公开(公告)号：US06734118B2

公开(公告)日：2004-05-11

申请号：US10252295

申请日：2002-09-23

申请人： Grant M. Kloster ,  David W. Staines ,  Jihperng Leu

发明人： Grant M. Kloster ,  David W. Staines ,  Jihperng Leu

IPC分类号： H01L2131

CPC分类号： H01L21/31058 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826

摘要： Treatment of dielectric material includes using a directed energy to break bonds in a dielectric material and a reactive gas to repair those bonds with an element of the reactive gas. The treated dielectric material may exhibit greater mechanical strength without a significantly greater dielectric constant. A treatment reactor including a directed energy source apparatus and a delivery mechanism to deliver the reactive gas is also described.

摘要翻译： 介电材料的处理包括使用定向能量破坏电介质材料和反应气体中的键，以修复与反应气体的元素的这些键。 经处理的介电材料可以表现出更大的机械强度而没有显着更大的介电常数。 还描述了包括定向能量源装置和用于输送反应性气体的输送机构的处理反应器。

公开(公告)号：US06479391B2

公开(公告)日：2002-11-12

申请号：US09746035

申请日：2000-12-22

申请人： Patrick Morrow ,  Jihperng Leu ,  Chia-Hong Jan

发明人： Patrick Morrow ,  Jihperng Leu ,  Chia-Hong Jan

IPC分类号： H01L21302

CPC分类号： H01L21/76835 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813

摘要： An improved method for making a semiconductor device is described. Initially, a structure is formed that includes first and second hard masking layers that cover a dielectric layer. A layer of photoresist is deposited and patterned to expose part of the second hard masking layer to define a via. That exposed part of the second hard masking layer is then etched. A second layer of photoresist is deposited and patterned to expose a second part of the second hard masking layer to define a trench. After etching the exposed second part of the second hard masking layer, a via and trench are etched into the dielectric layer, which are then filled with a conductive material.

公开(公告)号：US20140077691A1

公开(公告)日：2014-03-20

申请号：US13616442

申请日：2012-09-14

申请人： Jihperng Leu ,  Shu-Hao Syu ,  Hung-En Tu ,  Chih Wang

发明人： Jihperng Leu ,  Shu-Hao Syu ,  Hung-En Tu ,  Chih Wang

IPC分类号： H05B33/12

CPC分类号： H01L51/5256

摘要： An electroluminescent device includes: a substrate; an electroluminescent layered structure disposed over the substrate and including first and second electrode layers and an electroluminescent material layer disposed between the first and second electrode layers; and a moisture barrier layer in contact with the electroluminescent layered structure for preventing moisture from diffusing into the electroluminescent layered structure. The moisture barrier layer includes at least two inorganic films of a silicon-nitrogen-containing compound and at least one polymer film interposed between the inorganic films.

摘要翻译： 电致发光器件包括：衬底; 设置在所述基板上并且包括第一和第二电极层的电致发光层状结构和设置在所述第一和第二电极层之间的电致发光材料层; 以及与电致发光层状结构接触的防潮层，用于防止水分扩散到电致发光层状结构中。 防潮层包括至少两种含硅的化合物的无机膜和介于无机膜之间的至少一种聚合物膜。

公开(公告)号：US08299617B2

公开(公告)日：2012-10-30

申请号：US12763038

申请日：2010-04-19

申请人： Xiaorong Morrow ,  Jihperng Leu ,  Markus Kuhn ,  Jose A. Maiz

发明人： Xiaorong Morrow ,  Jihperng Leu ,  Markus Kuhn ,  Jose A. Maiz

IPC分类号： H01L29/40

CPC分类号： H01L21/76849 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76855 ,  H01L21/76888 ,  H01L21/76897 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described is a method and apparatus for forming interconnects with a metal-metal oxide electromigration barrier and etch-stop. In one embodiment of the invention, the method includes depositing a metal layer on the top of a planarized interconnect layer, the interconnect layer having an interlayer dielectric (ILD) with a top that is planar with the top of an electrically conductive interconnect. In one embodiment of the invention, the method includes reacting the metal layer with the ILD to form a metal oxide layer on the top of the ILD. At the same time, the metal layer will not be significantly oxidized by the electrically conductive interconnect, thus forming a metal barrier on the electrically conductive interconnect to improve electromigration performance. The metal barrier and metal oxide layer together comprise a protective layer. A second ILD may be subsequently formed on the protective layer, and the protective layer may act an etch-stop during a subsequent etch of the second ILD.

摘要翻译： 描述了用于与金属 - 金属氧化物电迁移屏障和蚀刻停止形成互连的方法和装置。 在本发明的一个实施例中，该方法包括在平坦化的互连层的顶部上沉积金属层，所述互连层具有层间电介质（ILD），其顶部与导电互连的顶部是平面的。 在本发明的一个实施方案中，该方法包括使金属层与ILD反应以在ILD的顶部形成金属氧化物层。 同时，金属层不会被导电互连显着地氧化，从而在导电互连上形成金属阻挡层以改善电迁移性能。 金属屏障和金属氧化物层一起包括保护层。 随后可以在保护层上形成第二ILD，并且保护层可以在随后的第二ILD蚀刻期间进行蚀刻停止。

公开(公告)号：US20100219529A1

公开(公告)日：2010-09-02

申请号：US12763038

申请日：2010-04-19

申请人： Xiaorong Morrow ,  Jihperng Leu ,  Markus Kuhn ,  Jose A. Maiz

发明人： Xiaorong Morrow ,  Jihperng Leu ,  Markus Kuhn ,  Jose A. Maiz

IPC分类号： H01L23/532

CPC分类号： H01L21/76849 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76855 ,  H01L21/76888 ,  H01L21/76897 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described is a method and apparatus for forming interconnects with a metal-metal oxide electromigration barrier and etch-stop. In one embodiment of the invention, the method includes depositing a metal layer on the top of a planarized interconnect layer, the interconnect layer having an interlayer dielectric (ILD) with a top that is planar with the top of an electrically conductive interconnect. In one embodiment of the invention, the method includes reacting the metal layer with the ILD to form a metal oxide layer on the top of the ILD. At the same time, the metal layer will not be significantly oxidized by the electrically conductive interconnect, thus forming a metal barrier on the electrically conductive interconnect to improve electromigration performance. The metal barrier and metal oxide layer together comprise a protective layer. A second ILD may be subsequently formed on the protective layer, and the protective layer may act an etch-stop during a subsequent etch of the second ILD.

摘要翻译： 描述了用于与金属 - 金属氧化物电迁移屏障和蚀刻停止形成互连的方法和装置。 在本发明的一个实施例中，该方法包括在平坦化的互连层的顶部上沉积金属层，所述互连层具有层间电介质（ILD），其顶部与导电互连的顶部是平面的。 在本发明的一个实施方案中，该方法包括使金属层与ILD反应以在ILD的顶部形成金属氧化物层。 同时，金属层不会被导电互连显着地氧化，从而在导电互连上形成金属阻挡层以改善电迁移性能。 金属屏障和金属氧化物层一起包括保护层。 随后可以在保护层上形成第二ILD，并且保护层可以在随后的第二ILD蚀刻期间进行蚀刻停止。

公开(公告)号：US07320935B2

公开(公告)日：2008-01-22

申请号：US10635892

申请日：2003-08-05

申请人： Jihperng Leu ,  Christopher D. Thomas

发明人： Jihperng Leu ,  Christopher D. Thomas

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/76877 ,  H01L23/5283 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention includes an embodiment that relates to method of forming an interconnect. The method includes the effect of reducing electromigration in a metallization. An article achieved by the inventive method includes a first interconnect disposed above a substrate; a first conductive diffusion barrier layer disposed above and on the first interconnect; an upper interconnect, that is either landed or unlanded and that is disposed above the first interconnect; and an upper conductive diffusion barrier layer disposed above and on the upper interconnect.

摘要翻译： 本发明包括涉及形成互连的方法的实施例。 该方法包括在金属化中减少电迁移的效果。 通过本发明方法实现的制品包括：设置在基板上方的第一互连; 第一导电扩散阻挡层，其设置在第一互连上方和第一互连上; 上部互连，其被落地或未上覆并且被布置在第一互连之上; 以及设置在上互连上方和上部互连上的上导电扩散阻挡层。

公开(公告)号：US20060138665A1

公开(公告)日：2006-06-29

申请号：US11023801

申请日：2004-12-27

申请人： Jihperng Leu ,  Jun He

发明人： Jihperng Leu ,  Jun He

IPC分类号： H01L23/48 ,  H01L21/31

CPC分类号： H01L21/02126 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/31155 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a mechanically robust dielectric film comprises depositing a dielectric film on a substrate and then inducing a compressive strain in a top surface of the dielectric film to form a compressive strained surface. The compressive strain may be induced using an ion implantation process that bombards the dielectric film with ions that become implanted in the top surface of the dielectric film. The damage caused during ion implantation, as well as the implanted ions themselves, causes an expansion of the top surface which induces a biaxial compressive residual stress, thereby forming a compressive strained surface. The compressive strain reduces the amount of surface flaws present on the top surface, thereby improving the toughness of the dielectric film. In addition, the ion implantation process may modify the plasticity of the top surface and reduce the likelihood of fracture mechanisms based on dislocation pileup for crack initiation.

摘要翻译： 用于形成机械坚固的电介质膜的方法包括在基底上沉积电介质膜，然后在电介质膜的顶表面中引起压缩应变以形成压缩应变表面。 可以使用离子注入工艺来诱导压缩应变，所述离子注入工艺用离子注入电介质膜的顶表面来轰击电介质膜。 离子注入过程中造成的损伤以及离子本身引起的顶表面的膨胀导致双轴压缩残余应力，从而形成压缩应变表面。 压缩应变减小了顶表面上存在的表面缺陷的量，从而提高了介电膜的韧性。 此外，离子注入工艺可以改变顶表面的可塑性，并降低基于位错堆积的断裂机理的可能性，用于裂纹开始。

公开(公告)号：US20060073416A1

公开(公告)日：2006-04-06

申请号：US11286783

申请日：2005-11-22

申请人： Jun He ,  Jihperng Leu

发明人： Jun He ,  Jihperng Leu

IPC分类号： G03C5/00

CPC分类号： H01L21/76831 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7682 ,  H01L21/76825 ,  H01L23/5222 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： In an embodiment, a trench is formed above a via from a photo resist (PR) trench pattern in a dielectric layer. The trench is defined by two sidewall portions and base portions. The base portions of the sidewalls are locally treated by a post treatment using the PR trench pattern as mask to enhance mechanical strength of portions of the dielectric layer underneath the base portions. Seed and barrier layers are deposited on the trench and the via. The trench and via are filled with a metal layer. In another embodiment, a trench is formed from a PR trench pattern in a dielectric layer. A pillar PR is deposited and etched to define a pillar opening having a pillar surface. The pillar opening is locally treated on the pillar surface by a post treatment to enhance mechanical strength of portion of the dielectric layer underneath the pillar surface.

公开(公告)号：US06924222B2

公开(公告)日：2005-08-02

申请号：US10301976

申请日：2002-11-21

申请人： Michael D. Goodner ,  Jihperng Leu

发明人： Michael D. Goodner ,  Jihperng Leu

IPC分类号： H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/02126 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/02362 ,  H01L21/31133 ,  H01L21/312 ,  H01L21/3124 ,  H01L21/3127 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer comprising a porous matrix, as well as a porogen in certain variations, is formed adjacent a sacrificial dielectric layer. Subsequent to other processing treatments, a portion of the sacrificial dielectric layer is decomposed and removed through a portion of the porous matrix using supercritical carbon dioxide leaving voids in positions previously occupied by portions of the sacrificial dielectric layer. The resultant structure has a desirably low k value as a result of the voids and materials comprising the porous matrix and other structures. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

公开(公告)号：US20050095743A1

公开(公告)日：2005-05-05

申请号：US10985506

申请日：2004-11-10

申请人： Grant Kloster ,  Jihperng Leu

发明人： Grant Kloster ,  Jihperng Leu

IPC分类号： H01L21/316 ,  H01L21/00

CPC分类号： H01L21/02145 ,  H01L21/02142 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/31695

摘要： A dielectric material is strengthened by bonding a metal component to the dielectric matrix. The metal component may be a metal oxide or metal oxide precursor. The metal component may be deposited on the substrate with the dielectric material, or sol-gel chemistry may be used and the liquid solution spin-coated on a substrate.

摘要翻译： 电介质材料通过将金属组分键合到电介质基体而得到增强。 金属成分可以是金属氧化物或金属氧化物前体。 金属组分可以用电介质材料沉积在衬底上，或者可以使用溶胶 - 凝胶化学，并将液体溶液旋涂在衬底上。