公开(公告)号：US08283682B2

公开(公告)日：2012-10-09

申请号：US13111406

申请日：2011-05-19

申请人： Yeo Jin Yoon ,  Jong Kyu Kim ,  Jun Hee Lee

发明人： Yeo Jin Yoon ,  Jong Kyu Kim ,  Jun Hee Lee

IPC分类号： H01L29/20

CPC分类号： H01L27/15 ,  H01L27/156 ,  H01L33/385 ,  H01L33/387 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer, an upper semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and are symmetric with respect to those of adjacent another of the light emitting cells.

摘要翻译： 本发明包括一个衬底和至少一个串联阵列，其具有串联连接在衬底上的多个发光单元。 每个发光单元包括下半导体层，上半导体层，插入在下半导体层和上半导体层之间的有源层，形成在暴露于基板的第一角的下半导体层上的下电极，上电极 形成在所述上半导体层上的层，以及形成在所述上电极层上的上电极焊盘，所述上电极焊盘在所述衬底的第二拐角处露出。 上电极焊盘和下电极分别设置在彼此对角相对的角上，并且相对于相邻的发光单元的对角。

公开(公告)号：US20120013260A1

公开(公告)日：2012-01-19

申请号：US13243802

申请日：2011-09-23

申请人： Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Lacroix YVES

发明人： Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Lacroix YVES

IPC分类号： H05B37/02

CPC分类号： H05B33/0821 ,  H01L24/37 ,  H01L24/40 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/371 ,  H01L2224/40137 ,  H01L2924/00014 ,  H01L2924/12041 ,  H05B33/0803 ,  H05B33/0809 ,  Y02B20/348 ,  H01L2924/00 ,  H01L2224/37099 ,  H01L2224/84

摘要： The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.

摘要翻译： 本发明涉及一种发光装置。 根据本发明的发光器件包括具有多个发光单元的发光单元块; 以及连接到所述发光单元块的输入和输出端子的桥式整流电路，其中所述桥式整流电路在节点之间包括多个二极管。 在制造其中内置有桥式整流电路的交流发光装置的情况下，本发明可以提供一种通过将桥式整流电路的二极管的尺寸设定为一个可以提高发光装置的可靠性和亮度的发光装置 一定的尺寸并控制其数量。

公开(公告)号：US20110284884A1

公开(公告)日：2011-11-24

申请号：US13146073

申请日：2010-02-12

申请人： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

发明人： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

IPC分类号： H01L33/62 ,  H01L33/50

CPC分类号： H01L27/153 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H05B33/0821 ,  H01L2924/00014

摘要： A light emitting diode (LED) chip for high voltage operation and an LED package including the same arc disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m≦n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V.

摘要翻译： 一种用于高电压操作的发光二极管（LED）芯片和包含相同电弧的LED封装。 LED芯片包括基板，形成在基板上并包括串联连接的n个发光单元的第一阵列和形成在基板上的第二阵列，并且包括串联连接的m（m和n个; n）个发光单元。 在LED芯片的操作期间，第一阵列和第二阵列通过彼此反向并联连接来操作。 此外，当第一阵列的驱动电压被定义为Vd1并且第二阵列的驱动电压被定义为Vd2时，Vd1和Vd2×（n / m）之间的差不大于2V。

公开(公告)号：US08053789B2

公开(公告)日：2011-11-08

申请号：US12518846

申请日：2007-12-12

申请人： Yeo Jin Yoon ,  Chang Yeon Kim

发明人： Yeo Jin Yoon ,  Chang Yeon Kim

IPC分类号： H01L27/15

CPC分类号： H01L33/60 ,  H01L21/28 ,  H01L21/306 ,  H01L33/0079 ,  H01L33/22

摘要： There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer.

摘要翻译： 提供了制造垂直发光二极管的方法。 该方法包括以下步骤：在牺牲衬底上生长低掺杂的第一导电半导体层; 在所述低掺杂的第一导电半导体层上形成铝层; 通过对铝层进行阳极氧化处理，形成其中形成有大量孔的AAO层; 使用具有大量孔的铝层作为荫罩来蚀刻和图案化低掺杂的第一导电半导体层，以暴露部分低掺杂的第一导电半导体层，从而形成大量的沟槽; 去除残留在低掺杂的第一导电半导体层上的铝层; 在具有大量凹槽的低掺杂第一导电半导体层上顺序地形成高掺杂的第一导电半导体层，有源层和第二导电半导体层; 在所述第二导电半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一导电半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在与所述高掺杂的第一导电半导体层欧姆接触的大量所述沟槽中。

公开(公告)号：US20110215346A1

公开(公告)日：2011-09-08

申请号：US13111406

申请日：2011-05-19

申请人： Yeo Jin YOON ,  Jong Kyu KIM ,  Jun Hee LEE

发明人： Yeo Jin YOON ,  Jong Kyu KIM ,  Jun Hee LEE

IPC分类号： H01L33/62

CPC分类号： H01L27/15 ,  H01L27/156 ,  H01L33/385 ,  H01L33/387 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells.

摘要翻译： 根据本发明的AC LED包括衬底和至少一个串联阵列，其具有在衬底上串联连接的多个发光单元。 每个发光单元包括由形成在基板顶部上的第一导电化合物半导体层构成的下半导体层，由形成于下半导体层顶部的第二导电化合物半导体层构成的上半导体层，活性层 介于下半导体层和上半导体层之间的下电极，形成在衬底的第一角上露出的下半导体层上的下电极，形成在上半导体层上的上电极层和形成在上电极层上的上电极焊盘 在基片的第二个角落。 上电极焊盘和下电极分别设置在彼此对角相对的角上，并且各发光单元被布置成使得一个发光单元的上电极焊盘和下电极相对于 相邻另一个发光单元的那些。

公开(公告)号：US20110140160A1

公开(公告)日：2011-06-16

申请号：US12963921

申请日：2010-12-09

申请人： Kyoung Wan KIM ,  Jeong Hee YANG ,  Yeo Jin YOON

发明人： Kyoung Wan KIM ,  Jeong Hee YANG ,  Yeo Jin YOON

IPC分类号： H01L33/38

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/382 ,  H01L33/44

摘要： The present invention relates to a light emitting diode including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the first conductive type semiconductor layer, and an insulation layer disposed between the first conductive type semiconductor layer and the second electrode pad, the insulation layer insulating the second electrode pad from the first conductive type semiconductor layer. At least one upper extension may be electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

摘要翻译： 本发明涉及一种发光二极管，包括基板，布置在基板上的第一导电型半导体层，布置在第一导电型半导体层上的第二导电型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第一导电类型半导体层上的第二电极焊盘以及设置在第一导电类型半导体层和第二导电类型半导体层之间的绝缘层 所述绝缘层将所述第二电极焊盘与所述第一导电型半导体层绝缘。 至少一个上延伸部可以电连接到第二电极焊盘，所述至少一个上延伸部电连接到第二导电类型半导体层。

公开(公告)号：US20110003407A1

公开(公告)日：2011-01-06

申请号：US12882449

申请日：2010-09-15

申请人： Chang Yeon Kim ,  Yeo Jin Yoon

发明人： Chang Yeon Kim ,  Yeo Jin Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/14

摘要： There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

摘要翻译： 提供了一种发光器件及其制造方法。 根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。 根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

公开(公告)号：US20100044744A1

公开(公告)日：2010-02-25

申请号：US12442267

申请日：2006-09-25

申请人： Dae Won Kim ,  Yeo Jin Yoon

发明人： Dae Won Kim ,  Yeo Jin Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： Disclosed is a light emitting diode having extensions of electrodes for improving current spreading. The light emitting diode includes a lower semiconductor layer, an upper semiconductor layer and an active layer, which are formed on a substrate. The upper semiconductor layer is located above the lower semiconductor layer such that edge regions of the lower semiconductor layer are exposed, and has indents indented in parallel with diagonal directions from positions in the edge regions adjacent to corners of the substrate in a clockwise or counterclockwise direction to expose the lower semiconductor layer. The indents have distal ends spaced apart from each other. Meanwhile, a lower electrode is formed on the exposed region of the lower semiconductor layer corresponding to the first corner of the substrate, and an upper electrode is formed on a transparent electrode layer on the semiconductor layer. Lower extensions extending from the lower electrode are formed on the exposed edge regions of the lower semiconductor layer and on the regions of the lower semiconductor layer exposed through the indents. An upper extension extending from the upper electrode are formed on the transparent electrode layer. The lower and upper extensions improve current spreading, particularly, in a light emitting diode with a large area.

摘要翻译： 公开了一种具有用于改善电流扩展的电极延伸的发光二极管。 发光二极管包括形成在基板上的下半导体层，上半导体层和有源层。 上半导体层位于下半导体层之上，使得下半导体层的边缘区域被暴露，并且具有从与基板的角部相邻的边缘区域中的顺时针或逆时针方向的位置与对角线方向平行缩进的凹口 以暴露下半导体层。 凹痕的远端彼此间隔开。 同时，在与半导体层的第一角对应的下半导体层的露出区上形成下电极，在半导体层上的透明电极层上形成上电极。 在下半导体层的暴露的边缘区域和通过凹口暴露的下半导体层的区域上形成从下电极延伸的下延伸部。 在透明电极层上形成从上部电极延伸的上延伸部。 下延伸和上延伸改善电流扩散，特别是在具有大面积的发光二极管中。

公开(公告)号：US20100012969A1

公开(公告)日：2010-01-21

申请号：US12518846

申请日：2007-12-12

申请人： Yeo Jin Yoon ,  Chang Yeon Kim

发明人： Yeo Jin Yoon ,  Chang Yeon Kim

IPC分类号： H01L33/00 ,  H01L21/302 ,  H01L21/28

CPC分类号： H01L33/60 ,  H01L21/28 ,  H01L21/306 ,  H01L33/0079 ,  H01L33/22

摘要： There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer

摘要翻译： 提供了制造垂直发光二极管的方法。 该方法包括以下步骤：在牺牲衬底上生长低掺杂的第一导电半导体层; 在所述低掺杂的第一导电半导体层上形成铝层; 通过对铝层进行阳极氧化处理，形成其中形成有大量孔的AAO层; 使用具有大量孔的铝层作为荫罩来蚀刻和图案化低掺杂的第一导电半导体层，以暴露部分低掺杂的第一导电半导体层，从而形成大量的沟槽; 去除残留在低掺杂的第一导电半导体层上的铝层; 在具有大量凹槽的低掺杂第一导电半导体层上顺序地形成高掺杂的第一导电半导体层，有源层和第二导电半导体层; 在所述第二导电半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一导电半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在所述多个沟槽中以与所述高掺杂的第一导电半导体层欧姆接触

公开(公告)号：US20090311816A1

公开(公告)日：2009-12-17

申请号：US12546155

申请日：2009-08-24

申请人： Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Jong Kyu KIM ,  Jun Hee LEE

发明人： Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Jong Kyu KIM ,  Jun Hee LEE

IPC分类号： H01L21/70 ,  H01L33/00 ,  H01L25/03

CPC分类号： H01L25/0753 ,  H01L33/007 ,  H01L33/20 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265

摘要： Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.

摘要翻译： 公开了具有光子晶体结构的AC发光器件及其制造方法。 发光器件包括多个发光单元和将发光单元彼此电连接的金属布线。 此外，每个发光单元包括第一导电类型半导体层，设置在第一导电类型半导体层的一个区域上的第二导电类型半导体层以及置于第一和第二导电类型半导体层之间的有源层。 此外，在第二导电型半导体层中形成光子晶体结构。 光子晶体结构防止从有源层发射的光通过周期性阵列横向传播，使得可以提高发光器件的光提取效率。 此外，金属配线将多个发光单元彼此电连接，从而可以提供交流发光装置。