公开(公告)号：US20040238943A1

公开(公告)日：2004-12-02

申请号：US10695785

申请日：2003-10-30

Inventor： Tetsuo Fujii

IPC: H01L023/12

CPC classification number: G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/0828 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A dynamic quantity sensor includes a sensor board (10) having a movable portion (13) at one surface side thereof and a silicon layer (14) at another surface side thereof. The movable portion (13) is displaced under application of a dynamic quantity. The silicon layer (14) is separated from the movable portion (13) through an insulator (15). The dynamic quantity sensor also includes a circuit board (20) for transmitting/receiving electrical signals to/from the sensor board (20). The circuit board (20) is disposed to confront the one surface of the sensor board (10) through a gap portion (30) and cover the movable portion (13). The sensor board (20) and the circuit board (20) are bonded to each other around the gap portion (30) so that a bonding portion (40) is formed to substantially surround the gap portion (30) and thereby seal the gap portion (30).

Abstract translation: 动态量传感器包括在其一个表面侧具有可移动部分（13）的传感器板（10）和在其另一表面侧的硅层（14）。 可移动部分（13）在施加动态量的情况下移动。 硅层（14）通过绝缘体（15）与可动部分（13）分离。 动态量传感器还包括用于向/从传感器板（20）发送/接收电信号的电路板（20）。 电路板（20）设置成通过间隙部分（30）与传感器板（10）的一个表面相对并覆盖可动部分（13）。 传感器板（20）和电路板（20）围绕间隙部分（30）彼此接合，使得接合部分（40）形成为基本上围绕间隙部分（30），从而密封间隙部分 （30）。

公开(公告)号：US20040221650A1

公开(公告)日：2004-11-11

申请号：US10774695

申请日：2004-02-10

Inventor： Tuomo Lehtonen

IPC: G01P015/125

CPC classification number: G01P15/18 ,  G01P15/125 ,  G01P2015/0828

Abstract: The invention relates to measuring devices used in the measuring of acceleration and, more specifically, to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention contains a movable electrode (5) supported at an axis of rotation (7). The capacitance change in the pair of electrodes of the acceleration sensor, according to the present invention, is enhanced. The acceleration sensor structure, according to the present invention, enables improving the capacitance sensitivity of the pair of electrodes based on rotational motion and measuring acceleration with good performance in capacitive acceleration sensor designs.

Abstract translation: 本发明涉及用于测量加速度的测量装置，更具体地说，涉及电容式加速度传感器。 根据本发明的电容式加速度传感器包括支撑在旋转轴线（7）处的可动电极（5）。 根据本发明的加速度传感器的一对电极中的电容变化增强。 根据本发明的加速度传感器结构能够基于旋转运动和在电容加速度传感器设计中具有良好性能的测量加速度来改善一对电极的电容灵敏度。

公开(公告)号：US20040050162A1

公开(公告)日：2004-03-18

申请号：US10358691

申请日：2003-02-05

Inventor： Tetsuo Fujii ,  Masahito Imai

IPC: H01L029/82

CPC classification number: B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

Abstract: A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

Abstract translation: 具有S / N比提高的新结构的半导体机械传感器。 在硅衬底1的中心部分，形成包括梁结构的凹部2。 在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。 在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。 在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。 对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

公开(公告)号：US06684699B1

公开(公告)日：2004-02-03

申请号：US09660676

申请日：2000-09-13

Applicant: Daniel Lapadatu ,  Terju Kvisteroy ,  Henrik Jakobsen

Inventor： Daniel Lapadatu ,  Terju Kvisteroy ,  Henrik Jakobsen

IPC: G01P1510

CPC classification number: B81B7/0048 ,  B81B3/0072 ,  B81B2201/032 ,  B81B2203/0109 ,  G01C19/5755 ,  G01P1/006 ,  G01P15/0802 ,  G01P2015/0828 ,  Y10S73/01

Abstract: A pedestal structure and its fabrication method stress release assembly of micromechanical sensors, in particular acceleration sensor, angular rate sensors, inclination sensors or angular acceleration. At least one silicon seismic mass is used as sensing element. The at least one silicon seismic mass is joined to the silicon frame via at least one assembly pedestal, the surface of which is bonded to a covering wafer, either glass or silicon.

Abstract translation: 基座结构及其制造方法微机械传感器的应力释放组件，特别是加速度传感器，角速度传感器，倾斜传感器或角加速度。 至少有一个硅质地震块被用作感测元件。 所述至少一个硅抗震块经由至少一个组件基座接合到所述硅框架，所述组件基座的表面与玻璃或硅的覆盖晶片结合。

公开(公告)号：US20030229981A1

公开(公告)日：2003-12-18

申请号：US10171994

申请日：2002-06-17

Inventor： Geoffrey L. Mahon

IPC: H01H001/00 ,  H05K003/36 ,  G01R001/00 ,  G05F001/00 ,  B44C001/22

CPC classification number: G01P15/18 ,  G01P15/0802 ,  G01P15/123 ,  G01P15/125 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/49126 ,  Y10T29/49156

Abstract: A method of manufacturing a monolithic silicon acceleration sensor is disclosed. The monolithic silicon acceleration sensor is micromachined from silicon to form one or more sensor cells, each sensor cell having an inertial mass positioned by beam members fixed to a silicon support structure. A sandwiched etch-stop layer is formed between a first silicon wafer section and a second silicon wafer section. A first section of the inertia mass and beam members are formed by etching a U-shaped channel and a bar-shaped channel in the first wafer section of the sandwiched layer to the etch-stop layer. A second section of the inertial mass is formed by aligning a frame-shaped channel in the second wafer section with the U-shaped channel and the bar-shaped channel in the first section, and etching the frame-shaped channel to the etch-stop layer. After stripping exposed etch-stop layer, an inertial mass positioned by beam members fixed to a silicon support structure is formed. A first cover plate structure is bonded to a first surface of the silicon support structure.

Abstract translation: 公开了一种制造单片硅加速度传感器的方法。 单片硅加速度传感器从硅微加工以形成一个或多个传感器单元，每个传感器单元具有由固定到硅支撑结构的梁构件定位的惯性质量。 在第一硅晶片部分和第二硅晶片部分之间形成夹层蚀刻停止层。 通过将夹层的第一晶片部分中的U形通道和棒状通道蚀刻到蚀刻停止层来形成惯性质量块和梁构件的第一部分。 惯性质量块的第二部分通过将第二晶片部分中的框状通道与第一部分中的U形通道和棒状通道对准而形成，并且将框形通道蚀刻到蚀刻停止 层。 在剥离暴露的蚀刻停止层之后，形成由固定到硅支撑结构上的梁构件定位的惯性质量块。 第一盖板结构结合到硅支撑结构的第一表面。

公开(公告)号：US06662658B2

公开(公告)日：2003-12-16

申请号：US10052713

申请日：2002-01-17

Applicant: Steven A. Foote

Inventor： Steven A. Foote

IPC: G01P1510

CPC classification number: B81B3/0051 ,  B81B2201/0235 ,  B81B2203/056 ,  B81B2203/058 ,  G01P15/097 ,  G01P2015/0828

Abstract: An apparatus and method for suspending two or more force-versus-displacement sensors for measuring displacement of a pendular structure relative to a frame structure, wherein a suspension structure includes the frame and pendular structures, the pendular structure having a base structure suspended from the frame structure for rotation about a first axis, a beam structure spaced away from the first axis, and a flexure suspending the beam structure from the base structure for rotation about a second axis that is substantially perpendicular to the first axis. The flexure suspending the beam structure from the base structure is positioned substantially intermediate between suspension positions of the force-versus-displacement sensors, and constrains the beam structure to motion substantially within the plane of the pendular structure.

公开(公告)号：US20030153116A1

公开(公告)日：2003-08-14

申请号：US10319174

申请日：2002-12-13

Inventor： L. Richard Carley ,  Suresh Santhanam ,  Hsu Yu-Nu

IPC: H01L021/00 ,  H01L021/30 ,  H01L021/76 ,  H01L021/46

CPC classification number: B81B7/0077 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C1/00936 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2203/0136 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0828

Abstract: This invention comprises a process for fabricating a MEMS microstructure in a sealed cavity wherein the etchant entry holes are created as a by-product of the fabrication process without an additional step to etch holes in the cap layer. The process involves extending the layers of sacrificial material past the horizontal boundaries of the cap layer. The cap layer is supported by pillars formed by a deposition in holes etched through the sacrificial layers, and the etchant entry holes are formed when the excess sacrificial material is etched away, leaving voids between the pillars supporting the cap.

Abstract translation: 本发明包括一种在密封空腔中制造MEMS微结构的方法，其中蚀刻剂入口孔作为制造工艺的副产品而产生，而没有额外的步骤来蚀刻盖层中的孔。 该方法涉及将牺牲材料层延伸超过盖层的水平边界。 盖层由通过牺牲层蚀刻的孔中的沉积形成的柱支撑，并且当多余的牺牲材料被蚀刻掉时形成蚀刻剂入口孔，从而在支撑盖的支柱之间留下空隙。

公开(公告)号：US06532824B1

公开(公告)日：2003-03-18

申请号：US09786944

申请日：2001-03-08

Applicant: Toru Ueno ,  Kazuya Mori ,  Tetsuo Yoshida

Inventor： Toru Ueno ,  Kazuya Mori ,  Tetsuo Yoshida

IPC: G01B716

CPC classification number: G01P15/125 ,  G01B7/22 ,  G01L1/142 ,  G01L1/144 ,  G01L1/148 ,  G01L3/106 ,  G01P2015/0814 ,  G01P2015/0828

Abstract: A capacitive strain sensor comprises a substrate (119) and a pair of interdigital electrode capacitors (209, 209A) formed on the substrate. A dielectric thick film (129) having a uniform thickness and made of a material the dielectric constant of which varies with strain is provided on an elastic body having a flat or curved surface on the substrate (119). A block (318) for preventing strain from being produced is secured to one end of the substrate (119); a weight (329) is secured to the other end. The capacitors (209, 209A) are formed by interdigitally arranging a pair of electrodes being parallel linear electrodes of linear conductors on the substrate.

Abstract translation: 电容式应变传感器包括基板（119）和形成在基板上的一对叉指电极电容器（209,209A）。 具有均匀厚度并由其介电常数随应变变化的材料制成的电介质厚膜（129）设置在基板（119）上具有平坦或弯曲表面的弹性体上。 用于防止产生应变的块（318）被固定到基板（119）的一端; 重物（329）固定在另一端。 电容器（209,209A）通过在基板上以直线方式布置成线状导体的平行线状电极的一对电极而形成。

公开(公告)号：US20030005767A1

公开(公告)日：2003-01-09

申请号：US10230458

申请日：2002-08-29

Inventor： Rand H. Hulsing II

IPC: G01P015/00

CPC classification number: G01P15/18 ,  F02G1/044 ,  F02G1/0445 ,  F16L37/24 ,  G01C19/56 ,  G01C19/5719 ,  G01C19/574 ,  G01P15/0802 ,  G01P15/097 ,  G01P2015/0828

Abstract: A triaxial sensor substrate is adapted for use in measuring the acceleration and angular rate of a moving body along three orthogonal axes. The triaxial sensor substrate includes three individual sensors that are arranged in the plane of the substrate at an angle of 120 degrees with respect to one another. Each sensor is formed from two accelerometers having their sensing axes canted at an angle with respect to the plane of the substrate and further being directed in opposite directions. The rate sensing axes thus lie along three orthogonal axes. In order to reduce or eliminate angular acceleration sensitivity, a two substrate configuration may be used. Each substrate includes three accelerometers that are arranged in the plane of the substrate at an angle of 120 degrees with respect to one another. The sensing axes of the accelerometers of the first substrate are canted at an angle with respect to the plane of the first substrate toward the central portion thereof so that they lie along three skewed axes. Similarly, the sensing axes of the accelerometers of the second substrate are canted at an angle with respect to the plane of the second substrate away from the central portion thereof so that they lie along same three but oppositely directed axes. The sensing axes of the first and second substrates are aligned to prevent angular acceleration sensitivity.

Abstract translation: 三轴传感器基板适用于沿三个正交轴测量移动体的加速度和角速度。 三轴传感器基板包括三个单独的传感器，它们相对于彼此以120度的角度布置在基板的平面中。 每个传感器由两个加速度计形成，其加速度传感器的感测轴相对于基板的平面倾斜一定角度，并进一步沿相反的方向。 速度检测轴因此位于三个正交轴上。 为了减少或消除角加速度灵敏度，可以使用两个基板构造。 每个衬底包括三个加速度计，它们以相对于彼此为120度的角度布置在衬底的平面中。 第一基板的加速度计的感测轴相对于第一基板的平面朝向其中央部分倾斜一定角度，使得它们沿三个倾斜轴线倾斜。 类似地，第二基板的加速度计的感测轴相对于第二基板的平面偏离其中心部分一角度倾斜，使得它们沿着相同的三个但相对定向的轴线。 对准第一和第二基板的感测轴线以防止角加速度灵敏度。

公开(公告)号：US20020170175A1

公开(公告)日：2002-11-21

申请号：US10178253

申请日：2002-06-24

Inventor： Robert Aigner ,  Florian Plotz ,  Sven Michaelis ,  Michael Brauer

IPC: H01R043/00 ,  H05K003/36

CPC classification number: B81B7/007 ,  B81C1/00888 ,  G01P1/023 ,  G01P2015/0828 ,  Y10T29/49126 ,  Y10T29/49155 ,  Y10T29/49204 ,  Y10T29/49222 ,  Y10T29/49798 ,  Y10T29/49813 ,  Y10T83/02 ,  Y10T83/0581

Abstract: A micromechanical structure is described which is disposed on a base body and requires protection from environmental influences by a covering body. Furthermore, electrical contacts are necessary for establishing contacts for the micromechanical structure. By skillfully carrying out a sawing-into operation and a sawing-through operation, it is possible to expose the electrical contact.

Abstract translation: 描述了一种微机械结构，其被布置在基体上并且需要保护以免受覆盖体的环境影响。 此外，为了建立微机械结构的触点，需要电触点。 通过巧妙地进行锯切操作和锯切操作，可以暴露电接触。