公开(公告)号：US20170110542A1

公开(公告)日：2017-04-20

申请号：US15208007

申请日：2016-07-12

Applicant: Jeongyun LEE ,  Kwang-Yong YANG ,  Keomyoung SHIN ,  Jinwook LEE ,  Yongseok LEE

Inventor： Jeongyun LEE ,  Kwang-Yong YANG ,  Keomyoung SHIN ,  Jinwook LEE ,  Yongseok LEE

IPC: H01L29/10 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/1033 ,  H01L21/823412 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/6653 ,  H01L29/6656

Abstract: A semiconductor device includes an isolation pattern on a substrate, the isolation pattern having a lower insulating pattern on the substrate, and a spacer to cover side surfaces of the lower insulating pattern, a vertical structure through the isolation pattern to contact the substrate, the vertical structure having a first semiconductor layer on the substrate, a lower end of the first semiconductor layer being at a lower level than a lower surface of the isolation pattern, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer, and a gate electrode crossing the vertical structure and extending over the isolation pattern.

公开(公告)号：US09013320B2

公开(公告)日：2015-04-21

申请号：US13922669

申请日：2013-06-20

Applicant: Sangdoo Ha ,  Jinwook Lee ,  Moonhyun Kim ,  Deoghyeon Kim

Inventor： Sangdoo Ha ,  Jinwook Lee ,  Moonhyun Kim ,  Deoghyeon Kim

IPC: G08B21/00 ,  H04B13/02 ,  G08B1/08 ,  G06F11/30 ,  G06F1/26 ,  H04M11/00 ,  G06F11/00 ,  G08B21/18 ,  G05B23/02 ,  G05B15/02 ,  H04L12/28

CPC classification number: G08B21/187 ,  G05B15/02 ,  G05B23/0205 ,  G05B23/027 ,  H04L12/282 ,  H04L12/2825 ,  H04L12/2834 ,  H04L2012/2841 ,  H04L2012/285

Abstract: Provided are a home appliance and its system. The home appliance include: an input unit for inputting driving information; a data unit for storing a diagnosis logic; a control unit for diagnosing a state of the home appliance and whether a failure occurs according to the diagnosis logic on the basis of product information including the driving information inputted from the input unit, operation information detected during an operation, and failure information occurring during an operation, in order to generate a diagnosis result including the operation information and the failure information, and encoding transmission information including predetermined data for a diagnosis, which are selected from the driving operation, and the diagnosis result and outputting the encoded transmission information; a modulator for converting the encoded transmission information; and a sound output unit for outputting the transmission information converted by the modulator as a sound including a plurality of frequencies.

Abstract translation: 提供家电及其系统。 家用电器包括：用于输入驾驶信息的输入单元; 用于存储诊断逻辑的数据单元; 控制单元，用于根据包括从输入单元输入的驾驶信息的产品信息，在操作期间检测到的操作信息以及在操作期间发生的故障信息，根据诊断逻辑来诊断家用电器的状态以及是否发生故障 操作，以产生包括操作信息和故障信息的诊断结果，以及编码包括从驾驶操作和诊断结果中选择的用于诊断的预定数据的传输信息并输出编码的传输信息; 用于转换编码的传输信息的调制器; 以及声音输出单元，用于将由调制器转换的发送信息作为包括多个频率的声音输出。

公开(公告)号：US20140015684A1

公开(公告)日：2014-01-16

申请号：US13933467

申请日：2013-07-02

Applicant: Sangdoo HA ,  Jinwook LEE ,  Moonhyun KIM ,  Deoghyeon KIM

Inventor： Sangdoo HA ,  Jinwook LEE ,  Moonhyun KIM ,  Deoghyeon KIM

IPC: G08B23/00

CPC classification number: G08B23/00 ,  H04L12/282 ,  H04L12/2825 ,  H04L27/28 ,  H04L2012/285

Abstract: Provided are a home appliance and a method of outputting a signal sound for diagnosis. The home appliance includes: a selection unit for receiving a diagnosis command on the home appliance from a user; a memory for storing diagnosis data on the home appliance; a controller for processing the diagnosis data stored in the memory in order to generate a packet according to a diagnosis command input through the selection unit; a conversion unit for generating a frame including a combination of symbols, which respectively correspond to four different carrier frequencies, on the basis of data constituting the packet, according to a Quadrature Frequency Shift Keying (QFSK) method.

Abstract translation: 提供家用电器和输出用于诊断的信号声音的方法。 家用电器包括：选择单元，用于从用户接收家用电器上的诊断命令; 用于在家用电器上存储诊断数据的存储器; 控制器，用于处理存储在存储器中的诊断数据，以便根据通过选择单元输入的诊断命令生成分组; 根据正交频移键控（QFSK）方法，基于构成分组的数据，生成包括分别对应于四个不同载波频率的符号的组合的帧的转换单元。

公开(公告)号：US08470635B2

公开(公告)日：2013-06-25

申请号：US12627443

申请日：2009-11-30

Applicant: Soonwoo Cha ,  Tim Minvielle ,  Jong Won Lee ,  Jinwook Lee

Inventor： Soonwoo Cha ,  Tim Minvielle ,  Jong Won Lee ,  Jinwook Lee

IPC: H01L21/00

CPC classification number: H01L45/128 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141 ,  H01L45/144 ,  H01L45/16

Abstract: Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.

公开(公告)号：US07939815B2

公开(公告)日：2011-05-10

申请号：US12346705

申请日：2008-12-30

Applicant: Jinwook Lee ,  Kuo-wei Chang ,  Jason S. Reid ,  Wim Y. Deweerd ,  Aleshandre M. Diaz

Inventor： Jinwook Lee ,  Kuo-wei Chang ,  Jason S. Reid ,  Wim Y. Deweerd ,  Aleshandre M. Diaz

IPC: H01L29/02

CPC classification number: H01L27/2427 ,  H01L45/04 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141 ,  H01L45/1641 ,  H01L45/1683 ,  Y10S438/90

Abstract: By making an ovonic threshold switch using a carbon interfacial layer having a thickness of less than or equal to ten percent of the thickness of the associated electrode, cycle endurance may be improved. In some embodiments, a glue layer may be used between the carbon and the chalcogenide of the ovonic threshold switch. The glue layer may be effective to improve adherence between carbon and chalcogenide.

Abstract translation: 通过使用具有小于或等于相关电极的厚度的百分之十的厚度的碳界面层进行超声波阈值开关，可以提高循环耐久性。 在一些实施方案中，可以在碳和阈值开关的硫族化物之间使用胶层。 胶层可以有效地改善碳和硫族化物之间的粘附性。

公开(公告)号：US07754516B2

公开(公告)日：2010-07-13

申请号：US12287073

申请日：2008-10-06

Applicant: Ming Jin ,  Ilya V. Karpov ,  Jinwook Lee ,  Narahari Ramanuja

Inventor： Ming Jin ,  Ilya V. Karpov ,  Jinwook Lee ,  Narahari Ramanuja

IPC: H01L45/00

CPC classification number: H01L45/16 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: A small critical dimension element, such as a heater for an ovonic unified memory, may be formed within a pore by using successive sidewall spacers. The use of at least two successive spacers enables the limitations imposed by lithography and the limitations imposed by bread loafing to be overcome to provide reduced critical dimension elements.

Abstract translation: 可以通过使用连续的侧壁间隔物在孔内形成小的关键尺寸元件，例如用于二次统一存储器的加热器。 使用至少两个连续的间隔物使得能够克服通过光刻所施加的限制，并且克服由面包变形所施加的限制以提供减小的临界尺寸元件。

公开(公告)号：US10043889B2

公开(公告)日：2018-08-07

申请号：US15723729

申请日：2017-10-03

Applicant: GeumJung Seong ,  JinWook Lee ,  Dohyoung Kim ,  Sungwoo Myung ,  Jisoo Oh ,  Yong-Ho Jeon

Inventor： GeumJung Seong ,  JinWook Lee ,  Dohyoung Kim ,  Sungwoo Myung ,  Jisoo Oh ,  Yong-Ho Jeon

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/311 ,  H01L29/49 ,  H01L29/40 ,  H01L21/3105

CPC classification number: H01L29/66545 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/32139 ,  H01L21/82345 ,  H01L21/823821 ,  H01L21/823842 ,  H01L29/401 ,  H01L29/4966

Abstract: The inventive concept relates to a semiconductor device and a method for fabricating the same. The semiconductor device comprises active patterns protruding from a substrate, an interlayer dielectric layer disposed on the substrate and including grooves exposing the active patterns, and gate electrodes in the grooves. The grooves include a first groove having a first width and a second groove having a second width greater than the first width. The gate electrodes include a first gate electrode in the first groove, and a second gate electrode in the second groove. Each of the first and second gate electrodes includes a first work function conductive pattern on a bottom surface and sidewalls of corresponding one of the first and second grooves, and a second work function conductive pattern on the first work function conductive pattern.

公开(公告)号：US20180143762A1

公开(公告)日：2018-05-24

申请号：US15634100

申请日：2017-06-27

Applicant: Chanha KIM ,  Hyunkyo OH ,  Oak-Ha KIM ,  Seungkyung RO ,  Jong-Nam BAEK ,  Donggi LEE ,  Jinwook LEE ,  Heewon LEE

Inventor： Chanha KIM ,  Hyunkyo OH ,  Oak-Ha KIM ,  Seungkyung RO ,  Jong-Nam BAEK ,  Donggi LEE ,  Jinwook LEE ,  Heewon LEE

IPC: G06F3/06 ,  G06N3/04 ,  G06N5/04 ,  G06N99/00

CPC classification number: G06F3/061 ,  G06F3/0614 ,  G06F3/0652 ,  G06F3/0653 ,  G06F3/0656 ,  G06F3/0679 ,  G06F11/00 ,  G06F12/0238 ,  G06F12/0246 ,  G06N3/04 ,  G06N3/063 ,  G06N5/04 ,  G06N99/005 ,  G11C11/5642

Abstract: A storage device includes a nonvolatile memory device, a buffer memory, a controller and a neuromorphic chip. The neuromorphic chip is configured to generate an access classifier based on the access result information and the access environment information. The controller is configured to perform first accesses to the nonvolatile memory device using the buffer memory and to collects the access result information and the access environment information of the first accesses in the buffer memory. The controller is configured to perform a second access of the nonvolatile memory device using the buffer memory. The controller is configured to obtain a prediction result of access parameters associated with the second access by using access environment information associated with the second access and the access classifier.

公开(公告)号：US20100163818A1

公开(公告)日：2010-07-01

申请号：US12346705

申请日：2008-12-30

Applicant: Jinwook Lee ,  Kuo-wei Chang ,  Jason S. Reid ,  Wim Y. Deweerd ,  Aleshandre M. Diaz

Inventor： Jinwook Lee ,  Kuo-wei Chang ,  Jason S. Reid ,  Wim Y. Deweerd ,  Aleshandre M. Diaz

IPC: H01L47/00 ,  H01L21/00

CPC classification number: H01L27/2427 ,  H01L45/04 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/141 ,  H01L45/1641 ,  H01L45/1683 ,  Y10S438/90

Abstract: By making an ovonic threshold switch using a carbon interfacial layer having a thickness of less than or equal to ten percent of the thickness of the associated electrode, cycle endurance may be improved. In some embodiments, a glue layer may be used between the carbon and the chalcogenide of the ovonic threshold switch. The glue layer may be effective to improve adherence between carbon and chalcogenide.

Abstract translation: 通过使用具有小于或等于相关电极的厚度的百分之十的厚度的碳界面层进行超声波阈值开关，可以提高循环耐久性。 在一些实施方案中，可以在碳和阈值开关的硫族化物之间使用胶层。 胶层可以有效地改善碳和硫族化物之间的粘附性。

公开(公告)号：US20100027332A1

公开(公告)日：2010-02-04

申请号：US12500867

申请日：2009-07-10

Applicant: Jinwook Lee ,  Jinyub Lee ,  Sangwon Hwang

Inventor： Jinwook Lee ,  Jinyub Lee ,  Sangwon Hwang

IPC: G11C16/04 ,  G11C16/06

CPC classification number: G11C16/0483 ,  G11C16/10 ,  G11C16/3454

Abstract: A method, device and system are provided for programming a flash memory device, the method including executing a bit line setup operation, and executing a channel pre-charge operation simultaneously with the bit line setup operation, the channel pre-charge operation including applying a channel pre-charge voltage to all word lines; and the device including a voltage generator disposed for providing each of a program voltage, a read voltage, a pass voltage, and a channel pre-charge voltage, a high-voltage switch connected to the voltage generator and disposed for switchably providing one of the program voltage, read voltage, pass voltage, or channel pre-charge voltage, and control logic connected to the high-voltage switch and disposed for simultaneously executing a bit line setup operation and a channel pre-charge operation, the channel pre-charge operation comprising controlling the high-voltage switch to apply the channel pre-charge voltage to both selected and unselected word lines of the device.

Abstract translation: 提供了一种用于对闪速存储器件进行编程的方法，装置和系统，所述方法包括执行位线设置操作，以及与位线设置操作同时执行通道预充电操作，所述通道预充电操作包括应用 通道预充电电压到所有字线; 并且所述装置包括被设置用于提供编程电压，读取电压，通过电压和通道预充电电压中的每一个的电压发生器，连接到电压发生器的高压开关，并且被设置用于可切换地提供 编程电压，读取电压，通过电压或通道预充电电压，以及连接到高压开关的控制逻辑，并被设置用于同时执行位线设置操作和通道预充电操作，通道预充电操作 包括控制所述高压开关以将所述通道预充电电压施加到所述器件的所选择的和未选择的字线。