SYSTEMS AND METHODS FOR INTERCONNECTING DIES

    公开(公告)号:US20210217702A1

    公开(公告)日:2021-07-15

    申请号:US17216278

    申请日:2021-03-29

    Applicant: Apple Inc.

    Abstract: Stitched die structures, and methods for interconnecting die are described. In an embodiment, a stitched die structure includes a semiconductor substrate that includes a first die first die area of a first die and a second die area of a second die separate from the first die area. A back-end-of-the-line (BEOL) build-up structure spans over the first die area and the second die area, and includes a first metallic seal directly over a first peripheral area of the first die area, a second metallic seal directly over a second peripheral area of the second die area, and a die-to-die routing extending through the first metallic seal and the second metallic seal to electrically connect the first die to the second die.

    Fully Interconnected Heterogeneous Multi-layer Reconstructed Silicon Device

    公开(公告)号:US20210125967A1

    公开(公告)日:2021-04-29

    申请号:US16869468

    申请日:2020-05-07

    Applicant: Apple Inc.

    Inventor: Jun Zhai

    Abstract: Reconstructed 3DIC structures and methods of manufacture are described. In an embodiment, one or more dies in each package level of a 3DIC are both functional chips and/or stitching devices for two or more dies in an adjacent package level. Thus, each die can function as a communication bridge between two other dies/chiplets in addition to performing a separate chip core function.

    Package with SoC and integrated memory

    公开(公告)号:US10290620B2

    公开(公告)日:2019-05-14

    申请号:US15420594

    申请日:2017-01-31

    Applicant: Apple Inc.

    Abstract: A semiconductor package includes a processor die (e.g., an SoC) and one or more memory die (e.g., DRAM) coupled to a ball grid array (BGA) substrate. The processor die and the memory die are coupled to opposite sides of the BGA substrate using terminals (e.g., solder balls). The package may be coupled to a printed circuit board (PCB) using one or more terminals positioned around the perimeter of the processor die. The PCB may include a recess with at least part of the processor die being positioned in the recess. Positioning at least part of the processor die in the recess reduces the overall height of the semiconductor package assembly. A voltage regulator may also be coupled to the BGA substrate on the same side as the processor die with at least part of the voltage regulator being positioned in the recess a few millimeters from the processor die.

    Dual-sided silicon integrated passive devices

    公开(公告)号:US10103138B2

    公开(公告)日:2018-10-16

    申请号:US15658670

    申请日:2017-07-25

    Applicant: Apple Inc.

    Abstract: In some embodiments, a system may include an integrated circuit. The integrated circuit may include a substrate including a first surface, a second surface substantially opposite of the first surface, and a first set of electrical conductors coupled to the first surface. The first set of electrical conductors may function to electrically connect the integrated circuit to a circuit board. The integrated circuit may include a semiconductor die coupled to the second surface of the substrate using a second set of electrical conductors. The integrated circuit may include a passive device dimensioned to be integrated with the integrated circuit. The passive device may be positioned between the second surface and at least one of the first set of electrical conductors. The die may be electrically connected to a second side of the passive device. A first side of the passive device may be available to be electrically connected to a second device.

Patent Agency Ranking