公开(公告)号：US20160240752A1

公开(公告)日：2016-08-18

申请号：US14835954

申请日：2015-08-26

申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

发明人： CHING-HSUEH CHIU ,  YA-WEN LIN ,  PO-MIN TU ,  SHIH-CHENG HUANG

IPC分类号： H01L33/54 ,  H01L33/62 ,  H01L33/50 ,  H01L33/56 ,  H01L25/075

CPC分类号： H01L33/54 ,  H01L25/0753 ,  H01L33/505 ,  H01L33/507 ,  H01L33/52 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066

摘要： The present disclosure provides a light emitting diode package including a substrate, a first electrode and a second electrode located on a first surface of the substrate, a plurality of light emitting diodes (LEDs) located between the first electrode and the second electrode, a plurality of retaining ring located on the first surface of the substrate. The LEDs are surrounded by the retaining ring therein. An encapsulation layer is mounted in the retaining ring and covers the LEDs therein. The encapsulation layer includes a first surface and an side surface extending from edges of the first surface. The side of the encapsulation layer contacts an inner surface of the retaining ring. The present disclosre also provides a method for manufacturing the above light emitting diode package.

摘要翻译： 本公开提供了一种发光二极管封装，其包括位于基板的第一表面上的基板，第一电极和第二电极，位于第一电极和第二电极之间的多个发光二极管（LED），多个 位于衬底的第一表面上的保持环。 LED由保持环包围。 封装层安装在固定环中并覆盖其中的LED。 封装层包括从第一表面的边缘延伸的第一表面和侧表面。 封装层的一侧接触保持环的内表面。 本发明还提供了制造上述发光二极管封装的方法。

公开(公告)号：US20160087151A1

公开(公告)日：2016-03-24

申请号：US14853175

申请日：2015-09-14

申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

发明人： CHING-HSUEH CHIU ,  YA-WEN LIN ,  PO-MIN TU ,  SHIH-CHENG HUANG

IPC分类号： H01L33/24 ,  H01L33/00 ,  H01L33/38 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/24 ,  H01L33/007 ,  H01L33/385

摘要： An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.

摘要翻译： LED管芯包括衬底，预生长层，第一绝缘层和发光结构。 预成长层，第一绝缘层和发光结构形成在结构上。 基板包括第一电极，第二电极和绝缘部分。 绝缘部分形成在第一电极和第二电极之间。 LED芯片还包括在预生长层周围形成的第二绝缘层和金属层。 本公开内容包括用于制造LED管芯的方法。

公开(公告)号：US20140306176A1

公开(公告)日：2014-10-16

申请号：US14083362

申请日：2013-11-18

申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

发明人： CHING-HSUEH CHIU ,  YA-WEN LIN ,  PO-MIN TU ,  SHIH-CHENG HUANG

IPC分类号： H01L33/06 ,  H01L33/60

CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/10 ,  H01L33/60

摘要： An exemplary light emitting diode includes a substrate and a first undoped gallium nitride (GaN) layer formed on the substrate. The first undoped GaN layer defines a groove in an upper surface thereof. A distributed Bragg reflector is formed in the groove of the first undoped GaN layer. The distributed Bragg reflector includes a plurality of second undoped GaN layers and a plurality of air gaps alternately stacked one on the other. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the distributed Bragg reflector and the first undoped GaN layer. A p-type electrode and an n-type electrode are electrically connected with the p-type GaN layer and the n-type GaN layer, respectively. A method for manufacturing plural such light emitting diodes is also provided.

摘要翻译： 示例性的发光二极管包括衬底和形成在衬底上的第一未掺杂的氮化镓（GaN）层。 第一未掺杂的GaN层在其上表面中限定凹槽。 分布式布拉格反射器形成在第一未掺杂GaN层的沟槽中。 分布布拉格反射器包括多个第二未掺杂GaN层和彼此交替堆叠的多个气隙。 在分布式布拉格反射体和第一未掺杂GaN层上形成n型GaN层，有源层和p型GaN层。 p型电极和n型电极分别与p型GaN层和n型GaN层电连接。 还提供了制造多个这种发光二极管的方法。

公开(公告)号：US20140291689A1

公开(公告)日：2014-10-02

申请号：US14083361

申请日：2013-11-18

申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

发明人： CHING-HSUEH CHIU ,  YA-WEN LIN ,  PO-MIN TU ,  SHIH-CHENG HUANG

IPC分类号： H01L33/46 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/10

摘要： An exemplary light emitting diode includes a substrate and a first undoped GaN layer formed on the substrate. The first undoped GaN layer has ion implanted areas on an upper surface thereof. A plurality of second undoped GaN layers is formed on the first undoped GaN layer. Each of the second undoped GaN layers is island shaped and partly covers at least one corresponding ion implanted area. A Bragg reflective layer is formed on the second undoped GaN layer and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers. An n-type GaN layer, an active layer and a p-type GaN layer are formed on an upper surface of the Bragg reflective layer in that sequence. A method for manufacturing the light emitting diode is also provided.

摘要翻译： 示例性的发光二极管包括衬底和形成在衬底上的第一未掺杂的GaN层。 第一未掺杂的GaN层在其上表面上具有离子注入区域。 在第一未掺杂GaN层上形成多个第二未掺杂的GaN层。 第二未掺杂的GaN层中的每一个是岛状的并且部分地覆盖至少一个对应的离子注入区域。 在第二未掺杂的GaN层上和在未被第二未掺杂GaN层覆盖的离子注入区域的上表面的部分上形成布拉格反射层。 按照该顺序在布拉格反射层的上表面上形成n型GaN层，有源层和p型GaN层。 还提供了一种用于制造发光二极管的方法。

公开(公告)号：US20140131727A1

公开(公告)日：2014-05-15

申请号：US14014371

申请日：2013-08-30

申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

发明人： CHING-HSUEH CHIU ,  YA-WEN LIN ,  PO-MIN TU ,  SHIH-CHENG HUANG

IPC分类号： H01L33/10 ,  H01L33/00

CPC分类号： H01L33/10 ,  H01L33/007

摘要： A method for manufacturing a light emitting diode chip includes following steps: providing a sapphire substrate, the sapphire substrate having a plurality of protrusions on an upper surface thereof; forming an un-doped GaN layer on the upper surface of the sapphire substrate, the un-doped GaN layer having an upper part covering top ends of the protrusions; forming a distributed bragg reflective layer on the un-doped GaN layer until the distributed bragg reflective layer totally covering the protrusions and the un-doped GaN layer; etching the distributed bragg reflective layer and the upper part of the un-doped GaN layer to expose the top ends of the protrusions; and forming an n-type GaN layer, an active layer, and a p-type GaN layer sequentially on the top ends of the protrusions and the distributed bragg reflective layer. An LED chip formed by the method described above is also provided.

摘要翻译： 一种制造发光二极管芯片的方法包括以下步骤：提供蓝宝石衬底，所述蓝宝石衬底在其上表面上具有多个突起; 在所述蓝宝石衬底的上表面上形成未掺杂的GaN层，所述未掺杂GaN层具有覆盖所述突起的顶端的上部; 在未掺杂的GaN层上形成分布式布拉格反射层，直到分布式布拉格反射层完全覆盖突起和未掺杂的GaN层; 蚀刻分布式布拉格反射层和未掺杂GaN层的上部以暴露突起的顶端; 并且在突起和分布式布拉格反射层的顶端依次形成n型GaN层，有源层和p型GaN层。 还提供了通过上述方法形成的LED芯片。

公开(公告)号：US20130092951A1

公开(公告)日：2013-04-18

申请号：US13693048

申请日：2012-12-04

申请人： Advanced Optoelectronic Technology, Inc.

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L29/20 ,  H01L29/16

CPC分类号： H01L29/2003 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/16

摘要： A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate.

摘要翻译： 氮化镓系半导体器件包括复合衬底和氮化镓层。 复合衬底包括硅衬底和填料。 硅衬底包括第一表面和与第一表面相对的第二表面，并且第一表面在其中限定多个凹槽。 将填料填充到硅衬底的第一表面上的槽数中。 填料的热膨胀系数大于硅衬底的热膨胀系数。 氮化镓层形成在硅衬底的第二表面上。

公开(公告)号：US20150069323A1

公开(公告)日：2015-03-12

申请号：US14480868

申请日：2014-09-09

申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

发明人： CHING-HSUEH CHIU ,  YA-WEN LIN ,  PO-MIN TU ,  SHIH-CHENG HUANG

IPC分类号： H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/04 ,  H01L33/12

CPC分类号： H01L33/0075 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0083

摘要： A single photon source die includes a first semiconductor layer, a plurality of columnar structures formed on the first semiconductor layer, a second semiconductor layer formed on the columnar structures. Each columnar structure includes a bottom layer, a single photon point layer and a connecting layer. The single photon point layer includes a plurality of single photon points.

摘要翻译： 单个光子源管芯包括第一半导体层，形成在第一半导体层上的多个柱状结构，形成在柱状结构上的第二半导体层。 每个柱状结构包括底层，单个光子点层和连接层。 单个光子点层包括多个单个光子点。

公开(公告)号：US20140329347A1

公开(公告)日：2014-11-06

申请号：US14221241

申请日：2014-03-20

申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

发明人： CHING-HSUEH CHIU ,  YA-WEN LIN ,  PO-MIN TU ,  SHIH-CHENG HUANG

IPC分类号： H01L33/10 ,  H01L33/00

CPC分类号： H01L33/10 ,  H01L33/007

摘要： An exemplary method for manufacturing a light emitting diode includes following steps: providing a substrate; growing an undoped GaN layer on the substrate, the undoped GaN layer comprising an upper surface away from the substrate and a lower surface contacting the substrate; etching the upper surface of the undoped GaN layer to form a plurality of cavities; growing an Distributed Bragg Reflector layer on the upper surface of the undoped GaN layer; and forming sequentially an N-type GaN layer, an active layer and a P-type GaN layer on the Distributed Bragg Reflector layer.

摘要翻译： 用于制造发光二极管的示例性方法包括以下步骤：提供衬底; 在衬底上生长未掺杂的GaN层，未掺杂的GaN层包括远离衬底的上表面和与衬底接触的下表面; 蚀刻未掺杂的GaN层的上表面以形成多个空腔; 在未掺杂的GaN层的上表面上生长分布布拉格反射器层; 并在分布式布拉格反射器层上依次形成N型GaN层，有源层和P型GaN层。

公开(公告)号：US20140327036A1

公开(公告)日：2014-11-06

申请号：US14062830

申请日：2013-10-24

申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

发明人： CHING-HSUEH CHIU ,  YA-WEN LIN ,  PO-MIN TU ,  SHIH-CHENG HUANG

IPC分类号： H01L33/00 ,  H01L33/32

CPC分类号： H01L33/02 ,  H01L33/007 ,  H01L33/06

摘要： A light emitting diode (LED) chip includes an N-type semiconductor layer, a compensation layer arranged on the N-type semiconductor layer, an active layer arranged on the compensation layer; and a P-type semiconductor layer arranged on the active layer. During growth of the compensation layer, atoms of an element (i.e., Al) of the compensation layer move to fill epitaxial defects in the N-type semiconductor layer, wherein the epitaxial defects are formed due to lattice mismatch when growing the N-type semiconductor. A method for manufacturing the chip is also disclosed. The compensation layer is made of a compound having a composition of AlxGa1-xN.

摘要翻译： 发光二极管（LED）芯片包括N型半导体层，布置在N型半导体层上的补偿层，布置在补偿层上的有源层; 以及布置在有源层上的P型半导体层。 在补偿层生长期间，补偿层的元素（即Al）的原子移动以填充N型半导体层中的外延缺陷，其中当生长N型半导体时由于晶格失配而形成外延缺陷 。 还公开了制造芯片的方法。 补偿层由具有Al x Ga 1-x N组成的化合物制成。

公开(公告)号：US20140175506A1

公开(公告)日：2014-06-26

申请号：US14191376

申请日：2014-02-26

申请人： ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

发明人： PO-MIN TU ,  SHIH-CHENG HUANG

IPC分类号： H01L33/02

CPC分类号： H01L33/025 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02576 ,  H01L33/007 ,  H01L33/10 ,  H01L33/12

摘要： An LED epitaxial structure includes a substrate, a buffer layer and an epitaxial layer. The buffer layer is grown on a top surface of the substrate, and the epitaxial layer is formed on a surface of the buffer layer. The epitaxial layer has a first n-type epitaxial layer and a second n-type epitaxial layer. The first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer. The first n-type epitaxial layer has a plurality of irregular holes therein. The first n-type epitaxial layer has a doping concentration which varies along a thickness direction of the first n-type epitaxial layer.

摘要翻译： LED外延结构包括衬底，缓冲层和外延层。 缓冲层在衬底的顶表面上生长，并且外延层形成在缓冲层的表面上。 外延层具有第一n型外延层和第二n型外延层。 第一n型外延层形成在缓冲层和第二n型外延层之间。 第一n型外延层在其中具有多个不规则孔。 第一n型外延层具有沿第一n型外延层的厚度方向变化的掺杂浓度。