公开(公告)号：US07846757B2

公开(公告)日：2010-12-07

申请号：US11444946

申请日：2006-06-01

Applicant: Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh Kumar Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh Kumar Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract translation: 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

公开(公告)号：US07566580B2

公开(公告)日：2009-07-28

申请号：US11855591

申请日：2007-09-14

Applicant: Stacia Keller ,  Umesh Kumar Mishra ,  Nicholas A. Fichtenbaum

Inventor： Stacia Keller ,  Umesh Kumar Mishra ,  Nicholas A. Fichtenbaum

IPC: H01L21/20

CPC classification number: C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/0262

Abstract: Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.

Abstract translation: 公开了通过MOCVD生长的N面GaN薄膜的平滑，高质量薄膜异质外延生长的方法。 使用错误取向的衬底并且可能使衬底氮化使得能够生长平滑的N面GaN和其他III族氮化物膜，如本文所公开的。 本发明还避免了使得N面GaN材料不适合于器件应用的典型的大（母体尺寸）六角形特征。 本发明允许平滑，高质量的膜的生长，这使得N面装置的发展成为可能。

公开(公告)号：US20090146162A1

公开(公告)日：2009-06-11

申请号：US12370479

申请日：2009-02-12

Applicant: Arpan Chakraborty ,  Benjamin A. Haskell ,  Stacia Keller ,  James Stephen Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Umesh Kumar Mishra

Inventor： Arpan Chakraborty ,  Benjamin A. Haskell ,  Stacia Keller ,  James Stephen Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Umesh Kumar Mishra

IPC: H01L33/00 ,  H01L21/20 ,  H01L29/20

CPC classification number: H01L33/06 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0075 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

Abstract: A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

Abstract translation: 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。

公开(公告)号：US07186302B2

公开(公告)日：2007-03-06

申请号：US11123805

申请日：2005-05-06

Applicant: Arpan Chakraborty ,  Benjamin A. Haskell ,  Stacia Keller ,  James Stephen Speck ,  Steven P. Denbaars ,  Shuji Nakamura ,  Umesh Kumar Mishra

Inventor： Arpan Chakraborty ,  Benjamin A. Haskell ,  Stacia Keller ,  James Stephen Speck ,  Steven P. Denbaars ,  Shuji Nakamura ,  Umesh Kumar Mishra

IPC: H01L29/04

CPC classification number: H01L21/0242 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02647 ,  H01L33/0075 ,  H01L33/18 ,  Y10S438/938

Abstract: A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

Abstract translation: 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。

公开(公告)号：US5798555A

公开(公告)日：1998-08-25

申请号：US756415

申请日：1996-11-27

Applicant: Umesh Kumar Mishra ,  Steven P. DenBaars

Inventor： Umesh Kumar Mishra ,  Steven P. DenBaars

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/8256 ,  H01L27/06 ,  H01L29/51 ,  H01L29/76 ,  H01L29/94

CPC classification number: H01L29/517 ,  H01L21/02178 ,  H01L21/02241 ,  H01L21/28255 ,  H01L21/31666 ,  H01L21/8256 ,  H01L27/0605 ,  H01L29/66477

Abstract: The present invention discloses a method of forming an oxide layer on a layer of germanium including the steps of depositing a layer of aluminum arsenide on the layer of germanium, of exposing the layer of aluminum arsenide to an oxidizing gas mixture so that the aluminum arsenide is oxidized to aluminum oxide, and of controlling excess arsenic released in the aluminum oxide by the exposing step, so as to ensure enhanced electrical properties in the aluminum oxide. The method is used to provide an insulating gate layer for a Ge field effect transistor by forming an oxide layer on Ge and controlling excess arsenic so as to maintain high resistivity in the oxide layer and to avoid the formation of interface surface states which degrade transistor performance. The method is also used to provide complementary metal-insulator-semiconductor logic devices based on the germanium field effect transistor.

Abstract translation: 本发明公开了一种在锗层上形成氧化物层的方法，包括以下步骤：在锗层上沉积砷化铝层，将砷化铝层暴露于氧化气体混合物，使得砷化铝为 氧化成氧化铝，并通过曝光步骤控制在氧化铝中释放的过量的砷，以确保氧化铝中的电性能增强。 该方法用于通过在Ge上形成氧化层并控制多余的砷以提供用于Ge场效应晶体管的绝缘栅极层，以便在氧化物层中保持高电阻率并避免形成降低晶体管性能的界面表面状态 。 该方法还用于提供基于锗场效应晶体管的互补金属 - 绝缘体 - 半导体逻辑器件。

公开(公告)号：US5780922A

公开(公告)日：1998-07-14

申请号：US757281

申请日：1996-11-27

Applicant: Umesh Kumar Mishra ,  Steven P. DenBaars

Inventor： Umesh Kumar Mishra ,  Steven P. DenBaars

IPC: H01L21/28 ,  H01L21/336 ,  H01L27/06 ,  H01L29/10 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H01L29/267 ,  H01L29/12

CPC classification number: H01L29/517 ,  H01L21/28255 ,  H01L27/0605 ,  H01L29/1033 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/78684 ,  H01L29/66545

Abstract: A germanium-based field effect transistor has a passivation layer of aluminum oxide below a germanium channel and aluminum oxide gate oxide layer formed over the channel. The aluminum oxide layers are treated to reduce the density of surface state impurities, particularly arsenic released in the oxide layer as a result of forming the oxide layer. The low surface state germanium channel has very low phase noise and is suitable for use as a local oscillator in a heterodyne receiver.

Abstract translation: 基于锗的场效应晶体管具有在锗沟道下方的氧化铝钝化层和在沟道上形成的氧化铝栅极氧化物层。 处理氧化铝层以降低表面状态杂质的密度，特别是由于形成氧化物层而在氧化物层中释放的砷的密度。 低表面态锗通道具有非常低的相位噪声，并且适合用作外差接收器中的本地振荡器。