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公开(公告)号：US20140131656A1
公开(公告)日：2014-05-15
申请号：US14014381
申请日：2013-08-30
发明人： YA-WEN LIN , CHING-HSUEH CHIU , PO-MIN TU , SHIH-CHENG HUANG
CPC分类号： H01L33/007 , B82Y40/00 , H01L21/0242 , H01L21/02444 , H01L21/02458 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/12 , Y10S977/742 , Y10S977/842 , Y10S977/95
摘要： A light emitting diode chip includes a sapphire substrate and a plurality of carbon nano-tubes arranged on an upper surface of the sapphire substrate. Gaps are formed between two adjacent carbon nano-tubes to expose parts of the upper surface of the sapphire substrate. An un-doped GaN layer is formed on the exposed parts of the upper surface of the sapphire substrate and covers the carbon nano-tubes. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the un-doped GaN layer in sequence. A method for manufacturing the light emitting diode chip is also provided.
摘要翻译： 发光二极管芯片包括蓝宝石衬底和布置在蓝宝石衬底的上表面上的多个碳纳米管。 在两个相邻的碳纳米管之间形成间隙以暴露蓝宝石衬底的上表面的部分。 在蓝宝石衬底的上表面的暴露部分上形成未掺杂的GaN层并覆盖碳纳米管。 在未掺杂的GaN层上依次形成n型GaN层，有源层和p型GaN层。 还提供了一种用于制造发光二极管芯片的方法。
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公开(公告)号：US20140065745A1
公开(公告)日：2014-03-06
申请号：US14071668
申请日：2013-11-05
发明人： CHIA-HUNG HUANG , SHIH-CHENG HUANG , PO-MIN TU , YA-WEN LIN , SHUN-KUEI YANG
摘要： A manufacturing method for an LED (light emitting diode) includes following steps: providing a substrate; disposing a transitional layer on the substrate, the transitional layer comprising a planar area with a flat top surface and a patterned area with a rugged top surface; coating an aluminum layer on the transitional layer; using a nitriding process on the aluminum layer to form an AlN material on the transitional layer; disposing an epitaxial layer on the transitional layer and covering the AlN material, the epitaxial layer contacting the planar area and the patterned area of the transitional layer, a plurality of gaps being defined between the epitaxial layer and the slugs of the second part of the AlN material in the patterned area of the transitional layer.
摘要翻译： LED（发光二极管）的制造方法包括以下步骤：提供基板; 在衬底上设置过渡层，过渡层包括具有平坦顶表面的平面区域和具有粗糙顶表面的图案区域; 在过渡层上涂覆铝层; 在铝层上使用渗氮工艺在过渡层上形成AlN材料; 在所述过渡层上设置外延层并覆盖所述AlN材料，所述外延层接触所述平坦区域和所述过渡层的图案化区域，所述外延层和所述AlN的第二部分的所述部分之间限定多个间隙 过渡层图案区域中的材料。
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公开(公告)号：US20180212105A1
公开(公告)日：2018-07-26
申请号：US15634997
申请日：2017-06-27
发明人： PO-MIN TU , CHIEN-SHIANG HUANG , CHIEN-CHUNG PENG , TZU-CHIEN HUNG , SHIH-CHENG HUANG , CHANG-HO CHEN , TSAU-HUA HSIEH , JONG-JAN LEE , PAUL-JOHN SCHUELE
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/12 , H01L33/24 , H01L33/44 , H01L2933/0016 , H01L2933/0025
摘要： A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.
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公开(公告)号：US20170373227A1
公开(公告)日：2017-12-28
申请号：US15682641
申请日：2017-08-22
发明人： CHING-HSUEH CHIU , CHIA-HUNG HUANG , YA-WEN LIN , PO-MIN TU , SHIH-CHENG HUANG
CPC分类号： H01L33/405 , H01L33/0095 , H01L33/32 , H01L33/385 , H01L33/44 , H01L2933/0016
摘要： A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.
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公开(公告)号：US20160079469A1
公开(公告)日：2016-03-17
申请号：US14736778
申请日：2015-06-11
发明人： CHING-HSUEH CHIU , YA-WEN LIN , PO-MIN TU , SHIH-CHENG HUANG
摘要： A light emitting diode (LED) chip includes a first semiconductor layer, a first light emitting layer formed on the first semiconductor layer, a second light emitting layer formed on the first light emitting layer, and a second semiconductor layer formed on the second light emitting layer. The first light emitting layer emits light having a first color. The second light emitting layer emits light having a second color different from the first color.
摘要翻译： 发光二极管（LED）芯片包括第一半导体层，形成在第一半导体层上的第一发光层，形成在第一发光层上的第二发光层和形成在第二发光层上的第二发光层 层。 第一发光层发射具有第一颜色的光。 第二发光层发射具有与第一颜色不同的第二颜色的光。
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公开(公告)号：US20160064613A1
公开(公告)日：2016-03-03
申请号：US14823129
申请日：2015-08-11
发明人： CHING-HSUEH CHIU , CHIA-HUNG HUANG , YA-WEN LIN , PO-MIN TU , SHIH-CHENG HUANG
CPC分类号： H01L33/405 , H01L33/0095 , H01L33/32 , H01L33/385 , H01L33/44 , H01L2933/0016
摘要： A light emitting diode includes a first electrode, a second electrode and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure to emit out from the top of the epitaxial structure. This disclosure also relates to a method for manufacturing the light emitting diode. The light emitting diode and the method help solve the problem of low light efficiency of the light emitting diode.
摘要翻译： 发光二极管包括第一电极，第二电极和外延结构。 外延结构布置在第一电极上，并与第一电极和第二电极电连接。 第二电极围绕外延结构的周边以反射来自外延结构的光从外延结构的顶部发出。 本公开还涉及一种用于制造发光二极管的方法。 发光二极管和该方法有助于解决发光二极管的低光效问题。
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公开(公告)号：US20160064605A1
公开(公告)日：2016-03-03
申请号：US14820268
申请日：2015-08-06
CPC分类号： H01L33/20 , H01L33/005 , H01L33/382 , H01L2933/0016
摘要： An LED die includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a transparent conductive layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, the second semiconductor layer and the transparent conductive layer are successively formed on the substrate. The first electrode and the second electrode respectively is formed on the first semiconductor layer and the transparent conductive layer. A plurality of grooves defined on the first semiconductor layer, and a plurality of hole groups defined on the second semiconductor layer. The present disclosure also provides a method of manufacturing the LED die.
摘要翻译： LED管芯包括衬底，第一半导体层，有源层，第二半导体层，透明导电层，第一电极和第二电极。 第一半导体层，有源层，第二半导体层和透明导电层依次形成在基板上。 第一电极和第二电极分别形成在第一半导体层和透明导电层上。 限定在第一半导体层上的多个沟槽和限定在第二半导体层上的多个孔组。 本公开还提供了一种制造LED管芯的方法。
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公开(公告)号：US20150311413A1
公开(公告)日：2015-10-29
申请号：US14692455
申请日：2015-04-21
发明人： CHING-HSUEH CHIU , YA-WEN LIN , PO-MIN TU , SHIH-CHENG HUANG
CPC分类号： H01L33/22 , G02B1/11 , H01L21/302 , H01L33/005 , H01L33/0079 , H01L33/44 , H01L33/58 , H01L2224/14 , H01L2224/16225
摘要： A flip-chip light emitting diode, including a substrate, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer series mounted along a height direction of the flip-chip light emitting diode. A P electrode is formed on the P-type semiconductor layer and an N electrode is formed on the N-type semiconductor. A top surface of the substrate is away from the light emitting layer. A plurality of micron main portions is formed on the top surface. An outer surface of each main body has a plurality of nanometer protrusions. A method for manufacturing the flip chip light emitting diode is also provided.
摘要翻译： 一种倒装芯片发光二极管，包括沿着倒装芯片发光二极管的高度方向安装的衬底，N型半导体层，发光层和P型半导体层。 在P型半导体层上形成P电极，在N型半导体上形成N电极。 衬底的顶表面远离发光层。 多个微米主要部分形成在顶面上。 每个主体的外表面具有多个纳米突起。 还提供了制造倒装芯片发光二极管的方法。
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公开(公告)号：US20140073077A1
公开(公告)日：2014-03-13
申请号：US13958612
申请日：2013-08-05
发明人： YA-WEN LIN , SHIH-CHENG HUANG , PO-MIN TU
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02505 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/12 , H01L33/20
摘要： A method for epitaxial growth of a light emitting diode, includes following steps: providing a substrate; forming a buffer layer on the substrate; forming a first epitaxial layer on the buffer layer in a first temperature; forming a second epitaxial layer on the first epitaxial layer in a second temperature lower than the first temperature, thereby forming a first rough surface on the second epitaxial layer; etching the second epitaxial layer and the first epitaxial layer until a second rough surface is formed on the first epitaxial layer; forming a mask layer on the rough surface of the first epitaxial layer; partly etching the mask layer to form a plurality of protrusions with the first epitaxial layer exposed thereamong; and forming an N-type epitaxial layer, an active layer and a P-type epitaxial layer on the first epitaxial layer in sequence.
摘要翻译： 一种用于外延生长发光二极管的方法包括以下步骤：提供衬底; 在衬底上形成缓冲层; 在第一温度下在缓冲层上形成第一外延层; 在低于第一温度的第二温度下在第一外延层上形成第二外延层，从而在第二外延层上形成第一粗糙表面; 蚀刻所述第二外延层和所述第一外延层，直到在所述第一外延层上形成第二粗糙表面; 在所述第一外延层的粗糙表面上形成掩模层; 部分地蚀刻掩模层以形成多个突起，其中第一外延层在其中暴露; 以及在第一外延层上依次形成N型外延层，有源层和P型外延层。
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公开(公告)号：US20140065743A1
公开(公告)日：2014-03-06
申请号：US13966652
申请日：2013-08-14
发明人： YA-WEN LIN , SHIH-CHENG HUANG , PO-MIN TU
IPC分类号： H01L33/14
CPC分类号： H01L33/145 , H01L33/0079 , H01L33/405 , H01L2933/0016
摘要： An exemplary method of manufacturing a light emitting diode (LED) die includes steps: providing a preformed LED structure, the LED structure including a first substrate, and a nucleation layer, a buffer layer, an N-type layer, a muti-quantum well layer and an P-type layer formed successively on the first substrate; forming at least one insulation block on the P-type layer; forming a mirror layer on the on the P-type layer and covering the insulation block; forming a conductive second substrate on the mirror layer; removing the first substrate, the nucleation layer and the buffer layer and exposing a bottom surface of the N-type layer; and disposing one N-electrode on the exposed surface of the N-type layer. The N-electrode is located corresponding to the insulation block.
摘要翻译： 制造发光二极管（LED）裸片的示例性方法包括以下步骤：提供预制LED结构，所述LED结构包括第一衬底和成核层，缓冲层，N型层，多量子阱 层和在所述第一基板上连续形成的P型层; 在所述P型层上形成至少一个绝缘块; 在P型层上形成镜层并覆盖绝缘块; 在所述镜层上形成导电的第二衬底; 去除第一衬底，成核层和缓冲层并暴露N型层的底表面; 并在N型层的露出面上配置一个N电极。 N电极对应于绝缘块。
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