electrically connected to the oxide semiconductor film. A second insulating film is provided over the transistor, and a protective film is provided over the second insulating film. The second insulating film includes oxygen. The protective film includes at least one of metal elements used for the oxide semiconductor film.

Abstract translation: 在使用包括氧化物半导体的晶体管的半导体器件中，可以抑制电特性的变化并且可以提高可靠性。 半导体器件包括晶体管，其包括栅电极，栅电极上的第一绝缘膜，第一绝缘膜上的氧化物半导体膜，电连接到氧化物半导体膜的源电极和与该氧化物半导体膜电连接的漏电极 氧化物半导体膜。 在晶体管上设置第二绝缘膜，在第二绝缘膜上设置保护膜。 第二绝缘膜包括氧。 保护膜包括用于氧化物半导体膜的金属元素中的至少一种。

公开(公告)号：US20150270404A1

公开(公告)日：2015-09-24

申请号：US14733489

申请日：2015-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/04 ,  G02F1/1362 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Abstract translation: 晶体管包括层叠有氧化物半导体膜和氧化膜的多层膜，栅极电极和栅极绝缘膜。 多层膜与栅电极重叠，栅极绝缘膜介于其间。 多层膜具有在氧化物半导体膜的底面和氧化物半导体膜的侧面之间具有第一角度的形状，以及氧化物膜的底面与氧化膜的侧面之间的第二角度。 第一个角度是锐角并小于第二个角度。 此外，制造包括这种晶体管的半导体器件。

公开(公告)号：US20150249160A1

公开(公告)日：2015-09-03

申请号：US14632177

申请日：2015-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L29/786 ,  H01L29/26

CPC classification number: H01L29/78606 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device including a transistor is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film, a third insulating film over the source electrode, and a fourth insulating film over the drain electrode. A fifth insulating film including oxygen is provided over the transistor. The third insulating film includes a first portion, the fourth insulating film includes a second portion, and the fifth insulating film includes a third portion. The amount of oxygen molecules released from each of the first portion and the second portion is smaller than the amount of oxygen molecules released from the third portion when the amounts are measured by thermal desorption spectroscopy.

Abstract translation: 提供了包括晶体管的半导体器件。 晶体管包括栅电极，栅电极上的第一绝缘膜，第一绝缘膜上的第二绝缘膜，第二绝缘膜上的氧化物半导体膜，与氧化物半导体膜电连接的源电极和漏电极 ，在源电极上方的第三绝缘膜，以及在漏极上的第四绝缘膜。 包括氧的第五绝缘膜设置在晶体管上。 第三绝缘膜包括第一部分，第四绝缘膜包括第二部分，第五绝缘膜包括第三部分。 当通过热解吸光谱法测量量时，从第一部分和第二部分中分离的氧分子的量小于从第三部分释放的氧分子的量。

公开(公告)号：US20150249157A1

公开(公告)日：2015-09-03

申请号：US14632381

申请日：2015-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/49 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1237 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696

Abstract: A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device using a transistor including an oxide semiconductor. One embodiment of a semiconductor device including a transistor includes a gate electrode, first and second insulating films over the gate electrode, an oxide semiconductor film over the second insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. A third insulating film is provided over the transistor and a fourth insulating film is provided over the third insulating film. The third insulating film includes oxygen. The fourth insulating film includes nitrogen. The amount of oxygen released from the third insulating film is 1×1019/cm3 or more by thermal desorption spectroscopy, which is estimated as oxygen molecules. The amount of oxygen molecules released from the fourth insulating film is less than 1×1019/cm3.

Abstract translation: 在使用包括氧化物半导体的晶体管的半导体器件中，电特性的变化被抑制，并且提高了可靠性。 包括晶体管的半导体器件的一个实施例包括栅电极，栅极上的第一和第二绝缘膜，第二绝缘膜上的氧化物半导体膜，以及与氧化物半导体膜电连接的源极和漏极。 第三绝缘膜设置在晶体管上方，第四绝缘膜设置在第三绝缘膜上。 第三绝缘膜包括氧。 第四绝缘膜包括氮。 从第三绝缘膜释放的氧的量通过热解吸光谱法为1×1019 / cm3以上，其被估计为氧分子。 从第四绝缘膜释放的氧分子的量小于1×1019 / cm3。

公开(公告)号：US20150221774A1

公开(公告)日：2015-08-06

申请号：US14610336

申请日：2015-01-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/227 ,  H01L29/24 ,  H01L29/22

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device with favorable electric characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The oxide semiconductor layer includes a region in contact with the first insulating layer, the first conductive layer is connected to the oxide semiconductor layer, and the second conductive layer is connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.

Abstract translation: 提供了具有良好电特性的半导体器件。 半导体器件包括第一绝缘层，第二绝缘层，氧化物半导体层和第一至第三导电层。 氧化物半导体层包括与第一绝缘层接触的区域，第一导电层连接到氧化物半导体层，第二导电层连接到氧化物半导体层。 第二绝缘层包括与氧化物半导体层接触的区域，第三导电层包括与第二绝缘层接触的区域。 氧化物半导体层包括第一至第三区域。 第一区域和第二区域彼此分离，第三区域位于第一区域和第二区域之间。 第三区域和第三导电层彼此重叠，第二绝缘层位于它们之间。 第一区域和第二区域包括具有比第三区域更高的碳浓度的区域。

公开(公告)号：US20150187878A1

公开(公告)日：2015-07-02

申请号：US14574424

申请日：2014-12-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L29/78606 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/13394 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.

Abstract translation: 为了提供包括其中使用氧化物半导体的晶体管和导通电流高的半导体器件。 在包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管的半导体器件中，第一晶体管和第二晶体管具有不同的结构。 此外，第一晶体管和第二晶体管是具有顶栅结构的晶体管，其中用作栅电极，源电极和漏电极的导电膜不重叠。 此外，在氧化物半导体膜中，在与栅电极，源电极和漏电极不重叠的区域中含有杂质元素。