公开(公告)号：US20150255344A1

公开(公告)日：2015-09-10

申请号：US14431002

申请日：2013-09-27

Applicant: SILEX MICROSYSTEMS AB

Inventor： Thorbjorn Ebefors ,  Henrik Knutsson

IPC: H01L21/768

CPC classification number: H01L21/76897 ,  H01L21/0217 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/288 ,  H01L21/76847 ,  H01L21/76874 ,  H01L21/76879 ,  H01L21/76888 ,  H01L21/76892 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of making a substrate-through metal via having a high aspect ratio, in a semiconductor substrate, and a metal pattern on the substrate surface, includes providing a semiconductor substrate (wafer) and depositing poly-silicon on the substrate. The the poly-silicon on the substrate surface is patterned by etching away unwanted portions. Then, Ni is selectiveley deposited on the poly-silicon by an electroless process. A via hole is made through the substrate, wherein the walls in the hole is subjected to the same processing as above. Cu is deposited on the Ni by a plating process. Line widths and spacings

Abstract translation: 在半导体衬底和衬底表面上的金属图案中制造具有高纵横比的衬底通过金属通孔的方法包括在衬底上提供半导体衬底（晶片）并沉积多晶硅。 衬底表面上的多晶硅通过蚀刻掉不需要的部分而被图案化。 然后，Ni通过无电解方法选择性地沉积在多晶硅上。 通孔穿过基底，其中孔中的壁经受与上述相同的处理。 Cu通过电镀工艺沉积在Ni上。 线宽度和间距<10μm位于晶片的两侧。

公开(公告)号：US20140346657A1

公开(公告)日：2014-11-27

申请号：US14365235

申请日：2012-12-17

Applicant: SILEX MICROSYSTEMS AB

Inventor： Thorbjorn Ebefors ,  Niklas Svedin

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00285 ,  B81B7/0038 ,  B81C1/00293 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: A method for sealing cavities in micro-electronic/-mechanical system (MEMS) devices to provide a controlled atmosphere within the sealed cavity includes providing a semiconductor substrate on which a template is provided on a localized area of the substrate. The template defines the interior shape of the cavity. Holes are made so as to enable venting of the cavity to provide a desired atmosphere to enter into the cavity through the hole. Finally, a sealing material is provided in the hole to seal the cavity. The sealing can be made by compression and/or melting of the sealing material.

Abstract translation: 一种用于在微电子/机械系统（MEMS）装置中密封空腔以在密封空腔内提供受控气氛的方法包括提供其上在基板的局部区域上提供模板的半导体衬底。 模板定义了腔的内部形状。 孔被制成以便能够排出空腔以提供期望的气氛以通过孔进入空腔。 最后，在孔中设置密封材料以密封空腔。 密封可以通过密封材料的压缩和/或熔化来制造。

公开(公告)号：US09511999B2

公开(公告)日：2016-12-06

申请号：US14365235

申请日：2012-12-17

Applicant: SILEX MICROSYSTEMS AB

Inventor： Thorbjorn Ebefors ,  Niklas Svedin

IPC: H01L21/76 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00285 ,  B81B7/0038 ,  B81C1/00293 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: A method for sealing cavities in micro-electronic/-mechanical system (MEMS) devices to provide a controlled atmosphere within the sealed cavity includes providing a semiconductor substrate on which a template is provided on a localized area of the substrate. The template defines the interior shape of the cavity. Holes are made so as to enable venting of the cavity to provide a desired atmosphere to enter into the cavity through the hole. Finally, a sealing material is provided in the hole to seal the cavity. The sealing can be made by compression and/or melting of the sealing material.

Abstract translation: 一种用于在微电子/机械系统（MEMS）装置中密封空腔以在密封空腔内提供受控气氛的方法包括提供其上在基板的局部区域上提供模板的半导体衬底。 模板定义了腔的内部形状。 孔被制成以便能够排出空腔以提供期望的气氛以通过孔进入空腔。 最后，在孔中设置密封材料以密封空腔。 密封可以通过密封材料的压缩和/或熔化来制造。

公开(公告)号：US09507142B2

公开(公告)日：2016-11-29

申请号：US14410211

申请日：2013-06-12

Applicant: SILEX MICROSYSTEMS AB

Inventor： Peter Agren

IPC: G02B26/08 ,  H01L23/48 ,  B81B3/00 ,  B81C1/00 ,  G01D5/24 ,  H01L23/522

CPC classification number: G02B26/0841 ,  B81B3/0021 ,  B81B3/0045 ,  B81B2201/02 ,  B81B2201/03 ,  B81B2203/04 ,  B81C1/00357 ,  B81C1/00619 ,  G01D5/24 ,  G02B26/085 ,  H01L23/481 ,  H01L23/5225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device, includes a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through the substrate (10) having first (16a) and second (16b) end surfaces, the first end surface (16a) constituting a transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) including a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.

Abstract translation: 半导体器件包括具有第一（12a）和第二（12b）侧的半导体衬底（10）。 提供至少一个通过具有第一（16a）和第二（16b）端面的基板延伸的通孔（15），第一端面（16a）构成用于与可移动元件（14）相互作用的换能器电极， 布置在基板（10）的第一侧（12a）处。 在衬底（10）的第一侧（12a）的至少一部分上设置有屏蔽（17），所述屏蔽/掩模（17）包括导电层（19a）和绝缘材料层（19b） 在所述基板（10）和所述导电层（19a）之间。 掩模具有仅露出通孔的第一表面（16a）的一部分的开口（18）。 优选地，掩模中的开口（18）与可移动元件精确对准，并且开口的区域被精确地限定。

公开(公告)号：US20160035662A1

公开(公告)日：2016-02-04

申请号：US14881868

申请日：2015-10-13

Applicant: SILEX MICROSYSTEMS AB

Inventor： Thorbjörn EBEFORS ,  Daniel PERTTU

IPC: H01L23/498 ,  H01L21/308 ,  H01L21/48 ,  H01L21/306

CPC classification number: H01L23/49827 ,  H01L21/30625 ,  H01L21/308 ,  H01L21/486 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/5226 ,  H01L23/525 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13 ,  H01L2224/13023 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/1461 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2224/05552

Abstract: The invention relates to a semiconductor structure, comprising a substrate of a semiconductor material having a first side (FS) and an opposite second side (BS). There is at least one conductive wafer-through via (V) comprising metal, and at least one recess (RDL) provided in the first side of the substrate and in the semiconductor material of the substrate. The recess is filled with metal and seamlessly connected with the wafer-through via. The exposed surfaces of the metal filled via and the metal filled recess are essentially flush with the substrate surface on the first side of the substrate. There is also provide an interposer comprising the above structure, further comprising contacts for attaching circuit boards and integrated circuits on opposite sides of the interposer. A method of making the structure is also provided.

公开(公告)号：US20140063580A1

公开(公告)日：2014-03-06

申请号：US14073307

申请日：2013-11-06

Applicant: SILEX Microsystems AB

Inventor： Thorbjorn Ebefors ,  Edvard Kalvesten ,  Peter Agren ,  Niklas Svedin

IPC: G02B26/08

CPC classification number: G02B26/0833 ,  B81B7/0006 ,  B81B7/007 ,  B81B2207/092 ,  B81B2207/095 ,  G02B6/3518 ,  G02B6/3584 ,  G02B26/0841 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A layered micro-electronic and/or micro-mechanic structure comprises at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro- mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.

Abstract translation: 分层微电子和/或微机械结构包括在导电层之间具有绝缘层的至少三个交替导电层。 还提供了在第一外层中的通孔，所述通孔包括由穿过该层的晶片天然材料制成的绝缘导电连接，在第一外层中延伸穿过其它层并进入所述通孔的导电插塞，以便提供 通过层的导电性，以及围绕所述其它层的至少一个所选层的所述导电插塞的绝缘外壳，用于使所述插塞与所述选定层中的材料绝缘。 它还涉及微电子和/或微机械装置，其包括设置在空腔上方的可动构件，使得其可在至少一个方向上移动。 该装置具有根据本发明的分层结构。 还提供了制造这种分层MEMS结构的方法。

公开(公告)号：US09448401B2

公开(公告)日：2016-09-20

申请号：US14073307

申请日：2013-11-06

Applicant: SILEX Microsystems AB

Inventor： Thorbjorn Ebefors ,  Edvard Kalvesten ,  Peter Agren ,  Niklas Svedin

IPC: G02B26/08 ,  B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  G02B6/35

CPC classification number: G02B26/0833 ,  B81B7/0006 ,  B81B7/007 ,  B81B2207/092 ,  B81B2207/095 ,  G02B6/3518 ,  G02B6/3584 ,  G02B26/0841 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A layered micro-electronic and/or micro-mechanic structure comprises at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.

Abstract translation: 分层微电子和/或微机械结构包括在导电层之间具有绝缘层的至少三个交替导电层。 还提供了在第一外层中的通孔，所述通孔包括由穿过该层的晶片天然材料制成的绝缘导电连接，在第一外层中延伸穿过其它层并进入所述通孔的导电插塞，以便提供 通过层的导电性，以及围绕所述其它层的至少一个所选层的所述导电插塞的绝缘外壳，用于使所述插塞与所述选定层中的材料绝缘。 它还涉及微电子和/或微机械装置，其包括设置在空腔上方的可动构件，使得其可在至少一个方向上移动。 该装置具有根据本发明的分层结构。 还提供了制造这种分层MEMS结构的方法。

公开(公告)号：US20150279756A1

公开(公告)日：2015-10-01

申请号：US14440084

申请日：2013-10-31

Applicant: SILEX MICROSYSTEMS AB

Inventor： Ulf Erlesand ,  Edvard Kälvesten

IPC: H01L23/15 ,  C25D5/02 ,  H01L21/768 ,  H01L23/498 ,  B81B7/00

CPC classification number: H01L23/15 ,  B81B7/007 ,  B81C1/00095 ,  C25D5/02 ,  H01L21/50 ,  H01L21/76879 ,  H01L23/49827 ,  H01L23/49872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Method of making through-substrate-vias in glass substrates includes providing a first substrate on which a plurality of needles protruding vertically from the substrate are made; providing a second substrate made of glass; locating the substrates adjacent each other such that the needles on the first substrate face the second substrate; applying heat to a temperature where the glass softens, by heating the glass or the needle substrate or both; applying a force such that the needles on the first substrate penetrate into the glass to provide impressions in the glass; and finally, removing the first substrate and providing material filling the impressions in the second substrate made of glass. A device includes a silicon substrate having a cavity in which a MEMS component is accommodated, and a cap wafer made of a material having a low dielectric constant, and through substrate vias of metal, is bonded to the silicon substrate.

Abstract translation: 在玻璃基板中制造贯通基板通孔的方法包括提供第一基板，其上形成有从基板垂直突出的多个针; 提供由玻璃制成的第二衬底; 将基板相邻地定位，使得第一基板上的针朝向第二基板; 通过加热玻璃或针基材或两者，将热量施加到玻璃软化的温度; 施加力，使得第一基底上的针穿透玻璃以在玻璃中产生印模; 最后，移除第一基片并提供填充由玻璃制成的第二基片的印模的材料。 一种器件包括具有其中容纳MEMS部件的空腔的硅基板和由具有低介电常数的材料制成的盖晶片，并且通过金属的基板通孔接合到硅基板。

公开(公告)号：US09607915B2

公开(公告)日：2017-03-28

申请号：US14440084

申请日：2013-10-31

Applicant: SILEX MICROSYSTEMS AB

Inventor： Ulf Erlesand ,  Edvard Kälvesten

IPC: H01L23/15 ,  C25D5/02 ,  H01L21/768 ,  H01L23/498 ,  H01L21/50 ,  B81C1/00 ,  B81B7/00

CPC classification number: H01L23/15 ,  B81B7/007 ,  B81C1/00095 ,  C25D5/02 ,  H01L21/50 ,  H01L21/76879 ,  H01L23/49827 ,  H01L23/49872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Method of making through-substrate-vias in glass substrates includes providing a first substrate on which a plurality of needles protruding vertically from the substrate are made; providing a second substrate made of glass; locating the substrates adjacent each other such that the needles on the first substrate face the second substrate; applying heat to a temperature where the glass softens, by heating the glass or the needle substrate or both; applying a force such that the needles on the first substrate penetrate into the glass to provide impressions in the glass; and finally, removing the first substrate and providing material filling the impressions in the second substrate made of glass. A device includes a silicon substrate having a cavity in which a MEMS component is accommodated, and a cap wafer made of a material having a low dielectric constant, and through substrate vias of metal, is bonded to the silicon substrate.

公开(公告)号：US09484293B2

公开(公告)日：2016-11-01

申请号：US14881868

申请日：2015-10-13

Applicant: SILEX MICROSYSTEMS AB

Inventor： Thorbjörn Ebefors ,  Daniel Perttu

IPC: H01L23/52 ,  H01L23/498 ,  H01L23/14 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L21/306 ,  H01L21/308 ,  H01L21/48 ,  H01L23/525

CPC classification number: H01L23/49827 ,  H01L21/30625 ,  H01L21/308 ,  H01L21/486 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/5226 ,  H01L23/525 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13 ,  H01L2224/13023 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/1461 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2224/05552

Abstract: The invention relates to a semiconductor structure, comprising a substrate of a semiconductor material having a first side (FS) and an opposite second side (BS). There is at least one conductive wafer-through via (V) comprising metal, and at least one recess (RDL) provided in the first side of the substrate and in the semiconductor material of the substrate. The recess is filled with metal and seamlessly connected with the wafer-through via. The exposed surfaces of the metal filled via and the metal filled recess are essentially flush with the substrate surface on the first side of the substrate. There is also provide an interposer comprising the above structure, further comprising contacts for attaching circuit boards and integrated circuits on opposite sides of the interposer. A method of making the structure is also provided.