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11.
公开(公告)号:US20240009799A1
公开(公告)日:2024-01-11
申请号:US18035339
申请日:2021-10-05
发明人: Junichi UENO
IPC分类号: B24B37/22 , B24B37/08 , H01L21/306
CPC分类号: B24B37/22 , B24B37/08 , H01L21/30625
摘要: The present invention is a polishing pad having a polishing layer for polishing surface of a wafer and a double-sided tape for attaching the polishing layer to an upper turn table of a double-side polishing apparatus, wherein, the double-sided tape has a 90° peeling adhesive strength A of 2000 g/cm or more, and a ratio A/B of the 90° peeling adhesive strength A to a 180° peeling adhesive strength B of 1.05 or more, the double-sided tape has a base material, a polishing-layer-side adhesive layer to be attached to the polishing layer, and an upper-turn-table-side adhesive layer to be attached to the upper turn table, and total thickness of the polishing-layer-side adhesive layer and the upper-turn-table-side adhesive layer is 80 μm or less. This provides a polishing pad capable of suppressing deterioration of flatness of the wafer when performing double-side polishing of the wafer.
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公开(公告)号:US11824070B2
公开(公告)日:2023-11-21
申请号:US17089122
申请日:2020-11-04
发明人: Takao Abe , Tsuyoshi Ohtsuki
IPC分类号: H01L27/146 , C30B29/06
CPC分类号: H01L27/14616 , C30B29/06 , H01L27/14692 , H01L27/1462
摘要: The present invention is a silicon single crystal substrate for a solid-state image sensor obtained by slicing a silicon single crystal fabricated by a CZ method, where the silicon single crystal substrate is a p-type silicon single crystal substrate whose main dopant is Ga, and the silicon single crystal substrate has a B concentration of 5×1014 atoms/cm3 or less. This provides a silicon single crystal substrate and a silicon epitaxial wafer for a solid-state image sensor that can suppress the residual image characteristics of a solid-state image sensor.
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公开(公告)号:US20230343890A1
公开(公告)日:2023-10-26
申请号:US18028581
申请日:2021-08-26
IPC分类号: H01L33/00
CPC分类号: H01L33/007
摘要: An epitaxial wafer for an ultraviolet light emitting device, including, a heat-resistant first support substrate, a planarization layer with a thickness of 0.5 to 3 μm on at least upper surface of the first support substrate, a group III nitride single crystal seed crystal layer with a thickness of 0.1 to 1.5 μm, bonds to upper surface of the planarization layer by bonding, on the seed crystal layer, an epitaxial layer including at least a first conductivity type cladding layer containing AlxGa1-xN (0.5
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公开(公告)号:US20230340694A1
公开(公告)日:2023-10-26
申请号:US18008495
申请日:2021-04-12
发明人: Yoshihiro KUBOTA , Minoru KAWAHARA , Masato YAMADA
IPC分类号: C30B29/40 , C30B31/22 , C30B23/02 , C30B25/18 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/24 , H01L21/762 , H01L21/02
CPC分类号: C30B29/403 , C30B31/22 , C30B23/02 , C30B25/18 , C23C16/308 , C23C16/345 , C23C16/402 , C23C16/24 , H01L21/76254 , H01L21/0242 , H01L21/02488 , H01L21/02389
摘要: A substrate for group III nitride epitaxial growth and a method for producing the same. The substrate for group III nitride epitaxial growth includes: a supporting substrate having a structure in which a core consisting of nitride ceramics is wrapped in an encapsulating layer having a thickness of between 0.05 μm and 1.5 μm, inclusive; a planarizing layer provided on an upper surface of the supporting substrate, the planarizing layer having a thickness of between 0.5 μm and 3.0 μm, inclusive; and a seed crystal layer made of a single crystal of a group III nitride, the seed crystal layer being provided on an upper surface of the planarizing layer and having a thickness of between 0.1 μm and 1.5 μm, inclusive.
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公开(公告)号:US20230290835A1
公开(公告)日:2023-09-14
申请号:US18013618
申请日:2021-07-12
CPC分类号: H01L29/2003 , H01L29/04 , H01L21/02433 , H01L21/02458 , H01L21/02381
摘要: The present invention is a nitride semiconductor wafer, including: a silicon single-crystal substrate; and a device layer composed of a nitride semiconductor above the silicon single-crystal substrate, wherein the silicon single-crystal substrate is a CZ silicon single-crystal substrate, and has a resistivity of 1000 Ω·cm or more, an oxygen concentration of 5.0×1016 atoms/cm3 (JEIDA) or more and 2.0×1.017 atoms/cm3 (JEIDA) or less, and a nitrogen concentration of 5.0×1014 atoms/cm3 or more. This provides a nitride semiconductor wafer that hardly causes plastic deformation even using a high-resistant low-oxygen silicon single-crystal substrate produced by the CZ method, which is suitably used for a high-frequency device, and that can reduce warpage of the substrate.
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16.
公开(公告)号:US20230212782A1
公开(公告)日:2023-07-06
申请号:US18019916
申请日:2021-07-23
发明人: Weifeng QU , Shizuo IGAWA , Ken SUNAKAWA
摘要: A method for manufacturing a silicon single-crystal substrate having a carbon diffusion layer on a surface, proximity gettering ability, and high strength near the surface, and hardly generating dislocation or extending dislocation, includes: a step of adhering carbon on a surface of a silicon single-crystal substrate by an RTA treatment of the silicon single-crystal substrate in a carbon-containing gas atmosphere; a step of forming a 3C-SiC single-crystal film on the surface of the silicon single-crystal substrate by reacting the carbon and the silicon single-crystal substrate; a step of oxidizing the 3C-SiC single-crystal film to be an oxide film and diffusing carbon inward the silicon single-crystal substrate by an RTA treatment of the silicon single-crystal substrate on which the 3C-SiC single-crystal film is formed, the RTA treatment being performed in an oxidative atmosphere; and a step of removing the oxide film.
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17.
公开(公告)号:US20230207399A1
公开(公告)日:2023-06-29
申请号:US17920937
申请日:2021-03-03
发明人: Tsuyoshi OHTSUKI , Tatsuo ABE
IPC分类号: H01L21/66 , H01L21/311 , G01N21/3563 , G01N23/20
CPC分类号: H01L22/12 , H01L21/31116 , G01N21/3563 , G01N23/20 , G01N2021/3595
摘要: A method for dry-etching a semiconductor substrate having an oxide film, including: evaluating a film quality of the oxide film and determining a time for performing the dry-etching on a basis of results of the evaluation in advance. This provides a method for controlling the etching amount of an oxide film accurately and suppressing over-etching and insufficient etching without influence from variation in the film quality of the oxide film when dry-etching the oxide film on the surface of the semiconductor substrate.
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公开(公告)号:US20230178390A1
公开(公告)日:2023-06-08
申请号:US17924248
申请日:2021-03-02
发明人: Kuniaki OONISHI
IPC分类号: H01L21/67 , H01L21/306
CPC分类号: H01L21/6708 , H01L21/30604
摘要: A method for etching a silicon wafer, the method including a spin etching step in which while an acid etching solution is supplied to a front or back side surface of a silicon wafer through a supply nozzle, the silicon wafer is rotated to expand a supply range of the acid etching solution to perform acid etching throughout the front or back side surface of the silicon wafer. Before the rotation of the silicon wafer is started, an acid mixture containing at least hydrofluoric acid and nitric acid is added dropwise within an impinging jet area which is located immediately below the supply nozzle, and in which the acid etching solution supplied through the supply nozzle impinges on the surface of the silicon wafer. After the impinging jet area is covered with the acid mixture, the rotation of the silicon wafer is started to perform the spin etching step.
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公开(公告)号:US20230154742A1
公开(公告)日:2023-05-18
申请号:US17916939
申请日:2021-02-18
发明人: Kensaku IGARASHI
IPC分类号: H01L21/02
CPC分类号: H01L21/02057 , H01L21/02013
摘要: A method for cleaning a semiconductor wafer to clean a semiconductor wafer after polishing, including: performing a first ozone-water treatment step of cleaning the polished semiconductor wafer with ozone water to form an oxide film; performing a brush cleaning step of brush-cleaning the semiconductor wafer with carbonated water after the first ozone-water treatment step; and then performing a second ozone-water treatment step including cleaning the semiconductor wafer with hydrofluoric acid to remove the oxide film, followed by cleaning with ozone water to form an oxide film again. This second ozone-water treatment step is performed one or more times. The method for cleaning a semiconductor wafer achieves cleaning level equivalent to that with SC1, reduces or prevents defect generation on a wafer surface and surface roughness degradation which would otherwise occur when SC1 is used, and also results in cost reduction and environmental load reduction.
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公开(公告)号:US20230137813A1
公开(公告)日:2023-05-04
申请号:US17917781
申请日:2021-02-08
发明人: Masaaki OSEKI , Tatsuo ABE , Michito SATO
IPC分类号: B24B37/04 , B24B37/005 , H01L21/306
摘要: A method for polishing a wafer in order to correct a shape of a polished wafer subjected to polishing, by pressing the wafer to a polishing pad while continuously supplying a composition for polishing containing water to perform correction-polishing, the method including the steps of: measuring the shape of the polished wafer before performing the correction-polishing; determining, in accordance with the measured shape of the polished wafer, a kind and concentration of a surfactant to be contained in the composition for polishing; and performing the correction-polishing while supplying the composition for polishing adjusted on a basis of the determined kind and concentration of the surfactant. This provides a method and apparatus for polishing a wafer that make it possible to reduce, in the latter polishing step, a variation in the shape of the wafer that occurred in a preceding polishing step.
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