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    MITIGATING RELIABILITY DEGRADATION OF ANALOG MEMORY CELLS DURING LONG STATIC AND ERASED STATE RETENTION
    11.
    发明申请
    MITIGATING RELIABILITY DEGRADATION OF ANALOG MEMORY CELLS DURING LONG STATIC AND ERASED STATE RETENTION 审中-公开
    在长期静态和擦除状态下，减轻模拟记忆细胞的可靠性降低

    公开(公告)号：US20160093386A1

    公开(公告)日：2016-03-31

    申请号：US14962333

    申请日：2015-12-08

    Applicant: Apple Inc.

    Inventor： Yael Shur ,  Yoav Kasorla ,  Moshe Neerman ,  Naftali Sommer ,  Avraham Poza Meir ,  Etai Zaltsman ,  Eyal Gurgi ,  Meir Dalal

    IPC: G11C16/14

    CPC classification number: G11C16/14 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/16 ,  G11C16/3418 ,  G11C16/349

    Abstract: A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

    Abstract translation: 一种非易失性存储器中的方法，其包括使用包括擦除级别的预定义编程级别集存储数据的多个存储器单元，包括接收指示要保留的一组存储器单元的存储操作，而不进行编程 长时间 组中的存储单元被设置为与擦除的电平不同的保持编程电平。 在准备使用数据对存储器单元组进行编程时，存储器单元组被擦除到擦除的电平，然后将数据编程在存储器单元组中。

    PROTECTION AND RECOVERY FROM SUDDEN POWER FAILURE IN NON-VOLATILE MEMORY DEVICES
    12.
    发明申请
    PROTECTION AND RECOVERY FROM SUDDEN POWER FAILURE IN NON-VOLATILE MEMORY DEVICES 有权
    非易失性存储器件中的电源故障的保护和恢复

    公开(公告)号：US20160011806A1

    公开(公告)日：2016-01-14

    申请号：US14523979

    申请日：2014-10-27

    Applicant: Apple Inc.

    Inventor： Etai Zaltsman ,  Avraham Poza Meir

    IPC: G06F3/06 ,  G06F11/14 ,  G11C11/56

    CPC classification number: G06F3/0619 ,  G06F3/0625 ,  G06F3/0634 ,  G06F3/0659 ,  G06F3/0688 ,  G06F11/1441 ,  G11C11/5628 ,  G11C16/22 ,  G11C16/225 ,  G11C27/005 ,  G11C2211/5641

    Abstract: A method for data storage includes, for a memory including groups of memory cells, defining a normal mode and a protected mode, wherein in the protected mode a respective analog value of each memory cell remains at all times unambiguously indicative of a respective data value stored in that memory cell. Data is initially stored in the memory using the normal mode. In response to an event, the protected mode is reverted to for at least one of the groups of the memory cells.

    Abstract translation: 一种用于数据存储的方法包括：定义正常模式和保护模式的包括存储器单元组的存储器，其中在保护模式中，每个存储单元的相应模拟值始终保持明确地指示存储的相应数据值 在那个记忆体中。 数据最初使用普通模式存储在存储器中。 响应于事件，保护模式被恢复为存储器单元的组中的至少一个。

    Hinting of deleted data from host to storage device
    13.
    发明授权
    Hinting of deleted data from host to storage device 有权
    提示从主机到存储设备的已删除数据

    公开(公告)号：US08984251B2

    公开(公告)日：2015-03-17

    申请号：US13693196

    申请日：2012-12-04

    Applicant: Apple Inc.

    Inventor： Avraham Poza Meir

    IPC: G06F12/00 ,  G06F12/02 ,  G06F12/10 ,  G06F3/06 ,  G06F17/30

    CPC classification number: G06F12/0246 ,  G06F3/061 ,  G06F3/0649 ,  G06F3/0652 ,  G06F3/0679 ,  G06F12/10 ,  G06F17/30221

    Abstract: A storage device includes a memory and a processor. The processor is configured to store data items for a host in respective logical addresses, to identify a first subset of the logical addresses as frequently-accessed logical addresses and a second subset of the logical addresses as rarely-accessed logical addresses, to manage the frequently-accessed logical addresses separately from the rarely-accessed logical addresses, to receive from the host an indication of one or more logical addresses, which are used for storing data that is identified by the host as having been deleted by a user, and to add the logical addresses indicated by the host to the rarely-accessed logical addresses.

    Abstract translation: 存储装置包括存储器和处理器。 处理器被配置为将主机的数据项存储在相应的逻辑地址中，以将逻辑地址的第一子集识别为频繁访问的逻辑地址，并将逻辑地址的第二子集识别为很少访问的逻辑地址，以便频繁地管理 - 与很少访问的逻辑地址分开的接入的逻辑地址，以从主机接收一个或多个逻辑地址的指示，用于存储由主机识别为已被用户删除的数据的一个或多个逻辑地址，并且添加 由主机指示的逻辑地址到很少访问的逻辑地址。

    PROGRAMMING SCHEMES FOR 3-D NON-VOLATILE MEMORY
    14.
    发明申请
    PROGRAMMING SCHEMES FOR 3-D NON-VOLATILE MEMORY 有权
    3-D非易失性存储器的编程方案

    公开(公告)号：US20140269051A1

    公开(公告)日：2014-09-18

    申请号：US13804427

    申请日：2013-03-14

    Applicant: APPLE INC.

    Inventor： Yoav Kasorla ,  Avraham Poza Meir ,  Eyal Gurgi

    IPC: G11C16/10

    CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/3427

    Abstract: A method includes providing data for storage in a memory, which includes multiple analog memory cells arranged in a three-dimensional (3-D) configuration having a first dimension associated with bit lines, a second dimension associated with word lines, and a third dimension associated with sections. The data is stored in the memory cells in accordance with a programming order that alternates among the sections, including storing a first portion of the data in a first section, then storing a second portion of the data in a second section different from the first section, and then storing a third portion of the data in the first section.

    Abstract translation: 一种方法包括提供用于存储在存储器中的数据，其包括以具有与位线相关联的第一维度的三维（3-D）配置布置的多个模拟存储器单元，与字线相关联的第二维度，以及第三维度 与部分相关联。 根据在这些部分之间交替的编程顺序将数据存储在存储器单元中，包括在第一部分中存储数据的第一部分，然后将数据的第二部分存储在与第一部分不同的第二部分中 ，然后将数据的第三部分存储在第一部分中。

    Mitigation of data retention drift by programming neighboring memory cells
    15.
    发明授权
    Mitigation of data retention drift by programming neighboring memory cells 有权
    通过编程相邻的存储单元减少数据保留漂移

    公开(公告)号：US09583199B2

    公开(公告)日：2017-02-28

    申请号：US15191108

    申请日：2016-06-23

    Applicant: Apple Inc.

    Inventor： Avraham Poza Meir ,  Eyal Gurgi ,  Naftali Sommer ,  Yoav Kasorla

    IPC: G11C16/10 ,  G11C16/04 ,  G11C11/56 ,  G11C16/34

    CPC classification number: G11C16/10 ,  G11C11/5671 ,  G11C16/0466 ,  G11C16/3418 ,  G11C16/3427

    Abstract: A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.

    Abstract translation: 一种方法包括在共享公共隔离层并存储在公共隔离层中的代表数据值的电荷量的多个存储器单元中，分配用于数据存储的第一组存储器单元，以及分配第二组 用于保护存储在第一组中的电荷的存储单元不保持漂移。 数据存储在第一组的存储单元中。 防止第一组的存储单元中保持漂移的电荷的保护量被存储在第二组的存储单元中。

    MITIGATION OF DATA RETENTION DRIFT BY PROGRMMING NEIGHBORING MEMORY CELLS
    16.
    发明申请
    MITIGATION OF DATA RETENTION DRIFT BY PROGRMMING NEIGHBORING MEMORY CELLS 审中-公开
    通过编程相邻存储器细胞来缓解数据保留

    公开(公告)号：US20160307631A1

    公开(公告)日：2016-10-20

    申请号：US15191108

    申请日：2016-06-23

    Applicant: Apple Inc.

    Inventor： Avraham Poza Meir ,  Eyal Gurgi ,  Naftali Sommer ,  Yoav Kasorla

    IPC: G11C16/10 ,  G11C16/04

    CPC classification number: G11C16/10 ,  G11C11/5671 ,  G11C16/0466 ,  G11C16/3418 ,  G11C16/3427

    Abstract: A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.

    Abstract translation: 一种方法包括在共享公共隔离层并存储在公共隔离层中的代表数据值的电荷量的多个存储器单元中，分配用于数据存储的第一组存储器单元，以及分配第二组 用于保护存储在第一组中的电荷的存储单元不保持漂移。 数据存储在第一组的存储单元中。 防止第一组的存储单元中保持漂移的电荷的保护量被存储在第二组的存储单元中。

    Programmable peak-current control in non-volatile memory devices
    17.
    发明授权
    Programmable peak-current control in non-volatile memory devices 有权
    非易失性存储器件中的可编程峰值电流控制

    公开(公告)号：US09368214B2

    公开(公告)日：2016-06-14

    申请号：US14322102

    申请日：2014-07-02

    Applicant: Apple Inc.

    Inventor： Yoav Kasorla ,  Avraham Poza Meir

    IPC: G11C11/34 ,  G11C16/10 ,  G11C16/04 ,  G11C16/34

    CPC classification number: G06F3/0625 ,  G06F3/0653 ,  G06F3/0673 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3422

    Abstract: A method includes, in a memory device, receiving a command that specifies a peak power consumption that is not to be exceeded by the memory device. A memory of the memory device is configured in accordance with the peak power consumption specified in the command. A data storage operation in the configured memory is performed, while complying with the specified peak power consumption.

    Abstract translation: 一种方法包括在存储器装置中接收指定存储器件不被超出的峰值功率消耗的命令。 存储器件的存储器根据命令中指定的峰值功耗进行配置。 在配置的存储器中执行数据存储操作，同时符合规定的峰值功耗。

    MITIGATION OF RETENTION DRIFT IN CHARGE-TRAP NON-VOLATILE MEMORY
    19.
    发明申请
    MITIGATION OF RETENTION DRIFT IN CHARGE-TRAP NON-VOLATILE MEMORY 有权
    电荷捕获非易失性存储器中的保持缓冲

    公开(公告)号：US20150270007A1

    公开(公告)日：2015-09-24

    申请号：US14219315

    申请日：2014-03-19

    Applicant: Apple Inc.

    Inventor： Naftali Sommer ,  Avraham Poza Meir ,  Yoav Kasorla ,  Eyal Gurgi

    IPC: G11C16/34 ,  G11C16/28

    CPC classification number: G11C16/3404 ,  G11C7/02 ,  G11C7/04

    Abstract: A method includes storing data values in a group of memory cells that share a common isolating layer, by producing quantities of electrical charge representative of the data values at respective regions of the common isolating layer that are associated with the memory cells. A function, which relates a drift of the electrical charge in a given memory cell in the group to the data values stored in one or more other memory cells in the group, is estimated. The drift is compensated for using the estimated function.

    Abstract translation: 一种方法包括通过产生表示与存储器单元相关联的公共隔离层的各个区域处的数据值的电荷量来将数据值存储在共享公共隔离层的一组存储器单元中。 估计将组中的给定存储单元中的电荷的漂移与存储在组中的一个或多个其他存储单元中的数据值相关联的功能。 使用估计功能补偿漂移。

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