公开(公告)号：US20120307857A1

公开(公告)日：2012-12-06

申请号：US13486698

申请日：2012-06-01

Applicant: Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-Seok Choi ,  Jongbae Kim

Inventor： Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-Seok Choi ,  Jongbae Kim

IPC: H01S5/22 ,  H01L33/58

CPC classification number: H01L33/005 ,  B82Y20/00 ,  G02B6/305 ,  G02B6/4206 ,  H01L33/0045 ,  H01L33/20 ,  H01L2933/0016 ,  H01L2933/0058 ,  H01S5/02216 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/06226 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/141 ,  H01S5/2213 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/34306 ,  H01S2301/176

Abstract: Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.

Abstract translation: 提供了一种高速超发光二极管，其制造方法，以及包括该发光二极管的波长可调谐外腔激光器。 超发光二极管包括具有有源区和光模尺寸转换区的衬底，在有源区中包括脊波导的波导和连接到有源波导的光模尺寸转换区中的深脊波导， 脊波导; 设置在脊波导的侧面上的平坦化层和基板上的深脊波导，以及与该电极电连接的焊盘，该焊盘设置在有源波导的外侧的平坦化层上。

公开(公告)号：US20100238962A1

公开(公告)日：2010-09-23

申请号：US12541561

申请日：2009-08-14

Applicant: Su Hwan Oh ,  Kihong Yoon ,  Kisoo Kim ,  Dae Kon Oh

Inventor： Su Hwan Oh ,  Kihong Yoon ,  Kisoo Kim ,  Dae Kon Oh

IPC: H01S5/14 ,  H01S5/026 ,  H01S5/34

CPC classification number: H01S5/14 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/164 ,  H01S5/2231

Abstract: Provided is an external cavity laser light source. The light source includes a substrate, an optical waveguide, and a current blocking layer. The optical waveguide includes a passive waveguide layer, a lower clad layer, an active layer, and an upper clad layer that are sequentially stacked on the substrate and is divided into regions including a linear active waveguide region, a bent active waveguide region, a tapered waveguide region, and a window region. The current blocking layer was formed an outside of the active layer to reduce leakage current. The linear and bent active waveguide regions have a buried heterostructure (BH), and the tapered waveguide region and the window region have a buried ridge stripe (BRS) structure. The passive waveguide layer a width substantially equal to a maximal width of the tapered waveguide region at least in the bent active waveguide region, the tapered waveguide region, and the window region.

Abstract translation: 提供外腔激光光源。 光源包括基板，光波导和电流阻挡层。 光波导包括顺序层叠在基板上的无源波导层，下包层，有源层和上覆层，并分为包括线性有源波导区域，弯曲有源波导区域，锥形 波导区域和窗口区域。 电流阻挡层形成在有源层的外侧，以减少泄漏电流。 线性和弯曲的有源波导区域具有掩埋异质结构（BH），并且锥形波导区域和窗口区域具有掩埋脊条纹（BRS）结构。 至少在弯曲的有源波导区域，锥形波导区域和窗口区域中，无源波导层的宽度基本上等于锥形波导区域的最大宽度。

公开(公告)号：US07688870B2

公开(公告)日：2010-03-30

申请号：US12182543

申请日：2008-07-30

Applicant: Su Hwan Oh ,  Jung Jin Ju

Inventor： Su Hwan Oh ,  Jung Jin Ju

IPC: H01S3/00 ,  H01S5/00

CPC classification number: H01S5/141 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/16 ,  H01S5/227 ,  H01S5/50

Abstract: Provided is a super luminescent diode having low power consumption due to low threshold current and a high output power in low-current operation, which is suitable for an external cavity laser. The super luminescent diode for use in the external cavity laser is divided into a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region to provide a light source having a low threshold current and a nearly double output power of a conventional SLD.A super luminescent diode-integrated reflective optical amplifier includes a substrate that has a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region for amplifying light generated from the SLD region, an optical waveguide that has a buried heterostructure, the buried heterostructure including an active layer extending over the SLD and SOA regions on the substrate and tapered in the SOA region; a current blocking layer formed around the active layer for blocking a current flow to layers other than the active layer, the current blocking layer including a stack of semiconductor layers having different conductivity types; and a clad layer formed on the optical waveguide and the current blocking layer.

Abstract translation: 提供了一种超低功耗的超级发光二极管，由于低电流操作的低阈值电流和高输出功率而具有低功耗，适用于外腔激光器。 用于外腔激光器的超发光二极管被分为超发光二极管（SLD）区域和半导体光放大器（SOA）区域，以提供具有低阈值电流和近似双输出功率的光源 SLD。 超发光二极管集成反射光放大器包括具有超发光二极管（SLD）区域的基板和用于放大从SLD区域产生的光的半导体光放大器（SOA）区域，具有掩埋异质结构的光波导， 包括在SLD上延伸的有源层和衬底上的SOA区域并在SOA区域中渐缩的掩埋异质结构; 电流阻挡层，形成在有源层周围，用于阻挡电流流向除有源层以外的层，电流阻挡层包括具有不同导电类型的半导体层的叠层; 以及形成在光波导和电流阻挡层上的覆层。

公开(公告)号：US20100074282A1

公开(公告)日：2010-03-25

申请号：US12501916

申请日：2009-07-13

Applicant: Su-Hwan Oh ,  Ki-Soo Kim ,  Dae-Kon Oh

Inventor： Su-Hwan Oh ,  Ki-Soo Kim ,  Dae-Kon Oh

IPC: H01S3/10

CPC classification number: H01S5/141 ,  G02B6/124 ,  H01S3/1055 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0612 ,  H01S5/3211 ,  H01S5/50

Abstract: Provided is a tunable external cavity laser. The tunable external cavity laser includes that a bragg grating hermetically packaged in a TO can, a superluminescent diode (SLD) using an optical source signal and an optical fiber. A lasing wavelength is decided when the optical source signal emitted from the SLD is reflected by the bragg grating and the lasing wavelength is output to the optical fiber through the SLD.

Abstract translation: 提供了可调谐的外腔激光器。 可调谐外腔激光器包括用TO形成气密封装的布拉格光栅，使用光源信号的超发光二极管（SLD）和光纤。 当从SLD发射的光源信号被布拉格光栅反射并且通过SLD将激光波长输出到光纤时，确定激光波长。

公开(公告)号：US20090154514A1

公开(公告)日：2009-06-18

申请号：US12182543

申请日：2008-07-30

Applicant: Su Hwan OH ,  Jung Jin JU

Inventor： Su Hwan OH ,  Jung Jin JU

IPC: H01S5/026

CPC classification number: H01S5/141 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/16 ,  H01S5/227 ,  H01S5/50

Abstract: Provided is a super luminescent diode having low power consumption due to low threshold current and a high output power in low-current operation, which is suitable for an external cavity laser. The super luminescent diode for use in the external cavity laser is divided into a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region to provide a light source having a low threshold current and a nearly double output power of a conventional SLD.A super luminescent diode-integrated reflective optical amplifier includes a substrate that has a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region for amplifying light generated from the SLD region, an optical waveguide that has a buried heterostructure, the buried heterostructure including an active layer extending over the SLD and SOA regions on the substrate and tapered in the SOA region; a current blocking layer formed around the active layer for blocking a current flow to layers other than the active layer, the current blocking layer including a stack of semiconductor layers having different conductivity types; and a clad layer formed on the optical waveguide and the current blocking layer.

Abstract translation: 提供了一种超低功耗的超级发光二极管，由于低电流操作的低阈值电流和高输出功率而具有低功耗，适用于外腔激光器。 用于外腔激光器的超发光二极管被分为超发光二极管（SLD）区域和半导体光放大器（SOA）区域，以提供具有低阈值电流和近似双输出功率的光源 SLD。 超发光二极管集成反射光放大器包括具有超发光二极管（SLD）区域的基板和用于放大从SLD区域产生的光的半导体光放大器（SOA）区域，具有掩埋异质结构的光波导， 包括在SLD上延伸的有源层和衬底上的SOA区域并在SOA区域中渐缩的掩埋异质结构; 电流阻挡层，形成在有源层周围，用于阻挡电流流向除有源层以外的层，电流阻挡层包括具有不同导电类型的半导体层的叠层; 以及形成在光波导和电流阻挡层上的覆层。

公开(公告)号：US07378292B2

公开(公告)日：2008-05-27

申请号：US11293615

申请日：2005-12-02

Applicant: Moon Ho Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

Inventor： Moon Ho Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

IPC: H01L21/00

CPC classification number: H01S5/026 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2063 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/50 ,  H01S2302/00

Abstract: Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

Abstract translation: 提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中 。 激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高 当通过每个电极单独注入电流时输出光的强度。

公开(公告)号：US20070076773A1

公开(公告)日：2007-04-05

申请号：US11633739

申请日：2006-12-05

Applicant: Su Hwan Oh ,  Ki Kim ,  Oh Kee Kwon ,  Yong Baek

Inventor： Su Hwan Oh ,  Ki Kim ,  Oh Kee Kwon ,  Yong Baek

IPC: H01S5/00

CPC classification number: H01S5/2231 ,  B82Y20/00 ,  H01S5/1039 ,  H01S5/2222 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34306

Abstract: Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.

Abstract translation: 提供了具有改善的温度特性并且可以通过漏电流来减少光学损耗的埋脊式波导激光二极管。 掩埋脊波导激光二极管包括：以恒定宽度垂直延伸的脊区域，并且由包层的一部分上的选择性蚀刻层和由第一导电型材料形成的第一复合层构成; 以及p-n-p电流阻挡层，其厚度与脊区域外的包覆层上的脊区域的深度相同，并且包括由与第一导电类型材料相对的第二导电类型材料形成的第二化合物层。 此时，电流阻挡层包括在第二化合物层上延伸的第一化合物层。

公开(公告)号：US07599624B2

公开(公告)日：2009-10-06

申请号：US11252401

申请日：2005-10-17

Applicant: Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

Inventor： Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

IPC: H04J14/00

CPC classification number: H04J14/0282 ,  H04J14/0226 ,  H04J14/0246 ,  H04J14/0247 ,  H04J14/025 ,  H04J14/0252 ,  H04J2014/0253

Abstract: A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.

Abstract translation: 信道切换功能被添加到作为接入光网络系统的波分复用无源光网络（WDM-PON）系统，并且通过组合宽波长可调激光器和时分复用（TDM）来增加潜在传输速率， 数据结构，并正确使用必要的光学元件。 此外，当光源或阵列波导光栅（AWG）的波长改变时，跟踪波长，并且使用环回网络结构，没有额外的绕行线，传输信号的幅度最大化。 此外，需要较少的热电控制器（TEC）来稳定使用波长可调激光器的光线路终端（OLT）的温度，每个激光电子改变其波长。

公开(公告)号：US20080117492A1

公开(公告)日：2008-05-22

申请号：US11930727

申请日：2007-10-31

Applicant: Su Hwan OH ,  Jong Moo LEE

Inventor： Su Hwan OH ,  Jong Moo LEE

IPC: G02F1/01

CPC classification number: H04N9/3129

Abstract: A method and apparatus for modulating a particular light source used for laser display are provided. The apparatus includes a digital modulator digitally modulating light output from a semiconductor laser to a frequency higher than a repetition frequency required for laser image display; and a pixel brightness adjustor inserting at least one high-speed pulse into a period of the modulated output light, which is required for a single pixel, and adjusting a brightness of the pixel by adjusting the number of the inserted high-speed pulses.

Abstract translation: 提供了用于调制用于激光显示的特定光源的方法和装置。 该装置包括将从半导体激光器输出的光数字调制到高于激光图像显示所需的重复频率的数字调制器; 以及像素亮度调整器，其将至少一个高速脉冲插入到单个像素所需的调制输出光的周期中，并且通过调整插入的高速脉冲的数量来调整像素的亮度。

公开(公告)号：US07130325B2

公开(公告)日：2006-10-31

申请号：US10749043

申请日：2003-12-29

Applicant: Su Hwan Oh ,  Moon Ho Park ,  Ji Myon Lee ,  Ki Soo Kim ,  Chul Wook Lee ,  Hyun Sung Ko ,  Sahng Gi Park ,  Young Chul Chung ,  Su Hyun Kim

Inventor： Su Hwan Oh ,  Moon Ho Park ,  Ji Myon Lee ,  Ki Soo Kim ,  Chul Wook Lee ,  Hyun Sung Ko ,  Sahng Gi Park ,  Young Chul Chung ,  Su Hyun Kim

IPC: H01S5/00 ,  H01S3/08

CPC classification number: H01S5/06256 ,  H01S5/028 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/125 ,  H01S5/2205 ,  H01S5/227

Abstract: The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index are varied in accordance with a current applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, in such a wavelength tunable semiconductor laser, its construction is relatively simple, and it is relatively useful to the manufacturing and mass-producing the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.

Abstract translation: 本发明涉及具有能够调谐波长的结构的半导体激光器，其中采样光栅分布反馈SG-DFB结构部分和采样光栅分布布拉格反射器SG-DBR结构部分被集成。 在本发明中，折射率根据SG-DFB结构部分和SG-DBR结构部分中的相位控制区域的电流而变化，由此可以连续或不连续地调谐波长。 因此，在这种波长可调谐半导体激光器中，其结构相对简单，对制造和批量生产半导体激光器相对有用。 此外，这种波长可调谐半导体激光器具有优异的输出光学效率，同时可以调谐宽带的波长。