公开(公告)号：US08304351B2

公开(公告)日：2012-11-06

申请号：US12972711

申请日：2010-12-20

Applicant: Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Shankar Venkataraman

Inventor： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Shankar Venkataraman

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234

Abstract: Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.

Abstract translation: 描述形成电介质层的方法。 所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。 通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。 可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。 在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

公开(公告)号：US08211808B2

公开(公告)日：2012-07-03

申请号：US12551180

申请日：2009-08-31

Applicant: Kedar Sapre ,  Jing Tang ,  Linlin Wang ,  Abhijit Basu Mallick ,  Nitin Ingle

Inventor： Kedar Sapre ,  Jing Tang ,  Linlin Wang ,  Abhijit Basu Mallick ,  Nitin Ingle

IPC: H01L21/302

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.

Abstract translation: 描述了一种蚀刻含硅和碳的材料的方法，并且包括与活性氧气流组合的SiConi TM蚀刻。 可以在SiConi™蚀刻之前引入活性氧，从而减少近表面区域的碳含量，并允许SiConi™蚀刻进行得更快。 或者，可以在SiConi TM蚀刻期间引入活性氧，进一步提高有效蚀刻速率。

公开(公告)号：US07541297B2

公开(公告)日：2009-06-02

申请号：US11876541

申请日：2007-10-22

Applicant: Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

Inventor： Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

IPC: H01L21/469 ,  H01L21/31

CPC classification number: H01L21/31612 ,  C23C16/045 ,  C23C16/24 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76837

Abstract: A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.

Abstract translation: 在基板上形成氧化硅层的方法。 该方法包括提供衬底并形成覆盖衬底的至少一部分的第一氧化硅层，第一氧化硅层包括残留的水，羟基和碳类。 该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分。 此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层。 至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。

公开(公告)号：US20130217241A1

公开(公告)日：2013-08-22

申请号：US13590702

申请日：2012-08-21

Applicant: Brian S. Underwood ,  Linlin Wang ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Nitin K. Ingle

Inventor： Brian S. Underwood ,  Linlin Wang ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02208 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/31111

Abstract: Methods are described for forming and curing a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon and carbon containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition chamber temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is treated to remove components which enabled the flowability, but are no longer needed after deposition. Removal of the components increases etch resistance in order to allow the gapfill silicon-carbon-and-nitrogen-containing layer to remain intact during subsequent processing. The treatments have been found to decrease the evolution of properties of the film upon exposure to atmosphere.

Abstract translation: 描述了用于在半导体衬底上形成和固化可流动的含硅 - 碳和氮的层的方法。 硅和碳组分可以来自含硅和碳的前体，而氮可以来自已经被活化的氮含量的前驱物，以加速氮与含较低沉积室的含硅和碳的前体的反应 温度。 处理初始可流动的含硅碳和氮的层以去除能够流动的组分，但在沉积后不再需要。 组分的去除增加了耐蚀刻性，以便允许间隙填充硅 - 碳 - 和含氮层在后续处理过程中保持完整。 已经发现这些处理降低了暴露于大气中的膜的性质的演变。

公开(公告)号：US20120003840A1

公开(公告)日：2012-01-05

申请号：US12972711

申请日：2010-12-20

Applicant: Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Shankar Venkataraman

Inventor： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Shankar Venkataraman

IPC: H01L21/3105 ,  B82Y40/00

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234

Abstract: Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.

Abstract translation: 描述形成电介质层的方法。 所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。 通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。 可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。 在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

公开(公告)号：US08466073B2

公开(公告)日：2013-06-18

申请号：US13448624

申请日：2012-04-17

Applicant: Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

Inventor： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/316

CPC classification number: H01L21/022 ,  C23C16/30 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02323 ,  H01L21/02326

Abstract: A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing film is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.

Abstract translation: 描述形成氧化硅层的方法。 该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。 通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅氮和氢的膜。 在含硅 - 氮和氢的膜之上形成覆盖层，以避免在转化为氧化硅之前下层膜性能的时间演变。 封盖层通过将自由基氧前体（在远程等离子体中激发）与未掺杂的含硅和碳的前体组合而形成。 通过暴露于含氧环境将膜转化为氧化硅。 两个膜可以沉积在相同的衬底处理室内，并且可以沉积而不破坏真空。

公开(公告)号：US20120309205A1

公开(公告)日：2012-12-06

申请号：US13448624

申请日：2012-04-17

Applicant: Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

Inventor： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/316

CPC classification number: H01L21/022 ,  C23C16/30 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02323 ,  H01L21/02326

Abstract: A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen containing film is formed by combining a radical precursor (excited in a remote plasma) with m unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.

Abstract translation: 描述形成氧化硅层的方法。 该方法首先通过自由基成分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。 通过将自由基前体（在远程等离子体中激发）与未加注射的无碳硅前体组合形成含硅氮和氢的膜。 在含硅 - 氮和氢的膜之上形成覆盖层，以避免在转化为氧化硅之前下层膜性能的时间演变。 封盖层通过将自由基氧前体（在远程等离子体中激发）与未掺杂的含硅和碳的前体组合而形成。 通过暴露于含氧环境将膜转化为氧化硅。 两个膜可以沉积在相同的衬底处理室内，并且可以沉积而不破坏真空。