公开(公告)号：US08471360B2

公开(公告)日：2013-06-25

申请号：US12760156

申请日：2010-04-14

Applicant: Franz Kreupl ,  Er-Xuan Ping ,  Jingyan Zhang ,  Huiwen Xu

Inventor： Franz Kreupl ,  Er-Xuan Ping ,  Jingyan Zhang ,  Huiwen Xu

IPC: H01L29/92

CPC classification number: H01L45/149 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/165 ,  H01L45/1691

Abstract: In a first aspect, a method of forming a metal-insulator-metal (“MIM”) stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided.

Abstract translation: 在第一方面中，提供了形成金属 - 绝缘体 - 金属（“MIM”）叠层的方法，所述方法包括：（1）在开口内形成具有开口的电介质材料和第一导电碳层; （2）在开口中形成间隔物; （3）在间隔件的侧壁上形成碳基开关材料; 和（4）在碳基开关材料上形成第二导电碳层。 介电材料中的开口的横截面积与间隔件侧壁上的碳基开关材料的横截面积的比率至少为5.许多其它方面。

公开(公告)号：US20120297801A1

公开(公告)日：2012-11-29

申请号：US13575941

申请日：2010-04-15

Applicant: Youhong Sun ,  Jiangpeng Zhao ,  Wei Guo ,  Huiwen Xu ,  Qinghua Wang ,  Chen Chen ,  Guosheng Li ,  Rui Jia ,  Jianguo Zhao ,  Jun Xue

Inventor： Youhong Sun ,  Jiangpeng Zhao ,  Wei Guo ,  Huiwen Xu ,  Qinghua Wang ,  Chen Chen ,  Guosheng Li ,  Rui Jia ,  Jianguo Zhao ,  Jun Xue

IPC: F25B49/00

CPC classification number: E21B36/001 ,  E21B21/01 ,  F25D17/02 ,  F25D29/00

Abstract: A forced cooling circulation system for drilling mud, which includes a refrigeration unit (1), a secondary refrigerant tank (4), a coaxial convection heat exchanger (12) for mud and a mud pond (17), is disclosed. The refrigeration unit (1) is in connection with the secondary refrigerant tank (4) and the coaxial convection heat exchanger (12) for mud via a pump (2), and the coaxial convection heat exchanger (12) for mud is in connection with the mud pond (17) via a pump (15) and pipelines. Heat exchange tubes of the coaxial convection heat exchanger (12) for mud are disposed as a double-layer structure or a multi-layer structure, and the inner heat exchange tubes (23) are mounted inside of the outer heat exchange tubes (25). The secondary refrigerant or the mud is circulated in the annular space between the inner heat exchange tubes (23) and the outer heat exchange tubes (25), and the mud or the secondary refrigerant is circulated in the inner tubes (23). The flow of the circulated mud is opposite to that of the circulated secondary refrigerant, and insulation material (24) is painted on the external wall of the outer tubes (25).

Abstract translation: 公开了一种用于钻井泥浆的强制冷却循环系统，其包括制冷单元（1），二次制冷剂罐（4），用于泥浆的同轴对流热交换器（12）和泥浆池（17）。 制冷单元（1）通过泵（2）与二级制冷剂罐（4）和用于泥浆的同轴对流热交换器（12）连接，用于泥浆的同轴对流热交换器（12）与 泥浆池（17）通过泵（15）和管道。 用于泥浆的同轴对流换热器（12）的换热管被设置为双层结构或多层结构，并且内部换热管（23）安装在外部换热管（25）的内部， 。 二次制冷剂或泥浆在内部热交换管23和外部热交换管25之间的环形空间中循环，泥浆或二次制冷剂在内管23中循环。 循环泥浆的流动与循环的二次制冷剂的流动相反，绝缘材料（24）涂在外管（25）的外壁上。

公开(公告)号：US08309415B2

公开(公告)日：2012-11-13

申请号：US12541078

申请日：2009-08-13

Applicant: Huiwen Xu ,  Er-Xuan Ping ,  Roy E. Scheuerlein

Inventor： Huiwen Xu ,  Er-Xuan Ping ,  Roy E. Scheuerlein

IPC: H01L21/336

CPC classification number: H01L45/12 ,  H01L27/10 ,  H01L27/1021 ,  H01L27/1052 ,  H01L27/24 ,  H01L45/16

Abstract: Methods of forming memory cells are disclosed which include forming a pillar above a substrate, the pillar including a steering element and a memory element, and performing one or more etches vertically through the memory element, but not the steering element, to form multiple memory cells that share a single steering element. Memory cells formed from such methods, as well as numerous other aspects are also disclosed.

Abstract translation: 公开了形成存储器单元的方法，其包括在衬底上形成柱，所述柱包括操纵元件和存储元件，并且通过存储元件而不是导向元件垂直地执行一个或多个蚀刻，以形成多个存储单元 共享一个转向元件。 还公开了由这些方法形成的存储单元以及许多其它方面。

公开(公告)号：US20120135603A1

公开(公告)日：2012-05-31

申请号：US13366916

申请日：2012-02-06

Applicant: Huiwen Xu ,  Yung-Tin Chen ,  Steven J. Radigan

Inventor： Huiwen Xu ,  Yung-Tin Chen ,  Steven J. Radigan

IPC: H01L21/311

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/0338 ,  H01L27/101 ,  H01L27/1021

Abstract: The embodiments generally relate to methods of making semiconductor devices, and more particularly, to methods for making semiconductor pillar structures and increasing array feature pattern density using selective or directional gap fill. The technique has application to a variety of materials and can be applied to making monolithic two or three-dimensional memory arrays.

Abstract translation: 实施例通常涉及制造半导体器件的方法，更具体地，涉及制造半导体柱结构的方法以及使用选择性或方向性间隙填充来增加阵列特征图案密度。 该技术可应用于各种材料，可应用于制作单片二维或三维存储阵列。

公开(公告)号：US08114765B2

公开(公告)日：2012-02-14

申请号：US12754602

申请日：2010-04-05

Applicant: Huiwen Xu ,  Yung-Tin Chen ,  Steven J. Radigan

Inventor： Huiwen Xu ,  Yung-Tin Chen ,  Steven J. Radigan

IPC: H01L21/44

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/0338 ,  H01L27/101 ,  H01L27/1021

Abstract: The embodiments generally relate to methods of making semiconductor devices, and more particularly, to methods for making semiconductor pillar structures and increasing array feature pattern density using selective or directional gap fill. The technique has application to a variety of materials and can be applied to making monolithic two or three-dimensional memory arrays.

Abstract translation: 实施例通常涉及制造半导体器件的方法，更具体地，涉及制造半导体柱结构的方法以及使用选择性或方向性间隙填充来增加阵列特征图案密度。 该技术可应用于各种材料，可应用于制作单片二维或三维存储阵列。

公开(公告)号：US20110254126A1

公开(公告)日：2011-10-20

申请号：US12760156

申请日：2010-04-14

Applicant: Franz Kreupl ,  Er-Xuan Ping ,  Jingyan Zhang ,  Huiwen Xu

Inventor： Franz Kreupl ,  Er-Xuan Ping ,  Jingyan Zhang ,  Huiwen Xu

IPC: H01L29/92 ,  H01L21/20

CPC classification number: H01L45/149 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/165 ,  H01L45/1691

Abstract: In a first aspect, a method of forming a metal-insulator-metal (“MIM”) stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided.

Abstract translation: 在第一方面中，提供了形成金属 - 绝缘体 - 金属（“MIM”）叠层的方法，所述方法包括：（1）在开口内形成具有开口的电介质材料和第一导电碳层; （2）在开口中形成间隔物; （3）在间隔件的侧壁上形成碳基开关材料; 和（4）在碳基开关材料上形成第二导电碳层。 介电材料中的开口的横截面积与间隔件侧壁上的碳基开关材料的横截面积的比率至少为5.许多其它方面。

公开(公告)号：US07851384B2

公开(公告)日：2010-12-14

申请号：US11751516

申请日：2007-05-21

Applicant: Yijun Liu ,  Huiwen Xu ,  Li-Qun Xia ,  Chad Peterson ,  Hichem M'Saad

Inventor： Yijun Liu ,  Huiwen Xu ,  Li-Qun Xia ,  Chad Peterson ,  Hichem M'Saad

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/022 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76832

Abstract: Methods are provided for processing a substrate comprising a bilayer barrier film thereon. In one aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and ultraviolet curing the dielectric layer. In another aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and curing the dielectric layer with an electron beam treatment.

Abstract translation: 提供了用于处理其上包含双层阻挡膜的基材的方法。 一方面，一种方法包括沉积第一阻挡层，在第一阻挡层上沉积第二阻挡层，在由第一阻挡层和第二阻挡层形成的双层阻挡膜上沉积介电层，以及紫外线固化电介质 层。 在另一方面，一种方法包括沉积第一阻挡层，在第一阻挡层上沉积第二阻挡层，在由第一阻挡层和第二阻挡层形成的双层阻挡膜上沉积介电层，以及使介电层 用电子束处理。

公开(公告)号：US07830698B2

公开(公告)日：2010-11-09

申请号：US12153872

申请日：2008-05-27

Applicant: Xiying Chen ,  Bing K. Yen ,  Dat Nguyen ,  Huiwen Xu ,  George Samachisa ,  Tanmay Kumar ,  Er-Xuan Ping

Inventor： Xiying Chen ,  Bing K. Yen ,  Dat Nguyen ,  Huiwen Xu ,  George Samachisa ,  Tanmay Kumar ,  Er-Xuan Ping

IPC: G11C11/00

CPC classification number: G11C11/56 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/0069 ,  G11C13/025 ,  G11C2013/009 ,  G11C2213/35 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/149 ,  H01L45/1616 ,  H01L45/1675

Abstract: A nonvolatile memory cell includes a steering element located in series with a storage element. The storage element includes a carbon material and the memory cell includes a rewritable cell having multiple memory levels.

Abstract translation: 非易失性存储单元包括与存储元件串联定位的转向元件。 存储元件包括碳材料，并且存储单元包括具有多个存储器级别的可重写单元。

公开(公告)号：US20100006811A1

公开(公告)日：2010-01-14

申请号：US12465315

申请日：2009-05-13

Applicant: Huiwen Xu ,  April D. Schricker ,  Er-Xuan Ping

Inventor： Huiwen Xu ,  April D. Schricker ,  Er-Xuan Ping

IPC: H01L47/00 ,  H01L21/205

CPC classification number: H01L27/101 ,  H01L21/02527 ,  H01L21/0262 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1616 ,  H01L51/0591

Abstract: In a first aspect, a memory cell is provided that includes (1) a first conductor; (2) a reversible resistance-switching element formed above the first conductor including (a) a carbon-based resistivity switching material; and (b) a carbon-based interface layer coupled to the carbon-based resistivity switching material; (3) a steering element formed above the first conductor; and (4) a second conductor formed above the reversible resistance-switching element and the steering element. Numerous other aspects are provided.

Abstract translation: 在第一方面，提供了一种存储单元，其包括：（1）第一导体; （2）形成在第一导体上方的可逆电阻切换元件，包括（a）碳基电阻率切换材料; 和（b）与碳基电阻率开关材料耦合的碳基界面层; （3）形成在所述第一导体上方的操纵元件; 和（4）形成在可逆电阻切换元件和操舵元件上方的第二导体。 提供了许多其他方面。

公开(公告)号：US20090093100A1

公开(公告)日：2009-04-09

申请号：US11869409

申请日：2007-10-09

Applicant: Li-Qun Xia ,  Huiwen Xu ,  Mihaela Balseanu ,  Meiyee (Maggie Le) Shek ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Li-Qun Xia ,  Huiwen Xu ,  Mihaela Balseanu ,  Meiyee (Maggie Le) Shek ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/76

CPC classification number: H01L21/76831 ,  C23C16/325 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76804 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76885 ,  H01L2221/1036

Abstract: The present invention generally provides a method for forming multilevel interconnect structures, including multilevel interconnect structures that include an air gap. One embodiment provides a method for forming conductive lines in a semiconductor structure comprising forming trenches in a first dielectric layer, wherein air gaps are to be formed in the first dielectric layer, depositing a conformal dielectric barrier film in the trenches, wherein the conformal dielectric barrier film comprises a low k dielectric material configured to serve as a barrier against a wet etching chemistry used in forming the air gaps in the first dielectric layer, depositing a metallic diffusion barrier film over the conformal low k dielectric layer, and depositing a conductive material to fill the trenches.

Abstract translation: 本发明通常提供一种用于形成多层互连结构的方法，包括包括气隙的多层互连结构。 一个实施例提供了一种用于在半导体结构中形成导线的方法，包括在第一介电层中形成沟槽，其中在第一介电层中形成气隙，在沟槽中沉积共形介电阻挡膜，其中保形介电阻挡层 薄膜包括低k电介质材料，其被配置为用作抵抗用于形成第一介电层中的气隙的湿蚀刻化学物质的阻挡层，在保形低k电介质层上沉积金属扩散阻挡膜，并将导电材料沉积到 填补沟渠。