Abstract:
The present invention discloses a printing device. The printing device of the present invention may include a communication element capable of communicating with an external host utilizing a plurality of telecommunication network technologies to receive a file sent from the external host to the device, a printing element electrically coupled to the communication element to output an image file, and an audio outputting element electrically coupled to the communication element to output an audio file, wherein the communication element identifies a file type of the file received from the external host and selectively sends the file to the printing element or the audio outputting element.
Abstract:
A light-emitting element, comprises: a first active layer, generating a first light comprising a first dominant wavelength, wherein the first active layer comprises a first quantum well comprising a first quantum-well band gap and a second quantum well comprising a second quantum-well band gap, and the first quantum well and the second quantum well are alternately stacked to form the first active layer, wherein a difference between the first quantum-well band gap and the second quantum-well band gap is between 0.06eV and 0.1eV, and each of the first quantum-well and the second quantum-well is devoid of a barrier; and a second active layer on the first active layer, generating a second light comprising a second dominant wavelength; wherein a difference between the first dominant wavelength and the second dominant wavelength is 150nm to 220nm.
Abstract:
A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate. The metal layer is located on the gate dielectric layer. The titanium aluminum nitride metal layer is located on the metal layer.
Abstract:
A power supply system with an automatic transfer function includes a main-power-loop apparatus, a backup-power-loop apparatus, and a control unit. The main-power-loop apparatus has a first primary relay switch and a first SCR switch. The backup-power-loop apparatus has a second primary relay switch and a second SCR switch. The control unit turns on the first primary relay switch and the first SCR switch when a main power source can normally supply power, thus supplying power to a load via the main-power-loop apparatus by the main power source. The control unit turns on the second primary relay switch and the second SCR switch when the main power source cannot normally supply power, thus supplying power to the load via the backup-power-loop apparatus by a backup power source.
Abstract:
A method for manufacturing TSVs, wherein the method comprises several steps as follows: A stack structure having a substrate and an ILD layer (inter layer dielectric layer) is provided, in which an opening penetrating through the ILD layer and further extending into the substrate is formed. After an insulator layer and a metal barrier layer are formed on the stack structure and the sidewalls of the opening, a top metal layer is then formed on the stack structure to fulfill the opening. A first planarization process stopping on the barrier layer is conducted to remove a portion of the top metal layer. A second planarization process stopping on the ILD layer is subsequently conducted to remove a portion of the metal barrier layer, a portion of the insulator layer and a portion of the top metal layer, wherein the second planarization process has a polishing endpoint determined by a light interferometry or a motor current.
Abstract:
A method of reading an eFuse in a column of eFuse memory cells includes electrically disconnecting a first end of the eFuse from a first electrical path. A second electrical path between a second end of the eFuse and a node is activated to bypass a third electrical path, where the third electrical path includes a diode device between the second end of the eFuse and the node. A footer coupled with the node is turned on.
Abstract:
A word line driver including a control switch configured to receive a control signal, where the control switch is between a first node configured to receive an operating voltage signal and a second node configured to determine an output of the word line driver. The word line driver further includes a cross-coupled amplifier electrically connected to the second node. The word line driver further includes at least one inverter electrically connected to the cross-coupled amplifier. A semiconductor device including the word line driver and a memory array including at least one electronic fuse.
Abstract:
A computing device and an automobile controlling method stores identification information in an electronic tag of authorized communication devices and a memory of the computing device. The identification information of an electronic tag of a communication device is obtained and a door of an automobile is unlocked if the obtained identification information matches identification information stored in the memory.
Abstract:
A lamp device includes: a battery housing receiving a battery set and a circuit board; a lamp casing enclosing and connected movably to the battery housing such that the lamp casing is movable relative to the battery housing in an axial direction; an LED lighting unit mounted in and connected fixedly to the lamp casing, and disposed spacedly above the circuit board; and a power switch mounted on the circuit board and connected electrically between the LED lighting unit and the battery set. The power switch is actuated in response to movement of the LED lighting unit toward the circuit board by press of the lamp casing to switch from a current one of power-on and power-off states to the other one of the power-on and power-off states.
Abstract:
The embodiments of methods and structures disclosed herein provide mechanisms of forming and programming a non-salicided polysilicon fuse. The non-salicided polysilicon fuse and a programming transistor form a one-time programmable (OTP) memory cell, which can be programmed with a low programming voltage.