Poly(silsesquioxane) spherical particle containing ultraviolet light-absorbing group and manufacturing method thereof
    11.
    发明授权
    Poly(silsesquioxane) spherical particle containing ultraviolet light-absorbing group and manufacturing method thereof 有权
    聚(倍半硅氧烷)含紫外光吸收组的球形颗粒及其制造方法

    公开(公告)号:US07964747B2

    公开(公告)日:2011-06-21

    申请号:US11587916

    申请日:2004-08-24

    Abstract: The present invention relates to a polysilsesquioxane spherical particle containing a ultraviolet light (UV) absorbing group, and manufacturing method thereof, characterized in that a preferred embodiment of the present invention comprises (i) preparing a silsesquioxane precursor containing the UV-absorbing group; and (ii) reacting the silsesquioxane precursor prepared in the step (i) with aminoalkylalkoxy silane compound or its oligomer under a solvent by means of a catalyst or a catalyst and co-polymerization precursor to prepare a polysilsesquioxane spherical particle containing a UV-absorbing group. The present invention provides the polysilsesquioxane spherical particle having a good physical property and a good UV-absorbing efficiency as cosmetic additive, and a simple and economical method of manufacturing the spherical particle.

    Abstract translation: 本发明涉及含有紫外线(UV)吸收基团的聚倍半硅氧烷球形颗粒及其制造方法,其特征在于本发明的优选实施方案包括(i)制备含有紫外线吸收基团的倍半硅氧烷前体; 和(ii)通过催化剂或催化剂和共聚合前体使溶剂中的步骤(ⅰ)中制备的倍半硅氧烷前体与氨基烷基烷氧基硅烷化合物或其低聚物反应,制备含紫外线吸收基团的聚倍半硅氧烷球形颗粒 。 本发明提供具有良好的物理性能和良好的紫外线吸收效率的聚倍半硅氧烷球形颗粒作为化妆品添加剂,以及制造球形颗粒的简单且经济的方法。

    Image sensor and method of driving transfer transistor of image sensor
    13.
    发明授权
    Image sensor and method of driving transfer transistor of image sensor 有权
    图像传感器和驱动图像传感器传输晶体管的方法

    公开(公告)号:US07935918B2

    公开(公告)日:2011-05-03

    申请号:US12645588

    申请日:2009-12-23

    Abstract: Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.

    Abstract translation: 提供了一种4晶体管CMOS图像,其中改变驱动条件或像素结构,使得像素在复位和传输操作期间在夹断状态下工作,以减少暗电流和固定图案噪声 由转移晶体管的操作条件的变化和像素间特性差异引起。 图像传感器包括光敏像素,其包括用于传输在光电二极管中产生的光子感应电荷的转移晶体管; 以及电压控制单元,用于在所述转移晶体管的导通部分的部分或整个部分期间将施加到所述转移晶体管的栅极的导通电压控制为低于浮置扩散节点电压加上所述转移晶体管的阈值电压 转移晶体管使得转移晶体管以伪夹断模式工作。

    Methods of manufacturing semiconductor devices
    14.
    发明授权
    Methods of manufacturing semiconductor devices 有权
    制造半导体器件的方法

    公开(公告)号:US07785985B2

    公开(公告)日:2010-08-31

    申请号:US12133772

    申请日:2008-06-05

    Abstract: Methods of manufacturing a semiconductor device, which can reduce hot electron induced punchthrough (HEIP) and/or improve the operating characteristics of the device include selectively forming an oxynitride layer in a device isolation layer according to the characteristics of transistors isolated by the device isolation layer. The methods include forming first trenches and second trenches on a substrate, forming an oxide layer on the surfaces of the first trenches and the second trenches, selectively forming an oxynitride layer on the second trenches by using plasma ion immersion implantation (PIII), and forming a buried insulating layer in the first trenches and the second trenches. The buried insulating layer may be planarized to form a first device isolation layer in the first trenches and a second device isolation layer in the second trenches.

    Abstract translation: 可以减少热电子穿透(HEIP)和/或改善器件的工作特性的半导体器件的制造方法包括根据器件隔离层隔离的晶体管的特性选择性地在器件隔离层中形成氧氮化物层 。 所述方法包括在衬底上形成第一沟槽和第二沟槽,在第一沟槽和第二沟槽的表面上形成氧化物层,通过使用等离子体离子浸没注入(PIII)在第二沟槽上选择性地形成氧氮化物层,并形成 在第一沟槽和第二沟槽中的掩埋绝缘层。 掩埋绝缘层可以被平坦化以在第一沟槽中形成第一器件隔离层,在第二沟槽中形成第二器件隔离层。

    Plasma Ion Doping Method and Apparatus
    15.
    发明申请
    Plasma Ion Doping Method and Apparatus 审中-公开
    等离子体离子掺杂法和仪器

    公开(公告)号:US20090068823A1

    公开(公告)日:2009-03-12

    申请号:US12145914

    申请日:2008-06-25

    CPC classification number: H01L21/2236 H01J37/32412 H01J37/32449

    Abstract: In plasma ion doping operations, a wafer is positioned on a susceptor within a reaction chamber and an ion doping source gas is plasmalyzed in an upper part of the reaction chamber above a major surface of the wafer while supplying a control gas into the reaction chamber in a lower part of the reaction chamber opposite the major surface of the wafer to thereby dope ions into the major surface of the wafer. The ion doping source gas may comprise at least one halide gas, and the control gas may comprise at least one depositing gas, such as a silane gas. In further embodiments, a diluent gas, such as an inert gas, may be supplied to the reaction chamber while supplying the ion doping source gas and the control gas. Related plasma ion doping apparatus are described.

    Abstract translation: 在等离子体离子掺杂操作中,将晶片定位在反应室内的基座上,并且将离子掺杂源气体在晶片的主表面上方的反应室上部进行等离子化,同时将控制气体供应到反应室中 反应室的下部与晶片的主表面相对,从而将离子掺杂到晶片的主表面。 离子掺杂源气体可以包括至少一种卤化物气体,并且控制气体可以包括至少一种沉积气体,例如硅烷气体。 在另外的实施方案中,可以向反应室供应诸如惰性气体的稀释气体,同时供应离子掺杂源气体和控制气体。 描述了相关的等离子体离子掺杂装置。

    CIRCUIT AND METHOD FOR DRIVING A LIGHT EMITTING DIODE FOR A BACKLIGHT, AND BACKLIGHT DRIVING APPARATUS USING THE SAME
    18.
    发明申请
    CIRCUIT AND METHOD FOR DRIVING A LIGHT EMITTING DIODE FOR A BACKLIGHT, AND BACKLIGHT DRIVING APPARATUS USING THE SAME 审中-公开
    用于驱动背光的发光二极管的电路和方法,以及使用其的背光驱动装置

    公开(公告)号:US20110267387A1

    公开(公告)日:2011-11-03

    申请号:US13049705

    申请日:2011-03-16

    Abstract: A circuit and method for driving a light emitting diode for a backlight, and a backlight driving apparatus using the same is provided. A circuit for driving a light emitting diode (LED) for a backlight includes a filtering unit configured to receive a pulse width modulation (PWM) signal and remove noise of a predetermined band, a duty stabilization unit configured to stabilize a duty of a PWM signal filtered by the filtering unit, a dimming signal generation unit configured to generate a dimming signal based on a PWM signal stabilized by the duty stabilization unit, and an LED driving unit configured to drive the LED for the backlight based on the dimming signal generated by the dimming signal generation unit.

    Abstract translation: 提供了用于驱动用于背光的发光二极管的电路和方法,以及使用其的背光驱动装置。 用于驱动用于背光的发光二极管(LED)的电路包括被配置为接收脉宽调制(PWM)信号并去除预定频带的噪声的滤波单元,配置成稳定PWM信号占空比的占空比稳定单元 调光信号生成单元,被配置为基于由占空比稳定单元稳定的PWM信号生成调光信号,以及LED驱动单元,其被配置为基于由所述滤波单元生成的调光信号驱动用于背光的LED 调光信号发生单元。

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