公开(公告)号：US6043607A

公开(公告)日：2000-03-28

申请号：US991749

申请日：1997-12-16

Applicant: Craig A. Roderick

Inventor： Craig A. Roderick

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32082 ,  H01J37/32165 ,  H05H1/46

Abstract: A method and apparatus for generating a complex waveform and coupling the waveform to a reaction chamber of a semiconductor wafer processing system using a power amplifier. Specifically, the apparatus includes a complex waveform generator coupled to a high-power amplifier. The high-power amplifier is coupled to one or more frequency selective matching networks which select bands of RF signal to be coupled to plasma excitation circuit within the semiconductor wafer processing system.

Abstract translation: 一种用于产生复杂波形并将波形耦合到使用功率放大器的半导体晶片处理系统的反应室的方法和装置。 具体地，该装置包括耦合到大功率放大器的复合波形发生器。 高功率放大器耦合到一个或多个频率选择匹配网络，其选择要耦合到半导体晶片处理系统内的等离子体激励电路的RF信号频带。

公开(公告)号：US6036877A

公开(公告)日：2000-03-14

申请号：US648256

申请日：1996-05-13

Applicant: Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

Inventor： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

IPC: H01L21/302 ,  C23C16/517 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/683 ,  H05H1/00

CPC classification number: H01J37/32871 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382

Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

公开(公告)号：US5574410A

公开(公告)日：1996-11-12

申请号：US336873

申请日：1994-11-09

Applicant: Kenneth S. Collins ,  John Trow ,  Craig A. Roderick ,  Jay D. Pinson, II ,  Douglas A. Buchberger, II ,  Robert P. Hartlage ,  Viktor Shel

Inventor： Kenneth S. Collins ,  John Trow ,  Craig A. Roderick ,  Jay D. Pinson, II ,  Douglas A. Buchberger, II ,  Robert P. Hartlage ,  Viktor Shel

IPC: H01F21/02 ,  H01F29/14 ,  H01J37/32 ,  H01L21/311 ,  H03H7/38 ,  H03H7/40 ,  H03H11/30 ,  H03J3/22 ,  H05H1/46

CPC classification number: H01J37/32183 ,  H01F29/146 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H03H11/30 ,  H03H7/40 ,  H05H1/46 ,  H01F2029/143

Abstract: The disclosure discusses impedance matching circuits based on parallel-resonant L-C tank circuits, and describes a low-loss design for an adjustable inductance element suitable for use in these parallel tank circuits. The application of an impedance matching circuit to a plasma process is also disclosed; in this context, a local impedance transformation circuit is used to improve power transfer to the plasma source antenna.

公开(公告)号：US5210466A

公开(公告)日：1993-05-11

申请号：US852826

申请日：1992-03-13

Applicant: Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

Inventor： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

IPC: C23C16/509 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32174 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H05H1/46 ,  H05K2201/10015 ,  H05K2201/10689

Abstract: A plasma processing reactor is disclosed which incorporates an integral co-axial transmission line structure that effects low loss, very short transmission line coupling of ac power to the plasma chamber and therefore permits the effective use of VHF/UHF frequencies for generating a plasma. The use of VHF/UHF frequencies within the range 50-800 megahertz provides commercially viable processing rates (separate and simultaneous etching and deposition) and substantial reduction in sheath voltages compared to conventional frequencies such as 13.56 MHz. As a result, the probability of damaging electrically sensitive small geometry devices is reduced.

Abstract translation: 公开了一种等离子体处理反应器，其包括整体的同轴传输线结构，其将低功率损耗，非常短的传输线耦合到等离子体室，因此允许有效地使用VHF / UHF频率来产生等离子体。 在常规频率（如13.56 MHz）下，VHF / UHF频率在50-800兆赫兹范围内的使用提供了商业上可行的处理速率（分离和同步蚀刻和沉积）和皮套电压的显着降低。 结果，减少了电敏感小型几何装置的损坏概率。

公开(公告)号：US06518195B1

公开(公告)日：2003-02-11

申请号：US09504312

申请日：2000-02-15

Applicant: Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

Inventor： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

IPC: H01L213065

CPC classification number: H01J37/32871 ,  C23C16/507 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract translation: 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到10晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，以及蚀刻工艺沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US06365063B2

公开(公告)日：2002-04-02

申请号：US09350234

申请日：1999-07-09

Applicant: Kenneth S Collins ,  Michael Rice ,  Farahmand E Askarinam ,  Douglas A Buchberger, Jr. ,  Craig A Roderick

Inventor： Kenneth S Collins ,  Michael Rice ,  Farahmand E Askarinam ,  Douglas A Buchberger, Jr. ,  Craig A Roderick

IPC: C23F100

CPC classification number: H01J37/32458 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing Rf power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.

Abstract translation: 在包括反应器室的等离子体反应器中，用于在处理期间将工件保持在室内的工件支撑件和感应天线，靠近室壁的窗口电极，天线和壁相邻地定位，窗口电极可操作为 （a）容纳RF功率的电容电极，用于将等离子体源功率电容耦合到腔室中，以及（b）将来自所述天线的Rf功率从所述天线传递到腔室中以将等离子体源功率感应耦合到腔室中的窗口电极。

公开(公告)号：US6068784A

公开(公告)日：2000-05-30

申请号：US41118

申请日：1993-04-01

Applicant: Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

Inventor： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

IPC: C23C16/507 ,  H01L21/311 ,  B44C1/22 ,  B28B1/02

CPC classification number: H01J37/32458 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32522 ,  H01L21/31116 ,  H01F2029/143

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Abstract translation: 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US5572170A

公开(公告)日：1996-11-05

申请号：US518014

申请日：1995-08-22

Applicant: Kenneth S. Collins ,  John Trow ,  Craig A. Roderick ,  Jay D. Pinson, II ,  Douglas A. Buchberger, II ,  Robert P. Hartlage ,  Viktor Shel

Inventor： Kenneth S. Collins ,  John Trow ,  Craig A. Roderick ,  Jay D. Pinson, II ,  Douglas A. Buchberger, II ,  Robert P. Hartlage ,  Viktor Shel

IPC: H01F21/02 ,  H01F29/14 ,  H01J37/32 ,  H01L21/311 ,  H03H7/38 ,  H03H7/40 ,  H03H11/30 ,  H03J3/22 ,  H05H1/46 ,  H01P5/08

CPC classification number: H01J37/32183 ,  H01F29/146 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H03H11/30 ,  H03H7/40 ,  H05H1/46 ,  H01F2029/143

Abstract: A plasma processing system including a plasma processing chamber; an antenna circuit including a source antenna positioned relative to the processing chamber so as to couple energy into a plasma within the chamber during processing, the antenna circuit having a first terminal and a second terminal with the source antenna electrically coupled between the first and second terminals; and a local impedance transforming network connected to the antenna circuit, the local impedance transforming network including a first capacitor connected between the first terminal and a grounded node, and a second capacitor connected between the second terminal and the grounded node.

Abstract translation: 一种等离子体处理系统，包括等离子体处理室; 天线电路包括相对于处理室定位的源天线，以便在处理期间将能量耦合到腔室内的等离子体中，天线电路具有第一端子和第二端子，源极天线电耦合在第一和第二端子之间 ; 以及连接到所述天线电路的局部阻抗变换网络，所述局部阻抗变换网络包括连接在所述第一端子和接地节点之间的第一电容器，以及连接在所述第二端子和所述接地节点之间的第二电容器。

公开(公告)号：US5539609A

公开(公告)日：1996-07-23

申请号：US137279

申请日：1993-10-14

Applicant: Kenneth S. Collins ,  John R. Trow ,  Joshua C.-W. Tsui ,  Craig A. Roderick ,  Nicolas J. Bright ,  Jeffrey Marks ,  Tetsuya Ishikawa ,  Jian Ding

Inventor： Kenneth S. Collins ,  John R. Trow ,  Joshua C.-W. Tsui ,  Craig A. Roderick ,  Nicolas J. Bright ,  Jeffrey Marks ,  Tetsuya Ishikawa ,  Jian Ding

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01L21/6831

Abstract: An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.

公开(公告)号：US5350479A

公开(公告)日：1994-09-27

申请号：US984797

申请日：1992-12-02

Applicant: Kenneth S. Collins ,  John R. Trow ,  Joshua C. W. Tsui ,  Craig A. Roderick ,  Nicolas J. Bright ,  Jeffrey Marks ,  Tetsuya Ishikawa

Inventor： Kenneth S. Collins ,  John R. Trow ,  Joshua C. W. Tsui ,  Craig A. Roderick ,  Nicolas J. Bright ,  Jeffrey Marks ,  Tetsuya Ishikawa

IPC: H01L21/683 ,  H01L21/68

CPC classification number: H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

Abstract: An electrostatic chuck for holding an article to be processed in a plasma reaction chamber and comprising a metal pedestal coated with a layer of dielectric material in which is formed a cooling gas distribution system for passing and distributing a cooling gas between the upper surface of the layer and the article when supported on the pedestal. The gas distribution system comprises a plurality of intersecting grooves formed entirely in the upper surface of the layer with small gas distribution holes through intersections of the grooves over upper ends of cooling gas receiving holes formed in an underside of the pedestal.

Abstract translation: 一种用于在等离子体反应室中保持待处理物品的静电卡盘，包括涂覆有介电材料层的金属基座，其中形成有用于在层的上表面之间传递和分布冷却气体的冷却气体分配系统 和支撑在基座上的文章。 气体分配系统包括多个完全在层的上表面上形成的相交槽，该多个相交槽通过形成在基座的下侧的冷却气体接收孔的上端上的沟槽的交叉处形成小的气体分配孔。