公开(公告)号：US20200303616A1

公开(公告)日：2020-09-24

申请号：US16823206

申请日：2020-03-18

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: H01L39/24 ,  H01L39/12 ,  H01L39/22 ,  C23C14/34 ,  C23C14/54

Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

公开(公告)号：US20200219819A1

公开(公告)日：2020-07-09

申请号：US16241427

申请日：2019-01-07

Applicant: Applied Materials, Inc.

Inventor： Michael Yu-tak Young ,  Ludovic Godet ,  Robert Jan Visser

IPC: H01L23/544 ,  H01L21/67 ,  G03F9/00

Abstract: Embodiments of the present disclosure generally relate to an optically transparent substrate, comprising a major surface having a peripheral edge region with an orientation feature formed therein, and a texture formed on the peripheral edge region, the texture having an opacity that is greater than an opacity of the major surface.

公开(公告)号：US10707118B2

公开(公告)日：2020-07-07

申请号：US16283560

申请日：2019-02-22

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Wayne McMillan ,  Rutger Meyer Timmerman Thijssen ,  Naamah Argaman ,  Tapashree Roy ,  Sage Doshay

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/311 ,  H01L25/04 ,  H01L25/16

Abstract: Systems and methods herein are related to the formation of optical devices including stacked optical element layers using silicon wafers, glass, or devices as substrates. The optical elements discussed herein can be fabricated on temporary or permanent substrates. In some examples, the optical devices are fabricated to include transparent substrates or devices including charge-coupled devices (CCD), or complementary metal-oxide semiconductor (CMOS) image sensors, light-emitting diodes (LED), a micro-LED (uLED) display, organic light-emitting diode (OLED) or vertical-cavity surface-emitting laser (VCSELs). The optical elements can have interlayers formed in between optical element layers, where the interlayers can range in thickness from 1 nm to 3 mm.

公开(公告)号：US10203604B2

公开(公告)日：2019-02-12

申请号：US14989488

申请日：2016-01-06

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Douglas A. Buchberger, Jr. ,  Qiwei Liang ,  Ludovic Godet ,  Srinivas D. Nemani ,  Daniel J. Woodruff ,  Randy Harris ,  Robert B. Moore

IPC: G03F7/20 ,  H01L21/687

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US10192775B2

公开(公告)日：2019-01-29

申请号：US15461847

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L21/768 ,  H01L23/31

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US20180366317A1

公开(公告)日：2018-12-20

申请号：US16008495

申请日：2018-06-14

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：US09996006B2

公开(公告)日：2018-06-12

申请号：US15294348

申请日：2016-10-14

Applicant: Applied Materials, Inc.

Inventor： Christine Y. Ouyang ,  Sang Ki Nam ,  Ludovic Godet

IPC: G03F7/38 ,  G03F7/20 ,  G03F7/004 ,  G03F7/32

CPC classification number: G03F7/203 ,  G03F7/0045 ,  G03F7/2004 ,  G03F7/325

Abstract: Methods disclosed herein provide apparatus and methods for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber configured to apply an electric field to a substrate via a non-gas phase intermediate medium. Methods described herein include dissociation of a photoacid generator to generate anions and cations. The anions may be moved within the photoresist layer by the electric field to more precisely control the speed and location of acid generation and regeneration processes.

公开(公告)号：US09864276B2

公开(公告)日：2018-01-09

申请号：US15091247

申请日：2016-04-05

Applicant: Applied Materials, Inc.

Inventor： Christine Y. Ouyang ,  Ludovic Godet ,  Sang Ki Nam

IPC: H01L21/027 ,  G03F7/20 ,  G03F7/16

CPC classification number: G03F7/2053 ,  G03F7/168

Abstract: A method and apparatus for exposing a photoresist in the presence of an electric field using a high power continuous wave source as a radiation source is disclosed herein. In one embodiment, a processing region includes a stage, a translation mechanism, a continuous wave electromagnetic module, and plurality of electrode assemblies. The continuous wave electromagnetic module includes a continuous wave electromagnetic radiation source in the form of a high power continuous wave electromagnetic laser. An electric field is applied to the surface of the substrate using the plurality of electrode assemblies while the continuous wave electromagnetic radiation source selectively irradiates the surface of the substrate.

公开(公告)号：US09815091B2

公开(公告)日：2017-11-14

申请号：US14476398

申请日：2014-09-03

Applicant: Applied Materials, Inc.

Inventor： Christopher S. Ngai ,  Huixiong Dai ,  Ludovic Godet ,  Ellie Y. Yieh

IPC: B08B7/00 ,  B08B1/00 ,  H01L21/46 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683 ,  B08B6/00

CPC classification number: B08B1/001 ,  B08B1/00 ,  B08B1/008 ,  B08B6/00 ,  B08B7/0028 ,  H01L21/67028 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68742

Abstract: Particulate cleaning assemblies and methods for cleaning are disclosed. In one example, a device for removing particles from a backside surface of a substrate is described. The device includes a chamber body with a substrate chucking device, a particulate cleaning article positioned over the substrate supporting surface, an optical sensing device positioned under the particulate cleaning article and a substrate positioning device separates the particulate cleaning article and a substrate. In another example, a method for removing particles from a substrate is disclosed. The method includes positioning a substrate with a processing surface and a supporting surface in a process chamber. At least a portion of the substrate can be chucked to a substrate chucking device, the substrate chucking device having a substrate supporting surface with a particulate cleaning article positioned thereon. The substrate is then separated from the particulate cleaning article leaving particles behind.

公开(公告)号：US09553174B2

公开(公告)日：2017-01-24

申请号：US14622647

申请日：2015-02-13

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Christopher Hatem ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene

IPC: H01L29/66 ,  H01L21/30 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L29/66803 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/30 ,  H01L21/30604 ,  H01L21/3065

Abstract: Embodiments of the present invention provide methods for forming fin structure with desired materials using a conversion process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of forming a fin structure on a substrate includes performing an directional plasma process on a fin structure formed from a substrate comprising a first type of atoms, the directional plasma process dopes a second type of atoms on sidewalls of the fin structure, performing a surface modification process to form a surface modified layer on the sidewalls of the fin structure reacting with the first type of atoms, replacing the first type of the atoms with the second type of the atoms in the fin structure during the surface modification process, and forming the fin structure including the second type of the atoms on the substrate.

Abstract translation: 本发明的实施例提供了使用用于半导体芯片的鳍式场效应晶体管（FinFET）的三维（3D）堆叠的转换工艺来形成具有所需材料的鳍结构的方法。 在一个实施例中，在衬底上形成翅片结构的方法包括对由包括第一类型的原子的衬底形成的鳍结构执行定向等离子体处理，所述定向等离子体工艺在鳍的侧壁上掺杂第二类型的原子 结构，进行表面改性处理以在与第一类型的原子反应的翅片结构的侧壁上形成表面改性层，在表面改性期间用翅片结构中的第二类型的原子代替第一类型的原子 处理，并且形成包括基板上的第二类型的原子的翅片结构。