Hydrophilic protective coatings for electroerosion printing
    14.
    发明授权
    Hydrophilic protective coatings for electroerosion printing 失效
    用于电腐蚀印刷的亲水保护涂层

    公开(公告)号:US4617579A

    公开(公告)日:1986-10-14

    申请号:US597148

    申请日:1984-04-05

    CPC classification number: B41M5/245 B41N3/03

    Abstract: Electroerosion recording materials for "direct negative" and "offset master" are provided with a surface protective coating of solid conductive lubricant dispersed in a hydrophilic, crosslinked polymeric matrix. The protective films are especially useful where direct offset masters are produced without removal of non-eroded lubricant film.The recording medium of this invention provides use as a defect-free "direct negative" and/or "direct offset master", without requiring the removal of the overlayer prior to use on the printing press. The protective coatings are applied from aqueous dispersions of polymer-particulate compositions and thus avoiding the use of organic solvents.

    Abstract translation: “直接负极”和“偏移母版”的电极记录材料设置有分散在亲水交联聚合物基体中的固体导电润滑剂的表面保护涂层。 保护膜特别适用于直接胶印主机而不去除未被侵蚀的润滑剂膜。 本发明的记录介质提供用作无缺陷的“直接负极”和/或“直接偏移主控”,而不需要在印刷机上使用之前去除覆盖层。 保护涂层由聚合物 - 颗粒组合物的水性分散体施加,从而避免使用有机溶剂。

    Semi-aqueous solvent cleaning of paste processing residue from substrates
    16.
    发明授权
    Semi-aqueous solvent cleaning of paste processing residue from substrates 失效
    半水溶剂清洗膏从底物处理残留物

    公开(公告)号:US06742530B2

    公开(公告)日:2004-06-01

    申请号:US10294236

    申请日:2002-11-14

    Abstract: A process of cleaning of objects that relate to semiconductor fabrication processes, such as, for example, conductive paste screening in the production of multilayer ceramic substrates and composite solder paste by stencil printing in electronic circuit assembly. Specifically, the process removes a metal/polymer composite paste from screening masks and associated paste making and processing equipment used in printing conductive metal pattern onto ceramic green sheet in the fabrication of semiconductor packaging substrates. The process also cleans solder paste residue from stencil printing equipment used in electronic module assembly surface mount technology for SMT discretes, solder column attachment, and BGA (Ball Grid Array) attachment on ceramic chip carrier or for screening solder paste onto printed circuit board. More particularly, paste residue is cleaned from metal, ceramic, and plastic substrates by a non-alkaline semi-aqueous cleaning method employing high boiling propylene glycol alkyl ether or mixtures of propylene glycol alkyl ether and propylene glycol solvents.

    Abstract translation: 清洁与半导体制造工艺有关的物体的过程,例如通过在电子电路组件中的模版印刷生产多层陶瓷衬底中的导电糊料和复合焊膏。 具体地说,该方法在半导体封装衬底的制造中,将金属/聚合物复合糊剂从掩模掩模和用于印刷导电金属图案的相关糊剂制造和加工设备移除到陶瓷生片上。 该工艺还可以将陶瓷芯片载体上用于SMT离散,焊料柱附件和BGA(球栅阵列)附件的电子模块组件表面贴装技术中使用的模版印刷设备的焊膏残留物清理或用于将焊膏屏蔽到印刷电路板上。 更具体地,通过使用高沸点丙二醇烷基醚或丙二醇烷基醚和丙二醇溶剂的混合物的非碱性半水洗涤方法,从金属,陶瓷和塑料基材中清除糊状残余物。

    Removal of soluble metals in waste water from aqueous cleaning and etching processes
    17.
    发明授权
    Removal of soluble metals in waste water from aqueous cleaning and etching processes 失效
    从水性清洗和蚀刻工艺中去除废水中的可溶性金属

    公开(公告)号:US06426007B1

    公开(公告)日:2002-07-30

    申请号:US09301566

    申请日:1999-04-29

    CPC classification number: C02F1/42 B01J39/04 B01J41/05 Y10S210/912 B01J41/04

    Abstract: This invention provides a method for treating waste water containing organic bases such as tetramethyl ammonium hydroxide and dissolved metals such as Mo, W, Cu and Ni which are generated from mask cleaning and Mo etching processes. The organic base along with Cu and Ni is first removed preferably by passing the effluent through a cation exchange resin followed by passing the cation exchanged effluent through an anion exchange resin to remove the Mo and W metals. The treated waste water meets federal guidelines for dissolved metal contaminant limits for water discharge to water ways. Alternatively, filtered effluent is directly passed through an anion exchange resin to remove Mo and W and the dissolved TMAH and copper and nickel are removed by cation exchange.

    Abstract translation: 本发明提供了一种处理废水的方法,所述废水含有有机碱如四甲基氢氧化铵和由掩模清洗和Mo蚀刻工艺产生的诸如Mo,W,Cu和Ni的溶解金属。 首先将有机碱与Cu和Ni一起除去,优选通过使流出物通过阳离子交换树脂,然后使阳离子交换的流出物通过阴离子交换树脂以除去Mo和W金属。 经处理的废水符合联邦关于排水到水路的溶解金属污染物限值的指南。 或者,过滤的流出物直接通过阴离子交换树脂以除去Mo和W,并通过阳离子交换除去溶解的TMAH和铜和镍。

    Method of forming defect-free ceramic structures using thermally depolymerizable surface layer
    19.
    发明授权
    Method of forming defect-free ceramic structures using thermally depolymerizable surface layer 失效
    使用可热解聚表面层形成无缺陷陶瓷结构的方法

    公开(公告)号:US06261927B1

    公开(公告)日:2001-07-17

    申请号:US09302943

    申请日:1999-04-30

    Abstract: This invention relates generally to a new method of forming semiconductor substrates with defect-free surface metallurgical features. In particular, the invention related to a method for providing surface protected ceramic green sheet laminates using at least one thermally depolymerizable surface layer. More particularly, the invention encompasses a method for fabricating semiconductor substrates wherein a thermally depolymerizable/decomposable surface film is placed over a ceramic green sheet stack or assembly prior to lamination and caused to conform to the surface topography of the green sheet during lamination. The invention also encompasses a method for fabricating surface protected green sheet laminates which can be sized or diced without causing process related defects on the ceramic surface. After lamination the thermally depolymerizable/decomposable film is conveniently and cleanly removed due to thermal depolymerization and burn-off of volatile species during the sintering process, thus providing surface defect-free ceramic substrates.

    Abstract translation: 本发明一般涉及一种形成具有无缺陷表面冶金特征的半导体衬底的新方法。 特别地,本发明涉及使用至少一个可热解聚表面层来提供表面保护的陶瓷生片层叠体的方法。 更具体地说,本发明包括一种制造半导体衬底的方法,其中在层压之前将热可解聚/可分解的表面薄膜放置在陶瓷生片层或组件上方并使其在叠层过程中符合生片的表面形貌。 本发明还包括用于制造表面保护的生片层压板的方法,其可以在陶瓷表面上不引起工艺相关缺陷的尺寸或切割。 在层压之后,由于在烧结过程中挥发物质的热解聚和燃烧,因此可方便且清洁地除去热可分解/可分解的膜,从而提供无表面缺陷的陶瓷基材。

    Method of etching molybdenum metal from substrates
    20.
    发明授权
    Method of etching molybdenum metal from substrates 失效
    从基材上蚀刻钼金属的方法

    公开(公告)号:US06221269B1

    公开(公告)日:2001-04-24

    申请号:US09233384

    申请日:1999-01-19

    Abstract: A method is provided for etching and removing extraneous molybdenum or debris on ceramic substrates such as semiconductor devices and also for molybdenum etching in the fabrication of molybdenum photomasks. The method employs a multi-step process using an acidic aqueous solution of a ferric salt to remove (etch) the molybdenum debris followed by contacting the treated substrate with an organic quaternary ammonium hydroxide to remove any molybdenum black oxides which may have formed on the exposed surface of treated molybdenum features in ceramic substrates. The method is environmentally safe and the waste solutions may be easily waste treated for example by precipitating the ferric salts as ferric hydroxide and removing anions such as sulfate by precipitation with lime. The method replaces the currently used method of employing ferricyanide salts which create serious hazardous waste disposal and environmental problems.

    Abstract translation: 提供了一种用于在陶瓷衬底(例如半导体器件)上蚀刻和去除外来的钼或碎片以及在钼光掩模的制造中用于钼蚀刻的方法。 该方法采用多步法,使用酸式的铁盐水溶液去除(蚀刻)钼碎片,随后将经处理的底物与有机季铵氢氧化物接触以除去可能形成于暴露的钼黑氧化物 处理的钼特征在陶瓷衬底中的表面。 该方法是环境安全的,并且废溶液可以容易地被废物处理,例如通过将铁盐沉淀为氢氧化铁并通过用石灰沉淀除去诸如硫酸盐的阴离子。 该方法取代了目前使用的铁氰化物盐的方法,造成严重的危险废物处理和环境问题。

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