POLISHING PAD, DOUBLE-SIDE POLISHING DEVICE, AND DOUBLE-SIDE POLISHING METHOD FOR WAFER

    公开(公告)号:US20240009799A1

    公开(公告)日:2024-01-11

    申请号:US18035339

    申请日:2021-10-05

    发明人: Junichi UENO

    摘要: The present invention is a polishing pad having a polishing layer for polishing surface of a wafer and a double-sided tape for attaching the polishing layer to an upper turn table of a double-side polishing apparatus, wherein, the double-sided tape has a 90° peeling adhesive strength A of 2000 g/cm or more, and a ratio A/B of the 90° peeling adhesive strength A to a 180° peeling adhesive strength B of 1.05 or more, the double-sided tape has a base material, a polishing-layer-side adhesive layer to be attached to the polishing layer, and an upper-turn-table-side adhesive layer to be attached to the upper turn table, and total thickness of the polishing-layer-side adhesive layer and the upper-turn-table-side adhesive layer is 80 μm or less. This provides a polishing pad capable of suppressing deterioration of flatness of the wafer when performing double-side polishing of the wafer.

    METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL SUBSTRATE AND SILICON SINGLE-CRYSTAL SUBSTRATE

    公开(公告)号:US20230212782A1

    公开(公告)日:2023-07-06

    申请号:US18019916

    申请日:2021-07-23

    摘要: A method for manufacturing a silicon single-crystal substrate having a carbon diffusion layer on a surface, proximity gettering ability, and high strength near the surface, and hardly generating dislocation or extending dislocation, includes: a step of adhering carbon on a surface of a silicon single-crystal substrate by an RTA treatment of the silicon single-crystal substrate in a carbon-containing gas atmosphere; a step of forming a 3C-SiC single-crystal film on the surface of the silicon single-crystal substrate by reacting the carbon and the silicon single-crystal substrate; a step of oxidizing the 3C-SiC single-crystal film to be an oxide film and diffusing carbon inward the silicon single-crystal substrate by an RTA treatment of the silicon single-crystal substrate on which the 3C-SiC single-crystal film is formed, the RTA treatment being performed in an oxidative atmosphere; and a step of removing the oxide film.

    METHOD FOR ETCHING SILICON WAFER
    18.
    发明公开

    公开(公告)号:US20230178390A1

    公开(公告)日:2023-06-08

    申请号:US17924248

    申请日:2021-03-02

    发明人: Kuniaki OONISHI

    IPC分类号: H01L21/67 H01L21/306

    CPC分类号: H01L21/6708 H01L21/30604

    摘要: A method for etching a silicon wafer, the method including a spin etching step in which while an acid etching solution is supplied to a front or back side surface of a silicon wafer through a supply nozzle, the silicon wafer is rotated to expand a supply range of the acid etching solution to perform acid etching throughout the front or back side surface of the silicon wafer. Before the rotation of the silicon wafer is started, an acid mixture containing at least hydrofluoric acid and nitric acid is added dropwise within an impinging jet area which is located immediately below the supply nozzle, and in which the acid etching solution supplied through the supply nozzle impinges on the surface of the silicon wafer. After the impinging jet area is covered with the acid mixture, the rotation of the silicon wafer is started to perform the spin etching step.

    METHOD FOR CLEANING SEMICONDUCTOR WAFER
    19.
    发明公开

    公开(公告)号:US20230154742A1

    公开(公告)日:2023-05-18

    申请号:US17916939

    申请日:2021-02-18

    发明人: Kensaku IGARASHI

    IPC分类号: H01L21/02

    CPC分类号: H01L21/02057 H01L21/02013

    摘要: A method for cleaning a semiconductor wafer to clean a semiconductor wafer after polishing, including: performing a first ozone-water treatment step of cleaning the polished semiconductor wafer with ozone water to form an oxide film; performing a brush cleaning step of brush-cleaning the semiconductor wafer with carbonated water after the first ozone-water treatment step; and then performing a second ozone-water treatment step including cleaning the semiconductor wafer with hydrofluoric acid to remove the oxide film, followed by cleaning with ozone water to form an oxide film again. This second ozone-water treatment step is performed one or more times. The method for cleaning a semiconductor wafer achieves cleaning level equivalent to that with SC1, reduces or prevents defect generation on a wafer surface and surface roughness degradation which would otherwise occur when SC1 is used, and also results in cost reduction and environmental load reduction.

    METHOD AND APPARATUS FOR POLISHING WAFER

    公开(公告)号:US20230137813A1

    公开(公告)日:2023-05-04

    申请号:US17917781

    申请日:2021-02-08

    摘要: A method for polishing a wafer in order to correct a shape of a polished wafer subjected to polishing, by pressing the wafer to a polishing pad while continuously supplying a composition for polishing containing water to perform correction-polishing, the method including the steps of: measuring the shape of the polished wafer before performing the correction-polishing; determining, in accordance with the measured shape of the polished wafer, a kind and concentration of a surfactant to be contained in the composition for polishing; and performing the correction-polishing while supplying the composition for polishing adjusted on a basis of the determined kind and concentration of the surfactant. This provides a method and apparatus for polishing a wafer that make it possible to reduce, in the latter polishing step, a variation in the shape of the wafer that occurred in a preceding polishing step.