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公开(公告)号：US20150069323A1
公开(公告)日：2015-03-12
申请号：US14480868
申请日：2014-09-09
发明人： CHING-HSUEH CHIU , YA-WEN LIN , PO-MIN TU , SHIH-CHENG HUANG
CPC分类号： H01L33/0075 , H01L33/0095 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/42 , H01L2933/0083
摘要： A single photon source die includes a first semiconductor layer, a plurality of columnar structures formed on the first semiconductor layer, a second semiconductor layer formed on the columnar structures. Each columnar structure includes a bottom layer, a single photon point layer and a connecting layer. The single photon point layer includes a plurality of single photon points.
摘要翻译： 单个光子源管芯包括第一半导体层，形成在第一半导体层上的多个柱状结构，形成在柱状结构上的第二半导体层。 每个柱状结构包括底层，单个光子点层和连接层。 单个光子点层包括多个单个光子点。
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公开(公告)号：US20140329347A1
公开(公告)日：2014-11-06
申请号：US14221241
申请日：2014-03-20
发明人： CHING-HSUEH CHIU , YA-WEN LIN , PO-MIN TU , SHIH-CHENG HUANG
CPC分类号： H01L33/10 , H01L33/007
摘要： An exemplary method for manufacturing a light emitting diode includes following steps: providing a substrate; growing an undoped GaN layer on the substrate, the undoped GaN layer comprising an upper surface away from the substrate and a lower surface contacting the substrate; etching the upper surface of the undoped GaN layer to form a plurality of cavities; growing an Distributed Bragg Reflector layer on the upper surface of the undoped GaN layer; and forming sequentially an N-type GaN layer, an active layer and a P-type GaN layer on the Distributed Bragg Reflector layer.
摘要翻译： 用于制造发光二极管的示例性方法包括以下步骤：提供衬底; 在衬底上生长未掺杂的GaN层，未掺杂的GaN层包括远离衬底的上表面和与衬底接触的下表面; 蚀刻未掺杂的GaN层的上表面以形成多个空腔; 在未掺杂的GaN层的上表面上生长分布布拉格反射器层; 并在分布式布拉格反射器层上依次形成N型GaN层，有源层和P型GaN层。
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公开(公告)号：US20140327036A1
公开(公告)日：2014-11-06
申请号：US14062830
申请日：2013-10-24
发明人： CHING-HSUEH CHIU , YA-WEN LIN , PO-MIN TU , SHIH-CHENG HUANG
CPC分类号： H01L33/02 , H01L33/007 , H01L33/06
摘要： A light emitting diode (LED) chip includes an N-type semiconductor layer, a compensation layer arranged on the N-type semiconductor layer, an active layer arranged on the compensation layer; and a P-type semiconductor layer arranged on the active layer. During growth of the compensation layer, atoms of an element (i.e., Al) of the compensation layer move to fill epitaxial defects in the N-type semiconductor layer, wherein the epitaxial defects are formed due to lattice mismatch when growing the N-type semiconductor. A method for manufacturing the chip is also disclosed. The compensation layer is made of a compound having a composition of AlxGa1-xN.
摘要翻译： 发光二极管（LED）芯片包括N型半导体层，布置在N型半导体层上的补偿层，布置在补偿层上的有源层; 以及布置在有源层上的P型半导体层。 在补偿层生长期间，补偿层的元素（即Al）的原子移动以填充N型半导体层中的外延缺陷，其中当生长N型半导体时由于晶格失配而形成外延缺陷 。 还公开了制造芯片的方法。 补偿层由具有Al x Ga 1-x N组成的化合物制成。
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公开(公告)号：US20140131656A1
公开(公告)日：2014-05-15
申请号：US14014381
申请日：2013-08-30
发明人： YA-WEN LIN , CHING-HSUEH CHIU , PO-MIN TU , SHIH-CHENG HUANG
CPC分类号： H01L33/007 , B82Y40/00 , H01L21/0242 , H01L21/02444 , H01L21/02458 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/12 , Y10S977/742 , Y10S977/842 , Y10S977/95
摘要： A light emitting diode chip includes a sapphire substrate and a plurality of carbon nano-tubes arranged on an upper surface of the sapphire substrate. Gaps are formed between two adjacent carbon nano-tubes to expose parts of the upper surface of the sapphire substrate. An un-doped GaN layer is formed on the exposed parts of the upper surface of the sapphire substrate and covers the carbon nano-tubes. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the un-doped GaN layer in sequence. A method for manufacturing the light emitting diode chip is also provided.
摘要翻译： 发光二极管芯片包括蓝宝石衬底和布置在蓝宝石衬底的上表面上的多个碳纳米管。 在两个相邻的碳纳米管之间形成间隙以暴露蓝宝石衬底的上表面的部分。 在蓝宝石衬底的上表面的暴露部分上形成未掺杂的GaN层并覆盖碳纳米管。 在未掺杂的GaN层上依次形成n型GaN层，有源层和p型GaN层。 还提供了一种用于制造发光二极管芯片的方法。
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公开(公告)号：US20170373227A1
公开(公告)日：2017-12-28
申请号：US15682641
申请日：2017-08-22
发明人： CHING-HSUEH CHIU , CHIA-HUNG HUANG , YA-WEN LIN , PO-MIN TU , SHIH-CHENG HUANG
CPC分类号： H01L33/405 , H01L33/0095 , H01L33/32 , H01L33/385 , H01L33/44 , H01L2933/0016
摘要： A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.
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公开(公告)号：US20160079469A1
公开(公告)日：2016-03-17
申请号：US14736778
申请日：2015-06-11
发明人： CHING-HSUEH CHIU , YA-WEN LIN , PO-MIN TU , SHIH-CHENG HUANG
摘要： A light emitting diode (LED) chip includes a first semiconductor layer, a first light emitting layer formed on the first semiconductor layer, a second light emitting layer formed on the first light emitting layer, and a second semiconductor layer formed on the second light emitting layer. The first light emitting layer emits light having a first color. The second light emitting layer emits light having a second color different from the first color.
摘要翻译： 发光二极管（LED）芯片包括第一半导体层，形成在第一半导体层上的第一发光层，形成在第一发光层上的第二发光层和形成在第二发光层上的第二发光层 层。 第一发光层发射具有第一颜色的光。 第二发光层发射具有与第一颜色不同的第二颜色的光。
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公开(公告)号：US20160064613A1
公开(公告)日：2016-03-03
申请号：US14823129
申请日：2015-08-11
发明人： CHING-HSUEH CHIU , CHIA-HUNG HUANG , YA-WEN LIN , PO-MIN TU , SHIH-CHENG HUANG
CPC分类号： H01L33/405 , H01L33/0095 , H01L33/32 , H01L33/385 , H01L33/44 , H01L2933/0016
摘要： A light emitting diode includes a first electrode, a second electrode and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure to emit out from the top of the epitaxial structure. This disclosure also relates to a method for manufacturing the light emitting diode. The light emitting diode and the method help solve the problem of low light efficiency of the light emitting diode.
摘要翻译： 发光二极管包括第一电极，第二电极和外延结构。 外延结构布置在第一电极上，并与第一电极和第二电极电连接。 第二电极围绕外延结构的周边以反射来自外延结构的光从外延结构的顶部发出。 本公开还涉及一种用于制造发光二极管的方法。 发光二极管和该方法有助于解决发光二极管的低光效问题。
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公开(公告)号：US20160064605A1
公开(公告)日：2016-03-03
申请号：US14820268
申请日：2015-08-06
CPC分类号： H01L33/20 , H01L33/005 , H01L33/382 , H01L2933/0016
摘要： An LED die includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a transparent conductive layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, the second semiconductor layer and the transparent conductive layer are successively formed on the substrate. The first electrode and the second electrode respectively is formed on the first semiconductor layer and the transparent conductive layer. A plurality of grooves defined on the first semiconductor layer, and a plurality of hole groups defined on the second semiconductor layer. The present disclosure also provides a method of manufacturing the LED die.
摘要翻译： LED管芯包括衬底，第一半导体层，有源层，第二半导体层，透明导电层，第一电极和第二电极。 第一半导体层，有源层，第二半导体层和透明导电层依次形成在基板上。 第一电极和第二电极分别形成在第一半导体层和透明导电层上。 限定在第一半导体层上的多个沟槽和限定在第二半导体层上的多个孔组。 本公开还提供了一种制造LED管芯的方法。
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公开(公告)号：US20150311413A1
公开(公告)日：2015-10-29
申请号：US14692455
申请日：2015-04-21
发明人： CHING-HSUEH CHIU , YA-WEN LIN , PO-MIN TU , SHIH-CHENG HUANG
CPC分类号： H01L33/22 , G02B1/11 , H01L21/302 , H01L33/005 , H01L33/0079 , H01L33/44 , H01L33/58 , H01L2224/14 , H01L2224/16225
摘要： A flip-chip light emitting diode, including a substrate, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer series mounted along a height direction of the flip-chip light emitting diode. A P electrode is formed on the P-type semiconductor layer and an N electrode is formed on the N-type semiconductor. A top surface of the substrate is away from the light emitting layer. A plurality of micron main portions is formed on the top surface. An outer surface of each main body has a plurality of nanometer protrusions. A method for manufacturing the flip chip light emitting diode is also provided.
摘要翻译： 一种倒装芯片发光二极管，包括沿着倒装芯片发光二极管的高度方向安装的衬底，N型半导体层，发光层和P型半导体层。 在P型半导体层上形成P电极，在N型半导体上形成N电极。 衬底的顶表面远离发光层。 多个微米主要部分形成在顶面上。 每个主体的外表面具有多个纳米突起。 还提供了制造倒装芯片发光二极管的方法。
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公开(公告)号：US20190140136A1
公开(公告)日：2019-05-09
申请号：US15833190
申请日：2017-12-06
发明人： PO-MIN TU , TZU-CHIEN HUNG , CHIA-HUI SHEN , CHIEN-SHIANG HUANG , CHIEN-CHUNG PENG , YA-WEN LIN , CHING-HSUEH CHIU
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/0095 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.
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